ページ 75 - ダイオード - 整流器 - シングル | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTX1N6627US	Microsemi Corporation	DIODE GEN PURP 440V 1.75A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 440V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 440V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: SQ-MELF, E	在庫6,896	440V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 440V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
CDBMH360-HF	Comchip Technology	DIODE SCHOTTKY 60V 3A SOD123T Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: SOD-123T Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: SOD-123T	在庫5,968	60V	3A (DC)	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	SOD-123T	SOD-123T	-55°C ~ 150°C
ZLLS2000TC	Diodes Incorporated	DIODE SCHOTTKY 40V 2.2A SOT23-6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2.2A (DC) Voltage - Forward (Vf) (Max) @ If: 540mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 40µA @ 30V Capacitance @ Vr, F: 65pF @ 30V, 1MHz Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6 Operating Temperature - Junction: 150°C (Max)	パッケージ: SOT-23-6	在庫4,080	40V	2.2A (DC)	540mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	6ns	40µA @ 30V	65pF @ 30V, 1MHz	Surface Mount	SOT-23-6	SOT-23-6	150°C (Max)
60HFU-300	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 60A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 50µA @ 300V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	パッケージ: DO-203AB, DO-5, Stud	在庫6,672	300V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	50µA @ 300V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
JANTX1N5622	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	パッケージ: A, Axial	在庫4,944	1000V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
FR85K05	GeneSiC Semiconductor	DIODE GEN PURP 800V 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	パッケージ: DO-203AB, DO-5, Stud	在庫5,552	800V	85A	1.4V @ 85A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
UGB5HTHE3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 500V 5A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 30µA @ 500V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫4,128	500V	5A	1.75V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	30µA @ 500V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
EP01CW	Sanken	DIODE GEN PURP 1KV 200MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: Axial	在庫4,512	1000V	200mA	4V @ 200mA	Small Signal =< 200mA (Io), Any Speed	200ns	5µA @ 1000V	-	Through Hole	Axial	-	-40°C ~ 150°C
RGL41AHE3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-213AB, MELF (Glass)	在庫6,304	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
UF1KHA0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 800V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-204AL, DO-41, Axial	在庫7,280	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4002GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-204AL, DO-41, Axial	在庫7,680	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 100V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
DA24F4100L	Panasonic Electronic Components	DIODE GEN PURP 400V 1A TMINIP2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: TMiniP2-F2-B Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: SOD-128	在庫6,656	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	10µA @ 400V	50pF @ 0V, 1MHz	Surface Mount	SOD-128	TMiniP2-F2-B	-40°C ~ 150°C
PDR5K-13	Diodes Incorporated	DIODE GEN PURP 750V 5A POWERDI5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 750V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 990mV @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 10µA @ 750V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -65°C ~ 155°C	パッケージ: PowerDI? 5	在庫82,068	750V	5A	990mV @ 5A	Standard Recovery >500ns, > 200mA (Io)	3µs	10µA @ 750V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-65°C ~ 155°C
VS-1N1183A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 40A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 126A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.5mA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 200°C	パッケージ: DO-203AB, DO-5, Stud	在庫25,860	50V	40A	1.3V @ 126A	Standard Recovery >500ns, > 200mA (Io)	-	2.5mA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 200°C
VS-6TQ045SPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 6A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫50,718	45V	6A	600mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
1N6664	Microchip Technology	DIODE GEN PURP 100V 10A TO257 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: 200°C	パッケージ: -	Request a Quote	100 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	-	-	Through Hole	TO-257-3	TO-257	200°C
R43150	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
UFR7140R	Microchip Technology	DIODE GEN PURP 400V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 70 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 150pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: 175°C (Max)	パッケージ: -	Request a Quote	400 V	70A	1.25 V @ 70 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	-	150pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	175°C (Max)
F11K120	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 11A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 11 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350 ns Current - Reverse Leakage @ Vr: 5 µA @ 120 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -50°C ~ 175°C	パッケージ: -	Request a Quote	120 V	11A	1.1 V @ 11 A	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	5 µA @ 120 V	-	Through Hole	Axial	Axial	-50°C ~ 175°C
LR7135-TR	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SX1H15_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 150V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫5,061	150 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 nA @ 150 V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 175°C
EGF1D-2HE3_B-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	Request a Quote	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	15pF @ 4V, 1MHz	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
PMEG4010BEA-QX	Nexperia USA Inc.	PMEG4010BEA-Q/SOD323/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 43pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C	パッケージ: -	在庫6,183	40 V	1A	640 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	43pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C
BAS316-EVL-CT	Venkel	Rectifier,SOD-323,100V,250mA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 500 nA @ 100 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	100 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	500 nA @ 100 V	1.5pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	-	-55°C ~ 150°C
BD5200S_S2_00001	Panjit International Inc.	DIODE SCHOTTKY 200V 5A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	在庫9,000	200 V	5A	900 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 200 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-65°C ~ 175°C
RS3K-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	800 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	10 µA @ 800 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
240NQ045R-1	SMC Diode Solutions	DIODE SCHOTTKY 45V 240A PRM1-1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 610 mV @ 240 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 45 V Capacitance @ Vr, F: 8000pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: PRM1-1 (Half Pak Module) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫81	45 V	240A	610 mV @ 240 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 45 V	8000pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 150°C
1N4371-TR	Microchip Technology	DIODE DO35 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 1 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -	パッケージ: -	Request a Quote	-	-	1.1 V @ 200 mA	-	-	75 µA @ 1 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-

JANTX1N6627US

Microsemi Corporation

DIODE GEN PURP 440V 1.75A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 440V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 440V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: SQ-MELF, E

在庫6,896

440V

1.75A

1.35V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 440V

40pF @ 10V, 1MHz

Surface Mount

SQ-MELF, E

D-5B

-65°C ~ 150°C

CDBMH360-HF

Comchip Technology

DIODE SCHOTTKY 60V 3A SOD123T

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123T
Supplier Device Package: SOD-123T
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: SOD-123T

在庫5,968

60V

3A (DC)

700mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 60V

-

Surface Mount

SOD-123T

-55°C ~ 150°C

ZLLS2000TC

Diodes Incorporated

DIODE SCHOTTKY 40V 2.2A SOT23-6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2.2A (DC)
Voltage - Forward (Vf) (Max) @ If: 540mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 40µA @ 30V
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
Operating Temperature - Junction: 150°C (Max)

パッケージ: SOT-23-6

在庫4,080

40V

2.2A (DC)

540mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

6ns

40µA @ 30V

65pF @ 30V, 1MHz

Surface Mount

SOT-23-6

150°C (Max)

60HFU-300

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 60A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 50µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C

パッケージ: DO-203AB, DO-5, Stud

在庫6,672

300V

60A

1.3V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

80ns

50µA @ 300V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 125°C

JANTX1N5622

Microsemi Corporation

DIODE GEN PURP 1KV 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: A, Axial

在庫4,944

1000V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 1000V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

FR85K05

GeneSiC Semiconductor

DIODE GEN PURP 800V 85A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

パッケージ: DO-203AB, DO-5, Stud

在庫5,552

800V

85A

1.4V @ 85A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

25µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 125°C

UGB5HTHE3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 5A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 30µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫4,128

500V

5A

1.75V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

30µA @ 500V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

EP01CW

Sanken

DIODE GEN PURP 1KV 200MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: Axial

在庫4,512

1000V

200mA

4V @ 200mA

Small Signal =< 200mA (Io), Any Speed

200ns

5µA @ 1000V

-

Through Hole

Axial

-

-40°C ~ 150°C

RGL41AHE3/97

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-213AB, MELF (Glass)

在庫6,304

50V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

UF1KHA0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 800V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

在庫7,280

800V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 800V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

1N4002GP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AL, DO-41, Axial

在庫7,680

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 100V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

DA24F4100L

Panasonic Electronic Components

DIODE GEN PURP 400V 1A TMINIP2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: TMiniP2-F2-B
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: SOD-128

在庫6,656

400V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

10µA @ 400V

50pF @ 0V, 1MHz

Surface Mount

SOD-128

TMiniP2-F2-B

-40°C ~ 150°C

PDR5K-13

Diodes Incorporated

DIODE GEN PURP 750V 5A POWERDI5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 750V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 990mV @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 10µA @ 750V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -65°C ~ 155°C

パッケージ: PowerDI? 5

在庫82,068

750V

5A

990mV @ 5A

Standard Recovery >500ns, > 200mA (Io)

3µs

10µA @ 750V

-

Surface Mount

PowerDI? 5

-65°C ~ 155°C

VS-1N1183A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 40A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 126A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.5mA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: DO-203AB, DO-5, Stud

在庫25,860

50V

40A

1.3V @ 126A

Standard Recovery >500ns, > 200mA (Io)

-

2.5mA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 200°C

VS-6TQ045SPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 6A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫50,718

45V

6A

600mV @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

1N6664

Microchip Technology

DIODE GEN PURP 100V 10A TO257

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: 200°C

パッケージ: -

Request a Quote

100 V

10A

1 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

-

Through Hole

TO-257-3

TO-257

200°C

R43150

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

パッケージ: -

Request a Quote

-

UFR7140R

Microchip Technology

DIODE GEN PURP 400V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 70 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: 175°C (Max)

パッケージ: -

Request a Quote

400 V

70A

1.25 V @ 70 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

-

150pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

175°C (Max)

F11K120

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 120 V
Current - Average Rectified (Io): 11A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 11 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Current - Reverse Leakage @ Vr: 5 µA @ 120 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 175°C

パッケージ: -

Request a Quote

120 V

11A

1.1 V @ 11 A

Fast Recovery =< 500ns, > 200mA (Io)

350 ns

5 µA @ 120 V

-

Through Hole

Axial

-50°C ~ 175°C

LR7135-TR

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

パッケージ: -

Request a Quote

-

SX1H15_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 150V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

在庫5,061

150 V

1A

850 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 nA @ 150 V

-

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 175°C

EGF1D-2HE3_B-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO214BA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

Request a Quote

200 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

15pF @ 4V, 1MHz

Surface Mount

DO-214BA

DO-214BA (GF1)

-65°C ~ 175°C

PMEG4010BEA-QX

Nexperia USA Inc.

PMEG4010BEA-Q/SOD323/SOD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 43pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C

パッケージ: -

在庫6,183

40 V

1A

640 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

43pF @ 1V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C

BAS316-EVL-CT

Venkel

Rectifier,SOD-323,100V,250mA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

Request a Quote

100 V

250mA

1.25 V @ 150 mA

Fast Recovery =< 500ns, > 200mA (Io)

4 ns

500 nA @ 100 V

1.5pF @ 0V, 1MHz

Surface Mount

SC-90, SOD-323F

-

-55°C ~ 150°C

BD5200S_S2_00001

Panjit International Inc.

DIODE SCHOTTKY 200V 5A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

在庫9,000

200 V

5A

900 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 200 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

-65°C ~ 175°C

RS3K-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

Request a Quote

800 V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

10 µA @ 800 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

240NQ045R-1

SMC Diode Solutions

DIODE SCHOTTKY 45V 240A PRM1-1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 240 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 45 V
Capacitance @ Vr, F: 8000pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: PRM1-1 (Half Pak Module)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫81

45 V

240A

610 mV @ 240 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 mA @ 45 V

8000pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

PRM1-1 (Half Pak Module)

-55°C ~ 150°C

1N4371-TR

Microchip Technology

DIODE DO35

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -

パッケージ: -

Request a Quote

-

1.1 V @ 200 mA

-

75 µA @ 1 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-