ページ 73 - トランジスタ - IGBT - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - IGBT - シングル

レコード 4,424
ページ  73/158
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説明
パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG4BC30U-SPBF
Infineon Technologies

IGBT 600V 23A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 17ns/78ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫5,632
600V
23A
92A
2.1V @ 15V, 12A
100W
160µJ (on), 200µJ (off)
Standard
50nC
17ns/78ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4BC40W-S
Infineon Technologies

IGBT 600V 40A 160W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 110µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 98nC
  • Td (on/off) @ 25°C: 27ns/100ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫6,240
600V
40A
160A
2.5V @ 15V, 20A
160W
110µJ (on), 230µJ (off)
Standard
98nC
27ns/100ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
RJH60V3BDPE-00#J3
Renesas Electronics America

IGBT 600V 35A 113W LDPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 17A
  • Power - Max: 113W
  • Switching Energy: 90µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 60nC
  • Td (on/off) @ 25°C: 40ns/90ns
  • Test Condition: 300V, 17A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-83
  • Supplier Device Package: 4-LDPAK
パッケージ: SC-83
在庫5,424
600V
35A
-
2.2V @ 15V, 17A
113W
90µJ (on), 300µJ (off)
Standard
60nC
40ns/90ns
300V, 17A, 5 Ohm, 15V
25ns
150°C (TJ)
Surface Mount
SC-83
4-LDPAK
RJH60V2BDPE-00#J3
Renesas Electronics America

IGBT 600V 25A 63W LDPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
  • Power - Max: 63W
  • Switching Energy: 30µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 33ns/65ns
  • Test Condition: 300V, 12A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-83
  • Supplier Device Package: 4-LDPAK
パッケージ: SC-83
在庫3,424
600V
25A
-
2.2V @ 15V, 12A
63W
30µJ (on), 180µJ (off)
Standard
32nC
33ns/65ns
300V, 12A, 5 Ohm, 15V
25ns
150°C (TJ)
Surface Mount
SC-83
4-LDPAK
hot NGD18N40CLBT4G
Littelfuse Inc.

IGBT 430V 15A 115W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
  • Power - Max: 115W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫241,908
430V
15A
50A
2.5V @ 4V, 15A
115W
-
Logic
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
hot IXGH28N60B
IXYS

IGBT 600V 40A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
  • Power - Max: 150W
  • Switching Energy: 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 68nC
  • Td (on/off) @ 25°C: 15ns/175ns
  • Test Condition: 480V, 28A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫390,000
600V
40A
80A
2V @ 15V, 28A
150W
2mJ (off)
Standard
68nC
15ns/175ns
480V, 28A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot IXGH30N60C2D1
IXYS

IGBT 600V 70A 190W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 190µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 13ns/70ns
  • Test Condition: 400V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫4,432
600V
70A
150A
2.7V @ 15V, 24A
190W
190µJ (off)
Standard
70nC
13ns/70ns
400V, 24A, 5 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
HGTD3N60C3S9A
Fairchild/ON Semiconductor

IGBT 600V 6A 33W TO252AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
  • Power - Max: 33W
  • Switching Energy: 85µJ (on), 245µJ (off)
  • Input Type: Standard
  • Gate Charge: 10.8nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 480V, 3A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫4,896
600V
6A
24A
2V @ 15V, 3A
33W
85µJ (on), 245µJ (off)
Standard
10.8nC
-
480V, 3A, 82 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
STGP3NB60HD
STMicroelectronics

IGBT 600V 10A 50W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
  • Power - Max: 50W
  • Switching Energy: 33µJ (off)
  • Input Type: Standard
  • Gate Charge: 21nC
  • Td (on/off) @ 25°C: 5ns/53ns
  • Test Condition: 480V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫5,584
600V
10A
24A
2.8V @ 15V, 3A
50W
33µJ (off)
Standard
21nC
5ns/53ns
480V, 3A, 10 Ohm, 15V
45ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXSA20N60B2D1
IXYS

IGBT 600V 35A 190W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
  • Power - Max: 190W
  • Switching Energy: 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 30ns/116ns
  • Test Condition: 480V, 16A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 AA (IXSA)
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,216
600V
35A
60A
2.5V @ 15V, 16A
190W
380µJ (off)
Standard
33nC
30ns/116ns
480V, 16A, 10 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 AA (IXSA)
IXYH16N250CV1HV
IXYS

IGBT 2500V 35A TO247HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 126A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
  • Power - Max: 500W
  • Switching Energy: 4.75mJ (on), 3.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 97nC
  • Td (on/off) @ 25°C: 14ns/260ns
  • Test Condition: 1250V, 16A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 19ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
パッケージ: TO-247-3
在庫2,640
2500V
35A
126A
4V @ 15V, 16A
500W
4.75mJ (on), 3.9mJ (off)
Standard
97nC
14ns/260ns
1250V, 16A, 10 Ohm, 15V
19ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
IXDR30N120
IXYS

IGBT 1200V 50A 200W ISOPLUS247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 4.6mJ (on), 3.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 30A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
パッケージ: ISOPLUS247?
在庫3,312
1200V
50A
60A
2.9V @ 15V, 30A
200W
4.6mJ (on), 3.4mJ (off)
Standard
120nC
-
600V, 30A, 47 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
hot NGTB40N60FL2WG
ON Semiconductor

IGBT 600V 80A 366W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 366W
  • Switching Energy: 970µJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 84ns/177ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 72ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫7,328
600V
80A
160A
2V @ 15V, 40A
366W
970µJ (on), 440µJ (off)
Standard
170nC
84ns/177ns
400V, 40A, 10 Ohm, 15V
72ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
AOB10B60D
Alpha & Omega Semiconductor Inc.

IGBT 600V 20A 163W TO263

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
  • Power - Max: 163W
  • Switching Energy: 260µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 17.4nC
  • Td (on/off) @ 25°C: 10ns/72ns
  • Test Condition: 400V, 10A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 105ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,536
600V
20A
40A
1.8V @ 15V, 10A
163W
260µJ (on), 70µJ (off)
Standard
17.4nC
10ns/72ns
400V, 10A, 30 Ohm, 15V
105ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
TIG074E8-TL-H
ON Semiconductor

IGBT 400V 150A 8ECH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 5.4V @ 2.5V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-28FL/ECH8
パッケージ: 8-SMD, Flat Lead
在庫5,824
400V
-
150A
5.4V @ 2.5V, 100A
-
-
Standard
-
-
-
-
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
SOT-28FL/ECH8
IXBX50N360HV
IXYS

IGBT 3600V 125A 660W TO-247PLUS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3600V
  • Current - Collector (Ic) (Max): 125A
  • Current - Collector Pulsed (Icm): 420A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
  • Power - Max: 660W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 46ns/205ns
  • Test Condition: 960V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 1.7µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫7,200
3600V
125A
420A
2.9V @ 15V, 50A
660W
-
Standard
210nC
46ns/205ns
960V, 50A, 5 Ohm, 15V
1.7µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
RGT8NS65DGTL
Rohm Semiconductor

IGBT 650V 8A 65W TO-263S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 65W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 13.5nC
  • Td (on/off) @ 25°C: 17ns/69ns
  • Test Condition: 400V, 4A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS (TO-263S)
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫7,056
650V
8A
12A
2.1V @ 15V, 4A
65W
-
Standard
13.5nC
17ns/69ns
400V, 4A, 50 Ohm, 15V
40ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
LPDS (TO-263S)
hot HGTG5N120BND
Fairchild/ON Semiconductor

IGBT 1200V 21A 167W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
  • Power - Max: 167W
  • Switching Energy: 450µJ (on), 390µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 22ns/160ns
  • Test Condition: 960V, 5A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫436,680
1200V
21A
40A
2.7V @ 15V, 5A
167W
450µJ (on), 390µJ (off)
Standard
53nC
22ns/160ns
960V, 5A, 25 Ohm, 15V
65ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
STGF15M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 31W
  • Switching Energy: 90µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 24ns/93ns
  • Test Condition: 400V, 15A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 142ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
パッケージ: TO-220-3 Full Pack
在庫22,656
650V
30A
60A
2V @ 15V, 15A
31W
90µJ (on), 450µJ (off)
Standard
45nC
24ns/93ns
400V, 15A, 12 Ohm, 15V
142ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
STGP20V60F
STMicroelectronics

IGBT 600V 40A 167W TO220AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 200µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 38ns/149ns
  • Test Condition: 400V, 20A, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
パッケージ: TO-220-3
在庫19,740
600V
40A
80A
2.2V @ 15V, 20A
167W
200µJ (on), 130µJ (off)
Standard
116nC
38ns/149ns
400V, 20A, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
IRG4PH40KDPBF
Infineon Technologies

IGBT 1200V 30A 160W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
  • Power - Max: 160W
  • Switching Energy: 1.31mJ (on), 1.12mJ (off)
  • Input Type: Standard
  • Gate Charge: 94nC
  • Td (on/off) @ 25°C: 50ns/96ns
  • Test Condition: 800V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 63ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
パッケージ: TO-247-3
在庫30,366
1200V
30A
60A
3.4V @ 15V, 15A
160W
1.31mJ (on), 1.12mJ (off)
Standard
94nC
50ns/96ns
800V, 15A, 10 Ohm, 15V
63ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot STGWT20H60DF
STMicroelectronics

IGBT 600V 40A 167W TO3PF

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 209µJ (on), 261µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 42.5ns/177ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
パッケージ: TO-3P-3, SC-65-3
在庫72,000
600V
40A
80A
2V @ 15V, 20A
167W
209µJ (on), 261µJ (off)
Standard
115nC
42.5ns/177ns
400V, 20A, 10 Ohm, 15V
90ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXGH36N60B3C1
IXYS

IGBT 600V 75A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 390µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 20ns/125ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫6,384
600V
75A
200A
1.8V @ 15V, 30A
250W
390µJ (on), 800µJ (off)
Standard
80nC
20ns/125ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IKD06N60RC2ATMA1
Infineon Technologies

IGBT TRENCH FS 600V 11.7A TO252

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 11.7 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
  • Power - Max: 51.7 W
  • Switching Energy: 170µJ (on), 80µJ (off)
  • Input Type: Standard
  • Gate Charge: 31 nC
  • Td (on/off) @ 25°C: 6ns/129ns
  • Test Condition: 400V, 6A, 49Ohm, 15V
  • Reverse Recovery Time (trr): 98 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
パッケージ: -
在庫13,752
600 V
11.7 A
18 A
2.3V @ 15V, 6A
51.7 W
170µJ (on), 80µJ (off)
Standard
31 nC
6ns/129ns
400V, 6A, 49Ohm, 15V
98 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
SIGC84T120R3LEX1SA7
Infineon Technologies

IGBT 1200V 75A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
1200 V
-
225 A
2.1V @ 15V, 75A
-
-
Standard
-
-
-
-
-
-
-
-
FGI3040G2
Fairchild Semiconductor

IGBT 41A, 390V, N CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RGTV60TK65GVC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 33A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 33 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 76 W
  • Switching Energy: 570µJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 64 nC
  • Td (on/off) @ 25°C: 33ns/105ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
パッケージ: -
在庫1,308
650 V
33 A
120 A
1.9V @ 15V, 30A
76 W
570µJ (on), 500µJ (off)
Standard
64 nC
33ns/105ns
400V, 30A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
IXYN150N60B3
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 250 A
  • Current - Collector Pulsed (Icm): 750 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
  • Power - Max: 830 W
  • Switching Energy: 4.2mJ (on), 2.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 260 nC
  • Td (on/off) @ 25°C: 27ns/167ns
  • Test Condition: 400V, 75A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 88 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
パッケージ: -
Request a Quote
600 V
250 A
750 A
2.2V @ 15V, 150A
830 W
4.2mJ (on), 2.6mJ (off)
Standard
260 nC
27ns/167ns
400V, 75A, 2Ohm, 15V
88 ns
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B