ページ 22 - トランジスタ - バイポーラ（BJT） - RF | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP650E6327HTSA1	Infineon Technologies	TRANSISTOR RF NPN 4.5V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 37GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Gain: 10.5dB ~ 21.5dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	パッケージ: SC-82A, SOT-343	在庫3,584	4.5V	37GHz	0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz	10.5dB ~ 21.5dB	500mW	110 @ 80mA, 3V	150mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFR 181 E6780	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 18.5dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫6,592	12V	8GHz	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	18.5dB	175mW	70 @ 5mA, 8V	20mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
MRF559T	Microsemi Corporation	COMM/BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,464	16V	870MHz	-	9.5dB	2W	30 @ 50mA, 10V	150mA	-	-	-	-
MRF323	M/A-Com Technology Solutions	TRANS RF NPN 33V 1.1A 244-04 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 33V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 11dB Power - Max: 20W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 2.2A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 244-04 Supplier Device Package: 244-04, STYLE 1	パッケージ: 244-04	在庫6,080	33V	-	-	11dB	20W	20 @ 1A, 5V	2.2A	-	Chassis Mount	244-04	244-04, STYLE 1
MPS5179RLRPG	ON Semiconductor	TRANSISTOR NPN RF BIPO 12V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫7,552	12V	2GHz	-	-	200W	25 @ 3mA, 1V	50mA	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
NE85630-R25-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	パッケージ: SC-70, SOT-323	在庫3,328	12V	4.5GHz	1.2dB @ 1GHz	9dB	150mW	125 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
KSC1393OTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 30V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz Gain: 20dB ~ 24dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫3,136	30V	700MHz	2dB ~ 3dB @ 200MHz	20dB ~ 24dB	250mW	60 @ 2mA, 10V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MBC13900T1	NXP	IC TRANS NPN RF LOW NOISE SC70-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6.5V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz Gain: 15dB ~ 22dB Power - Max: 188mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	パッケージ: SC-82A, SOT-343	在庫5,200	6.5V	15GHz	0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz	15dB ~ 22dB	188mW	100 @ 5mA, 2V	20mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
BFG591,115	NXP	TRANS NPN 15V 7GHZ SOT-223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	パッケージ: TO-261-4, TO-261AA	在庫4,736	15V	7GHz	-	-	2W	60 @ 70mA, 8V	200mA	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BFQ 19S E6327	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz Gain: 7dB ~ 11.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V Current - Collector (Ic) (Max): 210mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	パッケージ: TO-243AA	在庫7,984	15V	5.5GHz	1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz	7dB ~ 11.5dB	1W	70 @ 70mA, 8V	210mA	150°C (TJ)	Surface Mount	TO-243AA	PG-SOT89
BFP720FH6327XTSA1	Infineon Technologies	TRANS RF NPN 45GHZ 3.5V TSFP-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz Gain: 10.5dB ~ 28dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	パッケージ: 4-SMD, Flat Leads	在庫2,400	4.7V	45GHz	0.4dB ~ 1dB @ 150MHz ~ 10GHz	10.5dB ~ 28dB	100mW	160 @ 13mA, 3V	25mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
MS2200	Microsemi Corporation	TRANS RF BIPO 1167W 43.2A MS102 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 400MHz ~ 500MHz Noise Figure (dB Typ @ f): - Gain: 9.7dB Power - Max: 1167W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 43.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M102 Supplier Device Package: M102	パッケージ: M102	在庫7,408	65V	400MHz ~ 500MHz	-	9.7dB	1167W	20 @ 5A, 5V	43.2A	200°C (TJ)	Chassis Mount	M102	M102
1035MP	Microsemi Corporation	TRANS RF BIPO 125W 2.5A 55FW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB ~ 10.5dB Power - Max: 125W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW-1 Supplier Device Package: 55FW-1	パッケージ: 55FW-1	在庫7,664	65V	1.025GHz ~ 1.15GHz	-	10dB ~ 10.5dB	125W	20 @ 100mA, 5V	2.5A	200°C (TJ)	Chassis Mount	55FW-1	55FW-1
BFU580GX	NXP	TRANS RF NPN 12V 60MA SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz Gain: 10.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	パッケージ: TO-261-4, TO-261AA	在庫5,088	12V	11GHz	1.4dB @ 1.8GHz	10.5dB	1W	60 @ 30mA, 8V	60mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
MMBTH24-7	Diodes Incorporated	TRANS NPN VHF/UHF 40V SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 400MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫5,568	40V	400MHz	-	-	300mW	30 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
DSC9F0100L	Panasonic Electronic Components	RF TRANS NPN 10V 1.9GHZ SSMINI3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 1.9GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5mA, 4V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3-B	パッケージ: SC-89, SOT-490	在庫5,808	10V	1.9GHz	-	-	125mW	75 @ 5mA, 4V	50mA	150°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F3-B
PBR941,215	NXP	TRANSISTOR NPN UHF 50MA SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz Gain: - Power - Max: 360mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫3,520	10V	8GHz	1.4dB ~ 2dB @ 1GHz ~ 2GHz	-	360mW	50 @ 5mA, 6V	50mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFU530AR	NXP	TRANS RF NPN 12V 40MA TO-236AB Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 0.6dB @ 900MHz Gain: 18dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V Current - Collector (Ic) (Max): 40mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫108,810	12V	11GHz	0.6dB @ 900MHz	18dB	450mW	60 @ 10mA, 8V	40mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFU520YX	NXP	TRANS RF NPN 12V 30MA 6TSSOP Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 0.65dB @ 900MHz Gain: 19dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫122,184	12V	10GHz	0.65dB @ 900MHz	19dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
2SC5012-A	CEL	RF TRANS NPN 10V 9GHZ SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 15dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: -	パッケージ: -	Request a Quote	10V	9GHz	1.2dB @ 1GHz	15dB	150mW	50 @ 20mA, 8V	65mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	-
MS3455	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NPT1010P	MACOM Technology Solutions	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC4988FRTR-E	Renesas Electronics Corporation	RF 0.1A, NPN Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
42105	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N3495	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 120V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	パッケージ: -	Request a Quote	120V	150MHz	-	-	400mW	40 @ 50mA, 10V	100mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
PH3135-5M	MACOM Technology Solutions	TRANSISTOR,BIPOLAR,5W,3.10-3.50_ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 3.5GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 700mA Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: -	パッケージ: -	Request a Quote	60V	3.5GHz	-	8.5dB	50W	-	700mA	200°C	Chassis Mount	2L-FLG	-
2SC4095-A	CEL	RF TRANS NPN 10V 10GHZ SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: -	パッケージ: -	Request a Quote	10V	10GHz	1.8dB @ 2GHz	12dB	200mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	-
NESG250134-T1-AZ	CEL	TRANS NPN 900MHZ SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9.2V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): - Gain: 23dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: 3-PowerMiniMold	パッケージ: -	Request a Quote	9.2V	10GHz	-	23dB	1.5W	80 @ 100mA, 3V	500mA	-	Surface Mount	TO-243AA	3-PowerMiniMold

BFP650E6327HTSA1

Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain: 10.5dB ~ 21.5dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

パッケージ: SC-82A, SOT-343

在庫3,584

4.5V

37GHz

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

10.5dB ~ 21.5dB

500mW

110 @ 80mA, 3V

150mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFR 181 E6780

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain: 18.5dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫6,592

12V

8GHz

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

18.5dB

175mW

70 @ 5mA, 8V

20mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

MRF559T

Microsemi Corporation

COMM/BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,464

16V

870MHz

-

9.5dB

2W

30 @ 50mA, 10V

150mA

-

MRF323

M/A-Com Technology Solutions

TRANS RF NPN 33V 1.1A 244-04

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 33V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 11dB
Power - Max: 20W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 2.2A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 244-04
Supplier Device Package: 244-04, STYLE 1

パッケージ: 244-04

在庫6,080

33V

-

11dB

20W

20 @ 1A, 5V

2.2A

-

Chassis Mount

244-04

244-04, STYLE 1

MPS5179RLRPG

ON Semiconductor

TRANSISTOR NPN RF BIPO 12V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫7,552

12V

2GHz

-

200W

25 @ 3mA, 1V

50mA

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

NE85630-R25-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

パッケージ: SC-70, SOT-323

在庫3,328

12V

4.5GHz

1.2dB @ 1GHz

9dB

150mW

125 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

KSC1393OTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
Gain: 20dB ~ 24dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫3,136

30V

700MHz

2dB ~ 3dB @ 200MHz

20dB ~ 24dB

250mW

60 @ 2mA, 10V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MBC13900T1

NXP

IC TRANS NPN RF LOW NOISE SC70-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6.5V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
Gain: 15dB ~ 22dB
Power - Max: 188mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

パッケージ: SC-82A, SOT-343

在庫5,200

6.5V

15GHz

0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz

15dB ~ 22dB

188mW

100 @ 5mA, 2V

20mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

BFG591,115

NXP

TRANS NPN 15V 7GHZ SOT-223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

パッケージ: TO-261-4, TO-261AA

在庫4,736

15V

7GHz

-

2W

60 @ 70mA, 8V

200mA

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BFQ 19S E6327

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Gain: 7dB ~ 11.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Current - Collector (Ic) (Max): 210mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PG-SOT89

パッケージ: TO-243AA

在庫7,984

15V

5.5GHz

1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz

7dB ~ 11.5dB

1W

70 @ 70mA, 8V

210mA

150°C (TJ)

Surface Mount

TO-243AA

PG-SOT89

BFP720FH6327XTSA1

Infineon Technologies

TRANS RF NPN 45GHZ 3.5V TSFP-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Gain: 10.5dB ~ 28dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

パッケージ: 4-SMD, Flat Leads

在庫2,400

4.7V

45GHz

0.4dB ~ 1dB @ 150MHz ~ 10GHz

10.5dB ~ 28dB

100mW

160 @ 13mA, 3V

25mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

MS2200

Microsemi Corporation

TRANS RF BIPO 1167W 43.2A MS102

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 400MHz ~ 500MHz
Noise Figure (dB Typ @ f): -
Gain: 9.7dB
Power - Max: 1167W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 43.2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M102
Supplier Device Package: M102

パッケージ: M102

在庫7,408

65V

400MHz ~ 500MHz

-

9.7dB

1167W

20 @ 5A, 5V

43.2A

200°C (TJ)

Chassis Mount

M102

1035MP

Microsemi Corporation

TRANS RF BIPO 125W 2.5A 55FW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB ~ 10.5dB
Power - Max: 125W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Supplier Device Package: 55FW-1

パッケージ: 55FW-1

在庫7,664

65V

1.025GHz ~ 1.15GHz

-

10dB ~ 10.5dB

125W

20 @ 100mA, 5V

2.5A

200°C (TJ)

Chassis Mount

55FW-1

BFU580GX

NXP

TRANS RF NPN 12V 60MA SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
Gain: 10.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

パッケージ: TO-261-4, TO-261AA

在庫5,088

12V

11GHz

1.4dB @ 1.8GHz

10.5dB

1W

60 @ 30mA, 8V

60mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

MMBTH24-7

Diodes Incorporated

TRANS NPN VHF/UHF 40V SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 400MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫5,568

40V

400MHz

-

300mW

30 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

DSC9F0100L

Panasonic Electronic Components

RF TRANS NPN 10V 1.9GHZ SSMINI3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 1.9GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5mA, 4V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B

パッケージ: SC-89, SOT-490

在庫5,808

10V

1.9GHz

-

125mW

75 @ 5mA, 4V

50mA

150°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F3-B

PBR941,215

NXP

TRANSISTOR NPN UHF 50MA SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫3,520

10V

8GHz

1.4dB ~ 2dB @ 1GHz ~ 2GHz

-

360mW

50 @ 5mA, 6V

50mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFU530AR

NXP

TRANS RF NPN 12V 40MA TO-236AB

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
Gain: 18dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫108,810

12V

11GHz

0.6dB @ 900MHz

18dB

450mW

60 @ 10mA, 8V

40mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFU520YX

NXP

TRANS RF NPN 12V 30MA 6TSSOP

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
Gain: 19dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫122,184

12V

10GHz

0.65dB @ 900MHz

19dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

2SC5012-A

CEL

RF TRANS NPN 10V 9GHZ SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 15dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: -

パッケージ: -

Request a Quote

10V

9GHz

1.2dB @ 1GHz

15dB

150mW

50 @ 20mA, 8V

65mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

-

MS3455

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

NPT1010P

MACOM Technology Solutions

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

2SC4988FRTR-E

Renesas Electronics Corporation

RF 0.1A, NPN

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

42105

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

2N3495

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 120V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

パッケージ: -

Request a Quote

120V

150MHz

-

400mW

40 @ 50mA, 10V

100mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

PH3135-5M

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,5W,3.10-3.50_

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 3.5GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 50W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 700mA
Operating Temperature: 200°C
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: -

パッケージ: -

Request a Quote

60V

3.5GHz

-

8.5dB

50W

-

700mA

200°C

Chassis Mount

2L-FLG

-

2SC4095-A

CEL

RF TRANS NPN 10V 10GHZ SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: -

パッケージ: -

Request a Quote

10V

10GHz

1.8dB @ 2GHz

12dB

200mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

-

NESG250134-T1-AZ

CEL

TRANS NPN 900MHZ SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9.2V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): -
Gain: 23dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: 3-PowerMiniMold

パッケージ: -

Request a Quote

9.2V

10GHz

-

23dB

1.5W

80 @ 100mA, 3V

500mA

-

Surface Mount

TO-243AA

3-PowerMiniMold