ページ 5 - トランジスタ - FET、MOSFET - アレイ | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AON4807_101	Alpha & Omega Semiconductor Inc.	MOSFET P-CH DUAL DFN FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (3x2)	パッケージ: 8-VDFN Exposed Pad	在庫5,744	Standard	30V	4A	68 mOhm @ 4A, 10V	2.3V @ 250µA	10nC @ 10V	290pF @ 15V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (3x2)
AON3816_101	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 4A 8-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (3x3)	パッケージ: 8-SMD, Flat Lead	在庫5,968	Logic Level Gate	20V	-	22 mOhm @ 4A, 4.5V	1.1V @ 250µA	13nC @ 4.5V	1100pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (3x3)
AO4803AL	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 5A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 46 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,424	Logic Level Gate	30V	5A	46 mOhm @ 5A, 10V	2.5V @ 250µA	11nC @ 10V	520pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
EFC4618R-TR	ON Semiconductor	MOSFET 2N-CH EFCP1818 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XBGA, 4-FCBGA Supplier Device Package: EFCP1818-4CC-037	パッケージ: 4-XBGA, 4-FCBGA	在庫65,568	Standard	-	-	-	-	-	-	1.6W	150°C (TJ)	Surface Mount	4-XBGA, 4-FCBGA	EFCP1818-4CC-037
NTHD2102PT1G	ON Semiconductor	MOSFET 2P-CH 8V 3.4A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	パッケージ: 8-SMD, Flat Lead	在庫1,996,464	Logic Level Gate	8V	3.4A	58 mOhm @ 3.4A, 4.5V	1.5V @ 250µA	16nC @ 2.5V	715pF @ 6.4V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
APTM120DU29TG	Microsemi Corporation	MOSFET 2N-CH 1200V 34A SP4 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 34A Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	パッケージ: SP4	在庫2,368	Standard	1200V (1.2kV)	34A	348 mOhm @ 17A, 10V	5V @ 5mA	374nC @ 10V	10300pF @ 25V	780W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTC60DSKM70T3G	Microsemi Corporation	MOSFET 2N-CH 600V 39A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	パッケージ: SP3	在庫2,816	Standard	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SI4501ADY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 8V Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫131,952	Logic Level Gate	30V, 8V	6.3A, 4.1A	18 mOhm @ 8.8A, 10V	1.8V @ 250µA	20nC @ 5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDZ2553N	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 9.6A BGA FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.6A Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1299pF @ 10V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 18-WFBGA Supplier Device Package: 18-BGA (2.5x4)	パッケージ: 18-WFBGA	在庫4,848	Logic Level Gate	20V	9.6A	14 mOhm @ 9.6A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	1299pF @ 10V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	18-WFBGA	18-BGA (2.5x4)
FDG6302P	Fairchild/ON Semiconductor	MOSFET 2P-CH 25V 0.14A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 140mA Rds On (Max) @ Id, Vgs: 10 Ohm @ 140mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫450,276	Logic Level Gate	25V	140mA	10 Ohm @ 140mA, 4.5V	1.5V @ 250µA	0.31nC @ 4.5V	12pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
NDS8947	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫92,136	Logic Level Gate	30V	4A	65 mOhm @ 4A, 10V	2.8V @ 250µA	30nC @ 10V	690pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IPG20N06S2L50ATMA1	Infineon Technologies	MOSFET 2N-CH 55V 20A TDSON-8-4 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 19µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power - Max: 51W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	パッケージ: 8-PowerVDFN	在庫5,696	Logic Level Gate	55V	20A	50 mOhm @ 15A, 10V	2V @ 19µA	17nC @ 10V	560pF @ 25V	51W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
IRF7306PBF	Infineon Technologies	MOSFET 2P-CH 30V 3.6A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫5,664	Logic Level Gate	30V	3.6A	100 mOhm @ 1.8A, 10V	1V @ 250µA	25nC @ 10V	440pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM100AM90FG	Microsemi Corporation	MOSFET 2N-CH 1000V 78A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 78A Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫5,520	Standard	1000V (1kV)	78A	105 mOhm @ 39A, 10V	5V @ 10mA	744nC @ 10V	20700pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTC60VDAM45T1G	Microsemi Corporation	MOSFET 2N-CH 600V 49A SP1 FET Type: 2 N-Channel (Dual) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	パッケージ: SP1	在庫3,568	Super Junction	600V	49A	45 mOhm @ 24.5A, 10V	3.9V @ 3mA	150nC @ 10V	7200pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTC60DDAM45T1G	Microsemi Corporation	MOSFET 2N-CH 600V 49A SP1 FET Type: 2 N Channel (Dual Buck Chopper) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	パッケージ: SP1	在庫7,760	Super Junction	600V	49A	45 mOhm @ 24.5A, 10V	3.9V @ 3mA	150nC @ 10V	7200pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
ALD210808PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	パッケージ: 16-DIP (0.300", 7.62mm)	在庫6,816	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
NVMFD5483NLT3G	ON Semiconductor	MOSFET 2N-CH 60V 6.4A 8DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V Power - Max: 3.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	パッケージ: 8-PowerTDFN	在庫4,544	Logic Level Gate	60V	6.4A	36 mOhm @ 15A, 10V	2.5V @ 250µA	23.4nC @ 10V	668pF @ 25V	3.1W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
EFC6612R-A-TF	ON Semiconductor	MOSFET 2N-CH 20V 23A EFCP FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.5W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-CSP (1.77x3.54)	パッケージ: 6-SMD, No Lead	在庫3,040	Logic Level Gate, 2.5V Drive	-	-	-	-	27nC @ 4.5V	-	2.5W	-	Surface Mount	6-SMD, No Lead	6-CSP (1.77x3.54)
FC8V33030L	Panasonic Electronic Components	MOSFET 2N-CH 33V 6.5A WMINI8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 20 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 480µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: WMini8-F1	パッケージ: 8-SMD, Flat Lead	在庫82,764	Logic Level Gate	33V	6.5A	20 mOhm @ 3.3A, 10V	2.5V @ 480µA	3.8nC @ 4.5V	360pF @ 10V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	WMini8-F1
AO8808A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 7.9A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫464,124	Logic Level Gate	20V	-	14 mOhm @ 8A, 10V	1V @ 250µA	17.9nC @ 4.5V	1810pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
DI9942T	Diodes Incorporated	MOSFET N/P-CH 20V 2.5A 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,264	Standard	20V	2.5A	-	-	-	-	1.6W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
APTC60HM35T3G	Microsemi Corporation	MOSFET 4N-CH 600V 72A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Power - Max: 416W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	パッケージ: SP3	在庫6,928	Standard	600V	72A	35 mOhm @ 72A, 10V	3.9V @ 5.4mA	518nC @ 10V	14000pF @ 25V	416W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
BSM080D12P2C008	Rohm Semiconductor	SIC POWER MODULE-1200V-80A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 80A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 13.2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Power - Max: 600W Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: Module	在庫7,440	Standard	1200V (1.2kV)	80A	-	4V @ 13.2mA	-	800pF @ 10V	600W	175°C (TJ)	Chassis Mount	Module	Module
ZXMHC10A07T8TA	Diodes Incorporated	MOSFET 2N/2P-CH 100V 1A/0.8A SM8 FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A, 800mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	パッケージ: SOT-223-8	在庫28,740	Standard	100V	1A, 800mA	700 mOhm @ 1.5A, 10V	4V @ 250µA	2.9nC @ 10V	138pF @ 60V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
STS8C5H30L	STMicroelectronics	MOSFET N/P-CH 30V 8A/5.4A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫337,980	Logic Level Gate	30V	8A, 5.4A	22 mOhm @ 4A, 10V	1V @ 250µA	10nC @ 5V	857pF @ 25V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
QS6J11TR	Rohm Semiconductor	MOSFET 2P-CH 12V 2A TSMT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V Power - Max: 600mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSMT6 (SC-95)	パッケージ: SOT-23-6 Thin, TSOT-23-6	在庫464,472	Logic Level Gate	12V	2A	105 mOhm @ 2A, 4.5V	1V @ 1mA	6.5nC @ 4.5V	770pF @ 6V	600mW	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSMT6 (SC-95)
APTM50AM24SG	Microsemi Corporation	MOSFET 2N-CH 500V 150A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫6,024	Standard	500V	150A	28 mOhm @ 75A, 10V	5V @ 6mA	434nC @ 10V	19600pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
SI4936BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 6.9A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V Power - Max: 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫834,072	Logic Level Gate	30V	6.9A	35 mOhm @ 5.9A, 10V	3V @ 250µA	15nC @ 10V	530pF @ 15V	2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMA2002NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 2.9A 6-MICROFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 123 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Power - Max: 650mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	パッケージ: 6-VDFN Exposed Pad	在庫1,212,000	Logic Level Gate	30V	2.9A	123 mOhm @ 2.9A, 4.5V	1.5V @ 250µA	3nC @ 4.5V	220pF @ 15V	650mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)

AON4807_101

Alpha & Omega Semiconductor Inc.

MOSFET P-CH DUAL DFN

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (3x2)

パッケージ: 8-VDFN Exposed Pad

在庫5,744

Standard

30V

4A

68 mOhm @ 4A, 10V

2.3V @ 250µA

10nC @ 10V

290pF @ 15V

1.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-DFN (3x2)

AON3816_101

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4A 8-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (3x3)

パッケージ: 8-SMD, Flat Lead

在庫5,968

Logic Level Gate

20V

-

22 mOhm @ 4A, 4.5V

1.1V @ 250µA

13nC @ 4.5V

1100pF @ 10V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (3x3)

AO4803AL

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 46 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,424

Logic Level Gate

30V

5A

46 mOhm @ 5A, 10V

2.5V @ 250µA

11nC @ 10V

520pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

EFC4618R-TR

ON Semiconductor

MOSFET 2N-CH EFCP1818

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XBGA, 4-FCBGA
Supplier Device Package: EFCP1818-4CC-037

パッケージ: 4-XBGA, 4-FCBGA

在庫65,568

Standard

-

1.6W

150°C (TJ)

Surface Mount

4-XBGA, 4-FCBGA

EFCP1818-4CC-037

NTHD2102PT1G

ON Semiconductor

MOSFET 2P-CH 8V 3.4A CHIPFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

パッケージ: 8-SMD, Flat Lead

在庫1,996,464

Logic Level Gate

8V

3.4A

58 mOhm @ 3.4A, 4.5V

1.5V @ 250µA

16nC @ 2.5V

715pF @ 6.4V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

APTM120DU29TG

Microsemi Corporation

MOSFET 2N-CH 1200V 34A SP4

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 34A
Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Power - Max: 780W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

パッケージ: SP4

在庫2,368

Standard

1200V (1.2kV)

34A

348 mOhm @ 17A, 10V

5V @ 5mA

374nC @ 10V

10300pF @ 25V

780W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTC60DSKM70T3G

Microsemi Corporation

MOSFET 2N-CH 600V 39A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

パッケージ: SP3

在庫2,816

Standard

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

SI4501ADY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V/8V 8SOIC

FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫131,952

Logic Level Gate

30V, 8V

6.3A, 4.1A

18 mOhm @ 8.8A, 10V

1.8V @ 250µA

20nC @ 5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDZ2553N

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 9.6A BGA

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.6A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1299pF @ 10V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-WFBGA
Supplier Device Package: 18-BGA (2.5x4)

パッケージ: 18-WFBGA

在庫4,848

Logic Level Gate

20V

9.6A

14 mOhm @ 9.6A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

1299pF @ 10V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

18-WFBGA

18-BGA (2.5x4)

FDG6302P

Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.14A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 140mA
Rds On (Max) @ Id, Vgs: 10 Ohm @ 140mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫450,276

Logic Level Gate

25V

140mA

10 Ohm @ 140mA, 4.5V

1.5V @ 250µA

0.31nC @ 4.5V

12pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

NDS8947

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫92,136

Logic Level Gate

30V

4A

65 mOhm @ 4A, 10V

2.8V @ 250µA

30nC @ 10V

690pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IPG20N06S2L50ATMA1

Infineon Technologies

MOSFET 2N-CH 55V 20A TDSON-8-4

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 19µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Power - Max: 51W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

パッケージ: 8-PowerVDFN

在庫5,696

Logic Level Gate

55V

20A

50 mOhm @ 15A, 10V

2V @ 19µA

17nC @ 10V

560pF @ 25V

51W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

IRF7306PBF

Infineon Technologies

MOSFET 2P-CH 30V 3.6A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫5,664

Logic Level Gate

30V

3.6A

100 mOhm @ 1.8A, 10V

1V @ 250µA

25nC @ 10V

440pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM100AM90FG

Microsemi Corporation

MOSFET 2N-CH 1000V 78A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫5,520

Standard

1000V (1kV)

78A

105 mOhm @ 39A, 10V

5V @ 10mA

744nC @ 10V

20700pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTC60VDAM45T1G

Microsemi Corporation

MOSFET 2N-CH 600V 49A SP1

FET Type: 2 N-Channel (Dual)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

パッケージ: SP1

在庫3,568

Super Junction

600V

49A

45 mOhm @ 24.5A, 10V

3.9V @ 3mA

150nC @ 10V

7200pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTC60DDAM45T1G

Microsemi Corporation

MOSFET 2N-CH 600V 49A SP1

FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

パッケージ: SP1

在庫7,760

Super Junction

600V

49A

45 mOhm @ 24.5A, 10V

3.9V @ 3mA

150nC @ 10V

7200pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

ALD210808PCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

パッケージ: 16-DIP (0.300", 7.62mm)

在庫6,816

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

NVMFD5483NLT3G

ON Semiconductor

MOSFET 2N-CH 60V 6.4A 8DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

パッケージ: 8-PowerTDFN

在庫4,544

Logic Level Gate

60V

6.4A

36 mOhm @ 15A, 10V

2.5V @ 250µA

23.4nC @ 10V

668pF @ 25V

3.1W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

EFC6612R-A-TF

ON Semiconductor

MOSFET 2N-CH 20V 23A EFCP

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.5W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-CSP (1.77x3.54)

パッケージ: 6-SMD, No Lead

在庫3,040

Logic Level Gate, 2.5V Drive

-

27nC @ 4.5V

-

2.5W

-

Surface Mount

6-SMD, No Lead

6-CSP (1.77x3.54)

FC8V33030L

Panasonic Electronic Components

MOSFET 2N-CH 33V 6.5A WMINI8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 33V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 480µA
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: WMini8-F1

パッケージ: 8-SMD, Flat Lead

在庫82,764

Logic Level Gate

33V

6.5A

20 mOhm @ 3.3A, 10V

2.5V @ 480µA

3.8nC @ 4.5V

360pF @ 10V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

WMini8-F1

AO8808A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7.9A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫464,124

Logic Level Gate

20V

-

14 mOhm @ 8A, 10V

1V @ 250µA

17.9nC @ 4.5V

1810pF @ 10V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

DI9942T

Diodes Incorporated

MOSFET N/P-CH 20V 2.5A 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,264

Standard

20V

2.5A

-

1.6W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

APTC60HM35T3G

Microsemi Corporation

MOSFET 4N-CH 600V 72A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Power - Max: 416W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

パッケージ: SP3

在庫6,928

Standard

600V

72A

35 mOhm @ 72A, 10V

3.9V @ 5.4mA

518nC @ 10V

14000pF @ 25V

416W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

BSM080D12P2C008

Rohm Semiconductor

SIC POWER MODULE-1200V-80A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 13.2mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Power - Max: 600W
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: Module

在庫7,440

Standard

1200V (1.2kV)

80A

-

4V @ 13.2mA

-

800pF @ 10V

600W

175°C (TJ)

Chassis Mount

Module

ZXMHC10A07T8TA

Diodes Incorporated

MOSFET 2N/2P-CH 100V 1A/0.8A SM8

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A, 800mA
Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

パッケージ: SOT-223-8

在庫28,740

Standard

100V

1A, 800mA

700 mOhm @ 1.5A, 10V

4V @ 250µA

2.9nC @ 10V

138pF @ 60V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

STS8C5H30L

STMicroelectronics

MOSFET N/P-CH 30V 8A/5.4A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫337,980

Logic Level Gate

30V

8A, 5.4A

22 mOhm @ 4A, 10V

1V @ 250µA

10nC @ 5V

857pF @ 25V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

QS6J11TR

Rohm Semiconductor

MOSFET 2P-CH 12V 2A TSMT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V
Power - Max: 600mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSMT6 (SC-95)

パッケージ: SOT-23-6 Thin, TSOT-23-6

在庫464,472

Logic Level Gate

12V

2A

105 mOhm @ 2A, 4.5V

1V @ 1mA

6.5nC @ 4.5V

770pF @ 6V

600mW

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSMT6 (SC-95)

APTM50AM24SG

Microsemi Corporation

MOSFET 2N-CH 500V 150A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫6,024

Standard

500V

150A

28 mOhm @ 75A, 10V

5V @ 6mA

434nC @ 10V

19600pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SI4936BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 6.9A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫834,072

Logic Level Gate

30V

6.9A

35 mOhm @ 5.9A, 10V

3V @ 250µA

15nC @ 10V

530pF @ 15V

2.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMA2002NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 2.9A 6-MICROFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 123 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Power - Max: 650mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

パッケージ: 6-VDFN Exposed Pad

在庫1,212,000

Logic Level Gate

30V

2.9A

123 mOhm @ 2.9A, 4.5V

1.5V @ 250µA

3nC @ 4.5V

220pF @ 15V

650mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)