ページ 852 - ダイオード - 整流器 - シングル | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CLLRH-06 TR	Central Semiconductor Corp	DIODE GP 600V 500MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 500mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-213AC, MINI-MELF, SOD-80	在庫3,840	400V	500mA	1.1V @ 500mA	Standard Recovery >500ns, > 200mA (Io)	-	-	10pF @ 4V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80	-65°C ~ 175°C
GP10Y-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1600V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-204AL, DO-41, Axial	在庫4,368	1600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1600V	5pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
EGP10DEHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 22pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-204AL, DO-41, Axial	在庫7,968	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	22pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
B0530W-7	Diodes Incorporated	DIODE SCHOTTKY 30V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 130µA @ 30V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C	パッケージ: SOD-123	在庫1,319,616	30V	500mA	430mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	130µA @ 30V	170pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
RBK86025XX	Powerex Inc.	DIODE MODULE 6KV 3200A DISC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 6000V Current - Average Rectified (Io): 3200A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 3000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 150mA @ 6000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	パッケージ: -	在庫3,504	6000V	3200A	1.55V @ 3000A	Standard Recovery >500ns, > 200mA (Io)	25µs	150mA @ 6000V	-	Surface Mount	-	-	-
SR520 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 5A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-201AD, Axial	在庫2,768	200V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
GP10-4004-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-204AL, DO-41, Axial	在庫2,816	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 400V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SA2B-E3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 3µA @ 100V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-214AC, SMA	在庫2,368	100V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	3µA @ 100V	11pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
TSP10H200S S1G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 10A, 20 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 910mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-277, 3-PowerDFN	在庫7,776	200V	10A	910mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
1N5408-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	パッケージ: DO-201AD, Axial	在庫6,832	1000V	3A	1.2V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
STB15150TR	SMC Diode Solutions	DIODE SCHOTTKY 150V D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.36V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫7,904	150V	-	1.36V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 150V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
SM4006PL-TP	Micro Commercial Co	DIODE GEN PURP 800V 1A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: SOD-123F	在庫150,000	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 175°C
NSR10404NXT5G	onsemi	DIODE SCHOTTKY 40V 1A 2DSN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 40 µA @ 40 V Capacitance @ Vr, F: 50pF @ 2V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: 2-DSN (1x0.6), (0402) Operating Temperature - Junction: 150°C	パッケージ: -	Request a Quote	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	40 µA @ 40 V	50pF @ 2V, 1MHz	Surface Mount	0402 (1006 Metric)	2-DSN (1x0.6), (0402)	150°C
SV560L_R2_00001	Panjit International Inc.	DIODE SCHOTTKY 60V 5A TO277 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 670 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫9,300	60 V	5A	670 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 60 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277	-55°C ~ 150°C
BYWB29-150HE3_A-P	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 150V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: -	Request a Quote	150 V	8A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 150 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 150°C
S53120	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N4937-AP	Micro Commercial Co	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 600 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
SE8D20D-M3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 2A SLIMSMAW Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫42,000	200 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	5 µA @ 200 V	12pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SlimSMAW (DO-221AD)	-55°C ~ 175°C
US1M-EVL-CT	Venkel	Rectifier,SMA,1000V,1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	1000 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 1000 V	-	Surface Mount	DO-214AC, SMA	-	-55°C ~ 150°C
LSR104-L0	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A MELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 125°C	パッケージ: -	Request a Quote	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 125°C
SMBT1583LT3G	onsemi	SS SOT23 DR XSTR SPCL TR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
HER108-AP	Micro Commercial Co	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: -	Request a Quote	1000 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 125°C
CD6761	Microchip Technology	DIODE SCHOTTKY 100V 1A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: -	Request a Quote	100 V	1A	750 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Surface Mount	Die	Die	-55°C ~ 125°C
SDURD1540	SMC Diode Solutions	DIODE GEN PURP 400V 15A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	400 V	15A	1.25 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	10 µA @ 400 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
BAS321J-QF	Nexperia USA Inc.	BAS321J-Q/SOD323F/SOD323F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: 150°C	パッケージ: -	Request a Quote	200 V	250mA	1.25 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 200 V	2pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	150°C
MBR10150H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	150 V	10A	1.05 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 150 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
VS-18TQ035STRLHM3	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 35V 18A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35 V Current - Average Rectified (Io): 18A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	Request a Quote	35 V	18A	600 mV @ 18 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.5 mA @ 35 V	1400pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 175°C
HS3MH	Taiwan Semiconductor Corporation	75NS, 3A, 1000V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫9,000	1000 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 1000 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
B250A-13-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: 200pF @ 40V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: -	Request a Quote	50 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	200pF @ 40V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
JANTXV1N3293R	Microchip Technology	DIODE GEN PURP 600V 100A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	パッケージ: -	Request a Quote	600 V	100A	1.55 V @ 310 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 600 V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C

CLLRH-06 TR

Central Semiconductor Corp

DIODE GP 600V 500MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 500mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-213AC, MINI-MELF, SOD-80

在庫3,840

400V

500mA

1.1V @ 500mA

Standard Recovery >500ns, > 200mA (Io)

-

10pF @ 4V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80

-65°C ~ 175°C

GP10Y-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 1600V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

在庫4,368

1600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 1600V

5pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

EGP10DEHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

在庫7,968

200V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

22pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

B0530W-7

Diodes Incorporated

DIODE SCHOTTKY 30V 500MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 130µA @ 30V
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C

パッケージ: SOD-123

在庫1,319,616

30V

500mA

430mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

130µA @ 30V

170pF @ 0V, 1MHz

Surface Mount

SOD-123

-65°C ~ 125°C

RBK86025XX

Powerex Inc.

DIODE MODULE 6KV 3200A DISC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 6000V
Current - Average Rectified (Io): 3200A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 3000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25µs
Current - Reverse Leakage @ Vr: 150mA @ 6000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

パッケージ: -

在庫3,504

6000V

3200A

1.55V @ 3000A

Standard Recovery >500ns, > 200mA (Io)

25µs

150mA @ 6000V

-

Surface Mount

-

SR520 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-201AD, Axial

在庫2,768

200V

5A

1.05V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 200V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

GP10-4004-E3/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AL, DO-41, Axial

在庫2,816

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 400V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

SA2B-E3/5AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 3µA @ 100V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AC, SMA

在庫2,368

100V

2A

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

3µA @ 100V

11pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

TSP10H200S S1G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 10A, 20

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 910mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-277, 3-PowerDFN

在庫7,776

200V

10A

910mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 200V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

1N5408-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: DO-201AD, Axial

在庫6,832

1000V

3A

1.2V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 150°C

STB15150TR

SMC Diode Solutions

DIODE SCHOTTKY 150V D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1.36V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫7,904

150V

-

1.36V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 150V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

SM4006PL-TP

Micro Commercial Co

DIODE GEN PURP 800V 1A SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: SOD-123F

在庫150,000

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

15pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-65°C ~ 175°C

NSR10404NXT5G

onsemi

DIODE SCHOTTKY 40V 1A 2DSN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Capacitance @ Vr, F: 50pF @ 2V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: 150°C

パッケージ: -

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40 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

40 µA @ 40 V

50pF @ 2V, 1MHz

Surface Mount

0402 (1006 Metric)

2-DSN (1x0.6), (0402)

150°C

SV560L_R2_00001

Panjit International Inc.

DIODE SCHOTTKY 60V 5A TO277

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫9,300

60 V

5A

670 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 60 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277

-55°C ~ 150°C

BYWB29-150HE3_A-P

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 150V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: -

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150 V

8A

1.3 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

10 µA @ 150 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 150°C

S53120

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

パッケージ: -

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-

1N4937-AP

Micro Commercial Co

DIODE GEN PURP 600V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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600 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

5 µA @ 600 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

SE8D20D-M3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 2A SLIMSMAW

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

在庫42,000

200 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

1.2 µs

5 µA @ 200 V

12pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SlimSMAW (DO-221AD)

-55°C ~ 175°C

US1M-EVL-CT

Venkel

Rectifier,SMA,1000V,1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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1000 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

1 µA @ 1000 V

-

Surface Mount

DO-214AC, SMA

-

-55°C ~ 150°C

LSR104-L0

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 1A MELF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C

パッケージ: -

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40 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 40 V

110pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

MELF

-65°C ~ 125°C

SMBT1583LT3G

onsemi

SS SOT23 DR XSTR SPCL TR

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

パッケージ: -

Request a Quote

-

HER108-AP

Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: -

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1000 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 1000 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 125°C

CD6761

Microchip Technology

DIODE SCHOTTKY 100V 1A DIE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: -

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100 V

1A

750 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

-

Surface Mount

Die

-55°C ~ 125°C

SDURD1540

SMC Diode Solutions

DIODE GEN PURP 400V 15A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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400 V

15A

1.25 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

10 µA @ 400 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

-55°C ~ 150°C

BAS321J-QF

Nexperia USA Inc.

BAS321J-Q/SOD323F/SOD323F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C

パッケージ: -

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200 V

250mA

1.25 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

100 nA @ 200 V

2pF @ 0V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323F

150°C

MBR10150H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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150 V

10A

1.05 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 150 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

VS-18TQ035STRLHM3

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 35V 18A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35 V
Current - Average Rectified (Io): 18A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

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35 V

18A

600 mV @ 18 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2.5 mA @ 35 V

1400pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 175°C

HS3MH

Taiwan Semiconductor Corporation

75NS, 3A, 1000V, HIGH EFFICIENT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

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在庫9,000

1000 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 1000 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

B250A-13-F-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Capacitance @ Vr, F: 200pF @ 40V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

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50 V

2A

700 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 50 V

200pF @ 40V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

JANTXV1N3293R

Microchip Technology

DIODE GEN PURP 600V 100A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

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600 V

100A

1.55 V @ 310 A

Standard Recovery >500ns, > 200mA (Io)

-

10 mA @ 600 V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C