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Infineon Technologies 製品

レコード 16,988
ページ  120/567
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IRG5U200HF12B
Infineon Technologies

MOD IGBT 1200V 200A POWIR 62

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 285A
  • Power - Max: 1250W
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 200A
  • Current - Collector Cutoff (Max): 3mA
  • Input Capacitance (Cies) @ Vce: 22.7nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 62 Module
  • Supplier Device Package: POWIR? 62
パッケージ: POWIR? 62 Module
在庫3,520
BSO080P03SNTMA1
Infineon Technologies

MOSFET P-CH 30V 12.6A 8DSO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 1.79W (Ta)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-8
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫5,120
IPB08CN10N G
Infineon Technologies

MOSFET N-CH 100V 95A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 95A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫6,208
hot IRF9520NSPBF
Infineon Technologies

MOSFET P-CH 100V 6.8A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫60,984
hot IRF6628TRPBF
Infineon Technologies

MOSFET N-CH 25V 27A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 27A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
パッケージ: DirectFET? Isometric MX
在庫61,068
hot IRFS33N15D
Infineon Technologies

MOSFET N-CH 150V 33A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫6,012
hot IRL3302
Infineon Technologies

MOSFET N-CH 20V 39A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 23A, 7V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫16,848
IPC65R070C6X1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
在庫3,824
hot IPW60R280E6
Infineon Technologies

MOSFET N-CH 600V 13.8A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫106,344
IPW60R280P6FKSA1
Infineon Technologies

MOSFET N-CH 600V TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫10,560
hot IPB123N10N3 G
Infineon Technologies

MOSFET N-CH 100V 58A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 46µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 46A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫390,000
IRD3CH82DB6
Infineon Technologies

DIODE GEN PURP 1.2KV 150A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 355ns
  • Current - Reverse Leakage @ Vr: 3µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 150°C
パッケージ: Die
在庫6,000
TLF80511TFV33ATMA1
Infineon Technologies

IC REG LINEAR 3.3V 400MA TO252-3

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.65V @ 250mA
  • Current - Output: 400mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 46µA ~ 80µA
  • PSRR: 55dB (100Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫6,112
hot BTS660P
Infineon Technologies

SWITCH HGH SIDE CURRNT TO220-7-3

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5 V ~ 58 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 38A
  • Rds On (Typ): 7.2 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-220-7 (Formed Leads)
  • Supplier Device Package: P-TO220-7
パッケージ: TO-220-7 (Formed Leads)
在庫31,560
BGS 12A TR E6327
Infineon Technologies

IC SWITCH RF SPDT FWLP-6-1

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 3GHz
  • Isolation @ Frequency: 27dB @ 2GHz
  • Insertion Loss @ Frequency: 0.6dB @ 2GHz
  • IIP3: -
  • Topology: Reflective
  • Circuit: SPDT
  • P1dB: -
  • Features: DC Blocked, Single Line Control
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • RF Type: General Purpose
  • Package / Case: 6-XFBGA, WLCSP
  • Supplier Device Package: FWLP-6
パッケージ: 6-XFBGA, WLCSP
在庫8,118
CYT2B63CADQ0AZEGST
Infineon Technologies

IC MCU 32BIT 576KB FLASH 64LQFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 80MHz
  • Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
  • Number of I/O: 49
  • Program Memory Size: 576KB (576K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 64K x 8
  • RAM Size: 64K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 22x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (10x10)
パッケージ: -
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IRFP4127PBFAKMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 341W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 44A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
パッケージ: -
Request a Quote
SAF-XC164N-8F40FBB
Infineon Technologies

IC MCU 16BIT 64KB FLASH 100TQFP

  • Core Processor: C166SV2
  • Core Size: 16-Bit
  • Speed: 40MHz
  • Connectivity: EBI/EMI, SPI, UART/USART
  • Peripherals: PWM, WDT
  • Number of I/O: 79
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 6K x 8
  • Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
  • Data Converters: -
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: PG-TQFP-100-5
パッケージ: -
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F450R12KS4BOSA1
Infineon Technologies

IGBT MOD 1200V 70A 355W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 70 A
  • Power - Max: 355 W
  • Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
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IR35412MTRPBFAUMA1
Infineon Technologies

INT. POWERSTAGE/DRIVER

  • Applications: Controller, DDR, Intel VR12, AMD SVI
  • Voltage - Input: 3.3V
  • Number of Outputs: 2
  • Voltage - Output: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-VFQFN Exposed Pad
  • Supplier Device Package: 40-QFN (6x6)
パッケージ: -
在庫15,000
IPB70P04P409ATMA2
Infineon Technologies

MOSFET_(20V 40V) PG-TO263-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
パッケージ: -
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S29GL128S90DHA020
Infineon Technologies

IC FLASH 128MBIT CFI 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 128Mbit
  • Memory Interface: CFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 90 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (9x9)
パッケージ: -
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IPDQ65R060CFD7XTMA1
Infineon Technologies

HIGH POWER_NEW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 820µA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 272W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-22-1
  • Package / Case: 22-PowerBSOP Module
パッケージ: -
在庫2,235
IDWD10G120C5XKSA1
Infineon Technologies

DIODE SIL CARB 1.2KV 34A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 34A
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
  • Capacitance @ Vr, F: 730pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
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CYT2B77BADQ0AZEGS
Infineon Technologies

IC MCU 32BT 1.0625MB FLSH 144QFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 160MHz
  • Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
  • Number of I/O: 122
  • Program Memory Size: 1.0625MB (1.0625M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 96K x 8
  • RAM Size: 128K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 72x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-LQFP
  • Supplier Device Package: 144-LQFP (20x20)
パッケージ: -
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ISC046N13NM6ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
Request a Quote
CY9AFB42LAPMC-G-JNE2
Infineon Technologies

MULTI-MARKET MCUS

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit
  • Speed: 40MHz
  • Connectivity: CSIO, I2C, UART/USART, USB
  • Peripherals: DMA, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 51
  • Program Memory Size: 160KB (160K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
  • Data Converters: A/D 12x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (12x12)
パッケージ: -
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CG8206AA
Infineon Technologies

IC SRAM MICROPOWER

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
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CY8C4125LQS-S413
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 34
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-UFQFN Exposed Pad
  • Supplier Device Package: 40-QFN (6x6)
パッケージ: -
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BSM50GX120DN2BOSA1
Infineon Technologies

IGBT MODULE 2 LOW PWR ECONO2-2

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
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