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IXYS 製品

レコード 5,468
ページ  89/183
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IXGR60N60U1
IXYS

IGBT 600V 75A 300W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
  • Power - Max: 300W
  • Switching Energy: 16mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 50ns/600ns
  • Test Condition: 480V, 60A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
パッケージ: ISOPLUS247?
在庫3,248
hot IXGH31N60
IXYS

IGBT 600V 60A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A
  • Power - Max: 150W
  • Switching Energy: 6mJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 15ns/400ns
  • Test Condition: 480V, 31A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫477,636
IXGT40N60C2
IXYS

IGBT 600V 75A 300W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 18ns/90ns
  • Test Condition: 400V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫5,872
IXGA7N60C
IXYS

IGBT 600V 14A 54W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 54W
  • Switching Energy: 70µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 9ns/65ns
  • Test Condition: 480V, 7A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,072
IXGX120N120B3
IXYS

IGBT 1200V 200A 830W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 370A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
  • Power - Max: 830W
  • Switching Energy: 5.5mJ (on), 5.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 470nC
  • Td (on/off) @ 25°C: 36ns/275ns
  • Test Condition: 600V, 100A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
パッケージ: TO-247-3
在庫5,392
IXXX100N60C3H1
IXYS

IGBT 600V 170A 695W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 170A
  • Current - Collector Pulsed (Icm): 340A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
  • Power - Max: 695W
  • Switching Energy: 2mJ (on), 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 30ns/90ns
  • Test Condition: 360V, 70A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
パッケージ: TO-247-3
在庫3,840
IXYA8N90C3D1
IXYS

IGBT 900V 20A 125W C3 TO-263AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
  • Power - Max: 125W
  • Switching Energy: 460µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.3nC
  • Td (on/off) @ 25°C: 16ns/40ns
  • Test Condition: 450V, 8A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 114ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,056
IXYP8N90C3
IXYS

IGBT 900V 20A 125W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
  • Power - Max: 125W
  • Switching Energy: 460µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.3nC
  • Td (on/off) @ 25°C: 16ns/40ns
  • Test Condition: 450V, 8A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫4,784
IXGF25N250
IXYS

IGBT 2500V 30A 114W I4-PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
  • Power - Max: 114W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
パッケージ: i4-Pac?-5 (3 leads)
在庫7,680
IXYX120N120C3
IXYS

IGBT 1200V 240A 1500W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 700A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
  • Power - Max: 1500W
  • Switching Energy: 6.75mJ (on), 5.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 412nC
  • Td (on/off) @ 25°C: 35ns/176ns
  • Test Condition: 600V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
パッケージ: TO-247-3
在庫7,584
MWI200-06A8T
IXYS

IGBT SIXPACK 225A 600V E3PACK

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 225A
  • Power - Max: 675W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1.8mA
  • Input Capacitance (Cies) @ Vce: 9nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: E3
  • Supplier Device Package: E3
パッケージ: E3
在庫2,848
hot IXTP182N055T
IXYS

MOSFET N-CH 55V 182A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫49,380
IXTF280N055T
IXYS

MOSFET N-CH 55V 160A ISOPLUS I4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS i4-PAC?
  • Package / Case: i4-Pac?-5
パッケージ: i4-Pac?-5
在庫2,784
IXFR80N60P3
IXYS

MOSFET N-CH 600V 48A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 76 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫7,392
IXTT26N50P
IXYS

MOSFET N-CH 500V 26A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫4,320
IXTQ74N15T
IXYS

MOSFET N-CH 150V 74A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
パッケージ: TO-3P-3, SC-65-3
在庫2,752
IXZR16N60
IXYS

RF MOSFET N-CHANNEL PLUS247-3

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 350W
  • Voltage - Rated: 600V
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
パッケージ: TO-247-3
在庫6,852
IXHH40N150HV
IXYS

THYRISTOR MOS 1500V 40A TO-247HV

  • Voltage - Off State: 1500V
  • Voltage - Gate Trigger (Vgt) (Max): -
  • Current - Gate Trigger (Igt) (Max): -
  • Voltage - On State (Vtm) (Max): -
  • Current - On State (It (AV)) (Max): -
  • Current - On State (It (RMS)) (Max): -
  • Current - Hold (Ih) (Max): -
  • Current - Off State (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): -
  • SCR Type: Standard Recovery
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247HV
パッケージ: TO-247-3 Variant
在庫6,112
MCO500-12IO1
IXYS

MOD THYRISTOR SGL 1200V Y1-CU

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 1200V
  • Current - On State (It (AV)) (Max): 560A
  • Current - On State (It (RMS)) (Max): 880A
  • Voltage - Gate Trigger (Vgt) (Max): 2V
  • Current - Gate Trigger (Igt) (Max): 300mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A, 16000A
  • Current - Hold (Ih) (Max): 300mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
パッケージ: Y1-CU
在庫5,584
DPF60I200HA
IXYS

DIODE ARRAY GP 200V 60A TO247AD

  • Diode Configuration: -
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD (HA)
パッケージ: TO-247-2
在庫5,168
DSB60C30HB
IXYS

DIODE ARRAY SCHOTTKY 30V TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 30V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD (HB)
パッケージ: TO-3P-3 Full Pack
在庫2,288
GBO25-12NO1
IXYS

RECT BRIDGE 1PH 1200V SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 50µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBO
  • Supplier Device Package: 4-SIP
パッケージ: 4-SIP, GBO
在庫2,864
FBO16-12N
IXYS

DIODE BRIDGE 1PHASE I4-PAC-5

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 22A
  • Voltage - Forward (Vf) (Max) @ If: 1.43V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 1200V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
パッケージ: i4-Pac?-5
在庫2,992
VBE60-06A
IXYS

DIODE BRIDGE FAST DIODE SOT-227B

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
  • Current - Reverse Leakage @ Vr: 150µA @ 600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
パッケージ: SOT-227-4, miniBLOC
在庫6,960
IXDI430CI
IXYS

IC DRVR MOSF/IGBT 30A TO220-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 8.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 18ns, 16ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
パッケージ: TO-220-5
在庫7,456
hot IXDF502PI
IXYS

IC MOSF DRIVER FAST DUAL 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7.5ns, 6.5ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫19,944
IXTM10P60
IXYS

POWER MOSFET TO-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
Request a Quote
QV8025RH5TP
IXYS

TRIAC 800V 25A TO220

  • Triac Type: Standard
  • Voltage - Off State: 800 V
  • Current - On State (It (RMS)) (Max): 25 A
  • Voltage - Gate Trigger (Vgt) (Max): 1.3 V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
  • Current - Gate Trigger (Igt) (Max): 50 mA
  • Current - Hold (Ih) (Max): 75 mA
  • Configuration: Single
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
パッケージ: -
在庫3,000
DPG30I600AHA
IXYS

POWER DIODE DISCRETES-FRED TO-24

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
パッケージ: -
Request a Quote
IXFK140N60X3
IXYS

DISCRETE MOSFET 140A 600V X3 TO2

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
Request a Quote