トランジスタ - IGBT - シングル

IRGP4078D-EPBF

Infineon Technologies

IGBT 600V 74A 278W TO247AD

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 74A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
• Power - Max: 278W
• Switching Energy: 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 92nC
• Td (on/off) @ 25°C: -/116ns
• Test Condition: 400V, 50A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

パッケージ: TO-247-3

IRG4PC50UD-MP

Infineon Technologies

IGBT 600V 55A 200W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 55A
• Current - Collector Pulsed (Icm): 220A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
• Power - Max: 200W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 270nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 75ns
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

パッケージ: TO-247-3

IRG6S330UPBF

Infineon Technologies

IGBT 330V 70A 160W D2PAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 330V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
• Power - Max: 160W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 86nC
• Td (on/off) @ 25°C: 39ns/120ns
• Test Condition: 196V, 25A, 10 Ohm
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4RC10STRRPBF

Infineon Technologies

IGBT 600V 14A 38W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
• Power - Max: 38W
• Switching Energy: 140µJ (on), 2.58mJ (off)
• Input Type: Standard
• Gate Charge: 15nC
• Td (on/off) @ 25°C: 25ns/630ns
• Test Condition: 480V, 8A, 100 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRG4BC20UD-STRL

Infineon Technologies

IGBT 600V 13A 60W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): 52A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
• Power - Max: 60W
• Switching Energy: 160µJ (on), 130µJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 39ns/93ns
• Test Condition: 480V, 6.5A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXXX160N65C4

IXYS

IGBT 650V 290A 940W PLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 290A
• Current - Collector Pulsed (Icm): 800A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
• Power - Max: 940W
• Switching Energy: 3.5mJ (on), 1.3mJ (off)
• Input Type: Standard
• Gate Charge: 422nC
• Td (on/off) @ 25°C: 52ns/197ns
• Test Condition: 400V, 80A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

パッケージ: TO-247-3

IXGT30N60C2D1

IXYS

IGBT 600V 70A 190W TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
• Power - Max: 190W
• Switching Energy: 190µJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: 13ns/70ns
• Test Condition: 400V, 24A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

HGT1S14N36G3VLS

Fairchild/ON Semiconductor

IGBT 390V 18A 100W TO263AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 390V
• Current - Collector (Ic) (Max): 18A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 5V, 14A
• Power - Max: 100W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 24nC
• Td (on/off) @ 25°C: -/7µs
• Test Condition: 300V, 7A, 25 Ohm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NGD18N40CLBT4

ON Semiconductor

IGBT 430V 15A 115W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430V
• Current - Collector (Ic) (Max): 15A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
• Power - Max: 115W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK-3

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

NGTG40N120FL2WG

ON Semiconductor

IGBT 1200V 40A TO-247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
• Power - Max: 535W
• Switching Energy: 3.4mJ (on), 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 313nC
• Td (on/off) @ 25°C: 116ns/286ns
• Test Condition: 600V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

パッケージ: TO-247-3

IXGH32N100A3

IXYS

IGBT 1000V 75A 300W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 32A
• Power - Max: 300W
• Switching Energy: 2.6mJ (on), 9.5mJ (off)
• Input Type: Standard
• Gate Charge: 87nC
• Td (on/off) @ 25°C: 24ns/385ns
• Test Condition: 800V, 32A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

パッケージ: TO-247-3

IXGT6N170

IXYS

IGBT 1700V 12A 75W TO268

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A
• Power - Max: 75W
• Switching Energy: 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 20nC
• Td (on/off) @ 25°C: 40ns/250ns
• Test Condition: 1360V, 6A, 33 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

SGH30N60RUFDTU

Fairchild/ON Semiconductor

IGBT 600V 48A 235W TO3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
• Power - Max: 235W
• Switching Energy: 919µJ (on), 814µJ (off)
• Input Type: Standard
• Gate Charge: 85nC
• Td (on/off) @ 25°C: 30ns/54ns
• Test Condition: 300V, 30A, 7 Ohm, 15V
• Reverse Recovery Time (trr): 95ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN

パッケージ: TO-3P-3, SC-65-3

FGY160T65SPD_F085

Fairchild/ON Semiconductor

650V FS GEN3 TRENCH IGBT

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 240A
• Current - Collector Pulsed (Icm): 480A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
• Power - Max: 882W
• Switching Energy: 12.4mJ (on), 5.7mJ (off)
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 53ns/98ns
• Test Condition: 400V, 160A, 15V
• Reverse Recovery Time (trr): 132ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

パッケージ: TO-247-3

RJH60F6DPK-00#T0

Renesas Electronics America

IGBT 600V 85A 297.6W TO-3P

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 45A
• Power - Max: 297.6W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 58ns/131ns
• Test Condition: 400V, 30A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

パッケージ: TO-3P-3, SC-65-3

RGT30NS65DGTL

Rohm Semiconductor

IGBT 650V 30A 133W TO-263S

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 133W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: 18ns/64ns
• Test Condition: 400V, 15A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 55ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: LPDS (TO-263S)

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT25GN120SG

Microsemi Corporation

IGBT 1200V 67A 272W D3PAK

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 67A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
• Power - Max: 272W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 155nC
• Td (on/off) @ 25°C: 22ns/280ns
• Test Condition: 800V, 25A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: D3Pak

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

SIGC25T60NCX1SA6

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 21ns/110ns
• Test Condition: 300V, 30A, 8.2Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

パッケージ: -

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IQFH68N06NM5ATMA1

Infineon Technologies

TRENCH 40<-<100V

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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AFGHL25T120RLD

onsemi

1200V/25A FSII IGBT LOW VCESAT T

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 48 A
• Current - Collector Pulsed (Icm): 100 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
• Power - Max: 400 W
• Switching Energy: 1.94mJ (on), 730µJ (off)
• Input Type: Standard
• Gate Charge: 277 nC
• Td (on/off) @ 25°C: 27.2ns/116ns
• Test Condition: 600V, 25A, 5Ohm, 15V
• Reverse Recovery Time (trr): 159 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

パッケージ: -

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AIKB50N65DF5ATMA1

Infineon Technologies

DISCRETE SWITCHES

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2

パッケージ: -

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RGT20TM65DGC9

Rohm Semiconductor

IGBT TRNCH FLD 650V 10A TO220NFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 10 A
• Current - Collector Pulsed (Icm): 30 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
• Power - Max: 25 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 22 nC
• Td (on/off) @ 25°C: 12ns/32ns
• Test Condition: 400V, 10A, 10Ohm, 15V
• Reverse Recovery Time (trr): 42 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NFM

パッケージ: -

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HGTG32N60E2

Harris Corporation

50A, 600V N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
• Power - Max: 208 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 265 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

パッケージ: -

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AFGHL50T65SQDC

onsemi

IGBT FIELD STOP 650V 100A TO247

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Power - Max: 238 W
• Switching Energy: 131µJ (on), 96µJ (off)
• Input Type: Standard
• Gate Charge: 94 nC
• Td (on/off) @ 25°C: 17.6ns/94.4ns
• Test Condition: 400V, 12.5A, 4.7Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

パッケージ: -

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IXA20I1200PZ-TRL

IXYS

DISC IGBT XPT-GENX3 TO-263D2

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 38 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 165 W
• Switching Energy: 1.6mJ (on), 1.7mJ (off)
• Input Type: Standard
• Gate Charge: 47 nC
• Td (on/off) @ 25°C: 48ns/230ns
• Test Condition: 600V, 15A, 56Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263HV

パッケージ: -

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RGT50NL65DGTL

Rohm Semiconductor

IGBT TRENCH FIELD 650V 48A LPDS

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 48 A
• Current - Collector Pulsed (Icm): 75 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
• Power - Max: 194 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 49 nC
• Td (on/off) @ 25°C: 27ns/88ns
• Test Condition: 400V, 25A, 10Ohm, 15V
• Reverse Recovery Time (trr): 58 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: LPDS

パッケージ: -

RGW60TK65DGVC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 33A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 33 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
• Power - Max: 72 W
• Switching Energy: 480µJ (on), 490µJ (off)
• Input Type: Standard
• Gate Charge: 84 nC
• Td (on/off) @ 25°C: 37ns/114ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): 92 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

パッケージ: -

IKQB120N75CP2AKSA1

Infineon Technologies

IGBT 750V 150A TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 750 V
• Current - Collector (Ic) (Max): 150 A
• Current - Collector Pulsed (Icm): 360 A
• Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
• Power - Max: 577 W
• Switching Energy: 6.4mJ (on), 3.4mJ (off)
• Input Type: Standard
• Gate Charge: 481 nC
• Td (on/off) @ 25°C: 57ns/285ns
• Test Condition: 450V, 120A, 4.8Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-51

パッケージ: -