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部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBRH15045L	GeneSiC Semiconductor	DIODE MODULE 45V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫6,464	45V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 45V	-	Chassis Mount	D-67	D-67	-
GP10-4007EHM3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-204AL, DO-41, Axial	在庫6,272	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1000V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
GP30GE-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫5,968	400V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
ES2DHE3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-214AA, SMB	在庫15,024	200V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 200V	18pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
1N5619GPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-204AC, DO-15, Axial	在庫4,592	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 600V	25pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
FFPF04H60STU	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 4A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: TO-220-2 Full Pack	在庫4,608	600V	4A	2.1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
1N4005L-T	Diodes Incorporated	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-204AL, DO-41, Axial	在庫6,144	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
MA22D3900L	Panasonic Electronic Components	DIODE SCHOTTKY 40V 1.57A MINI2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.57A Voltage - Forward (Vf) (Max) @ If: 570mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: 50pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: Mini2-F1 Operating Temperature - Junction: 150°C (Max)	パッケージ: SOD-123F	在庫5,216,136	40V	1.57A	570mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	100µA @ 40V	50pF @ 10V, 1MHz	Surface Mount	SOD-123F	Mini2-F1	150°C (Max)
SR1030HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 10A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: TO-220-3	在庫2,352	30V	10A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 125°C
RK 19V	Sanken	DIODE SCHOTTKY 90V 1.5A AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 810mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: Axial	在庫5,520	90V	1.5A	810mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 90V	-	Through Hole	Axial	-	-40°C ~ 150°C
AM01ZWS	Sanken	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: Axial	在庫4,464	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
SF22GHA0G	TSC America Inc.	DIODE, SUPER FAST, 2A, 100V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-204AC, DO-15, Axial	在庫7,408	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N4006G	SMC Diode Solutions	DIODE GEN PURP 800V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-204AL, DO-41, Axial	在庫34,944	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
RB068MM-60TR	Rohm Semiconductor	DIODE SCHOTTKY 60V 2A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 765mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	パッケージ: SOD-123F	在庫4,960	60V	2A	765mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5µA @ 60V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
1N4148WS	Fairchild/ON Semiconductor	DIODE GEN PURP 75V 150MA SOD323F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: 150°C (Max)	パッケージ: SC-90, SOD-323F	在庫12,789,804	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	150°C (Max)
B360Q-13-F	Diodes Incorporated	DIODE SCHOTTKY 60V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100nA @ 60V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-214AB, SMC	在庫6,160	60V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100nA @ 60V	200pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
S3D20065F	SMC Diode Solutions	650V, 20A, ITO-220AC, SIC SCHOTT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 48A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 650 V Capacitance @ Vr, F: 1550pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫6	650 V	48A	1.7 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 650 V	1550pF @ 0V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 175°C
VS-15ETX06STRL-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 15A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	Request a Quote	600 V	15A	3.2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	32 ns	50 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 175°C
SD101AW-HE3_A-08	Vishay	SCHOTTKY DIODE SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1 ns Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C	パッケージ: -	Request a Quote	60 V	30mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	1 ns	200 nA @ 50 V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C
JANHCA1N4150	Microchip Technology	DIODE GEN PURP 50V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 50 V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	Request a Quote	50 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	2.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
TUAS3KH	Taiwan Semiconductor Corporation	3A, 800V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 24pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC4.6U) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫18,000	800 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	24pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC4.6U)	-55°C ~ 150°C
S1A-TP	Micro Commercial Co	DIODE GP 50V 1A DO214AA HSMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA, HSMB Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	50 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 50 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA, HSMB	-55°C ~ 150°C
SF58G-BPC01	Micro Commercial Co	RECTIFIERS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: -	Request a Quote	600 V	5A	1.75 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
US1KH	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫45,000	800 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 800 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N3972R	Solid State Inc.	DIODE GP REV 1.4KV 100A DO8 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1400 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 1400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 200°C	パッケージ: -	Request a Quote	1400 V	100A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1400 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-8	-65°C ~ 200°C
USL1J	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -50°C ~ 150°C	パッケージ: -	Request a Quote	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	1 µA @ 600 V	-	Surface Mount	SOD-123F	SOD-123FL	-50°C ~ 150°C
USL1M	Diotec Semiconductor	ULTRAFAST SOD123FL 1000V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F (SMF) Operating Temperature - Junction: -50°C ~ 150°C	パッケージ: -	在庫8,550	1000 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	1 µA @ 1000 V	-	Surface Mount	SOD-123F	SOD-123F (SMF)	-50°C ~ 150°C
SM5404	Diotec Semiconductor	DIODE MELF 400V 3A 175C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF DO-213AB Operating Temperature - Junction: -50°C ~ 175°C	パッケージ: -	Request a Quote	400 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 400 V	-	Surface Mount	DO-213AB, MELF	MELF DO-213AB	-50°C ~ 175°C

MBRH15045L

GeneSiC Semiconductor

DIODE MODULE 45V 150A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫6,464

45V

150A

600mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 45V

-

Chassis Mount

D-67

-

GP10-4007EHM3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AL, DO-41, Axial

在庫6,272

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 1000V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

GP30GE-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫5,968

400V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 400V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

ES2DHE3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AA, SMB

在庫15,024

200V

2A

900mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 200V

18pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

1N5619GPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AC, DO-15, Axial

在庫4,592

600V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

500nA @ 600V

25pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

FFPF04H60STU

Fairchild/ON Semiconductor

DIODE GEN PURP 600V 4A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-220-2 Full Pack

在庫4,608

600V

4A

2.1V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

100µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220F-2L

-65°C ~ 150°C

1N4005L-T

Diodes Incorporated

DIODE GEN PURP 600V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

在庫6,144

600V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

MA22D3900L

Panasonic Electronic Components

DIODE SCHOTTKY 40V 1.57A MINI2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1.57A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: Mini2-F1
Operating Temperature - Junction: 150°C (Max)

パッケージ: SOD-123F

在庫5,216,136

40V

1.57A

570mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

100µA @ 40V

50pF @ 10V, 1MHz

Surface Mount

SOD-123F

Mini2-F1

150°C (Max)

SR1030HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: TO-220-3

在庫2,352

30V

10A

550mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 125°C

RK 19V

Sanken

DIODE SCHOTTKY 90V 1.5A AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: Axial

在庫5,520

90V

1.5A

810mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 90V

-

Through Hole

Axial

-

-40°C ~ 150°C

AM01ZWS

Sanken

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: Axial

在庫4,464

200V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 200V

-

Through Hole

Axial

-

-40°C ~ 150°C

SF22GHA0G

TSC America Inc.

DIODE, SUPER FAST, 2A, 100V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AC, DO-15, Axial

在庫7,408

100V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 100V

40pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

1N4006G

SMC Diode Solutions

DIODE GEN PURP 800V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AL, DO-41, Axial

在庫34,944

800V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

RB068MM-60TR

Rohm Semiconductor

DIODE SCHOTTKY 60V 2A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 765mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

パッケージ: SOD-123F

在庫4,960

60V

2A

765mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5µA @ 60V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

1N4148WS

Fairchild/ON Semiconductor

DIODE GEN PURP 75V 150MA SOD323F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C (Max)

パッケージ: SC-90, SOD-323F

在庫12,789,804

75V

150mA

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323F

150°C (Max)

B360Q-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100nA @ 60V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AB, SMC

在庫6,160

60V

3A

700mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100nA @ 60V

200pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

S3D20065F

SMC Diode Solutions

650V, 20A, ITO-220AC, SIC SCHOTT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 48A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Capacitance @ Vr, F: 1550pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

在庫6

650 V

48A

1.7 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 650 V

1550pF @ 0V, 1MHz

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 175°C

VS-15ETX06STRL-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

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600 V

15A

3.2 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

32 ns

50 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 175°C

SD101AW-HE3_A-08

Vishay

SCHOTTKY DIODE SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1 ns
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C

パッケージ: -

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60 V

30mA

1 V @ 15 mA

Small Signal =< 200mA (Io), Any Speed

1 ns

200 nA @ 50 V

2pF @ 0V, 1MHz

Surface Mount

SOD-123

125°C

JANHCA1N4150

Microchip Technology

DIODE GEN PURP 50V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

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50 V

200mA

1 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

100 nA @ 50 V

2.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

TUAS3KH

Taiwan Semiconductor Corporation

3A, 800V, STANDARD RECOVERY RECT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫18,000

800 V

3A

1.1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

24pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC4.6U)

-55°C ~ 150°C

S1A-TP

Micro Commercial Co

DIODE GP 50V 1A DO214AA HSMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA, HSMB
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

Request a Quote

50 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

5 µA @ 50 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA, HSMB

-55°C ~ 150°C

SF58G-BPC01

Micro Commercial Co

RECTIFIERS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: -

Request a Quote

600 V

5A

1.75 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

US1KH

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫45,000

800 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 800 V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N3972R

Solid State Inc.

DIODE GP REV 1.4KV 100A DO8

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1400 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 1400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-8
Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: -

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1400 V

100A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 1400 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-8

-65°C ~ 200°C

USL1J

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: -

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600 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

1 µA @ 600 V

-

Surface Mount

SOD-123F

SOD-123FL

-50°C ~ 150°C

USL1M

Diotec Semiconductor

ULTRAFAST SOD123FL 1000V

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F (SMF)
Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: -

在庫8,550

1000 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

1 µA @ 1000 V

-

Surface Mount

SOD-123F

SOD-123F (SMF)

-50°C ~ 150°C

SM5404

Diotec Semiconductor

DIODE MELF 400V 3A 175C

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C

パッケージ: -

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400 V

3A

1.2 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 400 V

-

Surface Mount

DO-213AB, MELF

MELF DO-213AB

-50°C ~ 175°C