ページ 68 - トランジスタ - FET、MOSFET - アレイ | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AON5802ALS	Alpha & Omega Semiconductor Inc.	MOSFET N-CH DUAL DFN FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-DFN (2x5)	パッケージ: 6-WDFN Exposed Pad	在庫134,220	-	-	-	-	-	-	-	-	-	Surface Mount	6-WDFN Exposed Pad	6-DFN (2x5)
AO4807L	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 6A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫2,000	Logic Level Gate	30V	6A	35 mOhm @ 6A, 10V	2.4V @ 250µA	16nC @ 10V	760pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO3415B	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 6A 8-SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,192	-	-	-	-	-	-	-	-	-	-	-	-
SI1563DH-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 1.13A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 570mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫611,352	Logic Level Gate	20V	1.13A, 880mA	280 mOhm @ 1.13A, 4.5V	1V @ 100µA	2nC @ 4.5V	-	570mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
STS4DNF30L	STMicroelectronics	MOSFET 2N-CH 30V 4A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫406,656	Logic Level Gate	30V	4A	50 mOhm @ 2A, 10V	1V @ 250µA	9nC @ 10V	330pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTML502UM90R020T3AG	Microsemi Corporation	MOSFET 2N-CH 500V 52A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 52A Rds On (Max) @ Id, Vgs: 108 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power - Max: 568W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	パッケージ: SP3	在庫6,560	Standard	500V	52A	108 mOhm @ 26A, 10V	4V @ 2.5mA	-	7600pF @ 25V	568W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
ALD212908APAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫7,728	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
NTMFD4901NFT3G	ON Semiconductor	MOSFET 2N-CH 30V 8DFN FET Type: 2 N-Channel (Dual), Schottky FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.3A, 17.9A Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power - Max: 1.1W, 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	パッケージ: 8-PowerTDFN	在庫6,112	Logic Level Gate	30V	10.3A, 17.9A	6.5 mOhm @ 10A, 10V	2.2V @ 250µA	9.7nC @ 4.5V	1150pF @ 15V	1.1W, 1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMD6N04R2G	ON Semiconductor	MOSFET 2N-CH 40V 4.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V Power - Max: 1.29W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫6,416	Standard	40V	4.6A	34 mOhm @ 5.8A, 10V	3V @ 250µA	30nC @ 10V	900pF @ 32V	1.29W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SIA533EDJ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	パッケージ: PowerPAK? SC-70-6 Dual	在庫2,656	Logic Level Gate	12V	4.5A	34 mOhm @ 4.6A, 4.5V	1V @ 250µA	15nC @ 10V	420pF @ 6V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
IRF7507TRPBF	Infineon Technologies	MOSFET N/P-CH 20V 1.7A MICRO8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	在庫27,876	Logic Level Gate	20V	2.4A, 1.7A	140 mOhm @ 1.7A, 4.5V	700mV @ 250µA	8nC @ 4.5V	260pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
SMA5118	Sanken	MOSFET 6N-CH 500V 5A 12-SIP FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V Power - Max: 4W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	パッケージ: 12-SIP, Exposed Tab	在庫6,192	Standard	500V	5A	1.4 Ohm @ 2.5A, 10V	4V @ 1mA	-	770pF @ 10V	4W	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
DMP2060UFDB-7	Diodes Incorporated	MOSFET 2P-CH 20V 3.2A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	パッケージ: 6-UDFN Exposed Pad	在庫3,424	Standard	20V	3.2A	90 mOhm @ 2.9A, 4.5V	1.4V @ 250µA	18nC @ 8V	881pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
NVMFD5853NLT1G	ON Semiconductor	MOSFET 2N-CH 40V 12A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Power - Max: 3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	パッケージ: 8-PowerTDFN	在庫18,000	Logic Level Gate	40V	12A	10 mOhm @ 15A, 10V	2.4V @ 250µA	23nC @ 10V	1100pF @ 25V	3W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
FDMS9620S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 7.5A/10A PWR56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A, 10A Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	パッケージ: 8-PowerWDFN	在庫661,428	Logic Level Gate	30V	7.5A, 10A	21.5 mOhm @ 7.5A, 10V	3V @ 250µA	14nC @ 10V	665pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
DMG4932LSD-13	Diodes Incorporated	MOSFET 2N-CH 30V 9.5A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V Power - Max: 1.19W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫60,000	Logic Level Gate	30V	9.5A	15 mOhm @ 9A, 10V	2.4V @ 250µA	42nC @ 10V	1932pF @ 15V	1.19W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC3032LSD-13	Diodes Incorporated	MOSFET N/P-CH 30V 8.1A/7A 8SOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A Rds On (Max) @ Id, Vgs: 32 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫245,448	Logic Level Gate	30V	8.1A, 7A	32 mOhm @ 7A, 10V	2.1V @ 250µA	9.2nC @ 10V	404.5pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MSCSM170TAM15CTPAG	Microchip Technology	SIC 6N-CH 1700V 179A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Power - Max: 843W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	在庫30	-	1700V (1.7kV)	179A (Tc)	15mOhm @ 90A, 20V	3.2V @ 7.5mA	534nC @ 20V	9900pF @ 1000V	843W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
NVMFD5C446NLWFT1G	onsemi	MOSFET 2N-CH 40V 25A/145A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Power - Max: 3.5W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	パッケージ: -	在庫3,180	-	40V	25A (Ta), 145A (Tc)	2.65mOhm @ 20A, 10V	2.2V @ 90µA	25nC @ 4.5V	3170pF @ 25V	3.5W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
VN2410M	Siliconix	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
UPA1981TE-T1-A	Renesas	MOSFET N/P-CH 8V 2.8A SC95 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 5V, 105mOhm @ 1.9A, 2.5V Vgs(th) (Max) @ Id: 200mV @ 2.8A, 200mV @ 1.9A Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SC-95 Supplier Device Package: SC-95	パッケージ: -	Request a Quote	-	8V	2.8A (Ta)	70mOhm @ 2.8A, 5V, 105mOhm @ 1.9A, 2.5V	200mV @ 2.8A, 200mV @ 1.9A	-	-	1W (Ta)	150°C	Surface Mount	SC-95	SC-95
DMP2110UFDB-7	Diodes Incorporated	MOSFET 2P-CH 20V 3.2A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V Power - Max: 820mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	パッケージ: -	Request a Quote	-	20V	3.2A (Ta)	75mOhm @ 2.8A, 4.5V	1V @ 250µA	12.7nC @ 8V	443pF @ 10V	820mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
FF1MR12KM1HHPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫48	-	-	-	-	-	-	-	-	-	-	-	-
M1F45M12W2-1LA	STMicroelectronics	AUTOMOTIVE-GRADE ACEPACK DMT-32 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 2086pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: 32-PowerDIP Module (1.264", 32.10mm) Supplier Device Package: ACEPACK DMT-32	パッケージ: -	在庫255	-	1200V (1.2kV)	30A (Tc)	64mOhm @ 20A, 18V	5V @ 1mA	100nC @ 18V	2086pF @ 800V	-	-40°C ~ 175°C (TJ)	Through Hole	32-PowerDIP Module (1.264", 32.10mm)	ACEPACK DMT-32
NVMFD5C478NLWFT1G	onsemi	MOSFET 2N-CH 40V 10.5A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Power - Max: 3.1W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	パッケージ: -	在庫4,485	-	40V	10.5A (Ta), 29A (Tc)	14.5mOhm @ 7.5A, 10V	2.2V @ 20µA	8.1nC @ 10V	420pF @ 25V	3.1W (Ta), 23W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
SQ4284EY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 40V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power - Max: 3.9W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: -	在庫14,481	-	40V	8A (Tc)	13.5mOhm @ 7A, 10V	2.5V @ 250µA	45nC @ 10V	2200pF @ 25V	3.9W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SP8K2HZGTB	Rohm Semiconductor	MOSFET 2N-CH 30V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: -	在庫7,170	-	30V	6A (Ta)	30mOhm @ 6A, 10V	2.5V @ 1mA	10.1nC @ 5V	520pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SQS966ENW-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 6A PWRPAK1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V Power - Max: 27.8W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® 1212-8W Dual Supplier Device Package: PowerPAK® 1212-8W Dual	パッケージ: -	在庫26,310	-	60V	6A (Tc)	36mOhm @ 1.25A, 10V	2.5V @ 250µA	8.8nC @ 10V	572pF @ 25V	27.8W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerPAK® 1212-8W Dual	PowerPAK® 1212-8W Dual

AON5802ALS

Alpha & Omega Semiconductor Inc.

MOSFET N-CH DUAL DFN

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-DFN (2x5)

パッケージ: 6-WDFN Exposed Pad

在庫134,220

-

Surface Mount

6-WDFN Exposed Pad

6-DFN (2x5)

AO4807L

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 6A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫2,000

Logic Level Gate

30V

6A

35 mOhm @ 6A, 10V

2.4V @ 250µA

16nC @ 10V

760pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO3415B

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 6A 8-SOIC

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,192

-

SI1563DH-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 1.13A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫611,352

Logic Level Gate

20V

1.13A, 880mA

280 mOhm @ 1.13A, 4.5V

1V @ 100µA

2nC @ 4.5V

-

570mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

STS4DNF30L

STMicroelectronics

MOSFET 2N-CH 30V 4A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫406,656

Logic Level Gate

30V

4A

50 mOhm @ 2A, 10V

1V @ 250µA

9nC @ 10V

330pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTML502UM90R020T3AG

Microsemi Corporation

MOSFET 2N-CH 500V 52A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 52A
Rds On (Max) @ Id, Vgs: 108 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Power - Max: 568W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

パッケージ: SP3

在庫6,560

Standard

500V

52A

108 mOhm @ 26A, 10V

4V @ 2.5mA

-

7600pF @ 25V

568W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

ALD212908APAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫7,728

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

NTMFD4901NFT3G

ON Semiconductor

MOSFET 2N-CH 30V 8DFN

FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 17.9A
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Power - Max: 1.1W, 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

パッケージ: 8-PowerTDFN

在庫6,112

Logic Level Gate

30V

10.3A, 17.9A

6.5 mOhm @ 10A, 10V

2.2V @ 250µA

9.7nC @ 4.5V

1150pF @ 15V

1.1W, 1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

NVMD6N04R2G

ON Semiconductor

MOSFET 2N-CH 40V 4.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Power - Max: 1.29W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫6,416

Standard

40V

4.6A

34 mOhm @ 5.8A, 10V

3V @ 250µA

30nC @ 10V

900pF @ 32V

1.29W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SIA533EDJ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 12V 4.5A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

パッケージ: PowerPAK? SC-70-6 Dual

在庫2,656

Logic Level Gate

12V

4.5A

34 mOhm @ 4.6A, 4.5V

1V @ 250µA

15nC @ 10V

420pF @ 6V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

IRF7507TRPBF

Infineon Technologies

MOSFET N/P-CH 20V 1.7A MICRO8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

在庫27,876

Logic Level Gate

20V

2.4A, 1.7A

140 mOhm @ 1.7A, 4.5V

700mV @ 250µA

8nC @ 4.5V

260pF @ 15V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

SMA5118

Sanken

MOSFET 6N-CH 500V 5A 12-SIP

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Power - Max: 4W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

パッケージ: 12-SIP, Exposed Tab

在庫6,192

Standard

500V

5A

1.4 Ohm @ 2.5A, 10V

4V @ 1mA

-

770pF @ 10V

4W

150°C (TJ)

Through Hole

12-SIP, Exposed Tab

12-SIP

DMP2060UFDB-7

Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

パッケージ: 6-UDFN Exposed Pad

在庫3,424

Standard

20V

3.2A

90 mOhm @ 2.9A, 4.5V

1.4V @ 250µA

18nC @ 8V

881pF @ 10V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

NVMFD5853NLT1G

ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Power - Max: 3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

パッケージ: 8-PowerTDFN

在庫18,000

Logic Level Gate

40V

12A

10 mOhm @ 15A, 10V

2.4V @ 250µA

23nC @ 10V

1100pF @ 25V

3W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

FDMS9620S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7.5A/10A PWR56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A, 10A
Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

パッケージ: 8-PowerWDFN

在庫661,428

Logic Level Gate

30V

7.5A, 10A

21.5 mOhm @ 7.5A, 10V

3V @ 250µA

14nC @ 10V

665pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

DMG4932LSD-13

Diodes Incorporated

MOSFET 2N-CH 30V 9.5A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
Power - Max: 1.19W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫60,000

Logic Level Gate

30V

9.5A

15 mOhm @ 9A, 10V

2.4V @ 250µA

42nC @ 10V

1932pF @ 15V

1.19W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC3032LSD-13

Diodes Incorporated

MOSFET N/P-CH 30V 8.1A/7A 8SOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫245,448

Logic Level Gate

30V

8.1A, 7A

32 mOhm @ 7A, 10V

2.1V @ 250µA

9.2nC @ 10V

404.5pF @ 15V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MSCSM170TAM15CTPAG

Microchip Technology

SIC 6N-CH 1700V 179A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
Power - Max: 843W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

在庫30

-

1700V (1.7kV)

179A (Tc)

15mOhm @ 90A, 20V

3.2V @ 7.5mA

534nC @ 20V

9900pF @ 1000V

843W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

NVMFD5C446NLWFT1G

onsemi

MOSFET 2N-CH 40V 25A/145A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Power - Max: 3.5W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

パッケージ: -

在庫3,180

-

40V

25A (Ta), 145A (Tc)

2.65mOhm @ 20A, 10V

2.2V @ 90µA

25nC @ 4.5V

3170pF @ 25V

3.5W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

VN2410M

Siliconix

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

UPA1981TE-T1-A

Renesas

MOSFET N/P-CH 8V 2.8A SC95

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 5V, 105mOhm @ 1.9A, 2.5V
Vgs(th) (Max) @ Id: 200mV @ 2.8A, 200mV @ 1.9A
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-95
Supplier Device Package: SC-95

パッケージ: -

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8V

2.8A (Ta)

70mOhm @ 2.8A, 5V, 105mOhm @ 1.9A, 2.5V

200mV @ 2.8A, 200mV @ 1.9A

-

1W (Ta)

150°C

Surface Mount

SC-95

DMP2110UFDB-7

Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V
Power - Max: 820mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

パッケージ: -

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20V

3.2A (Ta)

75mOhm @ 2.8A, 4.5V

1V @ 250µA

12.7nC @ 8V

443pF @ 10V

820mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

FF1MR12KM1HHPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫48

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M1F45M12W2-1LA

STMicroelectronics

AUTOMOTIVE-GRADE ACEPACK DMT-32

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 2086pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Supplier Device Package: ACEPACK DMT-32

パッケージ: -

在庫255

-

1200V (1.2kV)

30A (Tc)

64mOhm @ 20A, 18V

5V @ 1mA

100nC @ 18V

2086pF @ 800V

-

-40°C ~ 175°C (TJ)

Through Hole

32-PowerDIP Module (1.264", 32.10mm)

ACEPACK DMT-32

NVMFD5C478NLWFT1G

onsemi

MOSFET 2N-CH 40V 10.5A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Power - Max: 3.1W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

パッケージ: -

在庫4,485

-

40V

10.5A (Ta), 29A (Tc)

14.5mOhm @ 7.5A, 10V

2.2V @ 20µA

8.1nC @ 10V

420pF @ 25V

3.1W (Ta), 23W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

SQ4284EY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Power - Max: 3.9W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: -

在庫14,481

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40V

8A (Tc)

13.5mOhm @ 7A, 10V

2.5V @ 250µA

45nC @ 10V

2200pF @ 25V

3.9W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SP8K2HZGTB

Rohm Semiconductor

MOSFET 2N-CH 30V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: -

在庫7,170

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30V

6A (Ta)

30mOhm @ 6A, 10V

2.5V @ 1mA

10.1nC @ 5V

520pF @ 10V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SQS966ENW-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 6A PWRPAK1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Power - Max: 27.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8W Dual
Supplier Device Package: PowerPAK® 1212-8W Dual

パッケージ: -

在庫26,310

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60V

6A (Tc)

36mOhm @ 1.25A, 10V

2.5V @ 250µA

8.8nC @ 10V

572pF @ 25V

27.8W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

PowerPAK® 1212-8W Dual