ページ 2 - トランジスタ - バイポーラ(BJT) - RF | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - バイポーラ(BJT) - RF

レコード 1,633
ページ  2/59
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在庫
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Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR750L3RHE6327XTSA1
Infineon Technologies

TRANS RF BIPO NPN 90MA TSLP-3-9

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 37GHz
  • Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
  • Gain: 21dB
  • Power - Max: 360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
パッケージ: SC-101, SOT-883
在庫6,512
4.7V
37GHz
0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
21dB
360mW
160 @ 60mA, 3V
90mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BFT92E6327
Infineon Technologies

TRANS PNP RF 15V SOT-23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3.2dB @ 900MHz ~ 1.8GHz
  • Gain: 8dB ~ 13.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫6,304
15V
5GHz
2dB ~ 3.2dB @ 900MHz ~ 1.8GHz
8dB ~ 13.5dB
200mW
15 @ 15mA, 8V
25mA
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
NE68133-T1B-R35-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫2,880
10V
9GHz
1.2dB @ 1GHz
13dB
200mW
125 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
HFA3128BZ96
Intersil

IC TRANSISTOR ARRAY PNP 16-SOIC

  • Transistor Type: 5 PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
パッケージ: 16-SOIC (0.154", 3.90mm Width)
在庫4,576
15V
5.5GHz
3.5dB @ 1GHz
-
150mW
20 @ 10mA, 2V
65mA
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
AT-42036-BLKG
Broadcom Limited

TRANS NPN BIPO 12V 80MA 36-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz
  • Gain: 10dB ~ 13.5dB
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD (36 micro-X)
  • Supplier Device Package: 36 micro-X
パッケージ: 4-SMD (36 micro-X)
在庫3,392
12V
8GHz
2dB ~ 3dB @ 2GHz ~ 4GHz
10dB ~ 13.5dB
600mW
30 @ 35mA, 8V
80mA
150°C (TJ)
Surface Mount
4-SMD (36 micro-X)
36 micro-X
UPA811T-T1-A
CEL

RF DUAL TRANSISTORS NPN SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫5,120
10V
8GHz
1.9dB @ 2GHz
7.5dB
200mW
80 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
NE85634-A
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
パッケージ: TO-243AA
在庫2,224
12V
6.5GHz
1.1dB @ 1GHz
9dB
2W
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
NE851M03-A
CEL

TRANSISTOR NPN 2GHZ SOT-363

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫4,656
5.5V
4.5GHz
1.9dB ~ 2.5dB @ 2GHz
-
200mW
100 @ 5mA, 1V
100mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot KSC1730YTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 15V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫17,400
15V
1.1GHz
-
-
250mW
120 @ 5mA, 10V
50mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot HFA3134IH96
Intersil

IC TRANSISTOR UHF SOT-23-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 48 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 26mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
パッケージ: SOT-23-6
在庫99,276
9V
8.5GHz
2.4dB @ 1GHz
-
-
48 @ 10mA, 2V
26mA
150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
MPSH10RLRAG
ON Semiconductor

TRANS NPN VHF/UHF SS 25V TO92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫2,960
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot HFA3046B
Intersil

IC TRANSISTOR ARRAY NPN 14-SOIC

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
パッケージ: 14-SOIC (0.154", 3.90mm Width)
在庫4,432
12V
8GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V
65mA
150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
2SC501900L
Panasonic Electronic Components

TRANS NPN HF 10VCEO 80MA MINIPWR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 800MHz
  • Gain: 7.5dB ~ 10dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MiniP3-F1
パッケージ: TO-243AA
在庫6,224
10V
6GHz
1.7dB @ 800MHz
7.5dB ~ 10dB
1W
80 @ 20mA, 8V
80mA
150°C (TJ)
Surface Mount
TO-243AA
MiniP3-F1
NE68719-T1
CEL

TRANS NPN 2GHZ SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 2GHz
  • Gain: -
  • Power - Max: 90mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: 3-SuperMiniMold (19)
パッケージ: SOT-523
在庫6,528
3V
11GHz
1.3dB ~ 2dB @ 2GHz
-
90mW
70 @ 20mA, 2V
30mA
150°C (TJ)
Surface Mount
SOT-523
3-SuperMiniMold (19)
BFG310/XR,215
NXP

TRANS NPN 4.5V 18GHZ SOT143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB @ 2GHz
  • Gain: 18dB
  • Power - Max: 60mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
パッケージ: SOT-143R
在庫7,760
6V
14GHz
1dB @ 2GHz
18dB
60mW
60 @ 5mA, 3V
10mA
175°C (TJ)
Surface Mount
SOT-143R
SOT-143R
BFG10W/X,115
NXP

TRANS NPN 10V 250MA SOT343N

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 1.9GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343 Reverse Pinning
  • Supplier Device Package: 4-SO
パッケージ: SOT-343 Reverse Pinning
在庫4,656
10V
1.9GHz
-
-
400mW
25 @ 50mA, 5V
250mA
175°C (TJ)
Surface Mount
SOT-343 Reverse Pinning
4-SO
BFP405FH6327XTSA1
Infineon Technologies

TRANS RF NPN 4.5V 25MA TSFP-4

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
パッケージ: 4-SMD, Flat Leads
在庫6,160
-
-
-
-
-
-
-
-
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFP420H6433XTMA1
Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 21dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
パッケージ: SC-82A, SOT-343
在庫5,904
5V
25GHz
1.1dB @ 1.8GHz
21dB
160mW
60 @ 20mA, 4V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
BFR380FH6327XTSA1
Infineon Technologies

TRANS RF NPN 6V 80MA TSFP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
  • Gain: 9.5dB ~ 13.5dB
  • Power - Max: 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
パッケージ: SOT-723
在庫3,408
9V
14GHz
1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
9.5dB ~ 13.5dB
380mW
90 @ 40mA, 3V
80mA
150°C (TJ)
Surface Mount
SOT-723
PG-TSFP-3
SD1224
Microsemi Corporation

TRANS RF BIPO 60W 5A M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.6dB
  • Power - Max: 60W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M135
  • Supplier Device Package: M135
パッケージ: M135
在庫5,328
35V
175MHz
-
7.6dB
60W
20 @ 500mA, 5V
5A
200°C (TJ)
Chassis Mount
M135
M135
NSVF4020SG4T1G
ON Semiconductor

RF TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫3,408
-
-
-
-
-
-
-
-
-
-
-
BFP520FH6327XTSA1
Infineon Technologies

TRANS RF NPN 3.5V 40MA 4TSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
  • Gain: 22.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
パッケージ: 4-SMD, Flat Leads
在庫6,800
3.5V
45GHz
0.95dB @ 1.8GHz
22.5dB
100mW
70 @ 20mA, 2V
40mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
hot 2SC4774T106S
Rohm Semiconductor

TRANS NPN 6V 50MA SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
パッケージ: SC-70, SOT-323
在庫1,483,500
6V
800MHz
-
-
200mW
180 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
UMT3
SD1143-01
Microsemi Corporation

RF TRANS NPN 18V 175MHZ M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 20W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 2A
  • Operating Temperature: 200°C
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
パッケージ: -
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18V
175MHz
-
10dB
20W
5 @ 250mA, 5V
2A
200°C
Chassis Mount
M113
M113
PBR941
NXP Semiconductors

RF SMALL SIGNAL BIPOLAR TRANSIST

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
  • Gain: 16dB
  • Power - Max: 360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
パッケージ: -
Request a Quote
10V
9GHz
1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
16dB
360mW
100 @ 5mA, 6V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
BFP420E6327
Infineon Technologies

RF TRANSISTOR, X BAND, NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 21dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
パッケージ: -
Request a Quote
5V
25GHz
1.1dB @ 1.8GHz
21dB
160mW
60 @ 20mA, 4V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
2SC6023-TR-E
onsemi

NPN 35MA 3.5V FT=14.5G

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 14.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
  • Gain: 9.5dB ~ 11dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: 4-MCP
パッケージ: -
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3.5V
14.5GHz
1.2dB @ 2GHz
9.5dB ~ 11dB
120mW
80 @ 15mA, 3V
35mA
-
Surface Mount
SC-82A, SOT-343
4-MCP
2SC5594XP-TL-E
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 24GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1.8GHz
  • Gain: 18dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
パッケージ: -
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4.5V
24GHz
1.2dB @ 1.8GHz
18dB
100mW
60 @ 20mA, 2V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4