ページ 86 - IXYS 製品 | Heisener Electronics

部品番号	メーカ	説明	パッケージ	在庫
IXGL50N60BD1	IXYS	IGBT 600V ISOPLUS264 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: ISOPLUS264? Supplier Device Package: ISOPLUS264?	パッケージ: ISOPLUS264?	在庫2,016
IXGC12N60C	IXYS	IGBT 600V 15A 85W ISOPLUS220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 85W Switching Energy: 90µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 20ns/60ns Test Condition: 480V, 12A, 18 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220?	パッケージ: ISOPLUS220?	在庫3,648
IXXH60N65B4H1	IXYS	IGBT 650V 116A 380W TO247AD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 116A Current - Collector Pulsed (Icm): 230A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Power - Max: 380W Switching Energy: 3.13mJ (on), 1.15mJ (off) Input Type: Standard Gate Charge: 95nC Td (on/off) @ 25°C: 37ns/145ns Test Condition: 400V, 60A, 5 Ohm, 15V Reverse Recovery Time (trr): 150ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXXH)	パッケージ: TO-247-3	在庫4,816
VWI6-12P1	IXYS	MODULE IGBT 6PACK 1200V ECO-PAC2 IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 6A Power - Max: 40W Vce(on) (Max) @ Vge, Ic: 4.6V @ 15V, 4A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 0.205nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	パッケージ: ECO-PAC2	在庫6,112
MUBW25-06A6K	IXYS	MODULE IGBT CBI E1 IGBT Type: NPT Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Power - Max: 100W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Current - Collector Cutoff (Max): 600µA Input Capacitance (Cies) @ Vce: 1.1nF @ 25V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E1 Supplier Device Package: E1	パッケージ: E1	在庫3,488
IXFH12N120P	IXYS	MOSFET N-CH 1200V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	パッケージ: TO-247-3	在庫6,688
IXFR36N50P	IXYS	MOSFET N-CH 500V 19A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	パッケージ: ISOPLUS247?	在庫7,464
IXFH170N10P	IXYS	MOSFET N-CH 100V 170A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 715W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	パッケージ: TO-247-3	在庫432,324
IXFH100N25P	IXYS	MOSFET N-CH 250V 100A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	パッケージ: TO-247-3	在庫3,552
IXFA16N60P3	IXYS	MOSFET N-CH 600V 16A TO-263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 347W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫4,896
IXTA300N04T2-7	IXYS	MOSFET N-CH 40V 300A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	パッケージ: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	在庫7,968
IXFK32N100Q3	IXYS	MOSFET N-CH 1000V 32A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	パッケージ: TO-264-3, TO-264AA	在庫2,992
IXFQ20N50P3	IXYS	MOSFET N-CH 500V 20A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	パッケージ: TO-3P-3, SC-65-3	在庫5,008
IXFP20N50P3	IXYS	MOSFET N-CH 500V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫6,096
IXFK140N30P	IXYS	MOSFET N-CH 300V 140A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	パッケージ: TO-264-3, TO-264AA	在庫4,912
GMM3X100-01X1-SMD	IXYS	MOSFET 6N-CH 100V 90A 24-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SMD, Gull Wing Supplier Device Package: 24-SMD	パッケージ: 24-SMD, Gull Wing	在庫6,000
MMO36-12IO1	IXYS	MODULE AC CTLR 1200V KAMM-MODUL Structure: 1-Phase Controller - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 18A Current - On State (It (RMS)) (Max): 28A Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 65mA Current - Non Rep. Surge 50, 60Hz (Itsm): 360A, 390A Current - Hold (Ih) (Max): 100mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	パッケージ: Module	在庫7,536
MCO100-12IO1	IXYS	MOD THYRISTOR SGL 1200V SOT-227B Structure: Single Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 99A Current - On State (It (RMS)) (Max): 156A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1500A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC	パッケージ: SOT-227-4, miniBLOC	在庫4,784
MCO500-16IO1	IXYS	MOD THYRISTOR SGL 1600V Y1-CU Structure: Single Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 560A Current - On State (It (RMS)) (Max): 880A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 300mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A, 16000A Current - Hold (Ih) (Max): 300mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Y1-CU	パッケージ: Y1-CU	在庫7,648
DSAI75-18B	IXYS	DIODE AVALANCHE 1.8KV 110A DO203 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io): 110A Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6mA @ 1800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 180°C	パッケージ: DO-203AB, DO-5, Stud	在庫6,016
HTZ130B38K	IXYS	DIODE MODULE 38KV 1A Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 38000V Current - Average Rectified (Io) (per Diode): 1A Voltage - Forward (Vf) (Max) @ If: 24V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 38000V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: Module	在庫5,312
DGSK20-018A	IXYS	DIODE ARRAY SCHOTTKY 180V TO220 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 180V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.3mA @ 180V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: TO-220-3	在庫6,912
DSEC59-06BC	IXYS	DIODE ARRAY 600V 30A ISOPLUS220 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 2.51V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 250µA @ 600V Operating Temperature - Junction: -40°C ~ 175°C Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220?	パッケージ: ISOPLUS220?	在庫9,204
VBO78-08NO7	IXYS	DIODE BRIDGE 800V 76A ECO-PAC2 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 78A Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A Current - Reverse Leakage @ Vr: 100µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	パッケージ: ECO-PAC2	在庫5,600
IXDN509SIA	IXYS	IC GATE DRIVER SGL 9A 8-SOIC Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 9A, 9A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 23ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫6,512
IXFK120N60X3	IXYS	DISCRETE MOSFET 120A 600V X3 TO2 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote
IXBH42N250	IXYS	BIMOSFET TRANS 2500V 42A TO-247A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector (Ic) (Max): 104 A Current - Collector Pulsed (Icm): 400 A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A Power - Max: 500 W Switching Energy: - Input Type: Standard Gate Charge: 200 nC Td (on/off) @ 25°C: 72ns/445ns Test Condition: 1250V, 42A, 20Ohm, 15V Reverse Recovery Time (trr): 1.7 µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	パッケージ: -	Request a Quote
K4005EA480	IXYS	SCR 4.8KV W107 Voltage - Off State: 4.8 kV Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Voltage - On State (Vtm) (Max): - Current - On State (It (AV)) (Max): 4005 A Current - On State (It (RMS)) (Max): - Current - Hold (Ih) (Max): - Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz SCR Type: Standard Recovery Operating Temperature: - Mounting Type: Chassis Mount Package / Case: TO-200AF Supplier Device Package: W107	パッケージ: -	Request a Quote
IXTY2P50PA	IXYS	AUTOMOTIVE GRADE POLARPTM P-CHAN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	Request a Quote
W5984TJ400	IXYS	DIODE GEN PURP 4KV 5984A W89 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000 V Current - Average Rectified (Io): 5984A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 47 µs Current - Reverse Leakage @ Vr: 100 mA @ 4000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: W89 Operating Temperature - Junction: -40°C ~ 160°C	パッケージ: -	Request a Quote

IXGL50N60BD1

IXYS

IGBT 600V ISOPLUS264

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: ISOPLUS264?
Supplier Device Package: ISOPLUS264?

パッケージ: ISOPLUS264?

在庫2,016

IXGC12N60C

IXYS

IGBT 600V 15A 85W ISOPLUS220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 48A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 85W
Switching Energy: 90µJ (off)
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 20ns/60ns
Test Condition: 480V, 12A, 18 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220?
Supplier Device Package: ISOPLUS220?

パッケージ: ISOPLUS220?

在庫3,648

IXXH60N65B4H1

IXYS

IGBT 650V 116A 380W TO247AD

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 116A
Current - Collector Pulsed (Icm): 230A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Power - Max: 380W
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: 37ns/145ns
Test Condition: 400V, 60A, 5 Ohm, 15V
Reverse Recovery Time (trr): 150ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXXH)

パッケージ: TO-247-3

在庫4,816

VWI6-12P1

IXYS

MODULE IGBT 6PACK 1200V ECO-PAC2

IGBT Type: NPT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 6A
Power - Max: 40W
Vce(on) (Max) @ Vge, Ic: 4.6V @ 15V, 4A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 0.205nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

パッケージ: ECO-PAC2

在庫6,112

MUBW25-06A6K

IXYS

MODULE IGBT CBI E1

IGBT Type: NPT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 31A
Power - Max: 100W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Current - Collector Cutoff (Max): 600µA
Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E1
Supplier Device Package: E1

パッケージ: E1

在庫3,488

IXFH12N120P

IXYS

MOSFET N-CH 1200V 12A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫6,688

IXFR36N50P

IXYS

MOSFET N-CH 500V 19A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

パッケージ: ISOPLUS247?

在庫7,464

IXFH170N10P

IXYS

MOSFET N-CH 100V 170A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 715W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫432,324

IXFH100N25P

IXYS

MOSFET N-CH 250V 100A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 27 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫3,552

IXFA16N60P3

IXYS

MOSFET N-CH 600V 16A TO-263AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 347W (Tc)
Rds On (Max) @ Id, Vgs: 440 mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXFA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫4,896

IXTA300N04T2-7

IXYS

MOSFET N-CH 40V 300A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7 (IXTA..7)
Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

パッケージ: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

在庫7,968

IXFK32N100Q3

IXYS

MOSFET N-CH 1000V 32A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

パッケージ: TO-264-3, TO-264AA

在庫2,992

IXFQ20N50P3

IXYS

MOSFET N-CH 500V 20A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

パッケージ: TO-3P-3, SC-65-3

在庫5,008

IXFP20N50P3

IXYS

MOSFET N-CH 500V 8A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫6,096

IXFK140N30P

IXYS

MOSFET N-CH 300V 140A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1040W (Tc)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

パッケージ: TO-264-3, TO-264AA

在庫4,912

GMM3X100-01X1-SMD

IXYS

MOSFET 6N-CH 100V 90A 24-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SMD, Gull Wing
Supplier Device Package: 24-SMD

パッケージ: 24-SMD, Gull Wing

在庫6,000

MMO36-12IO1

IXYS

MODULE AC CTLR 1200V KAMM-MODUL

Structure: 1-Phase Controller - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 18A
Current - On State (It (RMS)) (Max): 28A
Voltage - Gate Trigger (Vgt) (Max): 1V
Current - Gate Trigger (Igt) (Max): 65mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 360A, 390A
Current - Hold (Ih) (Max): 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

パッケージ: Module

在庫7,536

MCO100-12IO1

IXYS

MOD THYRISTOR SGL 1200V SOT-227B

Structure: Single
Number of SCRs, Diodes: 1 SCR
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 99A
Current - On State (It (RMS)) (Max): 156A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1500A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

在庫4,784

MCO500-16IO1

IXYS

MOD THYRISTOR SGL 1600V Y1-CU

Structure: Single
Number of SCRs, Diodes: 1 SCR
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 560A
Current - On State (It (RMS)) (Max): 880A
Voltage - Gate Trigger (Vgt) (Max): 2V
Current - Gate Trigger (Igt) (Max): 300mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A, 16000A
Current - Hold (Ih) (Max): 300mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y1-CU

パッケージ: Y1-CU

在庫7,648

DSAI75-18B

IXYS

DIODE AVALANCHE 1.8KV 110A DO203

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1800V
Current - Average Rectified (Io): 110A
Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 6mA @ 1800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 180°C

パッケージ: DO-203AB, DO-5, Stud

在庫6,016

HTZ130B38K

IXYS

DIODE MODULE 38KV 1A

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 38000V
Current - Average Rectified (Io) (per Diode): 1A
Voltage - Forward (Vf) (Max) @ If: 24V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 38000V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: Module

在庫5,312

DGSK20-018A

IXYS

DIODE ARRAY SCHOTTKY 180V TO220

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 180V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.3mA @ 180V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

パッケージ: TO-220-3

在庫6,912

DSEC59-06BC

IXYS

DIODE ARRAY 600V 30A ISOPLUS220

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 2.51V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Through Hole
Package / Case: ISOPLUS220?
Supplier Device Package: ISOPLUS220?

パッケージ: ISOPLUS220?

在庫9,204

VBO78-08NO7

IXYS

DIODE BRIDGE 800V 76A ECO-PAC2

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 78A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A
Current - Reverse Leakage @ Vr: 100µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

パッケージ: ECO-PAC2

在庫5,600

IXDN509SIA

IXYS

IC GATE DRIVER SGL 9A 8-SOIC

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 30 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 9A, 9A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 25ns, 23ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫6,512

IXFK120N60X3

IXYS

DISCRETE MOSFET 120A 600V X3 TO2

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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IXBH42N250

IXYS

BIMOSFET TRANS 2500V 42A TO-247A

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 104 A
Current - Collector Pulsed (Icm): 400 A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
Power - Max: 500 W
Switching Energy: -
Input Type: Standard
Gate Charge: 200 nC
Td (on/off) @ 25°C: 72ns/445ns
Test Condition: 1250V, 42A, 20Ohm, 15V
Reverse Recovery Time (trr): 1.7 µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

パッケージ: -

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K4005EA480

IXYS

SCR 4.8KV W107

Voltage - Off State: 4.8 kV
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Voltage - On State (Vtm) (Max): -
Current - On State (It (AV)) (Max): 4005 A
Current - On State (It (RMS)) (Max): -
Current - Hold (Ih) (Max): -
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Supplier Device Package: W107

パッケージ: -

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IXTY2P50PA

IXYS

AUTOMOTIVE GRADE POLARPTM P-CHAN

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

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W5984TJ400

IXYS

DIODE GEN PURP 4KV 5984A W89

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4000 V
Current - Average Rectified (Io): 5984A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 47 µs
Current - Reverse Leakage @ Vr: 100 mA @ 4000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: W89
Operating Temperature - Junction: -40°C ~ 160°C

パッケージ: -

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