ページ 198 - トランジスタ - FET、MOSFET - アレイ | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7325PBF	Infineon Technologies	MOSFET 2P-CH 12V 7.8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,888	Logic Level Gate	12V	7.8A	24 mOhm @ 7.8A, 4.5V	900mV @ 250µA	33nC @ 4.5V	2020pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7752	Infineon Technologies	MOSFET 2N-CH 30V 4.6A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫2,480	Logic Level Gate	30V	4.6A	30 mOhm @ 4.6A, 10V	2V @ 250µA	9nC @ 4.5V	861pF @ 25V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
TMC1420-LA	Trinamic Motion Control GmbH	MOSFET N/P-CH 40V 8PQFN FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.8A, 7.3A Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V Power - Max: 3.57W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PQFN (5x6)	パッケージ: 8-PowerTDFN	在庫7,120	Standard	40V	8.8A, 7.3A	26.5 mOhm @ 7A, 10V	3V @ 250µA	11.2nC @ 4.5V	1050pF @ 15V	3.57W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (5x6)
SI4818DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 5.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A, 7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W, 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫3,472	Logic Level Gate	30V	5.3A, 7A	22 mOhm @ 6.3A, 10V	800mV @ 250µA (Min)	12nC @ 5V	-	1W, 1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1903DL-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 0.41A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 410mA Rds On (Max) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫252,012	Logic Level Gate	20V	410mA	995 mOhm @ 410mA, 4.5V	1.5V @ 250µA	1.8nC @ 4.5V	-	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
APTM20DUM10TG	Microsemi Corporation	MOSFET 2N-CH 200V 175A SP4 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	パッケージ: SP4	在庫4,592	Standard	200V	175A	12 mOhm @ 87.5A, 10V	5V @ 5mA	224nC @ 10V	13700pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM20DHM10G	Microsemi Corporation	MOSFET 2N-CH 200V 175A SP6 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫3,920	Standard	200V	175A	12 mOhm @ 87.5A, 10V	5V @ 5mA	224nC @ 10V	13700pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
PMWD15UN,518	NXP	MOSFET 2N-CH 20V 11.6A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11.6A Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V Power - Max: 4.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫3,008	Logic Level Gate	20V	11.6A	18.5 mOhm @ 5A, 4.5V	700mV @ 1mA	22.2nC @ 4.5V	1450pF @ 16V	4.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IPG20N04S412AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Power - Max: 41W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	パッケージ: 8-PowerVDFN	在庫6,432	Standard	40V	20A	12.2 mOhm @ 17A, 10V	4V @ 15µA	18nC @ 10V	1470pF @ 25V	41W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
APTC60AM45B1G	Microsemi Corporation	MOSFET 3N-CH 600V 49A SP1 FET Type: 3 N Channel (Phase Leg + Boost Chopper) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	パッケージ: SP1	在庫4,752	Standard	600V	49A	45 mOhm @ 24.5A, 10V	3.9V @ 3mA	150nC @ 10V	7200pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
GWM180-004X2-SMD	IXYS	MOSFET 6N-CH 40V 180A 17-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL?	パッケージ: 17-SMD, Gull Wing	在庫6,064	Standard	40V	180A	2.5 mOhm @ 100A, 10V	4.5V @ 1mA	110nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Gull Wing	ISOPLUS-DIL?
SP8K24FU6TB	Rohm Semiconductor	MOSFET 2N-CH 45V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫2,784	Logic Level Gate	45V	6A	25 mOhm @ 6A, 10V	2.5V @ 1mA	21.6nC @ 5V	1400pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMC3028LSDX-13	Diodes Incorporated	MOSFET N/P-CH 30V 5.5A/5.8A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,664	Logic Level Gate	30V	5.5A, 5.8A	27 mOhm @ 6A, 10V	3V @ 250µA	13.2nC @ 10V	641pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC2400UV-13	Diodes Incorporated	MOSFET N/P-CH 20V SOT563 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	パッケージ: SOT-563, SOT-666	在庫2,896	Standard	20V	1.03A, 700mA	480 mOhm @ 200mA, 5V	900mV @ 250µA	0.5nC @ 4.5V	37.1pF @ 10V	450mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NX138AKSF	Nexperia USA Inc.	NX138AKS/SOT363/SC-88 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,400	-	-	-	-	-	-	-	-	-	-	-	-
SI7540ADP-T1-GE3	Vishay Siliconix	MOSFET N/P-CH POWERPAK8 FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A, 9A Rds On (Max) @ Id, Vgs: 28 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V Power - Max: 3.5W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	パッケージ: PowerPAK? SO-8 Dual	在庫6,576	-	20V	12A, 9A	28 mOhm @ 12A, 10V	1.4V @ 250µA	48nC @ 10V	1310pF @ 10V	3.5W	-55°C ~ 150°C	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SIA928DJ-T1-GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 30V SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	パッケージ: PowerPAK? SC-70-6 Dual	在庫4,768	Standard	30V	4.5A (Tc)	25 mOhm @ 5A, 10V	2.2V @ 250µA	4.5nC @ 4.5V	490pF @ 15V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
DMC2038LVT-7	Diodes Incorporated	MOSFET N/P-CH 20V TSOT26 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	パッケージ: SOT-23-6 Thin, TSOT-23-6	在庫30,000	Logic Level Gate	20V	3.7A, 2.6A	35 mOhm @ 4A, 4.5V	1V @ 250µA	17nC @ 10V	530pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
IPG20N04S408ATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A TDSON-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	パッケージ: 8-PowerVDFN	在庫45,006	Standard	40V	20A	7.6 mOhm @ 17A, 10V	4V @ 30µA	36nC @ 10V	2940pF @ 25V	65W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
FDS4935BZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 6.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫59,400	Logic Level Gate	30V	6.9A	22 mOhm @ 6.9A, 10V	3V @ 250µA	40nC @ 10V	1360pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMG4822SSDQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 10A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Power - Max: 1.42W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: -	在庫44,619	-	30V	10A (Ta)	21mOhm @ 8.5A, 10V	3V @ 250µA	5nC @ 4.5V	478.9pF @ 16V	1.42W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ504EP-T1_BE3	Vishay Siliconix	MOSFET N/P-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	パッケージ: -	在庫26,688	-	40V	30A (Tc)	7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V	2.5V @ 250µA	30nC @ 10V, 85nC @ 10V	1900pF @ 25V, 4600pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
AON3820	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 24V 8A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1325pF @ 12V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (3x3)	パッケージ: -	Request a Quote	-	24V	8A (Ta)	8.9mOhm @ 8A, 4.5V	1.3V @ 250µA	20nC @ 4.5V	1325pF @ 12V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (3x3)
CAB650M17HM3	Wolfspeed, Inc.	SIC 2N-CH 1700V 916A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 916A (Tc) Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V Vgs(th) (Max) @ Id: 3.6V @ 305mA Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: -	在庫3	-	1700V (1.7kV)	916A (Tc)	1.86mOhm @ 650A, 15V	3.6V @ 305mA	2988nC @ 15V	97300pF @ 1200V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
DMTH45M5LPDWQ-13	Diodes Incorporated	MOSFET 2N-CH 40V 79A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V Power - Max: 3W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	パッケージ: -	在庫1,815	-	40V	79A (Tc)	5.5mOhm @ 25A, 10V	2.3V @ 250µA	13.9nC @ 10V	978pF @ 20V	3W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
SQJB46ELP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	パッケージ: -	在庫2,190	-	40V	30A (Tc)	8mOhm @ 8A, 10V	2.2V @ 250µA	40nC @ 10V	2100pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
DMC2053UFDBQ-13	Diodes Incorporated	MOSFET N/P-CH 20V 4.6A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Power - Max: 820mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	パッケージ: -	Request a Quote	-	20V	4.6A (Ta), 3.1A (Ta)	35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V	1V @ 250µA	7.7nC @ 10V, 12.7nC @ 8V	369pF @ 10V, 440pF @ 10V	820mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
NVMJD015N04CLTWG	onsemi	MOSFET N-CH 40V LFPAK56 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

IRF7325PBF

Infineon Technologies

MOSFET 2P-CH 12V 7.8A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,888

Logic Level Gate

12V

7.8A

24 mOhm @ 7.8A, 4.5V

900mV @ 250µA

33nC @ 4.5V

2020pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7752

Infineon Technologies

MOSFET 2N-CH 30V 4.6A 8-TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫2,480

Logic Level Gate

30V

4.6A

30 mOhm @ 4.6A, 10V

2V @ 250µA

9nC @ 4.5V

861pF @ 25V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

TMC1420-LA

Trinamic Motion Control GmbH

MOSFET N/P-CH 40V 8PQFN

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.8A, 7.3A
Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Power - Max: 3.57W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PQFN (5x6)

パッケージ: 8-PowerTDFN

在庫7,120

Standard

40V

8.8A, 7.3A

26.5 mOhm @ 7A, 10V

3V @ 250µA

11.2nC @ 4.5V

1050pF @ 15V

3.57W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PQFN (5x6)

SI4818DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 5.3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫3,472

Logic Level Gate

30V

5.3A, 7A

22 mOhm @ 6.3A, 10V

800mV @ 250µA (Min)

12nC @ 5V

-

1W, 1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1903DL-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 0.41A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 410mA
Rds On (Max) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫252,012

Logic Level Gate

20V

410mA

995 mOhm @ 410mA, 4.5V

1.5V @ 250µA

1.8nC @ 4.5V

-

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

APTM20DUM10TG

Microsemi Corporation

MOSFET 2N-CH 200V 175A SP4

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

パッケージ: SP4

在庫4,592

Standard

200V

175A

12 mOhm @ 87.5A, 10V

5V @ 5mA

224nC @ 10V

13700pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTM20DHM10G

Microsemi Corporation

MOSFET 2N-CH 200V 175A SP6

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫3,920

Standard

200V

175A

12 mOhm @ 87.5A, 10V

5V @ 5mA

224nC @ 10V

13700pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

PMWD15UN,518

NXP

MOSFET 2N-CH 20V 11.6A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A
Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V
Power - Max: 4.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫3,008

Logic Level Gate

20V

11.6A

18.5 mOhm @ 5A, 4.5V

700mV @ 1mA

22.2nC @ 4.5V

1450pF @ 16V

4.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IPG20N04S412AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Power - Max: 41W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

パッケージ: 8-PowerVDFN

在庫6,432

Standard

40V

20A

12.2 mOhm @ 17A, 10V

4V @ 15µA

18nC @ 10V

1470pF @ 25V

41W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

APTC60AM45B1G

Microsemi Corporation

MOSFET 3N-CH 600V 49A SP1

FET Type: 3 N Channel (Phase Leg + Boost Chopper)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

パッケージ: SP1

在庫4,752

Standard

600V

49A

45 mOhm @ 24.5A, 10V

3.9V @ 3mA

150nC @ 10V

7200pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

GWM180-004X2-SMD

IXYS

MOSFET 6N-CH 40V 180A 17-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL?

パッケージ: 17-SMD, Gull Wing

在庫6,064

Standard

40V

180A

2.5 mOhm @ 100A, 10V

4.5V @ 1mA

110nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Gull Wing

ISOPLUS-DIL?

SP8K24FU6TB

Rohm Semiconductor

MOSFET 2N-CH 45V 6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫2,784

Logic Level Gate

45V

6A

25 mOhm @ 6A, 10V

2.5V @ 1mA

21.6nC @ 5V

1400pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMC3028LSDX-13

Diodes Incorporated

MOSFET N/P-CH 30V 5.5A/5.8A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,664

Logic Level Gate

30V

5.5A, 5.8A

27 mOhm @ 6A, 10V

3V @ 250µA

13.2nC @ 10V

641pF @ 15V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC2400UV-13

Diodes Incorporated

MOSFET N/P-CH 20V SOT563

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Power - Max: 450mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

パッケージ: SOT-563, SOT-666

在庫2,896

Standard

20V

1.03A, 700mA

480 mOhm @ 200mA, 5V

900mV @ 250µA

0.5nC @ 4.5V

37.1pF @ 10V

450mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NX138AKSF

Nexperia USA Inc.

NX138AKS/SOT363/SC-88

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,400

-

SI7540ADP-T1-GE3

Vishay Siliconix

MOSFET N/P-CH POWERPAK8

FET Type: N and P-Channel
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A, 9A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V
Power - Max: 3.5W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

パッケージ: PowerPAK? SO-8 Dual

在庫6,576

-

20V

12A, 9A

28 mOhm @ 12A, 10V

1.4V @ 250µA

48nC @ 10V

1310pF @ 10V

3.5W

-55°C ~ 150°C

Surface Mount

PowerPAK? SO-8 Dual

SIA928DJ-T1-GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 30V SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

パッケージ: PowerPAK? SC-70-6 Dual

在庫4,768

Standard

30V

4.5A (Tc)

25 mOhm @ 5A, 10V

2.2V @ 250µA

4.5nC @ 4.5V

490pF @ 15V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

DMC2038LVT-7

Diodes Incorporated

MOSFET N/P-CH 20V TSOT26

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

パッケージ: SOT-23-6 Thin, TSOT-23-6

在庫30,000

Logic Level Gate

20V

3.7A, 2.6A

35 mOhm @ 4A, 4.5V

1V @ 250µA

17nC @ 10V

530pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

IPG20N04S408ATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A TDSON-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Power - Max: 65W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

パッケージ: 8-PowerVDFN

在庫45,006

Standard

40V

20A

7.6 mOhm @ 17A, 10V

4V @ 30µA

36nC @ 10V

2940pF @ 25V

65W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

FDS4935BZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 6.9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫59,400

Logic Level Gate

30V

6.9A

22 mOhm @ 6.9A, 10V

3V @ 250µA

40nC @ 10V

1360pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMG4822SSDQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 10A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Power - Max: 1.42W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: -

在庫44,619

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30V

10A (Ta)

21mOhm @ 8.5A, 10V

3V @ 250µA

5nC @ 4.5V

478.9pF @ 16V

1.42W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQJ504EP-T1_BE3

Vishay Siliconix

MOSFET N/P-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

パッケージ: -

在庫26,688

-

40V

30A (Tc)

7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V

2.5V @ 250µA

30nC @ 10V, 85nC @ 10V

1900pF @ 25V, 4600pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

AON3820

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 24V 8A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1325pF @ 12V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (3x3)

パッケージ: -

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24V

8A (Ta)

8.9mOhm @ 8A, 4.5V

1.3V @ 250µA

20nC @ 4.5V

1325pF @ 12V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (3x3)

CAB650M17HM3

Wolfspeed, Inc.

SIC 2N-CH 1700V 916A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 916A (Tc)
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 305mA
Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: -

在庫3

-

1700V (1.7kV)

916A (Tc)

1.86mOhm @ 650A, 15V

3.6V @ 305mA

2988nC @ 15V

97300pF @ 1200V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

DMTH45M5LPDWQ-13

Diodes Incorporated

MOSFET 2N-CH 40V 79A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Power - Max: 3W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

パッケージ: -

在庫1,815

-

40V

79A (Tc)

5.5mOhm @ 25A, 10V

2.3V @ 250µA

13.9nC @ 10V

978pF @ 20V

3W (Ta), 60W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

SQJB46ELP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

パッケージ: -

在庫2,190

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40V

30A (Tc)

8mOhm @ 8A, 10V

2.2V @ 250µA

40nC @ 10V

2100pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

DMC2053UFDBQ-13

Diodes Incorporated

MOSFET N/P-CH 20V 4.6A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
Power - Max: 820mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

パッケージ: -

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-

20V

4.6A (Ta), 3.1A (Ta)

35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V

1V @ 250µA

7.7nC @ 10V, 12.7nC @ 8V

369pF @ 10V, 440pF @ 10V

820mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

NVMJD015N04CLTWG

onsemi

MOSFET N-CH 40V LFPAK56

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-