ページ 42 - トランジスタ - バイポーラ(BJT) - RF | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - バイポーラ(BJT) - RF

レコード 1,249
ページ  42/42
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部品番号
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パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR 193W E6327
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
パッケージ: SC-70, SOT-323
在庫3,952
12V
8GHz
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
10.5dB ~ 16dB
580mW
70 @ 30mA, 8V
80mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
JAN2N4957
Microsemi Corporation

TRANS PNP 30V 30MA TO72

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
パッケージ: TO-72-3 Metal Can
在庫2,592
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
hot 2SC5012-T1-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 15dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
パッケージ: SC-82A, SOT-343
在庫229,320
10V
9GHz
1.2dB @ 1GHz
15dB
150mW
50 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
NE85633-T1B-R23-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫2,768
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot MCH4020-TL-E
ON Semiconductor

TRANS NPN 8V 150MA MCPH4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 16GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17.5dB
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-MCPH
パッケージ: 4-SMD, Flat Leads
在庫207,696
8V
16GHz
1.2dB @ 1GHz
17.5dB
400mW
60 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-MCPH
hot AT-42035G
Broadcom Limited

TRANS NPN BIPO 12V 80MA 35-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz
  • Gain: 10dB ~ 13.5dB
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD (35 micro-X)
  • Supplier Device Package: 35 micro-X
パッケージ: 4-SMD (35 micro-X)
在庫9,492
12V
8GHz
2dB ~ 3dB @ 2GHz ~ 4GHz
10dB ~ 13.5dB
600mW
30 @ 35mA, 8V
80mA
150°C (TJ)
Surface Mount
4-SMD (35 micro-X)
35 micro-X
UPA810T-T1-A
CEL

RF DUAL TRANSISTORS NPN SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫3,952
12V
4.5GHz
1.2dB @ 1GHz
9dB
200mW
70 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
NE68130-T1
CEL

TRANS NPN 1GHZ SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 1.6dB @ 1GHz ~ 2GHz
  • Gain: 9dB ~ 13.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
パッケージ: SC-70, SOT-323
在庫7,056
10V
7GHz
1.5dB ~ 1.6dB @ 1GHz ~ 2GHz
9dB ~ 13.5dB
150mW
40 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
PRF957,115
NXP

TRANSISTOR SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 270mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
パッケージ: SC-70, SOT-323
在庫2,240
10V
8.5GHz
1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
-
270mW
50 @ 5mA, 6V
100mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
MSC1175M
Microsemi Corporation

TRANS RF BIPO 400W 12A M218

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 400W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M218
  • Supplier Device Package: M218
パッケージ: M218
在庫2,992
65V
1.025GHz ~ 1.15GHz
-
8dB
400W
15 @ 1A, 5V
12A
250°C (TJ)
Chassis Mount
M218
M218
SD1224
Microsemi Corporation

TRANS RF BIPO 60W 5A M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.6dB
  • Power - Max: 60W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M135
  • Supplier Device Package: M135
パッケージ: M135
在庫5,328
35V
175MHz
-
7.6dB
60W
20 @ 500mA, 5V
5A
200°C (TJ)
Chassis Mount
M135
M135
MPSH81
Fairchild/Micross Components

DIE TRANSISTOR RF PNP

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,992
-
-
-
-
-
-
-
-
-
-
-
hot HFA3135IHZ96
Intersil

IC TRANS ARRAY PNP MATCH SOT23-6

  • Transistor Type: 2 PNP (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 5.2dB @ 900MHz
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 26mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
パッケージ: SOT-23-6
在庫5,040
9V
7GHz
5.2dB @ 900MHz
-
-
15 @ 10mA, 2V
26mA
150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
2SC5646A-TL-H
ON Semiconductor

TRANS NPN BIPO 30MA 4V SSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4V
  • Frequency - Transition: 10GHz ~ 12.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 9.5dB ~ 10.5dB @ 2GHz
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-81
  • Supplier Device Package: 3-SSFP
パッケージ: SC-81
在庫2,704
4V
10GHz ~ 12.5GHz
1.5dB @ 2GHz
9.5dB ~ 10.5dB @ 2GHz
100mW
100 @ 5mA, 1V
30mA
150°C (TJ)
Surface Mount
SC-81
3-SSFP
BFP193WH6327XTSA1
Infineon Technologies

TRANS RF NPN 12V 80MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain: 13.5dB ~ 20.5dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
パッケージ: SC-82A, SOT-343
在庫5,088
12V
8GHz
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
13.5dB ~ 20.5dB
580mW
70 @ 30mA, 8V
80mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFU790F,115
NXP

TRANSISTOR NPN SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
  • Gain: -
  • Power - Max: 234mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 235 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
パッケージ: SOT-343F
在庫5,184
2.8V
25GHz
0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
-
234mW
235 @ 10mA, 2V
100mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
PN3563
Central Semiconductor Corp

TRANSISTOR NPN RF OSC TO92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
パッケージ: TO-226-3, TO-92-3 (TO-226AA)
在庫19,740
12V
-
-
-
-
-
-
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
hot KST10MTF
Fairchild/ON Semiconductor

TRANS NPN 25V 350MW SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫533,760
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MAX2601ESA+
Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫9,840
15V
1GHz
3.3dB @ 836MHz
11.6dB
6.4W
100 @ 250mA, 3V
1.2A
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP