ページ 60 - トランジスタ - FET、MOSFET - RF | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - FET、MOSFET - RF

レコード 3,855
ページ  60/138
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説明
パッケージ
在庫
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BG5120KH6327XTSA1
Infineon Technologies

MOSFET N-CH DUAL 8V 20MA SOT363

  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 800MHz
  • Gain: 23dB
  • Voltage - Test: 5V
  • Current Rating: 20mA
  • Noise Figure: 1.1dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
パッケージ: 6-VSSOP, SC-88, SOT-363
在庫5,024
800MHz
23dB
5V
20mA
1.1dB
10mA
-
8V
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
BF999E6433HTMA1
Infineon Technologies

MOSFET N-CH 20V 30MA SOT-23

  • Transistor Type: N-Channel
  • Frequency: 45MHz
  • Gain: 27dB
  • Voltage - Test: 10V
  • Current Rating: 30mA
  • Noise Figure: 2.1dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫4,560
45MHz
27dB
10V
30mA
2.1dB
10mA
-
20V
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
hot NE3210S01-T1B
CEL

FET RF 4V 12GHZ S01

  • Transistor Type: HFET
  • Frequency: 12GHz
  • Gain: 13.5dB
  • Voltage - Test: 2V
  • Current Rating: 15mA
  • Noise Figure: 0.35dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD
  • Supplier Device Package: SMD
パッケージ: 4-SMD
在庫734,892
12GHz
13.5dB
2V
15mA
0.35dB
10mA
-
4V
4-SMD
SMD
NE5550779A-A
CEL

FET RF 30V 900MHZ 79A

  • Transistor Type: LDMOS
  • Frequency: 900MHz
  • Gain: 22dB
  • Voltage - Test: 7.5V
  • Current Rating: 2.1A
  • Noise Figure: -
  • Current - Test: 140mA
  • Power - Output: 38.5dBm
  • Voltage - Rated: 30V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A
パッケージ: 4-SMD, Flat Leads
在庫3,968
900MHz
22dB
7.5V
2.1A
-
140mA
38.5dBm
30V
4-SMD, Flat Leads
79A
2N5950_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 15MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫4,160
-
-
-
15mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MRF5S21100HSR3
NXP

FET RF 65V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.16GHz ~ 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.05A
  • Power - Output: 23W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
パッケージ: NI-780S
在庫5,408
2.16GHz ~ 2.17GHz
13.5dB
28V
-
-
1.05A
23W
65V
NI-780S
NI-780S
BF245C_D26Z
Fairchild/ON Semiconductor

JFET N-CH 30V 25MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫5,872
-
-
-
25mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PTVA104501EHV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫3,808
-
-
-
-
-
-
-
-
-
-
PXFC192207SHV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫7,600
-
-
-
-
-
-
-
-
-
-
PXFC191507FCV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,432
-
-
-
-
-
-
-
-
-
-
A2T07H310-24SR6
NXP

FET RF 2CH 70V 880MHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 880MHz
  • Gain: 18.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 47W
  • Voltage - Rated: 70V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
パッケージ: NI-1230-4LS2L
在庫7,536
880MHz
18.6dB
28V
-
-
700mA
47W
70V
NI-1230-4LS2L
NI-1230-4LS2L
BLC9G20LS-160PVY
Ampleon USA Inc.

BLC9G20LS-160PV/SOT1275/REELDP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,176
-
-
-
-
-
-
-
-
-
-
BLF8G24LS-100VJ
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT1244B

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: CDFM6
パッケージ: SOT-1244B
在庫2,512
2.3GHz ~ 2.4GHz
18dB
28V
-
-
900mA
25W
65V
SOT-1244B
CDFM6
PD57045S-E
STMicroelectronics

FET RF 65V 945MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
パッケージ: PowerSO-10 Exposed Bottom Pad
在庫6,384
945MHz
14.5dB
28V
5A
-
250mA
45W
65V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
MMRF1314HSR5
NXP

TRANS RF FET 1.4GHZ 1000W 52V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.4GHz
  • Gain: 17.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 1000W
  • Voltage - Rated: 105V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
パッケージ: NI-1230-4S
在庫2,544
1.4GHz
17.7dB
50V
-
-
500mA
1000W
105V
NI-1230-4S
NI-1230-4S
BLP8G10S-45PY
Ampleon USA Inc.

RF FET LDMOS 65V 20.8DB SOT12231

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 952.5MHz ~ 957.5MHz
  • Gain: 20.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 224mA
  • Power - Output: 2.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1223-1
  • Supplier Device Package: 4-HSOPF
パッケージ: SOT-1223-1
在庫3,264
952.5MHz ~ 957.5MHz
20.8dB
28V
-
-
224mA
2.5W
65V
SOT-1223-1
4-HSOPF
MMRF1009HR5
NXP

FET RF 110V 1.03GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 19.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 500W
  • Voltage - Rated: 110V
  • Package / Case: SOT-957A
  • Supplier Device Package: NI-780H-2L
パッケージ: SOT-957A
在庫7,296
1.03GHz
19.7dB
50V
-
-
200mA
500W
110V
SOT-957A
NI-780H-2L
A2T23H300-24SR6
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.3GHz
  • Gain: 14.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 66W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
パッケージ: NI-1230-4LS2L
在庫7,764
2.3GHz
14.9dB
28V
-
-
750mA
66W
65V
NI-1230-4LS2L
NI-1230-4LS2L
MRFE6VP5300GNR1
NXP

FET RF 2CH 133V 230MHZ TO-270 GW

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 27dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 300W
  • Voltage - Rated: 133V
  • Package / Case: TO-270BB
  • Supplier Device Package: TO-270 WB-4 Gull
パッケージ: TO-270BB
在庫3,632
230MHz
27dB
50V
-
-
100mA
300W
133V
TO-270BB
TO-270 WB-4 Gull
CGH40035F
Cree/Wolfspeed

FET RF 84V 4GHZ 440193

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 4GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 10.5A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 45W
  • Voltage - Rated: 84V
  • Package / Case: 440193
  • Supplier Device Package: 440193
パッケージ: 440193
在庫14,352
0Hz ~ 4GHz
14dB
28V
10.5A
-
500mA
45W
84V
440193
440193
BLC10G18XS-602AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 16dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 800 mA
  • Power - Output: 600W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
パッケージ: -
Request a Quote
1.805GHz ~ 1.88GHz
16dB
30 V
2.8µA
-
800 mA
600W
65 V
SOT-1258-4
SOT1258-4
TBB1005EMTL-E
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
C4H27W400AVZ
Ampleon USA Inc.

RF MOSFET 50V DFM6

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 2.3GHz ~ 2.7GHz
  • Gain: 15dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 400W
  • Voltage - Rated: 150 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
パッケージ: -
在庫162
2.3GHz ~ 2.7GHz
15dB
50 V
-
-
200 mA
400W
150 V
SOT-1275-1
DFM6
BLC2425M9XS250Z
Ampleon USA Inc.

RF MOSFET SOT1270-1

  • Transistor Type: -
  • Frequency: 2.4GHz ~ 2.5GHz
  • Gain: 18dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 32 V
  • Package / Case: SOT-1270-1
  • Supplier Device Package: SOT-1270-1
パッケージ: -
Request a Quote
2.4GHz ~ 2.5GHz
18dB
-
-
-
-
-
32 V
SOT-1270-1
SOT-1270-1
CGH35060P2
MACOM Technology Solutions

RF MOSFET GAN HEMT 28V 440206

  • Transistor Type: GaN HEMT
  • Frequency: 3.1GHz ~ 3.5GHz
  • Gain: 11.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 60W
  • Voltage - Rated: 120 V
  • Package / Case: 440206
  • Supplier Device Package: 440206
パッケージ: -
Request a Quote
3.1GHz ~ 3.5GHz
11.5dB
28 V
-
-
200 mA
60W
120 V
440206
440206
IGT8292M50
Integra Technologies Inc.

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫30
-
-
-
-
-
-
-
-
-
-
MWT-PH33F
CML Microcircuits

RF MOSFET PHEMT FET 3V CHIP

  • Transistor Type: pHEMT FET
  • Frequency: 26GHz
  • Gain: 14dB
  • Voltage - Test: 3 V
  • Current Rating: 90mA
  • Noise Figure: -
  • Current - Test: 1 mA
  • Power - Output: 24dBm
  • Voltage - Rated: -
  • Package / Case: Die
  • Supplier Device Package: Chip
パッケージ: -
在庫750
26GHz
14dB
3 V
90mA
-
1 mA
24dBm
-
Die
Chip
PXAC182908FV-V1-R250
MACOM Technology Solutions

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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