ページ 843 - ダイオード - 整流器 - シングル | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SB5100-B	Diodes Incorporated	DIODE SCHOTTKY 100V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 400pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-201AD, Axial	在庫7,648	100V	5A	800mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	400pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
242NQ030R	Vishay Semiconductor Diodes Division	DIODE MODULE 30V 240A HALF-PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 510mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 30V Capacitance @ Vr, F: 14800pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	パッケージ: D-67 HALF-PAK	在庫4,736	30V	240A	510mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	20mA @ 30V	14800pF @ 5V, 1MHz	Chassis Mount	D-67 HALF-PAK	HALF-PAK	-
R9G03612XX	Powerex Inc.	DIODE MODULE 3.6KV 1200A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3600V Current - Average Rectified (Io): 1200A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 150mA @ 3600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	パッケージ: DO-200AA, A-PUK	在庫6,560	3600V	1200A	1.45V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	25µs	150mA @ 3600V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
VS-60EPF04PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 60A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180ns Current - Reverse Leakage @ Vr: 100µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: TO-247-2	在庫6,784	400V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 400V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
VS-APU3006L-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-247-3	在庫4,880	600V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	30µA @ 600V	-	Through Hole	TO-247-3	TO-247-3	-65°C ~ 175°C
SBRT20M60SP5-13D	Diodes Incorporated	DIODE SBR 60V 20A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 180µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: PowerDI? 5	在庫6,016	60V	20A	570mV @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	180µA @ 60V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
BYM10-1000/1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-213AB, MELF (Glass)	在庫3,376	1000V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
ES1DRX	Nexperia USA Inc.	DIODE GEN PURP 200V 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 200nA @ 200V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: SOD-123W	在庫7,440	200V	1A	930mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	200nA @ 200V	17pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
RSFML RTG	TSC America Inc.	DIODE, FAST, 0.5A, 1000V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-219AB	在庫6,560	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1N5397GHB0G	TSC America Inc.	DIODE, 1.5A, 600V, AEC-Q101, DO- Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-204AC, DO-15, Axial	在庫7,744	600V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
BAT42WS-E3-18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 200MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C (Max)	パッケージ: SC-76, SOD-323	在庫3,584	30V	200mA (DC)	650mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	7pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	125°C (Max)
ESH2PD-M3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: DO-220AA	在庫606,480	200V	2A	980mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
CS2J-E3/I	Vishay Semiconductor Diodes Division	DIODE GPP 2A 600V DO-214AA SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.1µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-214AA, SMB	在庫4,704	600V	1.6A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	2.1µs	5µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
FESB16JT-E3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 145pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫16,164	600V	16A	1.5V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	145pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
SK310-TP	Micro Commercial Co	DIODE SCHOTTKY 3A 100V SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-214AB, SMC	在庫6,128	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	250pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
CES521,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA ESC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 30V Capacitance @ Vr, F: 26pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max)	パッケージ: SC-79, SOD-523	在庫6,176	30V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	30µA @ 30V	26pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	125°C (Max)
MA27E0200L	Panasonic Electronic Components	DIODE SCHOTTKY 20V 35MA SSSMINI2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 35mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 35mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 15V Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: SSSMini2-F2 Operating Temperature - Junction: 125°C (Max)	パッケージ: 2-SMD, Flat Lead	在庫105,912	20V	35mA (DC)	1V @ 35mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 15V	1.2pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	SSSMini2-F2	125°C (Max)
RFN20NS3SFHTL	Rohm Semiconductor	DIODE GEN PURP 350V 20A LPDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 350 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 350 V Capacitance @ Vr, F: 412pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max)	パッケージ: -	在庫921	350 V	20A	1.35 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 350 V	412pF @ 0V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	LPDS	150°C (Max)
PCDP1265G1_T0_00001	Panjit International Inc.	DIODE SIL CARB 650V 12A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 80 µA @ 650 V Capacitance @ Vr, F: 452pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫6,000	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	452pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
DMA10IM1600UZ-TUB	IXYS	DIODE GEN PURP 1.6KV 10A TO252AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1600 V Capacitance @ Vr, F: 4pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫420	1600 V	10A	1.26 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1600 V	4pF @ 400V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
V2PM6LHM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 60 V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -40°C ~ 175°C	パッケージ: -	在庫2,907	60 V	2A	630 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	250pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-40°C ~ 175°C
SMS190	Diotec Semiconductor	DIODE SCHOTT 90V 1A MELF DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF DO-213AB (Plastic) Operating Temperature - Junction: -50°C ~ 150°C	パッケージ: -	在庫5,034	90 V	1A	790 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 90 V	-	Surface Mount	DO-213AB, MELF	MELF DO-213AB (Plastic)	-50°C ~ 150°C
TSS0340L	Taiwan Semiconductor Corporation	1005, 45V, 0.03A, SCHOTTKY DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 40 V Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005 Operating Temperature - Junction: -40°C ~ 125°C	パッケージ: -	Request a Quote	45 V	30mA	370 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	1 µA @ 40 V	1.5pF @ 1V, 1MHz	Surface Mount	1005 (2512 Metric)	1005	-40°C ~ 125°C
30FQ045	Microchip Technology	DIODE SCHOTTKY 45V 30A DO4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	Request a Quote	45 V	30A	630 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 45 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-55°C ~ 175°C
US1JHM3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SFAF1604G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 16A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫2,994	200 V	16A	975 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	130pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SF12M-TP	Micro Commercial Co	DIODE GEN PURP 100V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (HSMA) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: -	Request a Quote	100 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 100 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (HSMA)	-65°C ~ 150°C
AS5DBF-HF	Comchip Technology	DIODE GEN PURP 200V 5A SMBF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	200 V	5A	1.15 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C
SK115B	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	150 V	1A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 150 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
JANTXV1N5816R	Microchip Technology	DIODE GEN PURP 150V 20A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: 300pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	Request a Quote	150 V	20A	950 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 150 V	300pF @ 10V, 1MHz	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C

SB5100-B

Diodes Incorporated

DIODE SCHOTTKY 100V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-201AD, Axial

在庫7,648

100V

5A

800mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

400pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

242NQ030R

Vishay Semiconductor Diodes Division

DIODE MODULE 30V 240A HALF-PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 30V
Capacitance @ Vr, F: 14800pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

パッケージ: D-67 HALF-PAK

在庫4,736

30V

240A

510mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

20mA @ 30V

14800pF @ 5V, 1MHz

Chassis Mount

D-67 HALF-PAK

HALF-PAK

-

R9G03612XX

Powerex Inc.

DIODE MODULE 3.6KV 1200A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3600V
Current - Average Rectified (Io): 1200A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25µs
Current - Reverse Leakage @ Vr: 150mA @ 3600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -

パッケージ: DO-200AA, A-PUK

在庫6,560

3600V

1200A

1.45V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

25µs

150mA @ 3600V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, R62

-

VS-60EPF04PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 60A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 100µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: TO-247-2

在庫6,784

400V

60A

1.3V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

180ns

100µA @ 400V

-

Through Hole

TO-247-2

TO-247AC Modified

-40°C ~ 150°C

VS-APU3006L-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO247-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-247-3

在庫4,880

600V

30A

2V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

30µA @ 600V

-

Through Hole

TO-247-3

-65°C ~ 175°C

SBRT20M60SP5-13D

Diodes Incorporated

DIODE SBR 60V 20A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 180µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: PowerDI? 5

在庫6,016

60V

20A

570mV @ 20A

Standard Recovery >500ns, > 200mA (Io)

-

180µA @ 60V

-

Surface Mount

PowerDI? 5

PowerDI?5

-55°C ~ 150°C

BYM10-1000/1

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-213AB, MELF (Glass)

在庫3,376

1000V

1A

1.2V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1000V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

ES1DRX

Nexperia USA Inc.

DIODE GEN PURP 200V 1A SOD123W

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 200nA @ 200V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD123W
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: SOD-123W

在庫7,440

200V

1A

930mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

200nA @ 200V

17pF @ 4V, 1MHz

Surface Mount

SOD-123W

SOD123W

-55°C ~ 150°C

RSFML RTG

TSC America Inc.

DIODE, FAST, 0.5A, 1000V, 500NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-219AB

在庫6,560

-

500mA

1.3V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

1N5397GHB0G

TSC America Inc.

DIODE, 1.5A, 600V, AEC-Q101, DO-

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AC, DO-15, Axial

在庫7,744

600V

1.5A

1V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

BAT42WS-E3-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)

パッケージ: SC-76, SOD-323

在庫3,584

30V

200mA (DC)

650mV @ 50mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 25V

7pF @ 1V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

125°C (Max)

ESH2PD-M3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: DO-220AA

在庫606,480

200V

2A

980mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 200V

25pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

CS2J-E3/I

Vishay Semiconductor Diodes Division

DIODE GPP 2A 600V DO-214AA SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.1µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AA, SMB

在庫4,704

600V

1.6A

1.15V @ 2A

Standard Recovery >500ns, > 200mA (Io)

2.1µs

5µA @ 600V

12pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

FESB16JT-E3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 16A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫16,164

600V

16A

1.5V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 600V

145pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

SK310-TP

Micro Commercial Co

DIODE SCHOTTKY 3A 100V SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AB, SMC

在庫6,128

100V

3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

250pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

CES521,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA ESC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 30V
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)

パッケージ: SC-79, SOD-523

在庫6,176

30V

200mA

500mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

30µA @ 30V

26pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

ESC

125°C (Max)

MA27E0200L

Panasonic Electronic Components

DIODE SCHOTTKY 20V 35MA SSSMINI2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 35mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 35mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200nA @ 15V
Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: SSSMini2-F2
Operating Temperature - Junction: 125°C (Max)

パッケージ: 2-SMD, Flat Lead

在庫105,912

20V

35mA (DC)

1V @ 35mA

Small Signal =< 200mA (Io), Any Speed

-

200nA @ 15V

1.2pF @ 0V, 1MHz

Surface Mount

2-SMD, Flat Lead

SSSMini2-F2

125°C (Max)

RFN20NS3SFHTL

Rohm Semiconductor

DIODE GEN PURP 350V 20A LPDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 350 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Capacitance @ Vr, F: 412pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)

パッケージ: -

在庫921

350 V

20A

1.35 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 350 V

412pF @ 0V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

LPDS

150°C (Max)

PCDP1265G1_T0_00001

Panjit International Inc.

DIODE SIL CARB 650V 12A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Capacitance @ Vr, F: 452pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

在庫6,000

650 V

12A

1.7 V @ 12 A

No Recovery Time > 500mA (Io)

0 ns

80 µA @ 650 V

452pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

DMA10IM1600UZ-TUB

IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

在庫420

1600 V

10A

1.26 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1600 V

4pF @ 400V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

V2PM6LHM3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 2A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C

パッケージ: -

在庫2,907

60 V

2A

630 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 60 V

250pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-40°C ~ 175°C

SMS190

Diotec Semiconductor

DIODE SCHOTT 90V 1A MELF DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF DO-213AB (Plastic)
Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: -

在庫5,034

90 V

1A

790 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 90 V

-

Surface Mount

DO-213AB, MELF

MELF DO-213AB (Plastic)

-50°C ~ 150°C

TSS0340L

Taiwan Semiconductor Corporation

1005, 45V, 0.03A, SCHOTTKY DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 40 V
Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005
Operating Temperature - Junction: -40°C ~ 125°C

パッケージ: -

Request a Quote

45 V

30mA

370 mV @ 1 mA

Small Signal =< 200mA (Io), Any Speed

-

1 µA @ 40 V

1.5pF @ 1V, 1MHz

Surface Mount

1005 (2512 Metric)

1005

-40°C ~ 125°C

30FQ045

Microchip Technology

DIODE SCHOTTKY 45V 30A DO4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -55°C ~ 175°C

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45 V

30A

630 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5 mA @ 45 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-55°C ~ 175°C

US1JHM3_A-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

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600 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 600 V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SFAF1604G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 16A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

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在庫2,994

200 V

16A

975 mV @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

130pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

SF12M-TP

Micro Commercial Co

DIODE GEN PURP 100V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -65°C ~ 150°C

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100 V

1A

-

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 100 V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (HSMA)

-65°C ~ 150°C

AS5DBF-HF

Comchip Technology

DIODE GEN PURP 200V 5A SMBF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C

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200 V

5A

1.15 V @ 5 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Surface Mount

DO-221AA, SMB Flat Leads

SMBF

-55°C ~ 150°C

SK115B

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 1A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

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150 V

1A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 150 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

JANTXV1N5816R

Microchip Technology

DIODE GEN PURP 150V 20A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

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150 V

20A

950 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 150 V

300pF @ 10V, 1MHz

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C