ページ 68 - トランジスタ - IGBT - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - IGBT - シングル

レコード 4,424
ページ  68/158
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説明
パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SKB10N60AATMA1
Infineon Technologies

IGBT 600V 20A 92W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
  • Power - Max: 92W
  • Switching Energy: 320µJ
  • Input Type: Standard
  • Gate Charge: 52nC
  • Td (on/off) @ 25°C: 28ns/178ns
  • Test Condition: 400V, 10A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): 220ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫6,384
600V
20A
40A
2.4V @ 15V, 10A
92W
320µJ
Standard
52nC
28ns/178ns
400V, 10A, 25 Ohm, 15V
220ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
IRG4BC20SD-S
Infineon Technologies

IGBT 600V 19A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 19A
  • Current - Collector Pulsed (Icm): 38A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
  • Power - Max: 60W
  • Switching Energy: 320µJ (on), 2.58mJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 62ns/690ns
  • Test Condition: 480V, 10A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,040
600V
19A
38A
1.6V @ 15V, 10A
60W
320µJ (on), 2.58mJ (off)
Standard
27nC
62ns/690ns
480V, 10A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRGBC20UD2
Infineon Technologies

IGBT W/DIODE 600V 13A TO-220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫133,200
600V
13A
-
3V @ 15V, 6.5A
60W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
RJH60A01RDPD-A0#J2
Renesas Electronics America

IGBT 600V 5A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 5A
  • Power - Max: 29.4W
  • Switching Energy: 130µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 11nC
  • Td (on/off) @ 25°C: 30ns/40ns
  • Test Condition: 300V, 5A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫6,800
600V
10A
-
2.3V @ 15V, 5A
29.4W
130µJ (on), 70µJ (off)
Standard
11nC
30ns/40ns
300V, 5A, 5 Ohm, 15V
100ns
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
hot IXSH24N60BD1
IXYS

IGBT 600V 48A 150W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 150W
  • Switching Energy: 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 41nC
  • Td (on/off) @ 25°C: 50ns/150ns
  • Test Condition: 480V, 24A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
パッケージ: TO-247-3
在庫390,000
600V
48A
96A
2.5V @ 15V, 24A
150W
1.3mJ (off)
Standard
41nC
50ns/150ns
480V, 24A, 33 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXSH)
IXST30N60CD1
IXYS

IGBT 600V 55A 200W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 30ns/90ns
  • Test Condition: 480V, 30A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫5,120
600V
55A
110A
2.5V @ 15V, 30A
200W
700µJ (off)
Standard
100nC
30ns/90ns
480V, 30A, 4.7 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot SGM2N60UFTF
Fairchild/ON Semiconductor

IGBT 600V 2.4A 2.1W SOT-223

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 2.4A
  • Current - Collector Pulsed (Icm): 10A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.2A
  • Power - Max: 2.1W
  • Switching Energy: 30µJ (on), 13µJ (off)
  • Input Type: Standard
  • Gate Charge: 9nC
  • Td (on/off) @ 25°C: 15ns/80ns
  • Test Condition: 300V, 1.2A, 200 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-4
パッケージ: TO-261-4, TO-261AA
在庫62,400
600V
2.4A
10A
2.6V @ 15V, 1.2A
2.1W
30µJ (on), 13µJ (off)
Standard
9nC
15ns/80ns
300V, 1.2A, 200 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-4
IGB30N60TATMA1
Infineon Technologies

IGBT 600V 60A 187W TO263-3-2

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
  • Power - Max: 187W
  • Switching Energy: 1.46mJ
  • Input Type: Standard
  • Gate Charge: 167nC
  • Td (on/off) @ 25°C: 23ns/254ns
  • Test Condition: 400V, 30A, 10.6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,552
600V
60A
90A
2.05V @ 15V, 30A
187W
1.46mJ
Standard
167nC
23ns/254ns
400V, 30A, 10.6 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IKD06N60RFAATMA1
Infineon Technologies

IGBT 600V 12A 100W PG-TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: 100W
  • Switching Energy: 90µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 8ns/105ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 48ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫6,096
600V
12A
18A
2.5V @ 15V, 6A
100W
90µJ (on), 90µJ (off)
Standard
48nC
8ns/105ns
400V, 6A, 23 Ohm, 15V
48ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IXGL75N250
IXYS

IGBT 2500V 110A 430W I5-PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 110A
  • Current - Collector Pulsed (Icm): 580A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
  • Power - Max: 430W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 410nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUSi5-Pak?
  • Supplier Device Package: ISOPLUSi5-Pak?
パッケージ: ISOPLUSi5-Pak?
在庫3,488
2500V
110A
580A
2.9V @ 15V, 75A
430W
-
Standard
410nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUSi5-Pak?
ISOPLUSi5-Pak?
RJH65D27BDPQ-A0#T2
Renesas Electronics America

IGBT TRENCH 650V 100A TO247A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
  • Power - Max: 375W
  • Switching Energy: 1mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 175nC
  • Td (on/off) @ 25°C: 20ns/165ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
パッケージ: TO-247-3
在庫4,272
650V
100A
-
1.65V @ 15V, 50A
375W
1mJ (on), 1.5mJ (off)
Standard
175nC
20ns/165ns
400V, 50A, 10 Ohm, 15V
80ns
175°C (TJ)
Through Hole
TO-247-3
TO-247A
SGH20N60RUFDTU
Fairchild/ON Semiconductor

IGBT 600V 32A 195W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 32A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Power - Max: 195W
  • Switching Energy: 524µJ (on), 473µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 30ns/48ns
  • Test Condition: 300V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 95ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
パッケージ: TO-3P-3, SC-65-3
在庫3,008
600V
32A
60A
2.8V @ 15V, 20A
195W
524µJ (on), 473µJ (off)
Standard
55nC
30ns/48ns
300V, 20A, 10 Ohm, 15V
95ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
hot ISL9V2540S3ST
Fairchild/ON Semiconductor

IGBT 430V 15.5A 166.7W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 15.5A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 4V, 6A
  • Power - Max: 166.7W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 15.1nC
  • Td (on/off) @ 25°C: -/3.64µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫5,072
430V
15.5A
-
1.8V @ 4V, 6A
166.7W
-
Logic
15.1nC
-/3.64µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
IRG7PH46UDPBF
Infineon Technologies

IGBT 1200V 40A 390W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 390W
  • Switching Energy: 2.61mJ (on), 1.85mJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 45ns/410ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
パッケージ: TO-247-3
在庫5,968
1200V
40A
160A
2V @ 15V, 40A
390W
2.61mJ (on), 1.85mJ (off)
Standard
220nC
45ns/410ns
600V, 40A, 10 Ohm, 15V
140ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IXBF12N300
IXYS

IGBT 3000V 26A 125W ISOPLUSI4

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 26A
  • Current - Collector Pulsed (Icm): 98A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
  • Power - Max: 125W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.4µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
パッケージ: i4-Pac?-5 (3 leads)
在庫6,640
3000V
26A
98A
3.2V @ 15V, 12A
125W
-
Standard
62nC
-
-
1.4µs
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5 (3 leads)
ISOPLUS i4-PAC?
FGH75T65UPD_F085
Fairchild/ON Semiconductor

IGBT 650V 150A 375W TO-247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
  • Power - Max: 375W
  • Switching Energy: 2.85mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 578nC
  • Td (on/off) @ 25°C: 32ns/166ns
  • Test Condition: 400V, 75A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫8,136
650V
150A
225A
2.3V @ 15V, 75A
375W
2.85mJ (on), 1.2mJ (off)
Standard
578nC
32ns/166ns
400V, 75A, 3 Ohm, 15V
85ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STGW45NC60WD
STMicroelectronics

IGBT 600V 90A 285W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 230A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
  • Power - Max: 285W
  • Switching Energy: 302µJ (on), 349µJ (off)
  • Input Type: Standard
  • Gate Charge: 126nC
  • Td (on/off) @ 25°C: 33ns/168ns
  • Test Condition: 390V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
パッケージ: TO-247-3
在庫399,600
600V
90A
230A
2.6V @ 15V, 30A
285W
302µJ (on), 349µJ (off)
Standard
126nC
33ns/168ns
390V, 30A, 10 Ohm, 15V
45ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
FGA30T65SHD
Fairchild/ON Semiconductor

IGBT 650V 60A 238W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 238W
  • Switching Energy: 598µJ (on), 167µJ (off)
  • Input Type: Standard
  • Gate Charge: 54.7nC
  • Td (on/off) @ 25°C: 14.4ns/52.8ns
  • Test Condition: 400V, 30A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 31.8ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
パッケージ: TO-3P-3, SC-65-3
在庫9,888
650V
60A
90A
2.1V @ 15V, 30A
238W
598µJ (on), 167µJ (off)
Standard
54.7nC
14.4ns/52.8ns
400V, 30A, 6 Ohm, 15V
31.8ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
STGW30M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 258W
  • Switching Energy: 300µJ (on), 960µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 31.6ns/115ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫7,908
650V
60A
120A
2V @ 15V, 30A
258W
300µJ (on), 960µJ (off)
Standard
80nC
31.6ns/115ns
400V, 30A, 10 Ohm, 15V
140ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot STGF30H60DF
STMicroelectronics

IGBT 600V 60A 37W TO220FP

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 37W
  • Switching Energy: 350µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: 50ns/160ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 110ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
パッケージ: TO-220-3 Full Pack
在庫8,412
600V
60A
120A
2.4V @ 15V, 30A
37W
350µJ (on), 400µJ (off)
Standard
105nC
50ns/160ns
400V, 30A, 10 Ohm, 15V
110ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
RGS80TSX2HRC11
Rohm Semiconductor

IGBT TRENCH FLD 1200V 80A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 555 W
  • Switching Energy: 3mJ (on), 3.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 104 nC
  • Td (on/off) @ 25°C: 49ns/199ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
パッケージ: -
在庫531
1200 V
80 A
120 A
2.1V @ 15V, 40A
555 W
3mJ (on), 3.1mJ (off)
Standard
104 nC
49ns/199ns
600V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
IXYK110N120C4
IXYS

IGBT 1200V 110A GEN4 XPT TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 310 A
  • Current - Collector Pulsed (Icm): 740 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
  • Power - Max: 1360 W
  • Switching Energy: 3.6mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 330 nC
  • Td (on/off) @ 25°C: 40ns/320ns
  • Test Condition: 600V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 48 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: PLUS264™
パッケージ: -
在庫12
1200 V
310 A
740 A
2.4V @ 15V, 110A
1360 W
3.6mJ (on), 1.9mJ (off)
Standard
330 nC
40ns/320ns
600V, 50A, 2Ohm, 15V
48 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
PLUS264™
LGB15N41ATI
Littelfuse Inc.

IGBT 440V 15A 107W D2PAK3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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RGW60TS65EHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 64A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 64 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 178 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 84 nC
  • Td (on/off) @ 25°C: 37ns/101ns
  • Test Condition: 400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 146 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
パッケージ: -
在庫1,350
650 V
64 A
120 A
1.9V @ 15V, 30A
178 W
-
Standard
84 nC
37ns/101ns
400V, 15A, 10Ohm, 15V
146 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
IXXH30N60C3
IXYS

DISC IGBT XPT-GENX3 TO-247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 110 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 24A
  • Power - Max: 270 W
  • Switching Energy: 500µJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 37 nC
  • Td (on/off) @ 25°C: 23ns/77ns
  • Test Condition: 400V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 33 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
パッケージ: -
Request a Quote
600 V
60 A
110 A
2.4V @ 15V, 24A
270 W
500µJ (on), 270µJ (off)
Standard
37 nC
23ns/77ns
400V, 24A, 10Ohm, 15V
33 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
STGB30H65FB
STMicroelectronics

IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 260 W
  • Switching Energy: 151µJ (on), 293µJ (off)
  • Input Type: Standard
  • Gate Charge: 149 nC
  • Td (on/off) @ 25°C: 37ns/146ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
パッケージ: -
Request a Quote
650 V
60 A
120 A
2V @ 15V, 30A
260 W
151µJ (on), 293µJ (off)
Standard
149 nC
37ns/146ns
400V, 30A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
RJP30H1DPP-M9-T2
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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-
-
-
-
-
-
-
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IXYH100N65A3
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 240 A
  • Current - Collector Pulsed (Icm): 480 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
  • Power - Max: 470 W
  • Switching Energy: 3.15mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 178 nC
  • Td (on/off) @ 25°C: 24ns/174ns
  • Test Condition: 400V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 64 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
パッケージ: -
Request a Quote
650 V
240 A
480 A
1.8V @ 15V, 70A
470 W
3.15mJ (on), 2.2mJ (off)
Standard
178 nC
24ns/174ns
400V, 50A, 2Ohm, 15V
64 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)