ページ 876 - ダイオード - 整流器 - シングル | ディスクリート半導体製品 | Heisener Electronics
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ダイオード - 整流器 - シングル

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説明
パッケージ
在庫
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SIDC14D60E6
Infineon Technologies

DIODE GEN PURP 600V 30A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: Die
在庫5,664
600V
30A (DC)
1.25V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
CDBMH340-G
Comchip Technology

DIODE SCHOTTKY 40V 3A SOD123T

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 40V
  • Capacitance @ Vr, F: 250pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123T
  • Supplier Device Package: SOD-123T
  • Operating Temperature - Junction: -55°C ~ 125°C
パッケージ: SOD-123T
在庫5,664
40V
3A (DC)
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
250pF @ 4V, 1MHz
Surface Mount
SOD-123T
SOD-123T
-55°C ~ 125°C
CMHSH-3 BK
Central Semiconductor Corp

DIODE SCHOTTKY 30V 200MA SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 7ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 7pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: SOD-123
在庫2,400
30V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
7ns
2µA @ 25V
7pF @ 1V, 1MHz
Surface Mount
SOD-123
SOD-123
-65°C ~ 150°C
hot VSSB3L6S-M3/52T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2.6A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2.6A
  • Voltage - Forward (Vf) (Max) @ If: 590mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.2mA @ 60V
  • Capacitance @ Vr, F: 358pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: DO-214AA, SMB
在庫90,000
60V
2.6A
590mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.2mA @ 60V
358pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SE10PJHM3/84A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 780ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: DO-220AA
在庫4,976
600V
1A
1.05V @ 1A
Standard Recovery >500ns, > 200mA (Io)
780ns
5µA @ 600V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
1N5817-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 125°C
パッケージ: DO-204AL, DO-41, Axial
在庫4,256
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 125°C
1N5818HA0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: 55pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 125°C
パッケージ: DO-204AL, DO-41, Axial
在庫4,240
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
RSFDL RQG
TSC America Inc.

DIODE, FAST, 0.5A, 200V, 150NS,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: DO-219AB
在庫7,056
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
S1KLW RVG
TSC America Inc.

DIODE, 1A, 800V, SOD-123W

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD123W
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: SOD-123W
在庫4,192
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 800V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
SS16HE
Fairchild/ON Semiconductor

DIODE SCHOTTKY 60V 1A SOD323HE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 8.3ns
  • Current - Reverse Leakage @ Vr: 50µA @ 60V
  • Capacitance @ Vr, F: 43pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: SOD-323HE
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: 2-SMD, Flat Lead
在庫3,232
60V
1A
680mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
8.3ns
50µA @ 60V
43pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
SOD-323HE
-55°C ~ 150°C
VS-70HFR20
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 70A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -65°C ~ 180°C
パッケージ: DO-203AB, DO-5, Stud
在庫6,252
200V
70A
1.35V @ 220A
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 200V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-65°C ~ 180°C
RBR5L30BTE25
Rohm Semiconductor

DIODE SCHOTTKY 30V 5A PMDS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: PMDS
  • Operating Temperature - Junction: 150°C (Max)
パッケージ: DO-214AC, SMA
在庫5,088
30V
5A
490mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 30V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C (Max)
hot S3KB-13-F
Diodes Incorporated

DIODE GEN PURP 800V 3A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: DO-214AA, SMB
在庫515,100
800V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
SK26ATR
SMC Diode Solutions

DIODE SCHOTTKY 60V SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 60V
  • Capacitance @ Vr, F: 250pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 125°C
パッケージ: DO-214AC, SMA
在庫581,490
60V
-
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
250pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 125°C
hot BAS21LT3G
ON Semiconductor

DIODE GEN PURP 250V 200MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 200V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫120,000
250V
200mA (DC)
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
-55°C ~ 150°C
CMSH3-40M TR13
Central Semiconductor Corp

DIODE SCHOTTKY 40V 3A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 280pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: DO-214AA, SMB
在庫21,786
40V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
280pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
CDBU0130R
Comchip Technology

DIODE SCHOTTKY 30V 100MA 0603

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 10V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 0603C/SOD-523F
  • Operating Temperature - Junction: 125°C (Max)
パッケージ: 2-SMD, No Lead
在庫1,163,160
30V
100mA
450mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
500nA @ 10V
-
Surface Mount
2-SMD, No Lead
0603C/SOD-523F
125°C (Max)
hot S1PB-M3/84A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 6pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: DO-220AA
在庫324,000
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
1µA @ 100V
6pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
JANTX1N6775
Microchip Technology

DIODE GEN PURP 100V 15A TO257

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 mV
  • Capacitance @ Vr, F: 300pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-257-3
  • Supplier Device Package: TO-257
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: -
Request a Quote
100 V
15A
1.15 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 800 mV
300pF @ 5V, 1MHz
Through Hole
TO-257-3
TO-257
-65°C ~ 150°C
SBE001-TL-E
onsemi

DIODE SCHOTTKY 30V 2A 6CPH

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 15 V
  • Capacitance @ Vr, F: 70pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-CPH
  • Operating Temperature - Junction: -55°C ~ 125°C
パッケージ: -
Request a Quote
30 V
2A
550 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
20 ns
100 µA @ 15 V
70pF @ 10V, 1MHz
Surface Mount
SC-74, SOT-457
6-CPH
-55°C ~ 125°C
SK16F_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 60V 1A SMBF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBF
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
Request a Quote
60 V
1A
700 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
50pF @ 4V, 1MHz
Surface Mount
DO-221AA, SMB Flat Leads
SMBF
-55°C ~ 150°C
RB501SM-30T2R
Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA EMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: EMD2
  • Operating Temperature - Junction: 125°C
パッケージ: -
在庫18,846
30 V
100mA
350 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
10 µA @ 10 V
-
Surface Mount
SC-79, SOD-523
EMD2
125°C
VS-MBR1035-M3
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 35V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 35 V
  • Capacitance @ Vr, F: 600pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: -
在庫219
35 V
10A
840 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 35 V
600pF @ 5V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
F1T7G
Taiwan Semiconductor Corporation

DIODE GEN PURP 1A TS-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
在庫15,000
1000 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 1000 V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
1N3911A
Microchip Technology

FAST RECOVERY RECTIFIER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 15 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 150°C
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200 V
50A
1.4 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
15 µA @ 200 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-65°C ~ 150°C
CMR1-10M-BK
Central Semiconductor Corp

DIODE GEN PURP 1KV 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: -
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1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1000 V
8pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
SSL22H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 125°C
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20 V
2A
410 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
400 µA @ 20 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
MBR15U100Q-TP
Micro Commercial Co

SCHOTTKY BARRIER RECTIFIERS 100V

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 400pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫23,694
100 V
15A
880 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 100 V
400pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277
-55°C ~ 175°C
JANTXV1N4245-TR
Microchip Technology

DIODE GEN PURP 200V 1A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: -
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200 V
1A
1.3 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
5 µs
1 µA @ 200 V
-
Through Hole
A, Axial
A, Axial
-65°C ~ 175°C
CRSH25-4
Central Semiconductor Corp

DIODE SCHOTTKY 40V 25A DO4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 mA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
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40 V
25A
580 mV @ 25 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2 mA @ 40 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-55°C ~ 175°C