ページ 591 - ダイオード - 整流器 - シングル | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SK32E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 20V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: DO-214AB, SMC	在庫7,920	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 125°C
8AF05RPP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 50A B47 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 7mA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: B-47 Supplier Device Package: B-47 Operating Temperature - Junction: -65°C ~ 195°C	パッケージ: B-47	在庫4,608	50V	50A	-	Standard Recovery >500ns, > 200mA (Io)	-	7mA @ 50V	-	Chassis, Stud Mount	B-47	B-47	-65°C ~ 195°C
BAT54W-7	Diodes Incorporated	DIODE SCHOTTKY 30V 200MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -65°C ~ 125°C	パッケージ: SC-70, SOT-323	在庫6,096	30V	200mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-65°C ~ 125°C
VS-80APS16-M3	Vishay Semiconductor Diodes Division	DIODE FAST REC 80A TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 1600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: TO-247-3	在庫4,096	1600V	80A	1.17V @ 80A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1600V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
SF31GHB0G	TSC America Inc.	DIODE, SUPER FAST, 3A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-201AD, Axial	在庫6,224	50V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
EK 06V0	Sanken	DIODE SCHOTTKY 60V 700MA AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 620mV @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: Axial	在庫5,392	60V	700mA	620mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Through Hole	Axial	-	-40°C ~ 150°C
SK14BHM4G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: DO-214AA, SMB	在庫2,816	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
BA158GHR1G	TSC America Inc.	DIODE, FAST, 1A, 600V, 150NS, AE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-204AL, DO-41, Axial	在庫7,648	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S1JL MQG	TSC America Inc.	DIODE, 1A, 600V, SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: DO-219AB	在庫6,336	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
BAS70,235	Nexperia USA Inc.	DIODE SCHOTTKY 70V 70MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 70V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23) Operating Temperature - Junction: 150°C (Max)	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫3,360	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 70V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
SMD110PL-TP	Micro Commercial Co	DIODE SCHOTTKY 100V 1A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: SOD-123F	在庫3,968	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 125°C
PMEG2010EA,135	Nexperia USA Inc.	DIODE SCHOTTKY 20V 1A SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 15V Capacitance @ Vr, F: 25pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C (Max)	パッケージ: SC-76, SOD-323	在庫2,480	20V	1A (DC)	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 15V	25pF @ 5V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	125°C (Max)
JANTX1N3164	Microsemi Corporation	DIODE GEN PURP 200V 300A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 940A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 200°C	パッケージ: DO-205AB, DO-9, Stud	在庫6,960	200V	300A	1.55V @ 940A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 200V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 200°C
BAT86,113	Nexperia USA Inc.	DIODE SCHOTTKY 50V 200MA DO34 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 900mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 40V Capacitance @ Vr, F: 8pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34 Operating Temperature - Junction: 125°C (Max)	パッケージ: DO-204AG, DO-34, Axial	在庫2,656	50V	200mA (DC)	900mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 40V	8pF @ 1V, 1MHz	Through Hole	DO-204AG, DO-34, Axial	DO-34	125°C (Max)
SUR81620CTG	onsemi	DIODE SWITCHING 200V 16A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTX1N6620U-TR	Microchip Technology	DIODE GP 220V 1.2A A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 220 V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 500 nA @ 220 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: -	Request a Quote	220 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	500 nA @ 220 V	-	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 150°C
JANTX1N5415US-TR	Microchip Technology	UFR,FRR Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	Request a Quote	50 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 50 V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
B340CE-13-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	140pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
JANTX1N5620US-TR	Microchip Technology	DIODE GEN PURP 800V 1A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 500 nA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	Request a Quote	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 800 V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
UG12JH	Taiwan Semiconductor Corporation	20NS, 12A, 600V, ULTRA FAST RECO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫3,000	600 V	12A	2 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	5 µA @ 600 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
RFN1VWM2STR	Rohm Semiconductor	DIODE GEN PURP 200V 1A PMDE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 175°C	パッケージ: -	在庫1,920	200 V	1A	930 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 200 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	175°C
MBR2100_R2_00001	Panjit International Inc.	DIODE SCHOTTKY 100V 2A DO15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	在庫11,238	100 V	2A	800 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 175°C
M2325HA400	IXYS	DIODE GEN PURP 4KV 2325A W121 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000 V Current - Average Rectified (Io): 2325A Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 2500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.4 µs Current - Reverse Leakage @ Vr: 150 mA @ 4000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AD Supplier Device Package: W121 Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: -	Request a Quote	4000 V	2325A	2.6 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	5.4 µs	150 mA @ 4000 V	-	Chassis Mount	DO-200AD	W121	-40°C ~ 150°C
SF2006G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 20A TO220AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫3,000	400 V	20A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
PCDP1065GC_T0_00601	Panjit International Inc.	650V SIC SCHOTTKY BARRIER DIODE Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 271pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫5,883	650 V	10A	1.8 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	271pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
GS1006HE_R1_00001	Panjit International Inc.	DIODE GEN PURP 600V 1A SOD123HE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫5,790	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SR202	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO204AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: -	Request a Quote	20 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 125°C
MBR1090_T0_00001	Panjit International Inc.	DIODE SCHOTTKY 90V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	在庫3,981	90 V	10A	800 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 90 V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
S10MC_R1_00601	Panjit International Inc.	SMC PACKAGE,SURFACE MOUNT RECTIF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1 kV Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫6,750	1000 V	10A	1.1 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1 kV	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
BY500-1000	Good-Ark Semiconductor	RECTIFIER, FAST RECOVERY, 5.0A, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: -	在庫4,056	1000 V	5A	1.35 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	10 µA @ 1000 V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C

SK32E3/TR13

Microsemi Corporation

DIODE SCHOTTKY 20V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: DO-214AB, SMC

在庫7,920

20V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 125°C

8AF05RPP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 50A B47

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 7mA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: B-47
Supplier Device Package: B-47
Operating Temperature - Junction: -65°C ~ 195°C

パッケージ: B-47

在庫4,608

50V

50A

-

Standard Recovery >500ns, > 200mA (Io)

-

7mA @ 50V

-

Chassis, Stud Mount

B-47

-65°C ~ 195°C

BAT54W-7

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOT323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 125°C

パッケージ: SC-70, SOT-323

在庫6,096

30V

200mA (DC)

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323

-65°C ~ 125°C

VS-80APS16-M3

Vishay Semiconductor Diodes Division

DIODE FAST REC 80A TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: TO-247-3

在庫4,096

1600V

80A

1.17V @ 80A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 1600V

-

Through Hole

TO-247-3

TO-247AC

-40°C ~ 150°C

SF31GHB0G

TSC America Inc.

DIODE, SUPER FAST, 3A, 50V, 35NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-201AD, Axial

在庫6,224

50V

3A

950mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 50V

80pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

EK 06V0

Sanken

DIODE SCHOTTKY 60V 700MA AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 620mV @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: Axial

在庫5,392

60V

700mA

620mV @ 700mA

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

-

Through Hole

Axial

-

-40°C ~ 150°C

SK14BHM4G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: DO-214AA, SMB

在庫2,816

40V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

BA158GHR1G

TSC America Inc.

DIODE, FAST, 1A, 600V, 150NS, AE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

在庫7,648

600V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

S1JL MQG

TSC America Inc.

DIODE, 1A, 600V, SUB SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: DO-219AB

在庫6,336

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 600V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

BAS70,235

Nexperia USA Inc.

DIODE SCHOTTKY 70V 70MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 70V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Operating Temperature - Junction: 150°C (Max)

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫3,360

70V

70mA (DC)

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 70V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

150°C (Max)

SMD110PL-TP

Micro Commercial Co

DIODE SCHOTTKY 100V 1A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: SOD-123F

在庫3,968

100V

1A

850mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

30pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 125°C

PMEG2010EA,135

Nexperia USA Inc.

DIODE SCHOTTKY 20V 1A SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 15V
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)

パッケージ: SC-76, SOD-323

在庫2,480

20V

1A (DC)

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 15V

25pF @ 5V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

125°C (Max)

JANTX1N3164

Microsemi Corporation

DIODE GEN PURP 200V 300A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 940A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: DO-205AB, DO-9, Stud

在庫6,960

200V

300A

1.55V @ 940A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 200V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 200°C

BAT86,113

Nexperia USA Inc.

DIODE SCHOTTKY 50V 200MA DO34

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 40V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: DO-34
Operating Temperature - Junction: 125°C (Max)

パッケージ: DO-204AG, DO-34, Axial

在庫2,656

50V

200mA (DC)

900mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 40V

8pF @ 1V, 1MHz

Through Hole

DO-204AG, DO-34, Axial

DO-34

125°C (Max)

SUR81620CTG

onsemi

DIODE SWITCHING 200V 16A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

パッケージ: -

Request a Quote

-

JANTX1N6620U-TR

Microchip Technology

DIODE GP 220V 1.2A A SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 220 V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: -

Request a Quote

220 V

1.2A

1.4 V @ 1.2 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

500 nA @ 220 V

-

Surface Mount

SQ-MELF, A

A, SQ-MELF

-65°C ~ 150°C

JANTX1N5415US-TR

Microchip Technology

UFR,FRR

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

Request a Quote

50 V

3A

1.5 V @ 9 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

1 µA @ 50 V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 175°C

B340CE-13-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

Request a Quote

40 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 40 V

140pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

JANTX1N5620US-TR

Microchip Technology

DIODE GEN PURP 800V 1A D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

Request a Quote

800 V

1A

1.3 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

500 nA @ 800 V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

UG12JH

Taiwan Semiconductor Corporation

20NS, 12A, 600V, ULTRA FAST RECO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫3,000

600 V

12A

2 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

5 µA @ 600 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

RFN1VWM2STR

Rohm Semiconductor

DIODE GEN PURP 200V 1A PMDE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C

パッケージ: -

在庫1,920

200 V

1A

930 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 200 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

175°C

MBR2100_R2_00001

Panjit International Inc.

DIODE SCHOTTKY 100V 2A DO15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

在庫11,238

100 V

2A

800 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 100 V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 175°C

M2325HA400

IXYS

DIODE GEN PURP 4KV 2325A W121

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4000 V
Current - Average Rectified (Io): 2325A
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 2500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.4 µs
Current - Reverse Leakage @ Vr: 150 mA @ 4000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: -

Request a Quote

4000 V

2325A

2.6 V @ 2500 A

Standard Recovery >500ns, > 200mA (Io)

5.4 µs

150 mA @ 4000 V

-

Chassis Mount

DO-200AD

W121

-40°C ~ 150°C

SF2006G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 20A TO220AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫3,000

400 V

20A

1.3 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 400 V

80pF @ 4V, 1MHz

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

PCDP1065GC_T0_00601

Panjit International Inc.

650V SIC SCHOTTKY BARRIER DIODE

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Capacitance @ Vr, F: 271pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

在庫5,883

650 V

10A

1.8 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 650 V

271pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

GS1006HE_R1_00001

Panjit International Inc.

DIODE GEN PURP 600V 1A SOD123HE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫5,790

600 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 600 V

-

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

SR202

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 2A DO204AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: -

Request a Quote

20 V

2A

550 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 20 V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 125°C

MBR1090_T0_00001

Panjit International Inc.

DIODE SCHOTTKY 90V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

在庫3,981

90 V

10A

800 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 90 V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

S10MC_R1_00601

Panjit International Inc.

SMC PACKAGE,SURFACE MOUNT RECTIF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1 kV
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫6,750

1000 V

10A

1.1 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1 kV

65pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

BY500-1000

Good-Ark Semiconductor

RECTIFIER, FAST RECOVERY, 5.0A,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: -

在庫4,056

1000 V

5A

1.35 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

10 µA @ 1000 V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C