トランジスタ - IGBT - シングル

HGT1S7N60A4DS

Fairchild/ON Semiconductor

IGBT 600V 34A 125W TO263AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 34A
• Current - Collector Pulsed (Icm): 56A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
• Power - Max: 125W
• Switching Energy: 55µJ (on), 60µJ (off)
• Input Type: Standard
• Gate Charge: 37nC
• Td (on/off) @ 25°C: 11ns/100ns
• Test Condition: 390V, 7A, 25 Ohm, 15V
• Reverse Recovery Time (trr): 34ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXGP7N60C

IXYS

IGBT 600V 14A 54W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
• Power - Max: 54W
• Switching Energy: 70µJ (on), 120µJ (off)
• Input Type: Standard
• Gate Charge: 25nC
• Td (on/off) @ 25°C: 9ns/65ns
• Test Condition: 480V, 7A, 22 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: TO-220-3

AIKQ120N60CTXKSA1

Infineon Technologies

IC DISCRETE 600V TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 160A
• Current - Collector Pulsed (Icm): 480A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
• Power - Max: 833W
• Switching Energy: 4.1mJ (on), 2.8mJ (off)
• Input Type: Standard
• Gate Charge: 772nC
• Td (on/off) @ 25°C: 33ns/310ns
• Test Condition: 400V, 120A, 3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-46

パッケージ: TO-247-3

IGB03N120H2ATMA1

Infineon Technologies

IGBT 1200V 9.6A 62.5W TO263-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 9.6A
• Current - Collector Pulsed (Icm): 9.9A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
• Power - Max: 62.5W
• Switching Energy: 290µJ
• Input Type: Standard
• Gate Charge: 22nC
• Td (on/off) @ 25°C: 9.2ns/281ns
• Test Condition: 800V, 3A, 82 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IGB01N120H2ATMA1

Infineon Technologies

IGBT 1200V 3.2A 28W TO263-3-2

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 3.2A
• Current - Collector Pulsed (Icm): 3.5A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
• Power - Max: 28W
• Switching Energy: 140µJ
• Input Type: Standard
• Gate Charge: 8.6nC
• Td (on/off) @ 25°C: 13ns/370ns
• Test Condition: 800V, 1A, 241 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXGR45N120

IXYS

IGBT 1200V 90A ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

パッケージ: ISOPLUS247?

IXA37IF1200HJ

IXYS

IGBT 1200V 58A 195W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 58A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
• Power - Max: 195W
• Switching Energy: 3.8mJ (on), 4.1mJ (off)
• Input Type: Standard
• Gate Charge: 106nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 35A, 27 Ohm, 15V
• Reverse Recovery Time (trr): 350ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

パッケージ: ISOPLUS247?

IXYH40N65C3D1

IXYS

IGBT 650V 80A 300W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
• Power - Max: 300W
• Switching Energy: 830µJ (on), 360µJ (off)
• Input Type: Standard
• Gate Charge: 66nC
• Td (on/off) @ 25°C: 23ns/110ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 120ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

パッケージ: TO-247-3

FGH60N60SFTU

Fairchild/ON Semiconductor

IGBT 600V 120A 378W TO247

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 120A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
• Power - Max: 378W
• Switching Energy: 1.79mJ (on), 670µJ (off)
• Input Type: Standard
• Gate Charge: 198nC
• Td (on/off) @ 25°C: 22ns/134ns
• Test Condition: 400V, 60A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

パッケージ: TO-247-3

IXGP70N33TBM-A

IXYS

IGBT 330V TO-220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 330V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: TO-220-3

NGTB15N120IHRWG

ON Semiconductor

IGBT 1200V 15A TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Power - Max: 333W
• Switching Energy: 340µJ (off)
• Input Type: Standard
• Gate Charge: 160nC
• Td (on/off) @ 25°C: -/170ns
• Test Condition: 600V, 15A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

パッケージ: TO-247-3

STGWA40S120DF3

STMicroelectronics

IGBT 1200V 40A TO247-3L

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
• Power - Max: 468W
• Switching Energy: 1.43mJ (on), 3.83mJ (off)
• Input Type: Standard
• Gate Charge: 129nC
• Td (on/off) @ 25°C: 35ns/148ns
• Test Condition: 600V, 40A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 355ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

パッケージ: TO-247-3

APT85GR120B2

Microsemi Corporation

IGBT 1200V 170A 962W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 170A
• Current - Collector Pulsed (Icm): 340A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
• Power - Max: 962W
• Switching Energy: 6mJ (on), 3.8mJ (off)
• Input Type: Standard
• Gate Charge: 660nC
• Td (on/off) @ 25°C: 43ns/300ns
• Test Condition: 600V, 85A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: T-MAX?

パッケージ: TO-247-3

APT50GN120L2DQ2G

Microsemi Corporation

IGBT 1200V 134A 543W TO264

• IGBT Type: NPT, Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 134A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Power - Max: 543W
• Switching Energy: 4495µJ (off)
• Input Type: Standard
• Gate Charge: 315nC
• Td (on/off) @ 25°C: 28ns/320ns
• Test Condition: 800V, 50A, 2.2 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: -

パッケージ: TO-264-3, TO-264AA

IXXK160N65B4

IXYS

IGBT 650V 310A 940W TO264

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 310A
• Current - Collector Pulsed (Icm): 860A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
• Power - Max: 940W
• Switching Energy: 3.3mJ (on), 1.88mJ (off)
• Input Type: Standard
• Gate Charge: 425nC
• Td (on/off) @ 25°C: 52ns/220ns
• Test Condition: 400V, 80A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXXK)

パッケージ: TO-264-3, TO-264AA

IXYA50N65C3

IXYS

IGBT 650V 130A 600W TO263

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 130A
• Current - Collector Pulsed (Icm): 250A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
• Power - Max: 600W
• Switching Energy: 1.3mJ (on), 370µJ (off)
• Input Type: Standard
• Gate Charge: 80nC
• Td (on/off) @ 25°C: 22ns/80ns
• Test Condition: 400V, 36A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FGH30N60LSDTU

Fairchild/ON Semiconductor

IGBT 600V 60A 480W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
• Power - Max: 480W
• Switching Energy: 1.1mJ (on), 21mJ (off)
• Input Type: Standard
• Gate Charge: 225nC
• Td (on/off) @ 25°C: 18ns/250ns
• Test Condition: 400V, 30A, 6.8 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

パッケージ: TO-247-3

STGW40V60DLF

STMicroelectronics

IGBT 600V 80A 283W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Power - Max: 283W
• Switching Energy: 411µJ (off)
• Input Type: Standard
• Gate Charge: 226nC
• Td (on/off) @ 25°C: -/208ns
• Test Condition: 400V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

パッケージ: TO-247-3

NGTG30N60FWG

ON Semiconductor

IGBT 600V 60A 167W TO247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
• Power - Max: 167W
• Switching Energy: 650µJ (on), 650µJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 81ns/190ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

パッケージ: TO-247-3

IXGH32N170

IXYS

IGBT 1700V 75A 350W TO247AD

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
• Power - Max: 350W
• Switching Energy: 11mJ (off)
• Input Type: Standard
• Gate Charge: 155nC
• Td (on/off) @ 25°C: 45ns/270ns
• Test Condition: 1020V, 32A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

パッケージ: TO-247-3

IXYP20N65C3

IXYS

DISC IGBT XPT-GENX3 TO-220AB/FP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 105 A
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: 200 W
• Switching Energy: -
• Input Type: -
• Gate Charge: 30 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 135 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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IXYX25N250CV1

IXYS

IGBT 2500V 235A PLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500 V
• Current - Collector (Ic) (Max): 95 A
• Current - Collector Pulsed (Icm): 235 A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
• Power - Max: 937 W
• Switching Energy: 8.3mJ (on), 7.3mJ (off)
• Input Type: Standard
• Gate Charge: 147 nC
• Td (on/off) @ 25°C: 15ns/230ns
• Test Condition: 1250V, 25A, 5Ohm, 15V
• Reverse Recovery Time (trr): 220 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: PLUS247™-3

パッケージ: -

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APT35GN120SG

Microchip Technology

IGBT NPT FS 1200V 94A D3PAK

• IGBT Type: NPT, Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 94 A
• Current - Collector Pulsed (Icm): 105 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
• Power - Max: 379 W
• Switching Energy: -, 2.315mJ (off)
• Input Type: Standard
• Gate Charge: 220 nC
• Td (on/off) @ 25°C: 24ns/300ns
• Test Condition: 800V, 35A, 2.2Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
• Supplier Device Package: D3PAK

パッケージ: -

RGT30TM65DGC9

Rohm Semiconductor

IGBT TRNCH FLD 650V 14A TO220NFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 14 A
• Current - Collector Pulsed (Icm): 45 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 32 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 32 nC
• Td (on/off) @ 25°C: 18ns/64ns
• Test Condition: 400V, 15A, 10Ohm, 15V
• Reverse Recovery Time (trr): 55 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NFM

パッケージ: -

ISL9V5036P3-F085C

onsemi

ECOSPARK1 IGN-IGBT TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 390 V
• Current - Collector (Ic) (Max): 46 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
• Power - Max: 250 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 32 nC
• Td (on/off) @ 25°C: -/10.8µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

パッケージ: -

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STP8057

onsemi

IGBT T0220 SPCL 400V

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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GWA40MS120F4AG

STMicroelectronics

IGBT TRENCH FS 1200V 80A TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Power - Max: 536 W
• Switching Energy: 1.5mJ (on), 3.3mJ (off)
• Input Type: Standard
• Gate Charge: 147 nC
• Td (on/off) @ 25°C: 35ns/140ns
• Test Condition: 600V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 Long Leads

パッケージ: -

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IKB15N65EH5ATMA1

Infineon Technologies

IGBT TRENCH FS 650V 30A TO263-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 45 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 105 W
• Switching Energy: 400µJ (on), 80µJ (off)
• Input Type: Standard
• Gate Charge: 38 nC
• Td (on/off) @ 25°C: 16ns/145ns
• Test Condition: 400V, 15A, 39Ohm, 15V
• Reverse Recovery Time (trr): 70 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

パッケージ: -