ページ 961 - ダイオード - 整流器 - シングル | ディスクリート半導体製品 | Heisener Electronics
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ダイオード - 整流器 - シングル

レコード 52,788
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説明
パッケージ
在庫
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RGP30ML-6888E3/72
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
パッケージ: -
在庫5,056
-
-
-
-
-
-
-
-
-
-
-
hot SBL830
Diodes Incorporated

DIODE SCHOTTKY 30V 8A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: TO-220-2
在庫5,568
30V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
1N5818M-13
Diodes Incorporated

DIODE SCHOTTKY 30V 1A MELF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -60°C ~ 125°C
パッケージ: DO-213AB, MELF (Glass)
在庫2,688
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Surface Mount
DO-213AB, MELF (Glass)
MELF
-60°C ~ 125°C
SD101A-A
Diodes Incorporated

DIODE SCHOTTKY 60V 15MA DO35

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 15mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 200nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: DO-204AH, DO-35, Axial
在庫3,536
60V
15mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 50V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
VS-10ETS10STRR-M3
Vishay Semiconductor Diodes Division

DIODE RECT 1000V 10A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 150°C
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫4,880
1000V
10A
1.1V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 1000V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 150°C
S3BHR7G
TSC America Inc.

DIODE, 3A, 100V, AEC-Q101, DO-21

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: DO-214AB, SMC
在庫6,704
100V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 100V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
MUR110S R5G
TSC America Inc.

DIODE, ULTRA FAST, 1A, 100V, 25N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 50µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: DO-214AA, SMB
在庫5,824
100V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
SR220 R0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: DO-204AC, DO-15, Axial
在庫3,072
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SD103BWS-HG3-18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 350MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 350mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 5µA @ 20V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 125°C (Max)
パッケージ: SC-76, SOD-323
在庫3,408
30V
350mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
5µA @ 20V
50pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
125°C (Max)
FES6D
Fairchild/ON Semiconductor

6A 400V ULTRA FAST RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277-3
  • Operating Temperature - Junction: -
パッケージ: TO-277, 3-PowerDFN
在庫5,696
-
-
-
-
-
-
-
Surface Mount
TO-277, 3-PowerDFN
TO-277-3
-
1SS417,L3M
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA FSC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 40V
  • Capacitance @ Vr, F: 15pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: fSC
  • Operating Temperature - Junction: 125°C (Max)
パッケージ: 2-SMD, Flat Lead
在庫185,562
40V
100mA
620mV @ 50mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 40V
15pF @ 0V, 1MHz
Surface Mount
2-SMD, Flat Lead
fSC
125°C (Max)
S2DHE3-LTP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: -
Request a Quote
200 V
2A
1.15 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 200 V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 150°C
MUR120SH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫18,000
200 V
1A
875 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
2 µA @ 200 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
E4D20120D
Wolfspeed, Inc.

DIODE SIL CARB 1.2KV 33A TO247-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 33A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: 712pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫777
1200 V
33A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 1200 V
712pF @ 0V, 1MHz
Through Hole
TO-247-3
TO-247-3
-55°C ~ 175°C
STPS3L40UFN
STMicroelectronics

DIODE SCHOTTKY 40V 3A SMBFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBflat Notch
  • Operating Temperature - Junction: 150°C
パッケージ: -
Request a Quote
40 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
-
Surface Mount
DO-221AA, SMB Flat Leads
SMBflat Notch
150°C
SE8D30J-M3-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3A SLIMSMAW

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 19pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SlimSMAW (DO-221AD)
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫43,410
600 V
3A
1.1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
1.2 µs
10 µA @ 600 V
19pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SlimSMAW (DO-221AD)
-55°C ~ 175°C
FFSH10120A
onsemi

DIODE SIL CARB 1.2KV 17A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 17A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: 612pF @ 1V, 100kHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫1,320
1200 V
17A
1.75 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 1200 V
612pF @ 1V, 100kHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
RHRP1590
Harris Corporation

DIODE AVALANCHE 900V 15A TO220AC

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 900 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 900 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: -
Request a Quote
900 V
15A
3 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
70 ns
100 µA @ 900 V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
SVM1550VB_R2_00001
Panjit International Inc.

DIODE SCHOTTKY 50V 15A TO277B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 320 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277B
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫13,455
50 V
15A
510 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
320 µA @ 50 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277B
-55°C ~ 175°C
MMBD914TS_R1_00001
Panjit International Inc.

DIODE GEN PURP 100V 200MA SOD523

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 75 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
在庫29,547
100 V
200mA
1 V @ 10 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
5 µA @ 75 V
4pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
-55°C ~ 150°C
SK36B
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 3A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
在庫17,934
60 V
3A
750 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SB1040F_T0_00001
Panjit International Inc.

DIODE SCHOTTKY 40V 10A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
在庫5,991
40 V
10A
550 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 40 V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-55°C ~ 150°C
SS26H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
在庫16,821
60 V
2A
700 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
400 µA @ 60 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
DNA30EM2200PZ-TUB
IXYS

DIODE GEN PURP 2.2KV 30A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
  • Capacitance @ Vr, F: 7pF @ 700V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫1,500
2200 V
30A
1.26 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 2200 V
7pF @ 700V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
ND171N08KHPSA1
Infineon Technologies

DIODE GEN PURP 800V 171A PB34-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB34-1
  • Operating Temperature - Junction: 150°C (Max)
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800 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 800 V
-
Chassis Mount
Module
BG-PB34-1
150°C (Max)
SE10DTJHM3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 2.9A SMPD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2.9A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 15 µA @ 600 V
  • Capacitance @ Vr, F: 67pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
  • Supplier Device Package: SMPD
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫17,943
600 V
2.9A
1.15 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
3 µs
15 µA @ 600 V
67pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), Variant
SMPD
-55°C ~ 175°C
SK26_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 60V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 90 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
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在庫13,272
60 V
2A
700 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
90 µA @ 60 V
-
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 150°C
25FR40
Solid State Inc.

DIODE GEN PURP 400V 25A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
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400 V
25A
1.2 V @ 25 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 400 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C