ページ 57 - トランジスタ - FET、MOSFET - アレイ | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AUIRF7343Q	Infineon Technologies	MOSFET N/P-CH 55V 4.7/3.4A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	パッケージ: 8-SOIC	在庫2,640	Logic Level Gate	55V	4.7A, 3.4A	50 mOhm @ 4.7A, 10V	1V @ 250µA	36nC @ 10V	740pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
IRFI4019HG-117P	Infineon Technologies	MOSFET 2N-CH 150V 8.7A TO-220FP FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 8.7A Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Power - Max: 18W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack (Formed Leads) Supplier Device Package: TO-220-5 Full-Pak	パッケージ: TO-220-5 Full Pack (Formed Leads)	在庫48,108	Standard	150V	8.7A	95 mOhm @ 5.2A, 10V	4.9V @ 50µA	20nC @ 10V	810pF @ 25V	18W	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack (Formed Leads)	TO-220-5 Full-Pak
IRF7907PBF	Infineon Technologies	MOSFET 2N-CH 30V 9.1A/11A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫9,756	Logic Level Gate	30V	9.1A, 11A	16.4 mOhm @ 9.1A, 10V	2.35V @ 25µA	10nC @ 4.5V	850pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF9956PBF	Infineon Technologies	MOSFET 2N-CH 30V 3.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫3,248	Logic Level Gate	30V	3.5A	100 mOhm @ 2.2A, 10V	1V @ 250µA	14nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ECH8619-TL-E	ON Semiconductor	MOSFET N/P-CH 60V 3A/2A ECH8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2A Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	パッケージ: 8-SMD, Flat Lead	在庫14,196	Logic Level Gate	60V	3A, 2A	93 mOhm @ 1.5A, 10V	-	12.8nC @ 10V	560pF @ 20V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
XN0187200L	Panasonic Electronic Components	MOSFET 2N-CH 50V 0.1A MINI-5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: Mini5-G1	パッケージ: SC-74A, SOT-753	在庫2,144	Standard	50V	100mA	50 Ohm @ 20mA, 5V	3.5V @ 100µA	-	15pF @ 5V	300mW	150°C (TJ)	Surface Mount	SC-74A, SOT-753	Mini5-G1
SI4936ADY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.4A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫15,996	Logic Level Gate	30V	4.4A	36 mOhm @ 5.9A, 10V	3V @ 250µA	20nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AON6924	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 15A/28A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A, 28A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V Power - Max: 2W, 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN-EP (5x6)	パッケージ: 8-WDFN Exposed Pad	在庫5,552	Logic Level Gate	30V	15A, 28A	5.2 mOhm @ 20A, 10V	2.3V @ 250µA	21nC @ 10V	1560pF @ 15V	2W, 2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN-EP (5x6)
EMH2314-TL-H	ON Semiconductor	MOSFET 2P-CH 12V 5A EMH8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 37 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 6V Power - Max: 1.2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	パッケージ: 8-SMD, Flat Lead	在庫2,656	Logic Level Gate	12V	5A	37 mOhm @ 2.5A, 4.5V	-	12nC @ 4.5V	1300pF @ 6V	1.2W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-EMH
SSM6N55NU,LF(T	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A UDFN6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN(2x2)	パッケージ: 6-WDFN Exposed Pad	在庫7,536	Logic Level Gate	30V	4A	46 mOhm @ 4A, 10V	2.5V @ 100µA	2.5nC @ 4.5V	280pF @ 15V	1W	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-µDFN(2x2)
SH8M13GZETB	Rohm Semiconductor	MIDDLE POWER MOSFET SERIES (DUAL FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 7A Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,264	-	30V	6A, 7A	29 mOhm @ 7A, 10V	2.5V @ 1mA	18nC @ 5V	1200pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
QH8KA4TCR	Rohm Semiconductor	30V NCH+NCH MIDDLE POWER MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	パッケージ: 8-SMD, Flat Lead	在庫7,888	-	30V	9A	17 mOhm @ 7A, 4.5V	1.5V @ 1mA	12nC @ 4.5V	1400pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
BSL308CH6327XTSA1	Infineon Technologies	MOSFET N/P-CH 30V 2.3A/2A 6TSOP FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	パッケージ: SOT-23-6 Thin, TSOT-23-6	在庫22,398	Logic Level Gate, 4.5V Drive	30V	2.3A, 2A	57 mOhm @ 2.3A, 10V	2V @ 11µA	1.5nC @ 10V	275pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
SH8M3TB1	Rohm Semiconductor	MOSFET N/P-CH 30V 5A/4.5A SOP8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫23,880	Logic Level Gate	30V	5A, 4.5A	51 mOhm @ 5A, 10V	2.5V @ 1mA	3.9nC @ 5V	230pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
EPC2108ENGRT	EPC	TRANS GAN 3N-CH BUMPED DIE FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	パッケージ: 9-VFBGA	在庫23,700	GaNFET (Gallium Nitride)	60V, 100V	1.7A, 500mA	190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V	2.5V @ 100µA, 2.5V @ 20µA	0.22nC @ 5V, 0.044nC @ 5V	22pF @ 30V, 7pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	9-VFBGA	9-BGA (1.35x1.35)
FDMA1029PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.1A MICROFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 95 mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	パッケージ: 6-VDFN Exposed Pad	在庫1,449,780	Logic Level Gate	20V	3.1A	95 mOhm @ 3.1A, 4.5V	1.5V @ 250µA	10nC @ 4.5V	540pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
SI7234DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 12V 60A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 6V Power - Max: 46W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	パッケージ: PowerPAK? SO-8 Dual	在庫50,460	Standard	12V	60A	3.4 mOhm @ 20A, 4.5V	1.5V @ 250µA	120nC @ 10V	5000pF @ 6V	46W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
DMN5L06DWK-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.305A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫1,195,140	Logic Level Gate	50V	305mA	2 Ohm @ 50mA, 5V	1V @ 250µA	-	50pF @ 25V	250mW	-65°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
FF4MR20KM1HHPSA1	Infineon Technologies	SIC 2N-CH 2000V AG-62MMHB FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 2000V (2kV) Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V Vgs(th) (Max) @ Id: 5.15V @ 168mA Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MMHB	パッケージ: -	在庫30	-	2000V (2kV)	280A (Tc)	5.3mOhm @ 300A, 18V	5.15V @ 168mA	1170nC @ 18V	36100pF @ 1.2kV	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-62MMHB
DMN3012LEG-7	Diodes Incorporated	MOSFET 2N-CH 30V 10A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V Power - Max: 2.2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	パッケージ: -	Request a Quote	-	30V	10A (Ta), 20A (Tc)	12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V	2.1V @ 250µA, 1.15V @ 250µA	6.1nC @ 4.5V, 12.6nC @ 4.5V	850pF @ 15V, 1480pF @ 15V	2.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)
2SD1936T-AC-SY	Sanyo	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PJT138K-AU_R1_000A1	Panjit International Inc.	MOSFET 2N-CH 50V 0.36A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 236mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	パッケージ: -	在庫18,375	-	50V	360mA (Ta)	1.6Ohm @ 500mA, 10V	1.5V @ 250µA	1nC @ 4.5V	50pF @ 25V	236mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SP8K32TB1	Rohm Semiconductor	MOSFET 2N-CH 60V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: -	Request a Quote	Logic Level Gate, 4V Drive	60V	4.5A (Ta)	65mOhm @ 4.5A, 10V	2.5V @ 1mA	10nC @ 5V	500pF @ 10V	2W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NDH8521C	Fairchild Semiconductor	MOSFET N/P-CH 30V 3.8A SUPERSOT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 2.7A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 560pF @ 15V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSOP (0.130", 3.30mm Width) Supplier Device Package: SuperSOT™-8	パッケージ: -	Request a Quote	-	30V	3.8A (Ta), 2.7A (Ta)	33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V	2V @ 250µA	25nC @ 10V, 27nC @ 10V	500pF @ 15V, 560pF @ 15V	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSOP (0.130", 3.30mm Width)	SuperSOT™-8
MCB30P1200LB-TUB	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	パッケージ: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
SIX3439KA-TPQ2	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, 0.86nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, 40pF @ 16V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	パッケージ: -	Request a Quote	-	20V	750mA, 600mA	300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V	1.1V @ 250µA	0.8nC @ 4.5V, 0.86nC @ 4.5V	33pF @ 16V, 40pF @ 16V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NTTFS5C471NLTAG	onsemi	MOSFET 40V U8FL FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
UPA1764G-E1-A	Renesas Electronics Corporation	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

AUIRF7343Q

Infineon Technologies

MOSFET N/P-CH 55V 4.7/3.4A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

パッケージ: 8-SOIC

在庫2,640

Logic Level Gate

55V

4.7A, 3.4A

50 mOhm @ 4.7A, 10V

1V @ 250µA

36nC @ 10V

740pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SO

IRFI4019HG-117P

Infineon Technologies

MOSFET 2N-CH 150V 8.7A TO-220FP

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A
Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Power - Max: 18W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5 Full Pack (Formed Leads)
Supplier Device Package: TO-220-5 Full-Pak

パッケージ: TO-220-5 Full Pack (Formed Leads)

在庫48,108

Standard

150V

8.7A

95 mOhm @ 5.2A, 10V

4.9V @ 50µA

20nC @ 10V

810pF @ 25V

18W

-55°C ~ 150°C (TJ)

Through Hole

TO-220-5 Full Pack (Formed Leads)

TO-220-5 Full-Pak

IRF7907PBF

Infineon Technologies

MOSFET 2N-CH 30V 9.1A/11A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A
Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫9,756

Logic Level Gate

30V

9.1A, 11A

16.4 mOhm @ 9.1A, 10V

2.35V @ 25µA

10nC @ 4.5V

850pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF9956PBF

Infineon Technologies

MOSFET 2N-CH 30V 3.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫3,248

Logic Level Gate

30V

3.5A

100 mOhm @ 2.2A, 10V

1V @ 250µA

14nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ECH8619-TL-E

ON Semiconductor

MOSFET N/P-CH 60V 3A/2A ECH8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2A
Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

パッケージ: 8-SMD, Flat Lead

在庫14,196

Logic Level Gate

60V

3A, 2A

93 mOhm @ 1.5A, 10V

-

12.8nC @ 10V

560pF @ 20V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

XN0187200L

Panasonic Electronic Components

MOSFET 2N-CH 50V 0.1A MINI-5

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: Mini5-G1

パッケージ: SC-74A, SOT-753

在庫2,144

Standard

50V

100mA

50 Ohm @ 20mA, 5V

3.5V @ 100µA

-

15pF @ 5V

300mW

150°C (TJ)

Surface Mount

SC-74A, SOT-753

Mini5-G1

SI4936ADY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4.4A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫15,996

Logic Level Gate

30V

4.4A

36 mOhm @ 5.9A, 10V

3V @ 250µA

20nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AON6924

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 15A/28A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A, 28A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
Power - Max: 2W, 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN-EP (5x6)

パッケージ: 8-WDFN Exposed Pad

在庫5,552

Logic Level Gate

30V

15A, 28A

5.2 mOhm @ 20A, 10V

2.3V @ 250µA

21nC @ 10V

1560pF @ 15V

2W, 2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN-EP (5x6)

EMH2314-TL-H

ON Semiconductor

MOSFET 2P-CH 12V 5A EMH8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 37 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 6V
Power - Max: 1.2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-EMH

パッケージ: 8-SMD, Flat Lead

在庫2,656

Logic Level Gate

12V

5A

37 mOhm @ 2.5A, 4.5V

-

12nC @ 4.5V

1300pF @ 6V

1.2W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-EMH

SSM6N55NU,LF(T

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-µDFN(2x2)

パッケージ: 6-WDFN Exposed Pad

在庫7,536

Logic Level Gate

30V

4A

46 mOhm @ 4A, 10V

2.5V @ 100µA

2.5nC @ 4.5V

280pF @ 15V

1W

150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-µDFN(2x2)

SH8M13GZETB

Rohm Semiconductor

MIDDLE POWER MOSFET SERIES (DUAL

FET Type: N and P-Channel
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,264

-

30V

6A, 7A

29 mOhm @ 7A, 10V

2.5V @ 1mA

18nC @ 5V

1200pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

QH8KA4TCR

Rohm Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

パッケージ: 8-SMD, Flat Lead

在庫7,888

-

30V

9A

17 mOhm @ 7A, 4.5V

1.5V @ 1mA

12nC @ 4.5V

1400pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

BSL308CH6327XTSA1

Infineon Technologies

MOSFET N/P-CH 30V 2.3A/2A 6TSOP

FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id: 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

パッケージ: SOT-23-6 Thin, TSOT-23-6

在庫22,398

Logic Level Gate, 4.5V Drive

30V

2.3A, 2A

57 mOhm @ 2.3A, 10V

2V @ 11µA

1.5nC @ 10V

275pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

SH8M3TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A SOP8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫23,880

Logic Level Gate

30V

5A, 4.5A

51 mOhm @ 5A, 10V

2.5V @ 1mA

3.9nC @ 5V

230pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

EPC2108ENGRT

EPC

TRANS GAN 3N-CH BUMPED DIE

FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Supplier Device Package: 9-BGA (1.35x1.35)

パッケージ: 9-VFBGA

在庫23,700

GaNFET (Gallium Nitride)

60V, 100V

1.7A, 500mA

190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V

2.5V @ 100µA, 2.5V @ 20µA

0.22nC @ 5V, 0.044nC @ 5V

22pF @ 30V, 7pF @ 30V

-

-40°C ~ 150°C (TJ)

Surface Mount

9-VFBGA

9-BGA (1.35x1.35)

FDMA1029PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.1A MICROFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 95 mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

パッケージ: 6-VDFN Exposed Pad

在庫1,449,780

Logic Level Gate

20V

3.1A

95 mOhm @ 3.1A, 4.5V

1.5V @ 250µA

10nC @ 4.5V

540pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

SI7234DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 12V 60A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 6V
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

パッケージ: PowerPAK? SO-8 Dual

在庫50,460

Standard

12V

60A

3.4 mOhm @ 20A, 4.5V

1.5V @ 250µA

120nC @ 10V

5000pF @ 6V

46W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

DMN5L06DWK-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.305A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫1,195,140

Logic Level Gate

50V

305mA

2 Ohm @ 50mA, 5V

1V @ 250µA

-

50pF @ 25V

250mW

-65°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

FF4MR20KM1HHPSA1

Infineon Technologies

SIC 2N-CH 2000V AG-62MMHB

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MMHB

パッケージ: -

在庫30

-

2000V (2kV)

280A (Tc)

5.3mOhm @ 300A, 18V

5.15V @ 168mA

1170nC @ 18V

36100pF @ 1.2kV

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-62MMHB

DMN3012LEG-7

Diodes Incorporated

MOSFET 2N-CH 30V 10A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Power - Max: 2.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)

パッケージ: -

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-

30V

10A (Ta), 20A (Tc)

12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V

2.1V @ 250µA, 1.15V @ 250µA

6.1nC @ 4.5V, 12.6nC @ 4.5V

850pF @ 15V, 1480pF @ 15V

2.2W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PowerDI3333-8 (Type D)

2SD1936T-AC-SY

Sanyo

MOSFET P-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

PJT138K-AU_R1_000A1

Panjit International Inc.

MOSFET 2N-CH 50V 0.36A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 236mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

パッケージ: -

在庫18,375

-

50V

360mA (Ta)

1.6Ohm @ 500mA, 10V

1.5V @ 250µA

1nC @ 4.5V

50pF @ 25V

236mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SP8K32TB1

Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: -

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Logic Level Gate, 4V Drive

60V

4.5A (Ta)

65mOhm @ 4.5A, 10V

2.5V @ 1mA

10nC @ 5V

500pF @ 10V

2W (Ta)

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NDH8521C

Fairchild Semiconductor

MOSFET N/P-CH 30V 3.8A SUPERSOT

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 560pF @ 15V
Power - Max: 800mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSOP (0.130", 3.30mm Width)
Supplier Device Package: SuperSOT™-8

パッケージ: -

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-

30V

3.8A (Ta), 2.7A (Ta)

33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V

2V @ 250µA

25nC @ 10V, 27nC @ 10V

500pF @ 15V, 560pF @ 15V

800mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSOP (0.130", 3.30mm Width)

SuperSOT™-8

MCB30P1200LB-TUB

IXYS

SIC 2N-CH 1200V 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

パッケージ: -

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-

1200V (1.2kV)

-

Surface Mount

9-PowerSMD

9-SMPD-B

SIX3439KA-TPQ2

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, 0.86nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, 40pF @ 16V
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

パッケージ: -

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-

20V

750mA, 600mA

300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V

1.1V @ 250µA

0.8nC @ 4.5V, 0.86nC @ 4.5V

33pF @ 16V, 40pF @ 16V

150mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NTTFS5C471NLTAG

onsemi

MOSFET 40V U8FL

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

UPA1764G-E1-A

Renesas Electronics Corporation

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-