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IGBT 1200V 75A 300W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 180A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
- Power - Max: 300W
- Switching Energy: 21mJ (off)
- Input Type: Standard
- Gate Charge: 150nC
- Td (on/off) @ 25°C: 80ns/400ns
- Test Condition: 960V, 45A, 2.7 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXSH)
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パッケージ: TO-247-3 |
在庫4,528 |
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IXYS |
IGBT 600V 14A 54W TO220
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 14A
- Current - Collector Pulsed (Icm): 30A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
- Power - Max: 54W
- Switching Energy: 70µJ (on), 300µJ (off)
- Input Type: Standard
- Gate Charge: 25nC
- Td (on/off) @ 25°C: 9ns/100ns
- Test Condition: 480V, 7A, 22 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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パッケージ: TO-220-3 |
在庫34,512 |
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IGBT 650V 240A 880W TO264
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 240A
- Current - Collector Pulsed (Icm): 630A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
- Power - Max: 880W
- Switching Energy: 2.2mJ (on), 1.05mJ (off)
- Input Type: Standard
- Gate Charge: 183nC
- Td (on/off) @ 25°C: 38ns/156ns
- Test Condition: 400V, 55A, 2 Ohm, 15V
- Reverse Recovery Time (trr): 100ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 (IXXK)
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パッケージ: TO-264-3, TO-264AA |
在庫5,600 |
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IGBT 600V 200A SOT-227B
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 200A
- Power - Max: 700W
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
- Current - Collector Cutoff (Max): 50µA
- Input Capacitance (Cies) @ Vce: 9.9nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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パッケージ: SOT-227-4, miniBLOC |
在庫4,384 |
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MOD IGBT SIXPACK H-BRDG 1200V E2
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 90A
- Power - Max: 350W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
- Current - Collector Cutoff (Max): 800µA
- Input Capacitance (Cies) @ Vce: 3.8nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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パッケージ: E2 |
在庫2,768 |
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IXYS |
IGBT 600V 160A SOT-227B
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 160A
- Power - Max: 625W
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 80A
- Current - Collector Cutoff (Max): 25µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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パッケージ: SOT-227-4, miniBLOC |
在庫6,304 |
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MODULE IGBT CBI
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 18A
- Power - Max: 70W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
- Current - Collector Cutoff (Max): 600µA
- Input Capacitance (Cies) @ Vce: 0.45nF @ 25V
- Input: Single Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: MiniPack2
- Supplier Device Package: MiniPack2
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パッケージ: MiniPack2 |
在庫6,496 |
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MOSFET N-CH 600V 18A PLUS220-SMD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PLUS-220SMD
- Package / Case: PLUS-220SMD
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パッケージ: PLUS-220SMD |
在庫3,456 |
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MOSFET N-CH 1200V 32A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 32A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1000W (Tc)
- Rds On (Max) @ Id, Vgs: 310 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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パッケージ: SOT-227-4, miniBLOC |
在庫2,112 |
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MOSFET N-CH 60V 340A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 340A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 16800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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パッケージ: SOT-227-4, miniBLOC |
在庫7,440 |
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MOSFET N-CH 200V 156A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 378nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: TO-247-3
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パッケージ: TO-247-3 |
在庫2,976 |
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MOSFET N-CH 300V 94A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 47A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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パッケージ: TO-247-3 |
在庫2,368 |
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MOSFET N-CH 1000V ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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パッケージ: ISOPLUS247? |
在庫2,608 |
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MOSFET N-CH 500V 16A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 199nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 695W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 8A, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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パッケージ: TO-247-3 |
在庫3,328 |
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MOSFET N-CH 300V 52A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 66 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
在庫5,808 |
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MOSFET N-CH 250V 50A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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パッケージ: TO-220-3 |
在庫6,608 |
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MOSFET N-CH 100V 200A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
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パッケージ: TO-264-3, TO-264AA |
在庫7,664 |
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MOSFET N-CH 300V 52A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 66 mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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パッケージ: TO-3P-3, SC-65-3 |
在庫4,384 |
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RF MOSFET N-CHANNEL DE150
- Transistor Type: N-Channel
- Frequency: 100MHz
- Gain: -
- Voltage - Test: -
- Current Rating: 25µA
- Noise Figure: -
- Current - Test: -
- Power - Output: 200W
- Voltage - Rated: 100V
- Package / Case: 6-SMD, Flat Lead Exposed Pad
- Supplier Device Package: DE150
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パッケージ: 6-SMD, Flat Lead Exposed Pad |
在庫7,536 |
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MOSFET 6N-CH 55V 150A ISOPLUS
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 150A
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Flat Leads
- Supplier Device Package: ISOPLUS-DIL?
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パッケージ: 17-SMD, Flat Leads |
在庫4,432 |
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RECT BRIDGE 3PH 1200V PWS-E-2
- Structure: Bridge, 3-Phase - All SCRs
- Number of SCRs, Diodes: 6 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 167A
- Current - On State (It (RMS)) (Max): 89A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E2
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パッケージ: PWS-E2 |
在庫7,056 |
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THERISTER MODULE 2200V
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 2200V
- Current - On State (It (AV)) (Max): 165A
- Current - On State (It (RMS)) (Max): 300A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
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パッケージ: Y4-M6 |
在庫3,296 |
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RECT BRIDGE 1PH 1200V FO-T-A
- Structure: Bridge, Single Phase - All SCRs
- Number of SCRs, Diodes: 4 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 53A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
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パッケージ: FO-T-A |
在庫2,784 |
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MOD THYRISTOR DUAL 1200V TO240AA
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 115A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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パッケージ: TO-240AA |
在庫2,896 |
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DIODE GEN PURP 600V 30A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.52V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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パッケージ: TO-220-2 |
在庫6,768 |
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DIODE MODULE 19.2KV 1.7A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 19200V
- Current - Average Rectified (Io) (per Diode): 1.7A
- Voltage - Forward (Vf) (Max) @ If: 12V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 19200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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パッケージ: Module |
在庫4,784 |
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RECT BRIDGE 3PH 140A 1800V PWS-C
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1800V
- Current - Average Rectified (Io): 140A
- Voltage - Forward (Vf) (Max) @ If: 1.09V @ 40A
- Current - Reverse Leakage @ Vr: 100µA @ 1800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-C
- Supplier Device Package: PWS-C
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パッケージ: PWS-C |
在庫3,952 |
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DIODE BRIDGE 1600V 72A PWS-D
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 72A
- Voltage - Forward (Vf) (Max) @ If: 1.08V @ 30A
- Current - Reverse Leakage @ Vr: 100µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-D
- Supplier Device Package: PWS-D
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パッケージ: PWS-D |
在庫7,824 |
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IC DRVR HALF BRIDGE 600MA 8DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 35 V
- Logic Voltage - VIL, VIH: 2.4V, 2.7V
- Current - Peak Output (Source, Sink): 600mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 28ns, 18ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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パッケージ: 8-DIP (0.300", 7.62mm) |
在庫5,456 |
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IC CURRENT REGULATOR TO220AB
- Function: Current Regulator
- Sensing Method: -
- Accuracy: -
- Voltage - Input: -
- Current - Output: 60mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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パッケージ: TO-220-3 |
在庫4,352 |
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