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トランジスタ - バイポーラ(BJT) - RF

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Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR 181W E6327
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
  • Gain: 19dB
  • Power - Max: 175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
パッケージ: SC-70, SOT-323
在庫142
12V
8GHz
0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
19dB
175mW
70 @ 5mA, 8V
20mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
MRF8372G
Microsemi Corporation

TRANS NPN 16V 200MA SO8

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 9.5dB
  • Power - Max: 2.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫107
16V
870MHz
-
8dB ~ 9.5dB
2.2W
30 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
UTV010
Microsemi Corporation

TRANS RF BIPO 15W 1.25A 55FT-5

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11.5dB
  • Power - Max: 15W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1.25A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
パッケージ: 55FT
在庫336
24V
470MHz ~ 860MHz
-
11.5dB
15W
15 @ 200mA, 5V
1.25A
200°C (TJ)
Chassis, Stud Mount
55FT
55FT
AT-41500-GP4
Broadcom Limited

IC TRANS NPN GP BIPOLAR 86PP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
  • Gain: 8dB ~ 17dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: Die
在庫289
12V
8GHz
1.4dB ~ 3dB @ 1GHz ~ 4GHz
8dB ~ 17dB
500mW
30 @ 10mA, 8V
60mA
200°C (TJ)
Surface Mount
Die
Die
MPSH17_D26Z
Fairchild/ON Semiconductor

TRANS NPN 15V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 6dB @ 200MHz
  • Gain: 24dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫242
15V
800MHz
6dB @ 200MHz
24dB
350mW
25 @ 5mA, 10V
-
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BF240_J35Z
Fairchild/ON Semiconductor

TRANS RF NPN 40V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫144
40V
1.1GHz
-
-
350mW
65 @ 1mA, 10V
50mA
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
AT-42085G
Broadcom Limited

TRANS NPN BIPO 12V 80MA 45MD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3.5dB @ 2GHz ~ 4GHz
  • Gain: 9.5dB ~ 13.5dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD (85 Plastic)
  • Supplier Device Package: 85 Plastic
パッケージ: 4-SMD (85 Plastic)
在庫490
12V
8GHz
2dB ~ 3.5dB @ 2GHz ~ 4GHz
9.5dB ~ 13.5dB
500mW
30 @ 35mA, 8V
80mA
150°C (TJ)
Surface Mount
4-SMD (85 Plastic)
85 Plastic
NE851M33-T3-A
CEL

TRANSISTOR NPN 2GHZ M33

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
  • Gain: -
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SuperMiniMold (M33)
パッケージ: 3-SMD, Flat Leads
在庫209
5.5V
4.5GHz
1.9dB ~ 2.5dB @ 2GHz
-
130mW
100 @ 5mA, 1V
100mA
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-SuperMiniMold (M33)
NE68539-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 11dB
  • Power - Max: 180mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
パッケージ: TO-253-4, TO-253AA
在庫474
6V
12GHz
1.5dB @ 2GHz
11dB
180mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
NE68018-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 10.2dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
パッケージ: SC-82A, SOT-343
在庫288
10V
10GHz
1.8dB @ 2GHz
10.2dB
150mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
ZTX325STZ
Diodes Incorporated

TRANSISTOR RF NPN E-LINE

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 5dB @ 500MHz
  • Gain: 53dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
パッケージ: E-Line-3, Formed Leads
在庫470
15V
1.3GHz
5dB @ 500MHz
53dB
350mW
25 @ 2mA, 1V
50mA
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
hotBF494
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 20V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA)
在庫1,117,206
20V
-
-
-
350mW
67 @ 1mA, 10V
30mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
NESG2101M05-A
CEL

TRANS NPN 2GHZ M05

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 17GHz
  • Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
  • Gain: 11dB ~ 19dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: M05
パッケージ: SOT-343F
在庫180
5V
17GHz
0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
11dB ~ 19dB
500mW
130 @ 15mA, 2V
100mA
150°C (TJ)
Surface Mount
SOT-343F
M05
hotAT-41511-TR1G
Broadcom Limited

IC TRANS NPN GP BIPOLAR SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
  • Gain: 11dB ~ 15.5dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
パッケージ: TO-253-4, TO-253AA
在庫132,648
12V
-
1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
11dB ~ 15.5dB
225mW
30 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
hot2SC24040CL
Panasonic Electronic Components

TRANS NPN 20VCEO 15MA MINI-3P

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫5,640
20V
650MHz
3.3dB @ 100MHz
24dB
150mW
65 @ 1mA, 6V
15mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
BFS17A,235
NXP

TRANS NPN 15V 25MA 3GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 2.8GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 800MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫126
15V
2.8GHz
2.5dB @ 800MHz
-
300mW
25 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
PRF957,115
NXP

TRANSISTOR SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 270mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
パッケージ: SC-70, SOT-323
在庫140
10V
8.5GHz
1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
-
270mW
50 @ 5mA, 6V
100mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
BFG25A/X,215
NXP

TRANS NPN 5V 5GHZ SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
  • Gain: -
  • Power - Max: 32mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
  • Current - Collector (Ic) (Max): 6.5mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
パッケージ: TO-253-4, TO-253AA
在庫385
5V
5GHz
1.8dB ~ 2dB @ 1GHz
-
32mW
50 @ 500µA, 1V
6.5mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
TCS1200
Microsemi Corporation

TRANSISTOR BIPO 55TU-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.2dBd
  • Power - Max: 2095W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 60A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55TU-1
  • Supplier Device Package: 55TU-1
パッケージ: 55TU-1
在庫333
65V
1.03GHz
-
10.2dBd
2095W
20 @ 1A, 5V
60A
200°C (TJ)
Chassis Mount
55TU-1
55TU-1
S200-50
Microsemi Corporation

TRANS RF BIPO 110V 30A 55HX

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 110V
  • Frequency - Transition: 1.5MHz ~ 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB ~ 14.5dB
  • Power - Max: 320W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 30A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55HX
  • Supplier Device Package: 55HX
パッケージ: 55HX
在庫205
110V
1.5MHz ~ 30MHz
-
12dB ~ 14.5dB
320W
10 @ 1A, 5V
30A
150°C (TJ)
Chassis Mount
55HX
55HX
MS1509
Microsemi Corporation

TRANS RF BIPO 260W 15A M168

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 33V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 5.5dBi
  • Power - Max: 260W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M168
  • Supplier Device Package: M168
パッケージ: M168
在庫303
33V
500MHz
-
5.5dBi
260W
20 @ 1mA, 5V
15A
200°C (TJ)
Chassis Mount
M168
M168
1000MP
Microsemi Corporation

TRANS RF BIPO 5.3W 300MA 55FW

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.8dB
  • Power - Max: 5.3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW
  • Supplier Device Package: 55FW
パッケージ: 55FW
在庫337
-
1.15GHz
-
10.8dB
5.3W
15 @ 100mA, 5V
300mA
-
Chassis Mount
55FW
55FW
hotAT-32011-TR1G
Broadcom Limited

IC TRANS NPN BIPOLAR SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
  • Gain: 12.5dB ~ 14dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
  • Current - Collector (Ic) (Max): 32mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
パッケージ: TO-253-4, TO-253AA
在庫24,126
5.5V
-
1dB ~ 1.3dB @ 900MHz
12.5dB ~ 14dB
200mW
70 @ 2mA, 2.7V
32mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
NSVF3007SG3T1G
ON Semiconductor

RF TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫441
-
-
-
-
-
-
-
-
-
-
-
BFP193WH6327XTSA1
Infineon Technologies

TRANS RF NPN 12V 80MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain: 13.5dB ~ 20.5dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
パッケージ: SC-82A, SOT-343
在庫318
12V
8GHz
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
13.5dB ~ 20.5dB
580mW
70 @ 30mA, 8V
80mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
CPH6003A-TL-E
ON Semiconductor

TRANS NPN BIPO 12V 150MA CPH6

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 800mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-CPH
パッケージ: SOT-23-6 Thin, TSOT-23-6
在庫172
12V
7GHz
1.8dB @ 1GHz
9dB
800mW
100 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-CPH
2SC5632G0L
Panasonic Electronic Components

TRANS NPN 8VCEO 50MA SMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
パッケージ: SC-85
在庫217
8V
1.1GHz
-
-
150mW
100 @ 2mA, 4V
50mA
150°C (TJ)
Surface Mount
SC-85
SMini3-F2
BFU530WX
NXP

TRANS RF NPN 12V 40MA SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 18.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
パッケージ: SC-70, SOT-323
在庫406
12V
11GHz
0.6dB @ 900MHz
18.5dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
BFP740FESDH6327XTSA1
Infineon Technologies

TRANS RF NPN 42GHZ 4.7V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 47GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
  • Gain: 9dB ~ 31dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 45mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
パッケージ: 4-SMD, Flat Leads
在庫4,560
4.7V
47GHz
0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
9dB ~ 31dB
160mW
160 @ 25mA, 3V
45mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFS17WH6327XTSA1
Infineon Technologies

TRANS RF NPN 15V 25MA SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
パッケージ: SC-70, SOT-323
在庫15,098
15V
1.4GHz
3.5dB ~ 5dB @ 800MHz
-
280mW
40 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3