ページ 36 - トランジスタ - バイポーラ(BJT) - RF | ディスクリート半導体製品 | Heisener Electronics
連絡先
SalesDept@heisener.com 86-755-83210559-841
Language Translation

* Please refer to the English Version as our Official Version.

トランジスタ - バイポーラ(BJT) - RF

レコード 1,633
ページ  36/55
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP405E6433HTMA1
Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 23dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
パッケージ: SC-82A, SOT-343
在庫5,344
5V
25GHz
1.25dB @ 1.8GHz
23dB
75mW
60 @ 5mA, 4V
25mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BF 770A E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain: 9.5dB ~ 14.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫5,072
12V
6GHz
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
9.5dB ~ 14.5dB
300mW
70 @ 30mA, 8V
90mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
2SC4095-T1-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
パッケージ: TO-253-4, TO-253AA
在庫6,352
10V
10GHz
1.8dB @ 2GHz
12dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
hot NE67739-T1-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 14.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
パッケージ: TO-253-4, TO-253AA
在庫7,552
6V
14.5GHz
1.5dB @ 2GHz
12dB
200mW
75 @ 20mA, 3V
50mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
BF240,112
NXP

TRANS NPN 40V 25MA SOT54

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA)
在庫2,640
40V
150MHz
-
-
300mW
67 @ 1mA, 10V
25mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
NE68518-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 11dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
パッケージ: SC-82A, SOT-343
在庫2,032
6V
12GHz
1.5dB @ 2GHz
11dB
150mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
NE68039-T1-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 11dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
パッケージ: TO-253-4, TO-253AA
在庫2,384
10V
10GHz
1.8dB @ 2GHz
11dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
hot NE52418-T1-A
CEL

IC AMP HBT GAAS LN 4-SMINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 2GHz
  • Gain: 14dB ~ 16dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: 4-Super Mini Mold
パッケージ: SC-82A, SOT-343
在庫21,720
5V
-
1dB ~ 1.5dB @ 2GHz
14dB ~ 16dB
150mW
100 @ 3mA, 2V
40mA
125°C (TJ)
Surface Mount
SC-82A, SOT-343
4-Super Mini Mold
MPSH81
Fairchild/ON Semiconductor

TRANSISTOR RF PNP TO-92

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA)
在庫4,288
20V
600MHz
-
-
350mW
60 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
KSC1674YTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫5,328
20V
600MHz
3dB ~ 5dB @ 100MHz
-
250mW
120 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot KSC2755YMTF
Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 0.3dB @ 200MHz
  • Gain: 20dB ~ 23dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 3mA, 10V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫2,052,000
30V
600MHz
0.3dB @ 200MHz
20dB ~ 23dB
150mW
120 @ 3mA, 10V
20mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
BFS17HTC
Diodes Incorporated

TRANSISTOR RF NPN SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Gain: -
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫6,320
15V
1.3GHz
4.5dB @ 500MHz
-
330mW
70 @ 2mA, 1V
25mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
NESG2101M05-A
CEL

TRANS NPN 2GHZ M05

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 17GHz
  • Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
  • Gain: 11dB ~ 19dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: M05
パッケージ: SOT-343F
在庫2,880
5V
17GHz
0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
11dB ~ 19dB
500mW
130 @ 15mA, 2V
100mA
150°C (TJ)
Surface Mount
SOT-343F
M05
hot AT-41511-TR1
Broadcom Limited

IC TRANS NPN GP BIPOLAR SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
  • Gain: 11dB ~ 15.5dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
パッケージ: TO-253-4, TO-253AA
在庫506,136
12V
-
1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
11dB ~ 15.5dB
225mW
30 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
NE85630-T1
CEL

TRANS NPN 1GHZ SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
  • Gain: 6dB ~ 12dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
パッケージ: SC-70, SOT-323
在庫2,416
12V
4.5GHz
1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
6dB ~ 12dB
150mW
40 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
BFS520,135
NXP

TRANS NPN 15V 70MA 9GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
パッケージ: SC-70, SOT-323
在庫6,608
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
300mW
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
BFG540,215
NXP

TRANS RF 15V 9GHZ SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
  • Current - Collector (Ic) (Max): 120mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
パッケージ: TO-253-4, TO-253AA
在庫5,600
15V
9GHz
1.3dB ~ 1.8dB @ 900MHz
-
400mW
60 @ 40mA, 8V
120mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFG67,235
NXP

TRANS RF NPN 8GHZ 10V SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
パッケージ: TO-253-4, TO-253AA
在庫3,104
10V
8GHz
1.3dB ~ 3dB @ 1GHz ~ 2GHz
-
380mW
60 @ 15mA, 5V
50mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
MRF10502
M/A-Com Technology Solutions

TRANS NPN 500W 1025MHZ-1150MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 29A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 355J-02
  • Supplier Device Package: 355J-02, STYLE 1
パッケージ: 355J-02
在庫3,344
65V
-
-
9dB
500W
20 @ 5A, 5V
29A
200°C (TJ)
Chassis Mount
355J-02
355J-02, STYLE 1
MDS150
Microsemi Corporation

TRANS RF BIPO 350W 4A 55AW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
パッケージ: 55AW
在庫3,888
60V
1.03GHz ~ 1.09GHz
-
10dB
350W
20 @ 500mA, 5V
4A
200°C (TJ)
Chassis Mount
55AW
55AW
hot 2N5179
Microsemi Corporation

TRANS RF NPN 12V 50MA TO72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 200MHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
  • Gain: 20dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
パッケージ: TO-206AF, TO-72-4 Metal Can
在庫17,928
12V
200MHz
4.5dB @ 200MHz
20dB
300mW
25 @ 3mA, 1V
50mA
-
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
AT-30511-TR2G
Broadcom Limited

TRANS NPN BIPO 5.5V 8MA SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
  • Gain: 14dB ~ 16dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
  • Current - Collector (Ic) (Max): 8mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
パッケージ: TO-253-4, TO-253AA
在庫7,632
5.5V
-
1.1dB ~ 1.4dB @ 900MHz
14dB ~ 16dB
100mW
70 @ 1mA, 2.7V
8mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
hot AT-32033-TR1G
Broadcom Limited

IC TRANS NPN BIPOLAR SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
  • Gain: 11dB ~ 12.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
  • Current - Collector (Ic) (Max): 32mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫2,128,416
5.5V
-
1dB ~ 1.3dB @ 900MHz
11dB ~ 12.5dB
200mW
70 @ 2mA, 2.7V
32mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
SMMBTH10-4LT3G
ON Semiconductor

TRANS NPN VHF/UHF SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫3,488
25V
800MHz
-
-
225mW
120 @ 4mA, 10V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
BFU530WX
NXP

TRANS RF NPN 12V 40MA SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 18.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
パッケージ: SC-70, SOT-323
在庫6,496
12V
11GHz
0.6dB @ 900MHz
18.5dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
NE696M01-T1
CEL

TRANS NPN 2GHZ SOT-363

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.6dB @ 2GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫73,554
6V
14GHz
1.6dB @ 2GHz
-
150mW
80 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot 2SC4215-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
  • Gain: 17dB ~ 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
パッケージ: SC-70, SOT-323
在庫13,080
30V
550MHz
2dB ~ 5dB @ 100MHz
17dB ~ 23dB
100mW
100 @ 1mA, 6V
20mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
hot LM3046M/NOPB
Texas Instruments

IC TRANSISTOR ARRAY 14-SOIC

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.25dB @ 1kHz
  • Gain: -
  • Power - Max: 750mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
パッケージ: 14-SOIC (0.154", 3.90mm Width)
在庫5,584
15V
-
3.25dB @ 1kHz
-
750mW
40 @ 1mA, 3V
50mA
-40°C ~ 85°C (TA)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
PH2729-110M
MACOM Technology Solutions

TRANSISTOR,110W,2.7-2.9GHZ,100US

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 63V
  • Frequency - Transition: 2.7GHz ~ 2.9GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.8dB
  • Power - Max: 330W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: 2L-FLG
パッケージ: -
Request a Quote
63V
2.7GHz ~ 2.9GHz
-
6.8dB
330W
-
8A
200°C (TJ)
Chassis Mount
2L-FLG
2L-FLG
SD1332-05C
Microsemi Corporation

RF TRANS NPN 15V 5.5GHZ M150

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 1GHz
  • Gain: 17dB
  • Power - Max: 180W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 14mA, 10V
  • Current - Collector (Ic) (Max): 30A
  • Operating Temperature: 200°C
  • Mounting Type: Surface Mount
  • Package / Case: M150
  • Supplier Device Package: M150
パッケージ: -
Request a Quote
15V
5.5GHz
2.5dB @ 1GHz
17dB
180W
50 @ 14mA, 10V
30A
200°C
Surface Mount
M150
M150