ページ 77 - トランジスタ - FET、MOSFET - アレイ | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
ECH8601M-TL-H-P	ON Semiconductor	MOSFET 2N-CH FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	パッケージ: 8-SMD, Flat Lead	在庫7,936	Logic Level Gate, 2.5V Drive	24V	8A (Ta)	23 mOhm @ 4A, 4.5V	1.3V @ 1mA	7.5nC @ 4.5V	-	-	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
APTC80H29T1G	Microsemi Corporation	MOSFET 4N-CH 800V 15A SP1 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Power - Max: 156W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	パッケージ: SP1	在庫6,816	Standard	800V	15A	290 mOhm @ 7.5A, 10V	3.9V @ 1mA	90nC @ 10V	2254pF @ 25V	156W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
SI7945DP-T1-E3	Vishay Siliconix	MOSFET 2P-CH 30V 7A PPAK SO-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	パッケージ: PowerPAK? SO-8 Dual	在庫45,480	Logic Level Gate	30V	7A	20 mOhm @ 10.9A, 10V	3V @ 250µA	74nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI1917EDH-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 1A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 370 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 100µA (Min) Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 570mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫300,924	Logic Level Gate	12V	1A	370 mOhm @ 1A, 4.5V	450mV @ 100µA (Min)	2nC @ 4.5V	-	570mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
FDG6313N	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 0.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫50,400	Logic Level Gate	25V	500mA	450 mOhm @ 500mA, 4.5V	1.5V @ 250µA	2.3nC @ 4.5V	50pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
DMC3025LNS-7	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI333 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V Power - Max: 1.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	パッケージ: 8-PowerVDFN	在庫6,128	Standard	30V	7.2A (Ta), 6.8A (Ta)	25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V	2V @ 250µA	4.6nC @ 4.5V, 9.5nC @ 4.5V	500pF @ 15V, 1188pF @ 15V	1.2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8
NVJD4401NT1G	ON Semiconductor	MOSFET 2N-CH 20V 0.63A SC88 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫6,416	Logic Level Gate	20V	630mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
STS4DPF30L	STMicroelectronics	MOSFET 2P-CH 30V 4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫351,516	Standard	30V	4A	80 mOhm @ 2A, 10V	1V @ 250µA	16nC @ 5V	1350pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
TSM4925DCS RLG	TSC America Inc.	MOSFET, DUAL, P-CHANNEL, -30V, - FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫11,316	Standard	30V	7.1A (Ta)	25 mOhm @ 7.1A, 10V	3V @ 250µA	33nC @ 10V	1900pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
ALD210800SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 25 Ohm Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	パッケージ: 16-SOIC (0.154", 3.90mm Width)	在庫5,280	Logic Level Gate	10.6V	80mA	25 Ohm	20mV @ 10µA	-	15pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
AON6998	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 19A/26A DFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-DFN-EP (5x6)	パッケージ: 8-PowerWDFN	在庫3,680	Standard	30V	19A, 26A	5.2 mOhm @ 20A, 10V	2.2V @ 250µA	13nC @ 10V	820pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-DFN-EP (5x6)
UP0497900L	Panasonic Electronic Components	MOSFET N/P-CH 50V/30V SSMINI-6P FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V, 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 125mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMINI6-F1	パッケージ: SOT-563, SOT-666	在庫98,508	Logic Level Gate	50V, 30V	100mA	12 Ohm @ 10mA, 4V	1.5V @ 1µA	-	-	125mW	125°C (TJ)	Surface Mount	SOT-563, SOT-666	SSMINI6-F1
FDMB2308PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH MLP2X3 FET Type: 2 P-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-MLP (2x3)	パッケージ: 6-WDFN Exposed Pad	在庫44,232	Logic Level Gate	-	-	36 mOhm @ 5.7A, 4.5V	1.5V @ 250µA	30nC @ 10V	3030pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-MLP (2x3)
DMG6602SVT-7	Diodes Incorporated	MOSFET N/P-CH 30V TSOT23-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power - Max: 840mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6	パッケージ: SOT-23-6 Thin, TSOT-23-6	在庫100,080	Logic Level Gate	30V	3.4A, 2.8A	60 mOhm @ 3.1A, 10V	2.3V @ 250µA	13nC @ 10V	400pF @ 15V	840mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-23-6
MSCSM120VR1M16CTPAG	Microchip Technology	SIC 6N-CH 1200V 171A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 728W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	1200V (1.2kV)	171A (Tc)	16mOhm @ 80A, 20V	2.8V @ 6mA	464nC @ 20V	6040pF @ 1000V	728W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
6HN04SS-TL-H	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
AON6982	Alpha & Omega Semiconductor Inc.	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 15V Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-DFN (5x6)	パッケージ: -	Request a Quote	-	30V	50A (Tc), 85A (Tc)	5.2mOhm @ 20A, 10V	2.2V @ 250µA	12.8nC @ 10V	810pF @ 15V	3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-DFN (5x6)
IRFI4019H-117PXKMA1	Infineon Technologies	MOSFET 2N-CH 150V 8.7A TO220-5 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Power - Max: 18W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack, Formed Leads Supplier Device Package: TO-220-5 Full-Pak	パッケージ: -	在庫2,523	-	150V	8.7A (Tc)	95mOhm @ 5.2A, 10V	4.9V @ 50µA	20nC @ 10V	810pF @ 25V	18W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack, Formed Leads	TO-220-5 Full-Pak
UFB15C12E1BC3N	Qorvo	1200V/15A,SIC,FULL-BRIDGE,G3,E1B FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BUK7K17-80EX	Nexperia USA Inc.	MOSFET 2N-CH 80V 21A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 64W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	パッケージ: -	Request a Quote	-	80V	21A (Ta)	-	4V @ 1mA	-	-	64W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
FS03MR12A6MA1LBBPSA1	Infineon Technologies	SIC 6N-CH 1200V AG-HYBRIDD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V Vgs(th) (Max) @ Id: 5.55V @ 240mA Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-HYBRIDD-2	パッケージ: -	Request a Quote	-	1200V (1.2kV)	400A	3.7mOhm @ 400A, 15V	5.55V @ 240mA	1320nC @ 15V	42500pF @ 600V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-HYBRIDD-2
MTI145WX100GD-SMD	IXYS	MOSFET 6N-CH 100V 190A ISOPLUS FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL™ Supplier Device Package: ISOPLUS-DIL™	パッケージ: -	Request a Quote	-	100V	190A (Tc)	2.2mOhm @ 100A, 10V	3.5V @ 275µA	155nC @ 10V	11100pF @ 50V	-	-55°C ~ 175°C (TJ)	Surface Mount	ISOPLUS-DIL™	ISOPLUS-DIL™
DMN5L06VK-7-G	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	パッケージ: -	Request a Quote	-	50V	280mA (Ta)	2Ohm @ 50mA, 5V	1.2V @ 250µA	-	50pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FS33MR12W1M1HB11BPSA1	Infineon Technologies	SIC 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	パッケージ: -	在庫57	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
SSM6N68NU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	パッケージ: -	在庫3,981	Logic Level Gate, 1.8V Drive	30V	4A (Ta)	84mOhm @ 2A, 4.5V	1V @ 1mA	1.8nC @ 4.5V	129pF @ 15V	2W (Ta)	150°C	Surface Mount	6-WDFN Exposed Pad	6-µDFN (2x2)
AO6800L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 3.4A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	パッケージ: -	Request a Quote	-	30V	3.4A (Ta)	60mOhm @ 3.4A, 10V	1.5V @ 250µA	10nC @ 10V	235pF @ 15V	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
NX1029XH	Nexperia USA Inc.	MOSFET N/P-CH 50V 0.33A SOT666 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 170mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 36pF @ 25V Power - Max: 330mW (Ta), 1.09W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	パッケージ: -	Request a Quote	Logic Level Gate	50V	330mA (Ta), 170mA (Ta)	1.6Ohm @ 500mA, 10V, 7.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.6nC @ 4.5V, 0.35nC @ 5V	50pF @ 10V, 36pF @ 25V	330mW (Ta), 1.09W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
AOCA36116C	Alpha & Omega Semiconductor Inc.	MOSFET 24V 30A 10DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-XFDFN Supplier Device Package: 10-AlphaDFN (3.2x2.1)	パッケージ: -	在庫26,280	-	24V	30A (Ta)	3.1mOhm @ 5A, 4.5V	1.2V @ 250µA	35nC @ 4.5V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	10-XFDFN	10-AlphaDFN (3.2x2.1)

ECH8601M-TL-H-P

ON Semiconductor

MOSFET 2N-CH

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

パッケージ: 8-SMD, Flat Lead

在庫7,936

Logic Level Gate, 2.5V Drive

24V

8A (Ta)

23 mOhm @ 4A, 4.5V

1.3V @ 1mA

7.5nC @ 4.5V

-

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

APTC80H29T1G

Microsemi Corporation

MOSFET 4N-CH 800V 15A SP1

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Power - Max: 156W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

パッケージ: SP1

在庫6,816

Standard

800V

15A

290 mOhm @ 7.5A, 10V

3.9V @ 1mA

90nC @ 10V

2254pF @ 25V

156W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

SI7945DP-T1-E3

Vishay Siliconix

MOSFET 2P-CH 30V 7A PPAK SO-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

パッケージ: PowerPAK? SO-8 Dual

在庫45,480

Logic Level Gate

30V

7A

20 mOhm @ 10.9A, 10V

3V @ 250µA

74nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI1917EDH-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 1A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 370 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫300,924

Logic Level Gate

12V

1A

370 mOhm @ 1A, 4.5V

450mV @ 100µA (Min)

2nC @ 4.5V

-

570mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

FDG6313N

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.5A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫50,400

Logic Level Gate

25V

500mA

450 mOhm @ 500mA, 4.5V

1.5V @ 250µA

2.3nC @ 4.5V

50pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

DMC3025LNS-7

Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
Power - Max: 1.2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8

パッケージ: 8-PowerVDFN

在庫6,128

Standard

30V

7.2A (Ta), 6.8A (Ta)

25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V

2V @ 250µA

4.6nC @ 4.5V, 9.5nC @ 4.5V

500pF @ 15V, 1188pF @ 15V

1.2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8

NVJD4401NT1G

ON Semiconductor

MOSFET 2N-CH 20V 0.63A SC88

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫6,416

Logic Level Gate

20V

630mA

375 mOhm @ 630mA, 4.5V

1.5V @ 250µA

3nC @ 4.5V

46pF @ 20V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

STS4DPF30L

STMicroelectronics

MOSFET 2P-CH 30V 4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫351,516

Standard

30V

4A

80 mOhm @ 2A, 10V

1V @ 250µA

16nC @ 5V

1350pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

TSM4925DCS RLG

TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -30V, -

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫11,316

Standard

30V

7.1A (Ta)

25 mOhm @ 7.1A, 10V

3V @ 250µA

33nC @ 10V

1900pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

ALD210800SCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: 25 Ohm
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.154", 3.90mm Width)

在庫5,280

Logic Level Gate

10.6V

80mA

25 Ohm

20mV @ 10µA

-

15pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

AON6998

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 19A/26A DFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 26A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-DFN-EP (5x6)

パッケージ: 8-PowerWDFN

在庫3,680

Standard

30V

19A, 26A

5.2 mOhm @ 20A, 10V

2.2V @ 250µA

13nC @ 10V

820pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-DFN-EP (5x6)

UP0497900L

Panasonic Electronic Components

MOSFET N/P-CH 50V/30V SSMINI-6P

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V, 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 125mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMINI6-F1

パッケージ: SOT-563, SOT-666

在庫98,508

Logic Level Gate

50V, 30V

100mA

12 Ohm @ 10mA, 4V

1.5V @ 1µA

-

125mW

125°C (TJ)

Surface Mount

SOT-563, SOT-666

SSMINI6-F1

FDMB2308PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH MLP2X3

FET Type: 2 P-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-MLP (2x3)

パッケージ: 6-WDFN Exposed Pad

在庫44,232

Logic Level Gate

-

36 mOhm @ 5.7A, 4.5V

1.5V @ 250µA

30nC @ 10V

3030pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-MLP (2x3)

DMG6602SVT-7

Diodes Incorporated

MOSFET N/P-CH 30V TSOT23-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Power - Max: 840mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6

パッケージ: SOT-23-6 Thin, TSOT-23-6

在庫100,080

Logic Level Gate

30V

3.4A, 2.8A

60 mOhm @ 3.1A, 10V

2.3V @ 250µA

13nC @ 10V

400pF @ 15V

840mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-23-6

MSCSM120VR1M16CTPAG

Microchip Technology

SIC 6N-CH 1200V 171A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 728W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

Request a Quote

-

1200V (1.2kV)

171A (Tc)

16mOhm @ 80A, 20V

2.8V @ 6mA

464nC @ 20V

6040pF @ 1000V

728W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

6HN04SS-TL-H

Sanyo

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

AON6982

Alpha & Omega Semiconductor Inc.

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 15V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-DFN (5x6)

パッケージ: -

Request a Quote

-

30V

50A (Tc), 85A (Tc)

5.2mOhm @ 20A, 10V

2.2V @ 250µA

12.8nC @ 10V

810pF @ 15V

3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-DFN (5x6)

IRFI4019H-117PXKMA1

Infineon Technologies

MOSFET 2N-CH 150V 8.7A TO220-5

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Power - Max: 18W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5 Full Pack, Formed Leads
Supplier Device Package: TO-220-5 Full-Pak

パッケージ: -

在庫2,523

-

150V

8.7A (Tc)

95mOhm @ 5.2A, 10V

4.9V @ 50µA

20nC @ 10V

810pF @ 25V

18W (Tc)

-55°C ~ 150°C (TJ)

Through Hole

TO-220-5 Full Pack, Formed Leads

TO-220-5 Full-Pak

UFB15C12E1BC3N

Qorvo

1200V/15A,SIC,FULL-BRIDGE,G3,E1B

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

BUK7K17-80EX

Nexperia USA Inc.

MOSFET 2N-CH 80V 21A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

パッケージ: -

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-

80V

21A (Ta)

-

4V @ 1mA

-

64W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

FS03MR12A6MA1LBBPSA1

Infineon Technologies

SIC 6N-CH 1200V AG-HYBRIDD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-HYBRIDD-2

パッケージ: -

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-

1200V (1.2kV)

400A

3.7mOhm @ 400A, 15V

5.55V @ 240mA

1320nC @ 15V

42500pF @ 600V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-HYBRIDD-2

MTI145WX100GD-SMD

IXYS

MOSFET 6N-CH 100V 190A ISOPLUS

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL™
Supplier Device Package: ISOPLUS-DIL™

パッケージ: -

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100V

190A (Tc)

2.2mOhm @ 100A, 10V

3.5V @ 275µA

155nC @ 10V

11100pF @ 50V

-

-55°C ~ 175°C (TJ)

Surface Mount

ISOPLUS-DIL™

DMN5L06VK-7-G

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

パッケージ: -

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-

50V

280mA (Ta)

2Ohm @ 50mA, 5V

1.2V @ 250µA

-

50pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FS33MR12W1M1HB11BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

パッケージ: -

在庫57

-

1200V (1.2kV)

-

Chassis Mount

Module

AG-EASY1B

SSM6N68NU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-µDFN (2x2)

パッケージ: -

在庫3,981

Logic Level Gate, 1.8V Drive

30V

4A (Ta)

84mOhm @ 2A, 4.5V

1V @ 1mA

1.8nC @ 4.5V

129pF @ 15V

2W (Ta)

150°C

Surface Mount

6-WDFN Exposed Pad

6-µDFN (2x2)

AO6800L

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 3.4A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

パッケージ: -

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30V

3.4A (Ta)

60mOhm @ 3.4A, 10V

1.5V @ 250µA

10nC @ 10V

235pF @ 15V

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

NX1029XH

Nexperia USA Inc.

MOSFET N/P-CH 50V 0.33A SOT666

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 170mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, 7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 36pF @ 25V
Power - Max: 330mW (Ta), 1.09W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

パッケージ: -

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Logic Level Gate

50V

330mA (Ta), 170mA (Ta)

1.6Ohm @ 500mA, 10V, 7.5Ohm @ 100mA, 10V

2.1V @ 250µA

0.6nC @ 4.5V, 0.35nC @ 5V

50pF @ 10V, 36pF @ 25V

330mW (Ta), 1.09W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

AOCA36116C

Alpha & Omega Semiconductor Inc.

MOSFET 24V 30A 10DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Supplier Device Package: 10-AlphaDFN (3.2x2.1)

パッケージ: -

在庫26,280

-

24V

30A (Ta)

3.1mOhm @ 5A, 4.5V

1.2V @ 250µA

35nC @ 4.5V

-

3.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

10-XFDFN

10-AlphaDFN (3.2x2.1)