ページ 63 - トランジスタ - FET、MOSFET - RF | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - FET、MOSFET - RF

レコード 3,855
ページ  63/138
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部品番号
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説明
パッケージ
在庫
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTF140451F V1
Infineon Technologies

IC FET RF LDMOS 45W H-31265

  • Transistor Type: LDMOS
  • Frequency: 1.5GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-31265-2
パッケージ: 2-Flatpack, Fin Leads, Flanged
在庫3,216
1.5GHz
18dB
28V
1µA
-
550mA
45W
65V
2-Flatpack, Fin Leads, Flanged
H-31265-2
BG3123E6327HTSA1
Infineon Technologies

MOSFET N-CH DUAL 8V 25MA SOT-363

  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 800MHz
  • Gain: 25dB
  • Voltage - Test: 5V
  • Current Rating: 25mA, 20mA
  • Noise Figure: 1.8dB
  • Current - Test: 14mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
パッケージ: 6-VSSOP, SC-88, SOT-363
在庫3,424
800MHz
25dB
5V
25mA, 20mA
1.8dB
14mA
-
8V
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
MAGX-000035-01500S
M/A-Com Technology Solutions

TRANSISTOR GAN 3.5GHZ 15W

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 3GHz
  • Gain: 15.5dB
  • Voltage - Test: 50V
  • Current Rating: 800mA
  • Noise Figure: -
  • Current - Test: 15mA
  • Power - Output: 500mW
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,864
0Hz ~ 3GHz
15.5dB
50V
800mA
-
15mA
500mW
65V
-
-
MRF7S35120HSR3
NXP

FET RF 65V 3.5GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 3.1GHz ~ 3.5GHz
  • Gain: 12dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 120W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
パッケージ: NI-780S
在庫4,128
3.1GHz ~ 3.5GHz
12dB
32V
-
-
150mA
120W
65V
NI-780S
NI-780S
PD84008S-E
STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

  • Transistor Type: N-Channel
  • Frequency: 870MHz
  • Gain: 16.2dB
  • Voltage - Test: 7.5V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 2W
  • Voltage - Rated: 25V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
パッケージ: PowerSO-10 Exposed Bottom Pad
在庫3,264
870MHz
16.2dB
7.5V
7A
-
250mA
2W
25V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
hot MRF6V2010NBR5
NXP

FET RF 110V 220MHZ TO-272-2

  • Transistor Type: LDMOS
  • Frequency: 220MHz
  • Gain: 23.9dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 10W
  • Voltage - Rated: 110V
  • Package / Case: TO-272BC
  • Supplier Device Package: TO-272-2
パッケージ: TO-272BC
在庫5,760
220MHz
23.9dB
50V
-
-
30mA
10W
110V
TO-272BC
TO-272-2
hot MRFE6S9160HR3
NXP

FET RF 66V 880MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 35W
  • Voltage - Rated: 66V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
パッケージ: NI-780
在庫7,368
880MHz
21dB
28V
-
-
1.2A
35W
66V
NI-780
NI-780
PXFC211507SCV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,368
-
-
-
-
-
-
-
-
-
-
VRF157FL
Microsemi Corporation

MOSFET RF PWR N-CH 50V 600W T2

  • Transistor Type: N-Channel
  • Frequency: 80MHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: 4mA
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 600W
  • Voltage - Rated: 170V
  • Package / Case: T2
  • Supplier Device Package: T2
パッケージ: T2
在庫4,656
80MHz
21dB
50V
4mA
-
800mA
600W
170V
T2
T2
BLF0910H6L500U
Ampleon USA Inc.

BLF0910H6L500/SOT502/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,736
-
-
-
-
-
-
-
-
-
-
BLF8G22LS-270V,112
Ampleon USA Inc.

RF FET LDMOS 65V 17.3DB SOT1244B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.4A
  • Power - Output: 80W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: CDFM6
パッケージ: SOT-1244B
在庫6,112
2.11GHz ~ 2.17GHz
17.3dB
28V
-
-
2.4A
80W
65V
SOT-1244B
CDFM6
BLC9G20LS-240PVY
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT12753

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 240W
  • Voltage - Rated: 65V
  • Package / Case: SOT1275-3
  • Supplier Device Package: SOT1275-3
パッケージ: SOT1275-3
在庫3,424
1.81GHz ~ 1.88GHz
18dB
28V
-
-
1.6A
240W
65V
SOT1275-3
SOT1275-3
BLC8G27LS-160AVU
Ampleon USA Inc.

RF FET LDMOS 65V 14.3DB SOT12751

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.69GHz
  • Gain: 14.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 31.6W
  • Voltage - Rated: 65V
  • Package / Case: SOT1275-1
  • Supplier Device Package: 6-DFM
パッケージ: SOT1275-1
在庫3,344
2.5GHz ~ 2.69GHz
14.3dB
28V
-
-
250mA
31.6W
65V
SOT1275-1
6-DFM
BLF8G22LS-220J
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.62A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
パッケージ: SOT-502B
在庫2,208
2.11GHz ~ 2.17GHz
17dB
28V
-
-
1.62A
55W
65V
SOT-502B
SOT502B
hot MRF8P26080HSR3
NXP

FET RF 2CH 65V 2.62GHZ NI780S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.62GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 14W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
パッケージ: NI-780S-4
在庫54,024
2.62GHz
15dB
28V
-
-
300mA
14W
65V
NI-780S-4
NI-780S-4
BLC8G27LS-60AVY
Ampleon USA Inc.

TRANS RF 60W LDMOS DFM6F

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: SOT1275-3
  • Supplier Device Package: SOT1275-3
パッケージ: SOT1275-3
在庫5,280
-
-
-
-
-
-
-
-
SOT1275-3
SOT1275-3
LET9045C
STMicroelectronics

MOSFET N-CH 80V 9A M-250

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 17.7dB
  • Voltage - Test: 28V
  • Current Rating: 9A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 59W
  • Voltage - Rated: 80V
  • Package / Case: M243
  • Supplier Device Package: M243
パッケージ: M243
在庫6,080
960MHz
17.7dB
28V
9A
-
300mA
59W
80V
M243
M243
hot MRFE6VP100HR5
NXP

FET RF 2CH 133V 512MHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 512MHz
  • Gain: 26dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 100W
  • Voltage - Rated: 133V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
パッケージ: NI-780-4
在庫6,576
512MHz
26dB
50V
-
-
100mA
100W
133V
NI-780-4
NI-780-4
BLF6G13LS-250P,112
Ampleon USA Inc.

RF FET LDMOS 100V 17DB SOT1121B

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 250W
  • Voltage - Rated: 100V
  • Package / Case: SOT-1121B
  • Supplier Device Package: CDFM4
パッケージ: SOT-1121B
在庫6,372
1.3GHz
17dB
50V
-
-
100mA
250W
100V
SOT-1121B
CDFM4
PTVA120251EA-V2-R0
MACOM Technology Solutions

RF MOSFET LDMOS 50V H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 18dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50 mA
  • Power - Output: 25W
  • Voltage - Rated: 105 V
  • Package / Case: H-36265-2
  • Supplier Device Package: H-36265-2
パッケージ: -
在庫6
1.2GHz ~ 1.4GHz
18dB
50 V
-
-
50 mA
25W
105 V
H-36265-2
H-36265-2
CGHV59350P
MACOM Technology Solutions

RF MOSFET GAN HEMT 50V 440218

  • Transistor Type: GaN HEMT
  • Frequency: 5.2GHz ~ 5.9GHz
  • Gain: 10.7dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1 A
  • Power - Output: 350W
  • Voltage - Rated: 150 V
  • Package / Case: 440218
  • Supplier Device Package: 440218
パッケージ: -
Request a Quote
5.2GHz ~ 5.9GHz
10.7dB
50 V
-
-
1 A
350W
150 V
440218
440218
BLC10G27XS-400AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 28V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 13.3dB
  • Voltage - Test: 28 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 400W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
パッケージ: -
Request a Quote
2.496GHz ~ 2.69GHz
13.3dB
28 V
2.8µA
-
-
400W
65 V
SOT-1258-4
SOT1258-4
PTFC261402FC-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 18dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900 mA
  • Power - Output: 28W
  • Voltage - Rated: 65 V
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
2.69GHz
18dB
28 V
-
-
900 mA
28W
65 V
-
-
PTAB182002FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 15.5dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 520 mA
  • Power - Output: 29W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
パッケージ: -
Request a Quote
1.88GHz
15.5dB
28 V
10µA
-
520 mA
29W
65 V
H-37248-4
H-37248-4
A2T14H450-23NR6
NXP

RF MOSFET LDMOS 31V OM1230-42

  • Transistor Type: LDMOS
  • Frequency: 1.452GHz ~ 1.511GHz
  • Gain: 18.8dB
  • Voltage - Test: 31 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1 A
  • Power - Output: -
  • Voltage - Rated: 65 V
  • Package / Case: OM-1230-4L2S
  • Supplier Device Package: OM-1230-4L2S
パッケージ: -
Request a Quote
1.452GHz ~ 1.511GHz
18.8dB
31 V
10µA
-
1 A
-
65 V
OM-1230-4L2S
OM-1230-4L2S
PTFB211503FL-V2-R0
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-34288-4

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2 A
  • Power - Output: 32W
  • Voltage - Rated: 65 V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-34288-4/2
パッケージ: -
Request a Quote
2.17GHz
18dB
30 V
-
-
1.2 A
32W
65 V
2-Flatpack, Fin Leads, Flanged
H-34288-4/2
MRF173CQ
MACOM Technology Solutions

RF MOSFET 28V 316-01

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 150MHz
  • Gain: 13dB
  • Voltage - Test: 28 V
  • Current Rating: 9A
  • Noise Figure: 1.5dB
  • Current - Test: 50 mA
  • Power - Output: 80W
  • Voltage - Rated: 65 V
  • Package / Case: 316-01
  • Supplier Device Package: 316-01, Style 2
パッケージ: -
Request a Quote
150MHz
13dB
28 V
9A
1.5dB
50 mA
80W
65 V
316-01
316-01, Style 2
BLC9G21LS-60AVZ
Ampleon USA Inc.

RF MOSFET LDMOS 28V DFM6

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 2.2GHz
  • Gain: 17.5dB
  • Voltage - Test: 28 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 60W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
パッケージ: -
在庫120
1.805GHz ~ 2.2GHz
17.5dB
28 V
1.4µA
-
100 mA
60W
65 V
SOT-1275-1
DFM6