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Infineon Technologies 製品

レコード 16,988
ページ  101/607
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IPI80N03S4L04AKSA1
Infineon Technologies

MOSFET N-CH 30V 80A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 45µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA
在庫3,024
hot IRL7833STRRPBF
Infineon Technologies

MOSFET N-CH 30V 150A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4170pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫18,612
IPC60R299CPX1SA2
Infineon Technologies

MOSFET N-CH BARE DIE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
在庫7,056
IPP65R660CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 6A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 660 mOhm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫6,784
hot IRFR3710ZTRPBF
Infineon Technologies

MOSFET N-CH 100V 42A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2930pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 33A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫19,752
BAS 40 E6327
Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOT23-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 1µA @ 30V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫23,406
hot BTS707
Infineon Technologies

IC PWR SW 2CH 65V HISIDE PDSO20

  • Switch Type: General Purpose
  • Number of Outputs: 2
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5.8 V ~ 58 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.6A
  • Rds On (Typ): 225 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart, Status Flag
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: P-DSO-20
パッケージ: 20-SOIC (0.295", 7.50mm Width)
在庫6,512
BCR401UE6327HTSA1
Infineon Technologies

IC LED DRIVER LINEAR SC-74-6

  • Type: Linear
  • Topology: -
  • Internal Switch(s): Yes
  • Number of Outputs: 1
  • Voltage - Supply (Min): 1.4V
  • Voltage - Supply (Max): 40V
  • Voltage - Output: 40V
  • Current - Output / Channel: 65mA
  • Frequency: -
  • Dimming: PWM
  • Applications: Automotive, Lighting
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: PG-SC74-6
パッケージ: SC-74, SOT-457
在庫539,856
hot IRS21962STRPBF
Infineon Technologies

IC DVR HI SIDE DUAL 600V 16SOIC

  • Driven Configuration: High-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.6V, 3.5V
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
パッケージ: 16-SOIC (0.154", 3.90mm Width)
在庫360,000
IR25603PBF
Infineon Technologies

IC HALF BRIDGE SELF OSC 8-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 15.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 180mA, 260mA
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 45ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫3,728
hot IRS21091STRPBF
Infineon Technologies

IC DRIVER HALF BRIDGE 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫28,800
IRSM515-044DA2
Infineon Technologies

IC MOTOR DRIVER 600V 23DIP

  • Output Configuration: Half Bridge (3)
  • Applications: AC Motors
  • Interface: Logic
  • Load Type: Inductive
  • Technology: UMOS
  • Rds On (Typ): 800 mOhm
  • Current - Output / Channel: 3A
  • Current - Peak Output: 15A
  • Voltage - Supply: 13.5 V ~ 16.5 V
  • Voltage - Load: 200V (Max)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Features: Bootstrap Circuit
  • Fault Protection: UVLO
  • Mounting Type: Through Hole
  • Package / Case: 32-PowerDIP Module, 23 Leads
  • Supplier Device Package: 23-DIPA
パッケージ: 32-PowerDIP Module, 23 Leads
在庫4,432
PEF 22554 E V2.1-G
Infineon Technologies

IC LIU E1/T1/J1 160BGA

  • Function: Framer, Line Interface Unit (LIU)
  • Interface: E1, HDLC, J1, T1
  • Number of Circuits: 4
  • Voltage - Supply: 1.8V, 3.3V
  • Current - Supply: -
  • Power (Watts): -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 160-LBGA
  • Supplier Device Package: PG-LBGA-160
パッケージ: 160-LBGA
在庫6,192
PBL38621-2QNT
Infineon Technologies

PBL38621/2 - FLEXISLIC, SUBSCRIB

  • Function: Subscriber Line Interface Circuit
  • Interface: 2-Wire
  • Number of Circuits: 1
  • Voltage - Supply: 4.75V ~ 5.25V
  • Current - Supply: 4mA
  • Power (Watts): 1.5 W
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 28-LCC (J-Lead)
  • Supplier Device Package: 28-PLCC
パッケージ: -
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IPB45N06S4L08ATMA3
Infineon Technologies

MOSFET N-CH 60V 45A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
パッケージ: -
在庫8,958
CY8C6145AZI-S3F72
Infineon Technologies

IC MCU 32BIT 512KB FLASH 100TQFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 150MHz
  • Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
  • Number of I/O: 64
  • Program Memory Size: 512KB (512K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 256K x 8
  • Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
  • Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
パッケージ: -
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TLE92108231QXXUMA1
Infineon Technologies

IC MOSFET DRIVER ADAPTIVE

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 6V ~ 28V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 100mA, 100mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 950 V
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-48-31
パッケージ: -
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S6AP902A00GU1C000
Infineon Technologies

ANALOG

  • Topology: -
  • Function: -
  • Number of Outputs: -
  • Frequency - Switching: -
  • Voltage/Current - Output 1: -
  • Voltage/Current - Output 2: -
  • Voltage/Current - Output 3: -
  • w/LED Driver: -
  • w/Supervisor: -
  • w/Sequencer: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
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FS200T12A1T4BOMA1
Infineon Technologies

MODULE IGBT HYBRID PK

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
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CYT2B98BABQ0AZEGST
Infineon Technologies

TRAVEO-2 BODY ENTRYLEVEL

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
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IAUZ18N10S5L420ATMA1
Infineon Technologies

MOSFET N-CH 100V 18A TSDSON-8-32

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 8µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-32
  • Package / Case: 8-PowerTDFN
パッケージ: -
在庫8,388
TC399XP256F300SBDLXUMA2
Infineon Technologies

IC MCU 32BIT 16MB FLASH 516LFBGA

  • Core Processor: TriCore™
  • Core Size: 32-Bit 10-Core
  • Speed: 300MHz
  • Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
  • Peripherals: DMA, LVDS, PWM, WDT
  • Number of I/O: -
  • Program Memory Size: 16MB (16M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 1M x 8
  • RAM Size: 2.47M x 8
  • Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
  • Data Converters: -
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 516-LFBGA
  • Supplier Device Package: PG-LFBGA-516-10
パッケージ: -
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S25FL512SAGBHEC13
Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
パッケージ: -
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TC397XA256F300SBDKXUMA2
Infineon Technologies

IC MCU 32BIT 16MB FLASH 292LFBGA

  • Core Processor: TriCore™
  • Core Size: 32-Bit 10-Core
  • Speed: 300MHz
  • Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
  • Peripherals: DMA, LVDS, PWM, WDT
  • Number of I/O: -
  • Program Memory Size: 16MB (16M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 128K x 8
  • RAM Size: 2.52M x 8
  • Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
  • Data Converters: -
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 292-LFBGA
  • Supplier Device Package: PG-LFBGA-292-12
パッケージ: -
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CYT2B78CADQ0AZEGST
Infineon Technologies

IC MCU 32BT 1.0625MB FLSH 176QFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 160MHz
  • Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
  • Number of I/O: 152
  • Program Memory Size: 1.0625MB (1.0625M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 96K x 8
  • RAM Size: 128K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 82x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 176-LQFP
  • Supplier Device Package: 176-LQFP (24x24)
パッケージ: -
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FF900R12IE4VBOSA1
Infineon Technologies

IGBT MOD 1200V 900A 5100W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 900 A
  • Power - Max: 5100 W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
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XDPS2201XXUMA1
Infineon Technologies

DIGITAL CHARGER/ADAPTER

  • Output Type: Transistor Driver
  • Function: Step-Up/Step-Down
  • Output Configuration: Positive
  • Topology: Flyback
  • Number of Outputs: 1
  • Output Phases: 1
  • Voltage - Supply (Vcc/Vdd): 10V ~ 24V
  • Frequency - Switching: 20kHz ~ 250kHz
  • Duty Cycle (Max): -
  • Synchronous Rectifier: No
  • Clock Sync: No
  • Serial Interfaces: -
  • Control Features: Enable, Phase Control, Soft Start
  • Operating Temperature: -25°C ~ 125°C (TJ)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
  • Supplier Device Package: PG-DSO-14-66
パッケージ: -
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CYAT817AZA98-5B002
Infineon Technologies

PSOC BASED - TRUETOUCH

  • Touchscreen: 2 Wire Capacitive
  • Resolution (Bits): -
  • Interface: I2C, SPI
  • Voltage Reference: -
  • Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
  • Current - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 128-LQFP
  • Supplier Device Package: 128-TQFP (14x20)
パッケージ: -
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