ページ 122 - トランジスタ - IGBT - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - IGBT - シングル

レコード 4,424
ページ  122/158
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説明
パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IGP03N120H2XKSA1
Infineon Technologies

IGBT 1200V 9.6A 62.5W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 9.6A
  • Current - Collector Pulsed (Icm): 9.9A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
  • Power - Max: 62.5W
  • Switching Energy: 290µJ
  • Input Type: Standard
  • Gate Charge: 22nC
  • Td (on/off) @ 25°C: 9.2ns/281ns
  • Test Condition: 800V, 3A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
パッケージ: TO-220-3
在庫7,888
1200V
9.6A
9.9A
2.8V @ 15V, 3A
62.5W
290µJ
Standard
22nC
9.2ns/281ns
800V, 3A, 82 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
hot IRG4BC30FD-S
Infineon Technologies

IGBT 600V 31A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 630µJ (on), 1.39mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 42ns/230ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫240,000
600V
31A
120A
1.8V @ 15V, 17A
100W
630µJ (on), 1.39mJ (off)
Standard
51nC
42ns/230ns
480V, 17A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot TIG052TS-TL-E
ON Semiconductor

IGBT 400V 8TSSOP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 5.5V @ 2.5V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
パッケージ: 8-TSSOP (0.173", 4.40mm Width)
在庫311,040
400V
-
150A
5.5V @ 2.5V, 150A
-
-
Standard
-
-
-
-
150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IXGA16N60B2
IXYS

IGBT 600V 40A 150W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
  • Power - Max: 150W
  • Switching Energy: 160µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 18ns/73ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,360
600V
40A
100A
1.95V @ 15V, 12A
150W
160µJ (on), 120µJ (off)
Standard
24nC
18ns/73ns
400V, 12A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
FGB30N6S2
Fairchild/ON Semiconductor

IGBT 600V 45A 167W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 108A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 167W
  • Switching Energy: 55µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: 6ns/40ns
  • Test Condition: 390V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,216
600V
45A
108A
2.5V @ 15V, 12A
167W
55µJ (on), 100µJ (off)
Standard
23nC
6ns/40ns
390V, 12A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
hot FGH40N6S2
Fairchild/ON Semiconductor

IGBT 600V 75A 290W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
  • Power - Max: 290W
  • Switching Energy: 115µJ (on), 195µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 8ns/35ns
  • Test Condition: 390V, 20A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫103,464
600V
75A
180A
2.7V @ 15V, 20A
290W
115µJ (on), 195µJ (off)
Standard
35nC
8ns/35ns
390V, 20A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IKW50N65F5AXKSA1
Infineon Technologies

IGBT 650V 80A 305W PG-TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 270W
  • Switching Energy: 490µJ (on), 140µJ (off)
  • Input Type: Standard
  • Gate Charge: 108nC
  • Td (on/off) @ 25°C: 21ns/156ns
  • Test Condition: 400V, 25A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 77ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: TO-247-3
在庫3,600
650V
80A
150A
2.1V @ 15V, 50A
270W
490µJ (on), 140µJ (off)
Standard
108nC
21ns/156ns
400V, 25A, 12 Ohm, 15V
77ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IRG4BC20KDSTRRP
Infineon Technologies

IGBT 600V 16A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 32A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 340µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 34nC
  • Td (on/off) @ 25°C: 54ns/180ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫24,792
600V
16A
32A
2.8V @ 15V, 9A
60W
340µJ (on), 300µJ (off)
Standard
34nC
54ns/180ns
480V, 9A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXBF42N300
IXYS

IGBT 3000V TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 380A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
  • Power - Max: 240W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 72ns/445ns
  • Test Condition: 1500V, 42A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 1.7µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-4, Isolated
  • Supplier Device Package: ISOPLUS i4-PAC?
パッケージ: i4-Pac?-4, Isolated
在庫4,848
3000V
60A
380A
3V @ 15V, 42A
240W
-
Standard
200nC
72ns/445ns
1500V, 42A, 20 Ohm, 15V
1.7µs
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-4, Isolated
ISOPLUS i4-PAC?
IXBT12N300HV
IXYS

IGBT 3000V 30A 160W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: 64ns/180ns
  • Test Condition: 1250V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 1.4µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫2,144
3000V
30A
100A
3.2V @ 15V, 12A
160W
-
Standard
62nC
64ns/180ns
1250V, 12A, 10 Ohm, 15V
1.4µs
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXGR72N60C3D1
IXYS

IGBT 600V 75A 200W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 200W
  • Switching Energy: 1.03mJ (on), 480µJ (off)
  • Input Type: Standard
  • Gate Charge: 175nC
  • Td (on/off) @ 25°C: 27ns/77ns
  • Test Condition: 480V, 50A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
パッケージ: ISOPLUS247?
在庫7,216
600V
75A
400A
2.7V @ 15V, 50A
200W
1.03mJ (on), 480µJ (off)
Standard
175nC
27ns/77ns
480V, 50A, 2 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGH12N100
IXYS

IGBT 1000V 24A 100W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 100ns/850ns
  • Test Condition: 800V, 12A, 120 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫3,904
1000V
24A
48A
3.5V @ 15V, 12A
100W
2.5mJ (off)
Standard
65nC
100ns/850ns
800V, 12A, 120 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
APT70GR65B
Microsemi Corporation

IGBT 650V 134A 595W TO-247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 134A
  • Current - Collector Pulsed (Icm): 260A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A
  • Power - Max: 595W
  • Switching Energy: 1.51mJ (on), 1.46mJ (off)
  • Input Type: Standard
  • Gate Charge: 305nC
  • Td (on/off) @ 25°C: 19ns/170ns
  • Test Condition: 433V, 70A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫7,040
650V
134A
260A
2.4V @ 15V, 70A
595W
1.51mJ (on), 1.46mJ (off)
Standard
305nC
19ns/170ns
433V, 70A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot IRG4BC20KDPBF
Infineon Technologies

IGBT 600V 16A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 32A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 340µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 34nC
  • Td (on/off) @ 25°C: 54ns/180ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫59,460
600V
16A
32A
2.8V @ 15V, 9A
60W
340µJ (on), 300µJ (off)
Standard
34nC
54ns/180ns
480V, 9A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot STGW60H65DRF
STMicroelectronics

IGBT 650V 120A 420W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
  • Power - Max: 420W
  • Switching Energy: 940µJ (on), 1.06mJ (off)
  • Input Type: Standard
  • Gate Charge: 217nC
  • Td (on/off) @ 25°C: 85ns/178ns
  • Test Condition: 400V, 60A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 19ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫12,432
650V
120A
240A
2.4V @ 15V, 60A
420W
940µJ (on), 1.06mJ (off)
Standard
217nC
85ns/178ns
400V, 60A, 10 Ohm, 15V
19ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGFW80V60F
STMicroelectronics

IGBT 600V 120A 79W TO-3PF

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
  • Power - Max: 79W
  • Switching Energy: 1.8mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 448nC
  • Td (on/off) @ 25°C: 60ns/220ns
  • Test Condition: 400V, 80A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
パッケージ: TO-3P-3 Full Pack
在庫6,528
600V
120A
240A
2.3V @ 15V, 80A
79W
1.8mJ (on), 1mJ (off)
Standard
448nC
60ns/220ns
400V, 80A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
hot STGWT60V60DF
STMicroelectronics

IGBT 600V 80A 375W TO3P

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 375W
  • Switching Energy: 750µJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 334nC
  • Td (on/off) @ 25°C: 60ns/208ns
  • Test Condition: 400V, 60A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: -
パッケージ: TO-3P-3, SC-65-3
在庫5,328
600V
80A
240A
2.3V @ 15V, 60A
375W
750µJ (on), 550µJ (off)
Standard
334nC
60ns/208ns
400V, 60A, 4.7 Ohm, 15V
74ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
-
FGH40T100SMD_F155
Fairchild/ON Semiconductor

IGBT 1000V 80A 333W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 333W
  • Switching Energy: 2.35mJ (on), 1.15mJ (off)
  • Input Type: Standard
  • Gate Charge: 398nC
  • Td (on/off) @ 25°C: 29ns/285ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 78ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫7,476
1000V
80A
120A
2.3V @ 15V, 40A
333W
2.35mJ (on), 1.15mJ (off)
Standard
398nC
29ns/285ns
600V, 40A, 10 Ohm, 15V
78ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IKW30N60DTPXKSA1
Infineon Technologies

IGBT 600V 53A 200W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 53A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 710µJ (on), 420µJ (off)
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 15ns/179ns
  • Test Condition: 400V, 30A, 10.5 Ohm, 15V
  • Reverse Recovery Time (trr): 76ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: TO-247-3
在庫7,896
600V
53A
90A
1.8V @ 15V, 30A
200W
710µJ (on), 420µJ (off)
Standard
130nC
15ns/179ns
400V, 30A, 10.5 Ohm, 15V
76ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SIGC12T60NCX1SA5
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 10A, 27Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
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600 V
10 A
30 A
2.5V @ 15V, 10A
-
-
Standard
-
21ns/110ns
300V, 10A, 27Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
LGB18N40ATH
Littelfuse Inc.

IGBT 430V 18A TO263

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430 V
  • Current - Collector (Ic) (Max): 18 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: 115 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: 0.7µs/4µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
パッケージ: -
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430 V
18 A
50 A
-
115 W
-
Logic
-
0.7µs/4µs
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
FGD3325G2-F085V
onsemi

ECOSPARK 2 330MJ, 250V, N

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 250 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 800ns/5.1µs
  • Test Condition: 5V, 1kOhm
  • Reverse Recovery Time (trr): 1.2 µs
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
パッケージ: -
在庫11,793
250 V
41 A
-
1.25V @ 4V, 6A
150 W
-
Logic
21 nC
800ns/5.1µs
5V, 1kOhm
1.2 µs
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
SIGC25T60UNX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 16ns/122ns
  • Test Condition: 400V, 30A, 1.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
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600 V
30 A
90 A
3.15V @ 15V, 30A
-
-
Standard
-
16ns/122ns
400V, 30A, 1.8Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IRGC50B60KB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
600 V
50 A
-
1.35V @ 15V, 10A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IXYK110N120B4
IXYS

IGBT 1200V 110A GEN4 XPT TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 340 A
  • Current - Collector Pulsed (Icm): 800 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
  • Power - Max: 1360 W
  • Switching Energy: 3.6mJ (on), 3.85mJ (off)
  • Input Type: Standard
  • Gate Charge: 340 nC
  • Td (on/off) @ 25°C: 45ns/390ns
  • Test Condition: 600V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 50 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXYK)
パッケージ: -
在庫39
1200 V
340 A
800 A
2.1V @ 15V, 110A
1360 W
3.6mJ (on), 3.85mJ (off)
Standard
340 nC
45ns/390ns
600V, 50A, 2Ohm, 15V
50 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXYK)
RGWSX2TS65DGC13
Rohm Semiconductor

IGBT TRENCH FS 650V 104A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 104 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
  • Power - Max: 288 W
  • Switching Energy: 1.43mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 140 nC
  • Td (on/off) @ 25°C: 55ns/180ns
  • Test Condition: 400V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 88 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
パッケージ: -
在庫1,800
650 V
104 A
180 A
2V @ 15V, 60A
288 W
1.43mJ (on), 1.2mJ (off)
Standard
140 nC
55ns/180ns
400V, 60A, 10Ohm, 15V
88 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
IXYQ30N65B3D1
IXYS

IGBT PT 650V 70A TO3P

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 70 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 270 W
  • Switching Energy: 830µJ (on), 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 45 nC
  • Td (on/off) @ 25°C: 17ns/87ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 38 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
パッケージ: -
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650 V
70 A
160 A
2.1V @ 15V, 30A
270 W
830µJ (on), 640µJ (off)
Standard
45 nC
17ns/87ns
400V, 30A, 10Ohm, 15V
38 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
NCG225L75NF8M1
onsemi

IGBT 750V 225A FS4 DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 750 V
  • Current - Collector (Ic) (Max): 225 A
  • Current - Collector Pulsed (Icm): 675 A
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 200A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 690 nC
  • Td (on/off) @ 25°C: 104ns/122ns
  • Test Condition: 400V, 225A, 2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Wafer
パッケージ: -
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750 V
225 A
675 A
1.75V @ 15V, 200A
-
-
Standard
690 nC
104ns/122ns
400V, 225A, 2Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Wafer