ページ 73 - トランジスタ - FET、MOSFET - アレイ | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NTUD3171PZT5G	ON Semiconductor	MOSFET 2P-CH 20V 0.2A SOT-963 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 15V Power - Max: 125mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	パッケージ: SOT-963	在庫96,000	Logic Level Gate	20V	200mA	5 Ohm @ 100mA, 4.5V	1V @ 250µA	-	13.5pF @ 15V	125mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
SIA914DJ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 4.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	パッケージ: PowerPAK? SC-70-6 Dual	在庫4,032	Logic Level Gate	20V	4.5A	53 mOhm @ 3.7A, 4.5V	1V @ 250µA	11.5nC @ 8V	400pF @ 10V	6.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
PMDXB950UPE	Nexperia USA Inc.	MOSFET 2P-CH 20V 0.5A 6DFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Power - Max: 265mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: 6-DFN (1.1x1)	パッケージ: 6-XFDFN Exposed Pad	在庫7,840	Logic Level Gate	20V	500mA	1.4 Ohm @ 500mA, 4.5V	950mV @ 250µA	2.1nC @ 4.5V	43pF @ 10V	265mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	6-DFN (1.1x1)
BUK9K6R2-40E,115	Nexperia USA Inc.	MOSFET 2N-CH 40V 40A LFPAK56D FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V Power - Max: 68W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	パッケージ: SOT-1205, 8-LFPAK56	在庫6,144	Logic Level Gate	40V	40A	6 mOhm @ 25A, 10V	2.1V @ 1mA	35.4nC @ 10V	3281pF @ 25V	68W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
DMN3032LFDBQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 6.2A U-DFN2020 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	パッケージ: 6-UDFN Exposed Pad	在庫6,528	Standard	30V	6.2A	30 mOhm @ 5.8A, 10V	2V @ 250µA	10.6nC @ 10V	500pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMC2450UV-7	Diodes Incorporated	MOSFET N/P-CH 20V SOT563 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	パッケージ: SOT-563, SOT-666	在庫6,384	Standard	20V	1.03A, 700mA	480 mOhm @ 200mA, 5V	900mV @ 250µA	0.5nC @ 4.5V	37.1pF @ 10V	450mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
ALD1117PAL	Advanced Linear Devices Inc.	MOSFET 2P-CH 10.6V 8DIP FET Type: 2 P-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫7,760	Standard	10.6V	-	1800 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
PMDPB95XNE2X	Nexperia USA Inc.	MOSFET ARRAY 2NCH 30V DFN2020-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 99 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V Power - Max: 510mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)	パッケージ: 6-UDFN Exposed Pad	在庫4,880	Standard	30V	2.7A (Ta)	99 mOhm @ 2.8A, 4.5V	1.25V @ 250µA	4.5nC @ 4.5V	258pF @ 15V	510mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	6-HUSON (2x2)
FDS6990A	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 7.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫85,080	Logic Level Gate	30V	7.5A	18 mOhm @ 7.5A, 10V	3V @ 250µA	17nC @ 5V	1235pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS7608S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/15A 8-PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 15A Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	パッケージ: 8-PowerWDFN	在庫3,703,812	Logic Level Gate	30V	12A, 15A	10 mOhm @ 12A, 10V	3V @ 250µA	24nC @ 10V	1510pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
ECH8668-TL-H	ON Semiconductor	MOSFET N/P-CH 20V 7.5A/5A ECH8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A, 5A Rds On (Max) @ Id, Vgs: 17 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	パッケージ: 8-SMD, Flat Lead	在庫3,424	Logic Level Gate	20V	7.5A, 5A	17 mOhm @ 4A, 4.5V	-	10.8nC @ 4.5V	1060pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
EM6K31T2R	Rohm Semiconductor	MOSFET 2N-CH 60V 0.25A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	パッケージ: SOT-563, SOT-666	在庫60,000	Logic Level Gate	60V	250mA	2.4 Ohm @ 250mA, 10V	2.3V @ 1mA	-	15pF @ 25V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
SH8KA2GZETB	Rohm Semiconductor	30V NCH+NCH MIDDLE POWER MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 28 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V Power - Max: 2.8W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫23,598	-	30V	8A	28 mOhm @ 8A, 10V	2.5V @ 1mA	8nC @ 10V	330pF @ 15V	2.8W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SI4542DY	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 6A 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫33,324	Standard	30V	6A	28 mOhm @ 6A, 10V	3V @ 250µA	13nC @ 5V	830pF @ 15V	1W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI5908DC-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.4A 1206-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	パッケージ: 8-SMD, Flat Lead	在庫334,068	Logic Level Gate	20V	4.4A	40 mOhm @ 4.4A, 4.5V	1V @ 250µA	7.5nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
FDY1002PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 0.83A SC89-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 830mA Rds On (Max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V Power - Max: 446mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	パッケージ: SOT-563, SOT-666	在庫1,400,040	Logic Level Gate	20V	830mA	500 mOhm @ 830mA, 4.5V	1V @ 250µA	3.1nC @ 4.5V	135pF @ 10V	446mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
FDMC8030	Fairchild/ON Semiconductor	MOSFET 2N-CH 40V 12A 8MLP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 20V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	パッケージ: 8-PowerWDFN	在庫75,720	Logic Level Gate	40V	12A	10 mOhm @ 12A, 10V	2.8V @ 250µA	30nC @ 10V	1975pF @ 20V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
SI6926ADQ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫7,280	Logic Level Gate	20V	4.1A	30 mOhm @ 4.5A, 4.5V	1V @ 250µA	10.5nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
PJX8601_R1_00001	Panjit International Inc.	MOSFET N/P-CH 20V 0.5A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	パッケージ: -	在庫10,878	-	20V	500mA (Ta)	400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V	900mV @ 250µA, 1V @ 250µA	1.4nC @ 4.5V	67pF @ 10V, 38pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
CPH5616-TL-E	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN52D0UV-13	Diodes Incorporated	MOSFET 2N-CH 50V 0.48A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V Power - Max: 480mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	パッケージ: -	在庫30,000	-	50V	480mA (Ta)	2Ohm @ 5mA, 5V	1V @ 250µA	1.5nC @ 10V	39pF @ 25V	480mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FF2MR12KM1HOSA1	Infineon Technologies	SIC 2N-CH 1200V 500A AG-62MM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V Vgs(th) (Max) @ Id: 5.15V @ 224mA Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MM	パッケージ: -	在庫30	-	1200V (1.2kV)	500A (Tc)	2.13mOhm @ 500A, 15V	5.15V @ 224mA	1340nC @ 15V	39700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-62MM
FDY1002PZ-G	onsemi	MOSFET 2P-CH 20V 0.83A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 830mA (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V Power - Max: 446mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	パッケージ: -	Request a Quote	Logic Level Gate	20V	830mA (Ta)	500mOhm @ 830mA, 4.5V	1V @ 250µA	3.1nC @ 4.5V	135pF @ 10V	446mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SIS932EDN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6A PPAK 1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Power - Max: 2.6W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	パッケージ: -	在庫8,529	-	30V	6A (Tc)	22mOhm @ 10A, 4.5V	1.4V @ 250µA	14nC @ 4.5V	1000pF @ 15V	2.6W (Ta), 23W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
CMS07NP03Q8-HF	Comchip Technology	MOSFET N/P-CH 30V 7A/5.3A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.3A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 6.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 15V, 645pF @ 25V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: -	Request a Quote	-	30V	7A (Ta), 5.3A (Ta)	28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V	2.5V @ 250µA	6nC @ 4.5V, 6.4nC @ 4.5V	572pF @ 15V, 645pF @ 25V	1.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PJQ5846_R2_00001	Panjit International Inc.	MOSFET 2N-CH 40V 9.5A/40A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V Power - Max: 1.7W (Ta), 32W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060B-8	パッケージ: -	Request a Quote	-	40V	9.5A (Ta), 40A (Tc)	10.5mOhm @ 8A, 10V	2.5V @ 250µA	22nC @ 10V	1258pF @ 25V	1.7W (Ta), 32W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	DFN5060B-8
SSM6N16FE-L3F	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.1A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: -	在庫23,130	-	20V	100mA (Ta)	3Ohm @ 10mA, 4V	1.1V @ 100µA	-	9.3pF @ 3V	150mW (Ta)	150°C	Surface Mount	SOT-563, SOT-666	ES6
DMP2200UFCL-7	Diodes Incorporated	MOSFET 2P-CH 20V 1.7A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V Power - Max: 660mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN1616-6 (Type F)	パッケージ: -	在庫9,000	-	20V	1.7A	200mOhm @ 2A, 4.5V	1.2V @ 250µA	2.2nC @ 4.5V	184pF @ 10V	660mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN1616-6 (Type F)
FDSS2407-SB82086P	onsemi	MOSFET 2N-CH 60V 3.3A 8-SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MMFTP6312D	Diotec Semiconductor	MOSFET SOT26 P -20V 0.115OHM FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: - Supplier Device Package: SOT-26	パッケージ: -	Request a Quote	-	-	2.3A	-	-	-	-	-	-	Surface Mount	-	SOT-26

NTUD3171PZT5G

ON Semiconductor

MOSFET 2P-CH 20V 0.2A SOT-963

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 15V
Power - Max: 125mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

パッケージ: SOT-963

在庫96,000

Logic Level Gate

20V

200mA

5 Ohm @ 100mA, 4.5V

1V @ 250µA

-

13.5pF @ 15V

125mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

SIA914DJ-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

パッケージ: PowerPAK? SC-70-6 Dual

在庫4,032

Logic Level Gate

20V

4.5A

53 mOhm @ 3.7A, 4.5V

1V @ 250µA

11.5nC @ 8V

400pF @ 10V

6.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

PMDXB950UPE

Nexperia USA Inc.

MOSFET 2P-CH 20V 0.5A 6DFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Power - Max: 265mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: 6-DFN (1.1x1)

パッケージ: 6-XFDFN Exposed Pad

在庫7,840

Logic Level Gate

20V

500mA

1.4 Ohm @ 500mA, 4.5V

950mV @ 250µA

2.1nC @ 4.5V

43pF @ 10V

265mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

6-DFN (1.1x1)

BUK9K6R2-40E,115

Nexperia USA Inc.

MOSFET 2N-CH 40V 40A LFPAK56D

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V
Power - Max: 68W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

パッケージ: SOT-1205, 8-LFPAK56

在庫6,144

Logic Level Gate

40V

40A

6 mOhm @ 25A, 10V

2.1V @ 1mA

35.4nC @ 10V

3281pF @ 25V

68W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

DMN3032LFDBQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 6.2A U-DFN2020

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

パッケージ: 6-UDFN Exposed Pad

在庫6,528

Standard

30V

6.2A

30 mOhm @ 5.8A, 10V

2V @ 250µA

10.6nC @ 10V

500pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMC2450UV-7

Diodes Incorporated

MOSFET N/P-CH 20V SOT563

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Power - Max: 450mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

パッケージ: SOT-563, SOT-666

在庫6,384

Standard

20V

1.03A, 700mA

480 mOhm @ 200mA, 5V

900mV @ 250µA

0.5nC @ 4.5V

37.1pF @ 10V

450mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

ALD1117PAL

Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8DIP

FET Type: 2 P-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫7,760

Standard

10.6V

-

1800 Ohm @ 5V

1V @ 1µA

-

3pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

PMDPB95XNE2X

Nexperia USA Inc.

MOSFET ARRAY 2NCH 30V DFN2020-6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 99 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V
Power - Max: 510mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-HUSON (2x2)

パッケージ: 6-UDFN Exposed Pad

在庫4,880

Standard

30V

2.7A (Ta)

99 mOhm @ 2.8A, 4.5V

1.25V @ 250µA

4.5nC @ 4.5V

258pF @ 15V

510mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

6-HUSON (2x2)

FDS6990A

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫85,080

Logic Level Gate

30V

7.5A

18 mOhm @ 7.5A, 10V

3V @ 250µA

17nC @ 5V

1235pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS7608S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/15A 8-PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 15A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

パッケージ: 8-PowerWDFN

在庫3,703,812

Logic Level Gate

30V

12A, 15A

10 mOhm @ 12A, 10V

3V @ 250µA

24nC @ 10V

1510pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

ECH8668-TL-H

ON Semiconductor

MOSFET N/P-CH 20V 7.5A/5A ECH8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A, 5A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

パッケージ: 8-SMD, Flat Lead

在庫3,424

Logic Level Gate

20V

7.5A, 5A

17 mOhm @ 4A, 4.5V

-

10.8nC @ 4.5V

1060pF @ 10V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

EM6K31T2R

Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A EMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

パッケージ: SOT-563, SOT-666

在庫60,000

Logic Level Gate

60V

250mA

2.4 Ohm @ 250mA, 10V

2.3V @ 1mA

-

15pF @ 25V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

SH8KA2GZETB

Rohm Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Power - Max: 2.8W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫23,598

-

30V

8A

28 mOhm @ 8A, 10V

2.5V @ 1mA

8nC @ 10V

330pF @ 15V

2.8W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SI4542DY

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 6A 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫33,324

Standard

30V

6A

28 mOhm @ 6A, 10V

3V @ 250µA

13nC @ 5V

830pF @ 15V

1W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI5908DC-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.4A 1206-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

パッケージ: 8-SMD, Flat Lead

在庫334,068

Logic Level Gate

20V

4.4A

40 mOhm @ 4.4A, 4.5V

1V @ 250µA

7.5nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

FDY1002PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.83A SC89-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA
Rds On (Max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Power - Max: 446mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

パッケージ: SOT-563, SOT-666

在庫1,400,040

Logic Level Gate

20V

830mA

500 mOhm @ 830mA, 4.5V

1V @ 250µA

3.1nC @ 4.5V

135pF @ 10V

446mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

FDMC8030

Fairchild/ON Semiconductor

MOSFET 2N-CH 40V 12A 8MLP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 20V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

パッケージ: 8-PowerWDFN

在庫75,720

Logic Level Gate

40V

12A

10 mOhm @ 12A, 10V

2.8V @ 250µA

30nC @ 10V

1975pF @ 20V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

SI6926ADQ-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 4.1A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫7,280

Logic Level Gate

20V

4.1A

30 mOhm @ 4.5A, 4.5V

1V @ 250µA

10.5nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

PJX8601_R1_00001

Panjit International Inc.

MOSFET N/P-CH 20V 0.5A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

パッケージ: -

在庫10,878

-

20V

500mA (Ta)

400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V

900mV @ 250µA, 1V @ 250µA

1.4nC @ 4.5V

67pF @ 10V, 38pF @ 10V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

CPH5616-TL-E

Sanyo

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

DMN52D0UV-13

Diodes Incorporated

MOSFET 2N-CH 50V 0.48A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Power - Max: 480mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

パッケージ: -

在庫30,000

-

50V

480mA (Ta)

2Ohm @ 5mA, 5V

1V @ 250µA

1.5nC @ 10V

39pF @ 25V

480mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FF2MR12KM1HOSA1

Infineon Technologies

SIC 2N-CH 1200V 500A AG-62MM

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MM

パッケージ: -

在庫30

-

1200V (1.2kV)

500A (Tc)

2.13mOhm @ 500A, 15V

5.15V @ 224mA

1340nC @ 15V

39700pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-62MM

FDY1002PZ-G

onsemi

MOSFET 2P-CH 20V 0.83A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Power - Max: 446mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

パッケージ: -

Request a Quote

Logic Level Gate

20V

830mA (Ta)

500mOhm @ 830mA, 4.5V

1V @ 250µA

3.1nC @ 4.5V

135pF @ 10V

446mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SIS932EDN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6A PPAK 1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Power - Max: 2.6W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

パッケージ: -

在庫8,529

-

30V

6A (Tc)

22mOhm @ 10A, 4.5V

1.4V @ 250µA

14nC @ 4.5V

1000pF @ 15V

2.6W (Ta), 23W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8 Dual

CMS07NP03Q8-HF

Comchip Technology

MOSFET N/P-CH 30V 7A/5.3A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 6.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 15V, 645pF @ 25V
Power - Max: 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: -

Request a Quote

-

30V

7A (Ta), 5.3A (Ta)

28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V

2.5V @ 250µA

6nC @ 4.5V, 6.4nC @ 4.5V

572pF @ 15V, 645pF @ 25V

1.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

PJQ5846_R2_00001

Panjit International Inc.

MOSFET 2N-CH 40V 9.5A/40A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V
Power - Max: 1.7W (Ta), 32W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: DFN5060B-8

パッケージ: -

Request a Quote

-

40V

9.5A (Ta), 40A (Tc)

10.5mOhm @ 8A, 10V

2.5V @ 250µA

22nC @ 10V

1258pF @ 25V

1.7W (Ta), 32W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

DFN5060B-8

SSM6N16FE-L3F

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A ES6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Power - Max: 150mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: -

在庫23,130

-

20V

100mA (Ta)

3Ohm @ 10mA, 4V

1.1V @ 100µA

-

9.3pF @ 3V

150mW (Ta)

150°C

Surface Mount

SOT-563, SOT-666

ES6

DMP2200UFCL-7

Diodes Incorporated

MOSFET 2P-CH 20V 1.7A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Power - Max: 660mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN1616-6 (Type F)

パッケージ: -

在庫9,000

-

20V

1.7A

200mOhm @ 2A, 4.5V

1.2V @ 250µA

2.2nC @ 4.5V

184pF @ 10V

660mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN1616-6 (Type F)

FDSS2407-SB82086P

onsemi

MOSFET 2N-CH 60V 3.3A 8-SOIC

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MMFTP6312D

Diotec Semiconductor

MOSFET SOT26 P -20V 0.115OHM

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: SOT-26

パッケージ: -

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-

2.3A

-

Surface Mount

-

SOT-26