ページ 18 - トランジスタ - バイポーラ（BJT） - RF | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP 620F E7764	Infineon Technologies	TRANSISTOR RF NPN 2.3V TSFP-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 65GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 21dB Power - Max: 185mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	パッケージ: 4-SMD, Flat Leads	在庫4,848	2.8V	65GHz	0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz	21dB	185mW	110 @ 50mA, 1.5V	80mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
BFS17SE6327HTSA1	Infineon Technologies	DUAL NPN TRANS RADIO FREQ BROAD Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	パッケージ: 6-VSSOP, SC-88, SOT-363	在庫7,216	15V	1.4GHz	3dB ~ 5dB @ 800MHz	-	280mW	40 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
MS1579	Microsemi Corporation	TRANS RF BIPO 65W 5.2A M156 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 65W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 20V Current - Collector (Ic) (Max): 5.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M156 Supplier Device Package: M156	パッケージ: M156	在庫3,360	25V	470MHz ~ 860MHz	-	8.5dB	65W	10 @ 500mA, 20V	5.2A	200°C (TJ)	Chassis Mount	M156	M156
NE678M04-T2-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 13.5dB Power - Max: 205mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	パッケージ: SOT-343F	在庫5,504	6V	12GHz	1.7dB @ 2GHz	13.5dB	205mW	75 @ 30mA, 3V	100mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
NE662M04-T2-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 2GHz Gain: 18dB Power - Max: 115mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	パッケージ: SOT-343F	在庫319,560	3.3V	25GHz	1.1dB @ 2GHz	18dB	115mW	50 @ 5mA, 2V	35mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
2SC5277A-2-TL-E	ON Semiconductor	TRANS NPN BIPO 30MA 10V SMCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz Gain: 10dB ~ 5.5dB @ 1.5GHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SMCP	パッケージ: SC-75, SOT-416	在庫36,000	10V	8GHz	1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz	10dB ~ 5.5dB @ 1.5GHz	100mW	90 @ 10mA, 5V	30mA	-	Surface Mount	SC-75, SOT-416	SMCP
START499ETR	STMicroelectronics	TRANS RF SILICON NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 1.9GHz Noise Figure (dB Typ @ f): 3.3dB @ 1.8GHz Gain: 15dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 160mA, 4V Current - Collector (Ic) (Max): 600mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	パッケージ: SC-82A, SOT-343	在庫6,016	4.5V	1.9GHz	3.3dB @ 1.8GHz	15dB	600mW	160 @ 160mA, 4V	600mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
BLS3135-50,114	NXP	TRANSISTOR RF POWER SOT422A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 3.5GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 80W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V Current - Collector (Ic) (Max): 6A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-422A Supplier Device Package: CDFM2	パッケージ: SOT-422A	在庫6,256	75V	3.5GHz	-	8dB	80W	40 @ 1.5A, 5V	6A	200°C (TJ)	Surface Mount	SOT-422A	CDFM2
BFS17,215	NXP	TRANS NPN 25MA 15V 1GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 4.5dB @ 500MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫3,760	15V	1GHz	4.5dB @ 500MHz	-	300mW	25 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFG410W,115	NXP	TRANS NPN 4.5V 22GHZ SOT343R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz Gain: 21dB Power - Max: 54mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V Current - Collector (Ic) (Max): 12mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	パッケージ: SC-82A, SOT-343	在庫3,312	4.5V	22GHz	0.9dB ~ 1.2dB @ 900MHz ~ 2GHz	21dB	54mW	50 @ 10mA, 2V	12mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
PRF957,115	NXP	TRANSISTOR SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz Gain: - Power - Max: 270mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Current - Collector (Ic) (Max): 100mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	パッケージ: SC-70, SOT-323	在庫2,240	10V	8.5GHz	1.3dB ~ 1.8dB @ 1GHz ~ 2GHz	-	270mW	50 @ 5mA, 6V	100mA	175°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BFG198,115	NXP	TRANS NPN 10V 8GHZ SC73 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	パッケージ: TO-261-4, TO-261AA	在庫5,008	10V	8GHz	-	-	1W	40 @ 50mA, 5V	100mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BFG10/X,215	NXP	TRANS RF NPN 2GHZ 8V SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 1.9GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	パッケージ: TO-253-4, TO-253AA	在庫2,064	8V	1.9GHz	-	7dB	400mW	25 @ 50mA, 5V	250mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
1214-110M	Microsemi Corporation	TRANS RF BIPO 270W 8A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.4dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	パッケージ: 55KT	在庫6,144	75V	1.2GHz ~ 1.4GHz	-	7.4dB	270W	-	8A	200°C (TJ)	Chassis Mount	55KT	55KT
2224-6L	Microsemi Corporation	TRANS RF BIPO 22W 1.25A 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 2.2GHz ~ 2.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 22W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 1.25A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LV Supplier Device Package: 55LV	パッケージ: 55LV	在庫4,496	40V	2.2GHz ~ 2.4GHz	-	7dB	22W	20 @ 1A, 5V	1.25A	200°C (TJ)	Chassis Mount	55LV	55LV
TPR400	Microsemi Corporation	TRANS RF BIPO 875W 30A 55CX1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 7.27dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	パッケージ: 55CX	在庫5,552	55V	1.03GHz ~ 1.09GHz	-	7.27dB	875W	10 @ 2.5A, 5V	30A	200°C (TJ)	Chassis Mount	55CX	55CX
2SC3583-T1B-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 13dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫14,748	10V	9GHz	1.2dB @ 1GHz	13dB	200mW	50 @ 20mA, 8V	65mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SC5415AF-TD-E	ON Semiconductor	TRANS NPN BIPO 0.1A 12V Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 9dB Power - Max: 800mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	パッケージ: TO-243AA	在庫3,760	12V	6.7GHz	1.1dB @ 1GHz	9dB	800mW	90 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	TO-243AA	PCP
2SC5245A-4-TL-E	ON Semiconductor	TRANS NPN BIPO UHF-LNA MCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 3dB @ 1GHz ~ 1.5GHz Gain: 10dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-MCP	パッケージ: SC-70, SOT-323	在庫5,392	10V	8GHz	0.9dB ~ 3dB @ 1GHz ~ 1.5GHz	10dB	150mW	90 @ 10mA, 5V	30mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	3-MCP
AT-32033-TR2G	Broadcom Limited	TRANS NPN BIPO 5.5V 32MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 11dB ~ 12.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫2,608	5.5V	-	1dB ~ 1.3dB @ 900MHz	11dB ~ 12.5dB	200mW	70 @ 2mA, 2.7V	32mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SC24040DL	Panasonic Electronic Components	TRANS NPN 20VCEO 15MA MINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3.3dB @ 100MHz Gain: 24dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫3,376	20V	650MHz	3.3dB @ 100MHz	24dB	150mW	100 @ 1mA, 6V	15mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
BFP620FH7764XTSA1	Infineon Technologies	TRANS RF NPN 2.8V 80MA 4TSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 65GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 21dB ~ 10dB Power - Max: 185mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	パッケージ: 4-SMD, Flat Leads	在庫6,736	2.8V	65GHz	0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz	21dB ~ 10dB	185mW	110 @ 50mA, 1.5V	80mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
BFP740H6327XTSA1	Infineon Technologies	TRANS RF NPN 42GHZ 4.7V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz Gain: 27dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	パッケージ: SC-82A, SOT-343	在庫3,184	4.7V	42GHz	0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz	27dB	160mW	160 @ 25mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
SD1536-01	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NSVF4015SG4T1G	onsemi	RF TRANS NPN 12V 10GHZ SC82FL/ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 17dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: SC-82FL/MCPH4	パッケージ: -	在庫5,511	12V	10GHz	1.2dB @ 1GHz	17dB	450mW	60 @ 50mA, 5V	100mA	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Flat Leads	SC-82FL/MCPH4
2SC5011-A	CEL	RF TRANS NPN 12V 6.5GHZ SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: -	パッケージ: -	Request a Quote	12V	6.5GHz	1.1dB @ 1GHz	13dB	150mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	-
2SC3127ID-TL-E	Renesas Electronics Corporation	RF 0.05A, NPN Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1802-01	Microsemi Corporation	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BFP 620F E7764

Infineon Technologies

TRANSISTOR RF NPN 2.3V TSFP-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.8V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain: 21dB
Power - Max: 185mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

パッケージ: 4-SMD, Flat Leads

在庫4,848

2.8V

65GHz

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

21dB

185mW

110 @ 50mA, 1.5V

80mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

BFS17SE6327HTSA1

Infineon Technologies

DUAL NPN TRANS RADIO FREQ BROAD

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

パッケージ: 6-VSSOP, SC-88, SOT-363

在庫7,216

15V

1.4GHz

3dB ~ 5dB @ 800MHz

-

280mW

40 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

MS1579

Microsemi Corporation

TRANS RF BIPO 65W 5.2A M156

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 65W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 20V
Current - Collector (Ic) (Max): 5.2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M156
Supplier Device Package: M156

パッケージ: M156

在庫3,360

25V

470MHz ~ 860MHz

-

8.5dB

65W

10 @ 500mA, 20V

5.2A

200°C (TJ)

Chassis Mount

M156

NE678M04-T2-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 13.5dB
Power - Max: 205mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

パッケージ: SOT-343F

在庫5,504

6V

12GHz

1.7dB @ 2GHz

13.5dB

205mW

75 @ 30mA, 3V

100mA

150°C (TJ)

Surface Mount

SOT-343F

NE662M04-T2-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
Gain: 18dB
Power - Max: 115mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

パッケージ: SOT-343F

在庫319,560

3.3V

25GHz

1.1dB @ 2GHz

18dB

115mW

50 @ 5mA, 2V

35mA

150°C (TJ)

Surface Mount

SOT-343F

2SC5277A-2-TL-E

ON Semiconductor

TRANS NPN BIPO 30MA 10V SMCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz
Gain: 10dB ~ 5.5dB @ 1.5GHz
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SMCP

パッケージ: SC-75, SOT-416

在庫36,000

10V

8GHz

1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz

10dB ~ 5.5dB @ 1.5GHz

100mW

90 @ 10mA, 5V

30mA

-

Surface Mount

SC-75, SOT-416

SMCP

START499ETR

STMicroelectronics

TRANS RF SILICON NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 1.9GHz
Noise Figure (dB Typ @ f): 3.3dB @ 1.8GHz
Gain: 15dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 160mA, 4V
Current - Collector (Ic) (Max): 600mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

パッケージ: SC-82A, SOT-343

在庫6,016

4.5V

1.9GHz

3.3dB @ 1.8GHz

15dB

600mW

160 @ 160mA, 4V

600mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

BLS3135-50,114

NXP

TRANSISTOR RF POWER SOT422A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 3.5GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 80W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Current - Collector (Ic) (Max): 6A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-422A
Supplier Device Package: CDFM2

パッケージ: SOT-422A

在庫6,256

75V

3.5GHz

-

8dB

80W

40 @ 1.5A, 5V

6A

200°C (TJ)

Surface Mount

SOT-422A

CDFM2

BFS17,215

NXP

TRANS NPN 25MA 15V 1GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫3,760

15V

1GHz

4.5dB @ 500MHz

-

300mW

25 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFG410W,115

NXP

TRANS NPN 4.5V 22GHZ SOT343R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain: 21dB
Power - Max: 54mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
Current - Collector (Ic) (Max): 12mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

パッケージ: SC-82A, SOT-343

在庫3,312

4.5V

22GHz

0.9dB ~ 1.2dB @ 900MHz ~ 2GHz

21dB

54mW

50 @ 10mA, 2V

12mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

PRF957,115

NXP

TRANSISTOR SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 270mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

パッケージ: SC-70, SOT-323

在庫2,240

10V

8.5GHz

1.3dB ~ 1.8dB @ 1GHz ~ 2GHz

-

270mW

50 @ 5mA, 6V

100mA

175°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BFG198,115

NXP

TRANS NPN 10V 8GHZ SC73

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

パッケージ: TO-261-4, TO-261AA

在庫5,008

10V

8GHz

-

1W

40 @ 50mA, 5V

100mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BFG10/X,215

NXP

TRANS RF NPN 2GHZ 8V SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 1.9GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

パッケージ: TO-253-4, TO-253AA

在庫2,064

8V

1.9GHz

-

7dB

400mW

25 @ 50mA, 5V

250mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

1214-110M

Microsemi Corporation

TRANS RF BIPO 270W 8A 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.4dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

パッケージ: 55KT

在庫6,144

75V

1.2GHz ~ 1.4GHz

-

7.4dB

270W

-

8A

200°C (TJ)

Chassis Mount

55KT

2224-6L

Microsemi Corporation

TRANS RF BIPO 22W 1.25A 55LV1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 2.2GHz ~ 2.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 22W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 1.25A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LV
Supplier Device Package: 55LV

パッケージ: 55LV

在庫4,496

40V

2.2GHz ~ 2.4GHz

-

7dB

22W

20 @ 1A, 5V

1.25A

200°C (TJ)

Chassis Mount

55LV

TPR400

Microsemi Corporation

TRANS RF BIPO 875W 30A 55CX1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 7.27dB
Power - Max: 875W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CX
Supplier Device Package: 55CX

パッケージ: 55CX

在庫5,552

55V

1.03GHz ~ 1.09GHz

-

7.27dB

875W

10 @ 2.5A, 5V

30A

200°C (TJ)

Chassis Mount

55CX

2SC3583-T1B-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫14,748

10V

9GHz

1.2dB @ 1GHz

13dB

200mW

50 @ 20mA, 8V

65mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SC5415AF-TD-E

ON Semiconductor

TRANS NPN BIPO 0.1A 12V

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 9dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

パッケージ: TO-243AA

在庫3,760

12V

6.7GHz

1.1dB @ 1GHz

9dB

800mW

90 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

TO-243AA

PCP

2SC5245A-4-TL-E

ON Semiconductor

TRANS NPN BIPO UHF-LNA MCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 3dB @ 1GHz ~ 1.5GHz
Gain: 10dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-MCP

パッケージ: SC-70, SOT-323

在庫5,392

10V

8GHz

0.9dB ~ 3dB @ 1GHz ~ 1.5GHz

10dB

150mW

90 @ 10mA, 5V

30mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

3-MCP

AT-32033-TR2G

Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 11dB ~ 12.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫2,608

5.5V

-

1dB ~ 1.3dB @ 900MHz

11dB ~ 12.5dB

200mW

70 @ 2mA, 2.7V

32mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SC24040DL

Panasonic Electronic Components

TRANS NPN 20VCEO 15MA MINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
Gain: 24dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫3,376

20V

650MHz

3.3dB @ 100MHz

24dB

150mW

100 @ 1mA, 6V

15mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

BFP620FH7764XTSA1

Infineon Technologies

TRANS RF NPN 2.8V 80MA 4TSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.8V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain: 21dB ~ 10dB
Power - Max: 185mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

パッケージ: 4-SMD, Flat Leads

在庫6,736

2.8V

65GHz

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

21dB ~ 10dB

185mW

110 @ 50mA, 1.5V

80mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

BFP740H6327XTSA1

Infineon Technologies

TRANS RF NPN 42GHZ 4.7V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Gain: 27dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

パッケージ: SC-82A, SOT-343

在庫3,184

4.7V

42GHz

0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz

27dB

160mW

160 @ 25mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

SD1536-01

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

NSVF4015SG4T1G

onsemi

RF TRANS NPN 12V 10GHZ SC82FL/

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 17dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: SC-82FL/MCPH4

パッケージ: -

在庫5,511

12V

10GHz

1.2dB @ 1GHz

17dB

450mW

60 @ 50mA, 5V

100mA

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Flat Leads

SC-82FL/MCPH4

2SC5011-A

CEL

RF TRANS NPN 12V 6.5GHZ SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: -

パッケージ: -

Request a Quote

12V

6.5GHz

1.1dB @ 1GHz

13dB

150mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

-

2SC3127ID-TL-E

Renesas Electronics Corporation

RF 0.05A, NPN

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

SD1802-01

Microsemi Corporation

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-