|
|
IXYS |
IGBT 600V 70A 170W ISOPLUS247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 70A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
- Power - Max: 170W
- Switching Energy: 1.8mJ (off)
- Input Type: Standard
- Gate Charge: 190nC
- Td (on/off) @ 25°C: 50ns/110ns
- Test Condition: 480V, 40A, 2.7 Ohm, 15V
- Reverse Recovery Time (trr): 35ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
|
パッケージ: ISOPLUS247? |
在庫3,184 |
|
|
|
IXYS |
IGBT 600V 75A 300W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
- Power - Max: 300W
- Switching Energy: 2.5mJ (off)
- Input Type: Standard
- Gate Charge: 190nC
- Td (on/off) @ 25°C: 55ns/400ns
- Test Condition: 480V, 40A, 2.7 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXSH)
|
パッケージ: TO-247-3 |
在庫3,408 |
|
|
|
IXYS |
IGBT 1200V 70A 300W TO268
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 70A
- Current - Collector Pulsed (Icm): 140A
- Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
- Power - Max: 300W
- Switching Energy: 3.8mJ (off)
- Input Type: Standard
- Gate Charge: 170nC
- Td (on/off) @ 25°C: 50ns/180ns
- Test Condition: 960V, 35A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
|
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
在庫6,544 |
|
|
|
IXYS |
IGBT 650V 60A 270W TO268HV
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 118A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
- Power - Max: 270W
- Switching Energy: 1mJ (on), 270µJ (off)
- Input Type: Standard
- Gate Charge: 44nC
- Td (on/off) @ 25°C: 21ns/75ns
- Test Condition: 400V, 30A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 120ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
|
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
在庫5,824 |
|
|
|
IXYS |
IGBT 3000V 80A 400W TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3000V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 280A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
- Power - Max: 400W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 142nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.5µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXBH)
|
パッケージ: TO-247-3 |
在庫2,240 |
|
|
|
IXYS |
IGBT PHASELEG 1200V 30A SMPD
- IGBT Type: PT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 63A
- Power - Max: 230W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
- Current - Collector Cutoff (Max): 150µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Module
- Supplier Device Package: ISOPLUS-SMPD?.B
|
パッケージ: 9-SMD Module |
在庫4,656 |
|
|
|
IXYS |
MOSFET N-CH 500V 15A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 260 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
|
パッケージ: ISOPLUS220? |
在庫2,384 |
|
|
|
IXYS |
MOSFET N-CH 55V 440A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 405nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 25000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1000W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
パッケージ: TO-247-3 |
在庫2,352 |
|
|
|
IXYS |
MOSFET N-CH 250V 100A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
|
パッケージ: TO-264-3, TO-264AA |
在庫17,616 |
|
|
|
IXYS |
MOSFET N-CH 1000V 1.4A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫3,552 |
|
|
|
IXYS |
MOSFET N-CH 800V 2A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫7,344 |
|
|
|
IXYS |
MOSFET N-CH 500V 1.6A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63 |
在庫60,252 |
|
|
|
IXYS |
MOSFET N-CH 1000V 3A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 1.5A, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
パッケージ: TO-220-3 |
在庫6,240 |
|
|
|
IXYS |
MOSFET N-CH 600V 22A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
|
パッケージ: TO-247-3 |
在庫22,248 |
|
|
|
IXYS |
MOSFET P-CH 100V 52A TO-3P
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2845pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
|
パッケージ: TO-3P-3, SC-65-3 |
在庫20,274 |
|
|
|
IXYS |
MOD THYRISTOR DUAL 1400V Y2-DCB
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 250A
- Current - On State (It (RMS)) (Max): 400A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 9000A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y2-DCB
|
パッケージ: Y2-DCB |
在庫4,288 |
|
|
|
IXYS |
MOD THYRISTOR DUAL 16KV
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 260A
- Current - On State (It (RMS)) (Max): 408A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 8300A, 8970A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4
|
パッケージ: Y4 |
在庫6,928 |
|
|
|
IXYS |
MOD THYRISTOR DUAL 16KV TO-240
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 25A
- Current - On State (It (RMS)) (Max): 40A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 55mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 430A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
|
パッケージ: TO-240AA |
在庫2,160 |
|
|
|
IXYS |
DIODE MODULE 1.8KV Y1-CU
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Y1-CU
- Supplier Device Package: Y1-CU
- Operating Temperature - Junction: -
|
パッケージ: Y1-CU |
在庫2,688 |
|
|
|
IXYS |
DIODE GEN PURP 1.4KV 60A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 230ns
- Current - Reverse Leakage @ Vr: 200µA @ 1200V
- Capacitance @ Vr, F: 32pF @ 1200V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
パッケージ: TO-247-2 |
在庫17,892 |
|
|
|
IXYS |
DIODE GEN PURP 2.2KV 30A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40µA @ 2200V
- Capacitance @ Vr, F: 7pF @ 700V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -55°C ~ 150°C
|
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫29,568 |
|
|
|
IXYS |
DIODE MODULE 1.4KV 270A Y2-DCB
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io) (per Diode): 270A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 600A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40mA @ 1400V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Y2-DCB
- Supplier Device Package: Y2-DCB
|
パッケージ: Y2-DCB |
在庫4,784 |
|
|
|
IXYS |
DIODE MODULE 150V 100A SOT227B
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 910mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 150V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
|
パッケージ: SOT-227-4, miniBLOC |
在庫5,424 |
|
|
|
IXYS |
RECT BRIDGE 3PH 1200V V1-A
- Diode Type: Three Phase (Braking)
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 110A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
- Current - Reverse Leakage @ Vr: 20µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V1-A
- Supplier Device Package: V1-A
|
パッケージ: V1-A |
在庫3,504 |
|
|
|
IXYS |
RECT BRIDGE 3PH 38A 1600V PWS-A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 38A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
- Current - Reverse Leakage @ Vr: 40µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-A
- Supplier Device Package: PWS-A
|
パッケージ: PWS-A |
在庫2,992 |
|
|
|
IXYS |
RECT BRIDGE GP 1600V SOT227B
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.21V @ 50A
- Current - Reverse Leakage @ Vr: 100µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
|
パッケージ: SOT-227-4, miniBLOC |
在庫7,168 |
|
|
|
IXYS |
DIODE BRIDGE 31A 800V STD FO-A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 38A
- Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
- Current - Reverse Leakage @ Vr: 300µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, FO-A
- Supplier Device Package: FO-A
|
パッケージ: 4-Square, FO-A |
在庫7,984 |
|
|
|
IXYS |
RECT BRIDGE 3PH 1800V PWS-E-1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1800V
- Current - Average Rectified (Io): 248A
- Voltage - Forward (Vf) (Max) @ If: 1.07V @ 80A
- Current - Reverse Leakage @ Vr: 200µA @ 1800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E1
- Supplier Device Package: PWS-E1
|
パッケージ: PWS-E1 |
在庫7,248 |
|
|
|
IXYS |
IC BRIDGE DRVR 3PH 500MA 48-MLP
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 8 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 600mA, 600mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 650V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN
- Supplier Device Package: 48-MLP
|
パッケージ: 48-VFQFN |
在庫5,968 |
|
|
|
IXYS |
SENSOR MONOCRYSTALLINE MOD 6X6
- Power (Watts) - Max: 6mW
- Current @ Pmpp: 12mA
- Voltage @ Pmpp: 505mV
- Current Short Circuit (Isc): 168mA
- Type: Monocrystalline
- Voltage - Open Circuit: 630mV
- Operating Temperature: -40°C ~ 85°C
- Package / Case: Cells
- Size / Dimension: 0.236" L x 0.236" W (6.00mm x 6.00mm)
|
パッケージ: Cells |
在庫5,004 |
|