ページ 66 - トランジスタ - IGBT - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - IGBT - シングル

レコード 4,424
ページ  66/158
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在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGR4045DTRRPBF
Infineon Technologies

IGBT 600V 12A 77W DPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 19.5nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫2,672
600V
12A
18A
2V @ 15V, 6A
77W
56µJ (on), 122µJ (off)
Standard
19.5nC
27ns/75ns
400V, 6A, 47 Ohm, 15V
74ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IRGB4045DPBF
Infineon Technologies

IGBT 600V 12A 77W TO220AB

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫6,108
600V
12A
18A
2V @ 15V, 6A
77W
56µJ (on), 122µJ (off)
Standard
13nC
27ns/75ns
400V, 6A, 47 Ohm, 15V
74ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
RJP60F0DPE-00#J3
Renesas Electronics America

IGBT 600V 50A 122W LDPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 25A
  • Power - Max: 122W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 46ns/70ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-83
  • Supplier Device Package: 4-LDPAK
パッケージ: SC-83
在庫7,024
600V
50A
-
1.82V @ 15V, 25A
122W
-
Standard
-
46ns/70ns
400V, 30A, 5 Ohm, 15V
-
150°C (TJ)
Surface Mount
SC-83
4-LDPAK
FGD3440G2
Fairchild/ON Semiconductor

IGBT 400V 26.9A 166W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): 26.9A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
  • Power - Max: 166W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: -/5.3µs
  • Test Condition: 300V, 6.5A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫2,976
400V
26.9A
-
1.2V @ 4V, 6A
166W
-
Logic
24nC
-/5.3µs
300V, 6.5A, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
IXSX50N60BD1
IXYS

IGBT 600V 75A 300W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: 3.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 167nC
  • Td (on/off) @ 25°C: 70ns/150ns
  • Test Condition: 480V, 50A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
パッケージ: TO-247-3
在庫6,768
600V
75A
200A
2.5V @ 15V, 50A
300W
3.3mJ (off)
Standard
167nC
70ns/150ns
480V, 50A, 2.7 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
hot FGA50N100BNTTU
Fairchild/ON Semiconductor

IGBT 1000V 50A 156W TO3P

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 156W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 257nC
  • Td (on/off) @ 25°C: 34ns/243ns
  • Test Condition: 600V, 60A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
パッケージ: TO-3P-3, SC-65-3
在庫5,136
1000V
50A
200A
2.9V @ 15V, 60A
156W
-
Standard
257nC
34ns/243ns
600V, 60A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
hot FGH40N6S2D
Fairchild/ON Semiconductor

IGBT 600V 75A 290W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
  • Power - Max: 290W
  • Switching Energy: 115µJ (on), 195µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 8ns/35ns
  • Test Condition: 390V, 20A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 48ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫103,464
600V
75A
180A
2.7V @ 15V, 20A
290W
115µJ (on), 195µJ (off)
Standard
35nC
8ns/35ns
390V, 20A, 3 Ohm, 15V
48ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXGX120N120A3
IXYS

IGBT 1200V 240A 830W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
  • Power - Max: 830W
  • Switching Energy: 10mJ (on), 33mJ (off)
  • Input Type: Standard
  • Gate Charge: 420nC
  • Td (on/off) @ 25°C: 40ns/490ns
  • Test Condition: 960V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
パッケージ: TO-247-3
在庫2,000
1200V
240A
600A
2.2V @ 15V, 100A
830W
10mJ (on), 33mJ (off)
Standard
420nC
40ns/490ns
960V, 100A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGH24N120C3H1
IXYS

IGBT 1200V 48A 250W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
  • Power - Max: 250W
  • Switching Energy: 1.16mJ (on), 470µJ (off)
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: 16ns/93ns
  • Test Condition: 600V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫4,832
1200V
48A
96A
4.2V @ 15V, 20A
250W
1.16mJ (on), 470µJ (off)
Standard
79nC
16ns/93ns
600V, 20A, 5 Ohm, 15V
70ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot IXGH20N120BD1
IXYS

IGBT 1200V 40A 190W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
  • Power - Max: 190W
  • Switching Energy: 2.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 72nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫5,776
1200V
40A
-
3.4V @ 15V, 20A
190W
2.1mJ (off)
Standard
72nC
25ns/150ns
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXYP8N90C3D1
IXYS

IGBT 900V 20A 125W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
  • Power - Max: 125W
  • Switching Energy: 460µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.3nC
  • Td (on/off) @ 25°C: 16ns/40ns
  • Test Condition: 450V, 8A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 114ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫3,744
900V
20A
48A
2.5V @ 15V, 8A
125W
460µJ (on), 180µJ (off)
Standard
13.3nC
16ns/40ns
450V, 8A, 30 Ohm, 15V
114ns
-
Through Hole
TO-220-3
TO-220AB
IKP20N65H5XKSA1
Infineon Technologies

IGBT 650V TO220-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 125W
  • Switching Energy: 170µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 18ns/156ns
  • Test Condition: 400V, 10A, 32 Ohm, 15V
  • Reverse Recovery Time (trr): 52ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
パッケージ: TO-220-3
在庫8,220
650V
42A
60A
2.1V @ 15V, 20A
125W
170µJ (on), 60µJ (off)
Standard
48nC
18ns/156ns
400V, 10A, 32 Ohm, 15V
52ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
hot APT35GP120BG
Microsemi Corporation

IGBT 1200V 96A 543W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 96A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
  • Power - Max: 543W
  • Switching Energy: 750µJ (on), 680µJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 16ns/94ns
  • Test Condition: 600V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫50,124
1200V
96A
140A
3.9V @ 15V, 35A
543W
750µJ (on), 680µJ (off)
Standard
150nC
16ns/94ns
600V, 35A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot APT100GN120B2G
Microsemi Corporation

IGBT 1200V 245A 960W TMAX

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 245A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Power - Max: 960W
  • Switching Energy: 11mJ (on), 9.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 540nC
  • Td (on/off) @ 25°C: 50ns/615ns
  • Test Condition: 800V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
パッケージ: TO-247-3 Variant
在庫3,376
1200V
245A
300A
2.1V @ 15V, 100A
960W
11mJ (on), 9.5mJ (off)
Standard
540nC
50ns/615ns
800V, 100A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
FGA6560WDF
Fairchild/ON Semiconductor

IGBT 650V 120A 306W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 306W
  • Switching Energy: 2.46mJ (on), 520µJ (off)
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: 25.6ns/71ns
  • Test Condition: 400V, 60A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 110ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
パッケージ: TO-3P-3, SC-65-3
在庫8,604
650V
120A
180A
2.3V @ 15V, 60A
306W
2.46mJ (on), 520µJ (off)
Standard
84nC
25.6ns/71ns
400V, 60A, 6 Ohm, 15V
110ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
IRGP4640DPBF
Infineon Technologies

IGBT 600V 65A 250W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 41ns/104ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
パッケージ: TO-247-3
在庫7,568
600V
65A
72A
1.9V @ 15V, 24A
250W
115µJ (on), 600µJ (off)
Standard
75nC
41ns/104ns
400V, 24A, 10 Ohm, 15V
89ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
AOK40B60D1
Alpha & Omega Semiconductor Inc.

IGBT 600V 80A 278W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 278W
  • Switching Energy: 1.55mJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 29ns/74ns
  • Test Condition: 400V, 40A, 7.5 Ohm, 15V
  • Reverse Recovery Time (trr): 127ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫10,860
600V
80A
140A
2.4V @ 15V, 40A
278W
1.55mJ (on), 300µJ (off)
Standard
45nC
29ns/74ns
400V, 40A, 7.5 Ohm, 15V
127ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot IKW40T120
Infineon Technologies

IGBT 1200V 75A 270W TO247-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 270W
  • Switching Energy: 6.5mJ
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 48ns/480ns
  • Test Condition: 600V, 40A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 240ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: TO-247-3
在庫143,640
1200V
75A
105A
2.3V @ 15V, 40A
270W
6.5mJ
Standard
203nC
48ns/480ns
600V, 40A, 15 Ohm, 15V
240ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IXXH80N65B4
IXYS

IGBT 650V 160A 625W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 430A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
  • Power - Max: 625W
  • Switching Energy: 3.77mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 38ns/120ns
  • Test Condition: 400V, 80A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXXH)
パッケージ: TO-247-3
在庫14,160
650V
160A
430A
2V @ 15V, 80A
625W
3.77mJ (on), 1.2mJ (off)
Standard
120nC
38ns/120ns
400V, 80A, 3 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXXH)
IXGA30N120B3
IXYS

IGBT 1200V 60A 300W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 3.47mJ (on), 2.16mJ (off)
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 16ns/127ns
  • Test Condition: 960V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫6,180
1200V
60A
150A
3.5V @ 15V, 30A
300W
3.47mJ (on), 2.16mJ (off)
Standard
87nC
16ns/127ns
960V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
STGF3NC120HD
STMicroelectronics

IGBT 1200V 6A 25W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
  • Power - Max: 25W
  • Switching Energy: 236µJ (on), 290µJ (off)
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 15ns/118ns
  • Test Condition: 800V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 51ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
パッケージ: TO-220-3 Full Pack
在庫25,308
1200V
6A
20A
2.8V @ 15V, 3A
25W
236µJ (on), 290µJ (off)
Standard
24nC
15ns/118ns
800V, 3A, 10 Ohm, 15V
51ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
IXGP30N120B3
IXYS

IGBT 1200V 60A 300W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 3.47mJ (on), 2.16mJ (off)
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 16ns/127ns
  • Test Condition: 960V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫6,156
1200V
60A
150A
3.5V @ 15V, 30A
300W
3.47mJ (on), 2.16mJ (off)
Standard
87nC
16ns/127ns
960V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXBH42N170
IXYS

IGBT 1700V 80A 360W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
  • Power - Max: 360W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 188nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.32µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXBH)
パッケージ: TO-247-3
在庫6,396
1700V
80A
300A
2.8V @ 15V, 42A
360W
-
Standard
188nC
-
-
1.32µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXBH)
FGH40T65SHD-F155
onsemi

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 268 W
  • Switching Energy: 1.01mJ (on), 297µJ (off)
  • Input Type: Standard
  • Gate Charge: 72.2 nC
  • Td (on/off) @ 25°C: 19.2ns/65.6ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 31.8 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: -
在庫5,223
650 V
80 A
120 A
2.1V @ 15V, 40A
268 W
1.01mJ (on), 297µJ (off)
Standard
72.2 nC
19.2ns/65.6ns
400V, 40A, 6Ohm, 15V
31.8 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
63-9015
Infineon Technologies

IGBT CHIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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IRG4RC10SDTRPBFBTMA1
Infineon Technologies

IGBT 600V 14A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 14 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38 W
  • Switching Energy: 310µJ (on), 3.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 15 nC
  • Td (on/off) @ 25°C: 76ns/815ns
  • Test Condition: 480V, 8A, 100Ohm, 15V
  • Reverse Recovery Time (trr): 28 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA (DPAK)
パッケージ: -
Request a Quote
600 V
14 A
18 A
1.8V @ 15V, 8A
38 W
310µJ (on), 3.28mJ (off)
Standard
15 nC
76ns/815ns
480V, 8A, 100Ohm, 15V
28 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA (DPAK)
IXYP20N120A4
IXYS

IGBT DISCRETE TO-220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 135 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 375 W
  • Switching Energy: 3.6mJ (on), 2.75mJ (off)
  • Input Type: Standard
  • Gate Charge: 46 nC
  • Td (on/off) @ 25°C: 12ns/275ns
  • Test Condition: 960V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 54 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 (IXYP)
パッケージ: -
Request a Quote
1200 V
80 A
135 A
1.9V @ 15V, 20A
375 W
3.6mJ (on), 2.75mJ (off)
Standard
46 nC
12ns/275ns
960V, 20A, 10Ohm, 15V
54 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220 (IXYP)
RJP43F4ADPP-90-T2F
Renesas Electronics Corporation

IGBT 430V, 40A FOR PLASMA TV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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