画像 |
部品番号 |
メーカ |
説明 |
パッケージ |
在庫 |
数量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL
|
パッケージ: DO-204AL, DO-41, Axial |
在庫7,872 |
|
1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE MODULE 600V 100A ADD-A-PAK
|
パッケージ: ADD-A-PAK (2) |
在庫2,864 |
|
600V | 100A | - | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 600V | - | Chassis Mount | ADD-A-PAK (2) | ADD-A-PAK? | - |
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TSC America Inc. |
DIODE, SUPER FAST, 20A, 200V, 35
|
パッケージ: TO-220-2 Full Pack |
在庫3,664 |
|
200V | 20A | 975mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 170pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE ULTRAFAST 15A D2PAK
|
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫3,488 |
|
600V | 15A | 1.07V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 210ns | 15µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -65°C ~ 175°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 16A,
|
パッケージ: TO-220-2 |
在庫6,480 |
|
40V | 16A | 550mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 10A,
|
パッケージ: TO-220-2 |
在庫7,264 |
|
60V | 10A | 700mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE HYPERFAST 15A 600 DPAK
|
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63 |
在庫3,712 |
|
600V | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 1A 90V POWERMITE
|
パッケージ: - |
在庫5,408 |
|
- | - | - | - | - | - | - | - | - | - | - |
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TSC America Inc. |
DIODE, 12A, 600V, AEC-Q101, DO-2
|
パッケージ: DO-214AB, SMC |
在庫3,584 |
|
600V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 1
|
パッケージ: T-18, Axial |
在庫7,632 |
|
100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 600V,
|
パッケージ: T-18, Axial |
在庫3,344 |
|
600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 250MA SOD323
|
パッケージ: SC-76, SOD-323 |
在庫6,048 |
|
200V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 1.5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C (Max) |
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Central Semiconductor Corp |
DIODE GEN PURP 1KV 1A SMA
|
パッケージ: DO-214AC, SMA |
在庫6,816 |
|
1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 1000V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 50V 1A DO214AC
|
パッケージ: DO-214AC, SMA |
在庫36,000 |
|
50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (HSMA) | -55°C ~ 150°C |
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Littelfuse Inc. |
DIODE SCHOTTKY 45V 10A TO277B
|
パッケージ: - |
Request a Quote |
|
45 V | 10A | 570 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800 µA @ 45 V | 656pF @ 5V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277B | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
3A, 400V, STANDARD RECOVERY RECT
|
パッケージ: - |
Request a Quote |
|
600 V | 3A | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 600 V | 18pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -40°C ~ 175°C |
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Diodes Incorporated |
DIODE
|
パッケージ: - |
Request a Quote |
|
75 V | 150mA | 1 V @ 10 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 5 µA @ 75 V | 4pF @ 0V, 1MHz | Surface Mount | 0805 (2012 Metric) | 0805 | -65°C ~ 175°C |
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Semtech Corporation |
DIODE SCHOTTKY 40V 3A DO201AD TR
|
パッケージ: - |
Request a Quote |
|
40 V | 3A | 525 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
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onsemi |
DIODE SIL CARB 650V 25A TO220-2
|
パッケージ: - |
在庫1,650 |
|
650 V | 25A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1085pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GP 1.2KV 50A WAFER
|
パッケージ: - |
Request a Quote |
|
1200 V | 50A | 1.97 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 60V 10A TO277A
|
パッケージ: - |
在庫11,910 |
|
60 V | 10A | 790 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 60 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO214AB
|
パッケージ: - |
Request a Quote |
|
50 V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 50 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
||
Microchip Technology |
DIODE GP 990V 1.4A SQ-MELF B
|
パッケージ: - |
Request a Quote |
|
990 V | 1.4A | 1.4 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 2 µA @ 990 V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
||
Diotec Semiconductor |
SCHOTTKY DO201 40V 12A 150C
|
パッケージ: - |
Request a Quote |
|
40 V | 12A | 550 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201 | -50°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 100V 8A DO221BC
|
パッケージ: - |
在庫100,809 |
|
100 V | 8A | 780 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 100 V | 810pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 175°C |
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Microchip Technology |
UFR,FRR
|
パッケージ: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
DIODE SCHOTTKY 1.2KV 18A ISO247
|
パッケージ: - |
Request a Quote |
|
1200 V | 18A | 1.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 1200 V | 1.5pF @ 0V, 1MHz | Through Hole | TO-247-3 | ISO247 | -40°C ~ 150°C |
||
Diodes Incorporated |
DIODE SCHOTT 40V 4A X3-TSN1608-2
|
パッケージ: - |
Request a Quote |
|
40 V | 4A | 550 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 40 V | 295pF @ 4V, 1MHz | Surface Mount | 0603 (1608 Metric) | X3-TSN1608-2 | -55°C ~ 150°C |