ページ 13 - Infineon Technologies 製品

部品番号	メーカ	説明	パッケージ	在庫
IRG8CH42K10F	Infineon Technologies	IGBT 1200V 40A DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: 40ns/240ns Test Condition: 600V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫3,536
IRFS4228TRLPBF	Infineon Technologies	MOSFET N-CH 150V 83A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫51,600
BSS169 E6906	Infineon Technologies	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1.8V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫5,456
IRF7460PBF	Infineon Technologies	MOSFET N-CH 20V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫4,528
BSF134N10NJ3 G	Infineon Technologies	MOSFET N-CH 100V 9A WDSON-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M? Package / Case: 3-WDSON	パッケージ: 3-WDSON	在庫7,040
IPU60R3K4CEAKMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫3,488
IRF7488TRPBF	Infineon Technologies	MOSFET N-CH 80V 6.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 29 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫6,192
IRF7853PBF	Infineon Technologies	MOSFET N-CH 100V 8.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫6,512
BCR108WH6433XTMA1	Infineon Technologies	TRANS PREBIAS NPN 250MW SOT323-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 170MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	パッケージ: SC-70, SOT-323	在庫5,696
IDK12G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 12A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 2.1mA @ 650V Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫6,144
IFX8117MEV50HTMA1	Infineon Technologies	IC REG LINEAR 5V 1A SOT223-4 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 15V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 1.25V @ 1A Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): 10mA PSRR: 75dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	パッケージ: TO-261-4, TO-261AA	在庫2,928
IR3820AMTRPBF	Infineon Technologies	IC REG BUCK ADJ 14A SYNC 15QFN Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 2.5V Voltage - Input (Max): 21V Voltage - Output (Min/Fixed): 0.6V Voltage - Output (Max): 12V Current - Output: 14A Frequency - Switching: 300kHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 15-PowerVQFN Supplier Device Package: PQFN (5x6)	パッケージ: 15-PowerVQFN	在庫5,152
BTS500501EGAAUMA1	Infineon Technologies	IC SWITCH SMART HISIDE DSO-12 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 6 V ~ 28 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 16A Rds On (Typ): 5 mOhm Input Type: - Features: Auto Restart Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad Supplier Device Package: PG-DSO-12-16	パッケージ: 12-BSOP (0.295", 7.50mm Width) Exposed Pad	在庫7,952
ILD4035E6327HTSA1	Infineon Technologies	IC LED DRVR RGLTR DIM 350MA SC74 Type: DC DC Regulator Topology: Step-Down (Buck) Internal Switch(s): Yes Number of Outputs: 1 Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 40V Voltage - Output: - Current - Output / Channel: 350mA Frequency: 120kHz Dimming: Analog, PWM Applications: Lighting Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SC-74	パッケージ: SC-74, SOT-457	在庫77,730
IR11671ASTRPBF	Infineon Technologies	IC FET DRIVER EXTERNAL Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫2,000
PEF 24902 H V2.1	Infineon Technologies	IC NETWORK TERMINATOR MQFP-64 Function: Echo Cancellation Interface: ISDN Number of Circuits: 4 Voltage - Supply: 7V Current - Supply: 1mA Power (Watts): 840mW Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 64-QFP Supplier Device Package: P-64-MQFP	パッケージ: 64-QFP	在庫4,608
TLE9260QXXUMA1	Infineon Technologies	IC SYSTSEM BASIS CHIP 48VQFN Applications: Automotive Interface: SPI Voltage - Supply: - Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-31 Mounting Type: Surface Mount	パッケージ: 48-VFQFN Exposed Pad	在庫2,064
SAK-XE164HN-16F80L AA	Infineon Technologies	IC MCU 16BIT 128KB FLASH 100LQFP Core Processor: C166SV2 Core Size: 16-Bit Speed: 80MHz Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Number of I/O: 75 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 18K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 16x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 100-LQFP Exposed Pad Supplier Device Package: PG-LQFP-100-8	パッケージ: 100-LQFP Exposed Pad	在庫7,216
XMC4400F100K512BAXUMA1	Infineon Technologies	IC MCU 32BIT 512KB FLASH 100LQFP Core Processor: ARM? Cortex?-M4 Core Size: 32-Bit Speed: 120MHz Connectivity: CAN, Ethernet, I2C, LIN, SPI, UART, USB Peripherals: DMA, I2S, LED, POR, PWM, WDT Number of I/O: 55 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 80K x 8 Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V Data Converters: A/D 24x12b, D/A 2x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 100-LQFP Exposed Pad Supplier Device Package: PG-LQFP-100-11	パッケージ: 100-LQFP Exposed Pad	在庫7,120
BGSA14RN10E6327XTSA1	Infineon Technologies	ANTENNA DEVICES Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,914
PVN013S-TPBF	Infineon Technologies	IC RELAY PHOTOVO 20V 2.5A 6-SMD Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 100 mOhm Load Current: 2.5A Voltage - Input: 1.2VDC Voltage - Load: 0 ~ 20 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 6-SMD (0.300", 7.62mm) Supplier Device Package: 6-SMT Relay Type: Relay	パッケージ: 6-SMD (0.300", 7.62mm)	在庫5,760
CHL8225G-04CRT	Infineon Technologies	IC REGULATOR PG-VQFN-40-902 Applications: Controller, GPU Core Power Voltage - Input: 3.3V Number of Outputs: 2 Voltage - Output: - Operating Temperature: 0°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Supplier Device Package: 40-QFN (6x6)	パッケージ: 40-VFQFN Exposed Pad	在庫3,040
CY8CTMA460AS-33	Infineon Technologies	PSOC BASED - TRUETOUCH Touchscreen: 2 Wire Capacitive Resolution (Bits): 32 b Interface: I2C, SPI Voltage Reference: Internal Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V Current - Supply: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	パッケージ: -	Request a Quote
S27KL0643DPBHB020	Infineon Technologies	IC PSRAM 64MBIT SPI/OCTAL 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 36ns Access Time: 36 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	パッケージ: -	Request a Quote
ISZ75DP15LMATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫15,000
TLD5097EPXUMA1	Infineon Technologies	IC LED DRV CTRL PWM 90MA 14TSDSO Type: DC DC Controller Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost) Internal Switch(s): No Number of Outputs: 1 Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 45V Voltage - Output: 4.5V ~ 5.5V Current - Output / Channel: 90mA Frequency: 100kHz ~ 500kHz Dimming: Analog, PWM Applications: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-TSDSO-14	パッケージ: -	在庫17,685
SPD07N60C3	Infineon Technologies	MOSFET N-CH 600V 7.3A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	Request a Quote
F3L100R12W2H3B11BPSA1	Infineon Technologies	IGBT MOD 1200V 100A 375W IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Power - Max: 375 W Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: -	Request a Quote
DD104N12KAHPSA1	Infineon Technologies	DIODE MOD GP 1200V 104A POWRBLOK Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io) (per Diode): 104A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1200 V Operating Temperature - Junction: 150°C Mounting Type: Chassis Mount Package / Case: POW-R-BLOK™ Module Supplier Device Package: POW-R-BLOK™ Module	パッケージ: -	Request a Quote
FZ1800R12HE4B9HOSA2	Infineon Technologies	IGBT MODULE 1200V 2735A IGBT Type: Trench Field Stop Configuration: Single Switch Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 2735 A Power - Max: 11000 W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1800A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 110 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: -	Request a Quote

IRG8CH42K10F

Infineon Technologies

IGBT 1200V 40A DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: 230nC
Td (on/off) @ 25°C: 40ns/240ns
Test Condition: 600V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: Die

在庫3,536

IRFS4228TRLPBF

Infineon Technologies

MOSFET N-CH 150V 83A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫51,600

BSS169 E6906

Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V
Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫5,456

IRF7460PBF

Infineon Technologies

MOSFET N-CH 20V 12A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫4,528

BSF134N10NJ3 G

Infineon Technologies

MOSFET N-CH 100V 9A WDSON-2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 30A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MG-WDSON-2, CanPAK M?
Package / Case: 3-WDSON

パッケージ: 3-WDSON

在庫7,040

IPU60R3K4CEAKMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫3,488

IRF7488TRPBF

Infineon Technologies

MOSFET N-CH 80V 6.3A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 29 mOhm @ 3.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫6,192

IRF7853PBF

Infineon Technologies

MOSFET N-CH 100V 8.3A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫6,512

BCR108WH6433XTMA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 170MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

パッケージ: SC-70, SOT-323

在庫5,696

IDK12G65C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 650V 12A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 2.1mA @ 650V
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫6,144

IFX8117MEV50HTMA1

Infineon Technologies

IC REG LINEAR 5V 1A SOT223-4

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 15V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.25V @ 1A
Current - Output: 1A
Current - Quiescent (Iq): -
Current - Supply (Max): 10mA
PSRR: 75dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

パッケージ: TO-261-4, TO-261AA

在庫2,928

IR3820AMTRPBF

Infineon Technologies

IC REG BUCK ADJ 14A SYNC 15QFN

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 2.5V
Voltage - Input (Max): 21V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 12V
Current - Output: 14A
Frequency - Switching: 300kHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 15-PowerVQFN
Supplier Device Package: PQFN (5x6)

パッケージ: 15-PowerVQFN

在庫5,152

BTS500501EGAAUMA1

Infineon Technologies

IC SWITCH SMART HISIDE DSO-12

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 6 V ~ 28 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 16A
Rds On (Typ): 5 mOhm
Input Type: -
Features: Auto Restart
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Supplier Device Package: PG-DSO-12-16

パッケージ: 12-BSOP (0.295", 7.50mm Width) Exposed Pad

在庫7,952

ILD4035E6327HTSA1

Infineon Technologies

IC LED DRVR RGLTR DIM 350MA SC74

Type: DC DC Regulator
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Number of Outputs: 1
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Voltage - Output: -
Current - Output / Channel: 350mA
Frequency: 120kHz
Dimming: Analog, PWM
Applications: Lighting
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SC-74

パッケージ: SC-74, SOT-457

在庫77,730

IR11671ASTRPBF

Infineon Technologies

IC FET DRIVER EXTERNAL

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫2,000

PEF 24902 H V2.1

Infineon Technologies

IC NETWORK TERMINATOR MQFP-64

Function: Echo Cancellation
Interface: ISDN
Number of Circuits: 4
Voltage - Supply: 7V
Current - Supply: 1mA
Power (Watts): 840mW
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 64-QFP
Supplier Device Package: P-64-MQFP

パッケージ: 64-QFP

在庫4,608

TLE9260QXXUMA1

Infineon Technologies

IC SYSTSEM BASIS CHIP 48VQFN

Applications: Automotive
Interface: SPI
Voltage - Supply: -
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-31
Mounting Type: Surface Mount

パッケージ: 48-VFQFN Exposed Pad

在庫2,064

SAK-XE164HN-16F80L AA

Infineon Technologies

IC MCU 16BIT 128KB FLASH 100LQFP

Core Processor: C166SV2
Core Size: 16-Bit
Speed: 80MHz
Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Number of I/O: 75
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 18K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Data Converters: A/D 16x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 100-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-100-8

パッケージ: 100-LQFP Exposed Pad

在庫7,216

XMC4400F100K512BAXUMA1

Infineon Technologies

IC MCU 32BIT 512KB FLASH 100LQFP

Core Processor: ARM? Cortex?-M4
Core Size: 32-Bit
Speed: 120MHz
Connectivity: CAN, Ethernet, I2C, LIN, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Number of I/O: 55
Program Memory Size: 512KB (512K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 80K x 8
Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
Data Converters: A/D 24x12b, D/A 2x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 100-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-100-11

パッケージ: 100-LQFP Exposed Pad

在庫7,120

BGSA14RN10E6327XTSA1

Infineon Technologies

ANTENNA DEVICES

Frequency - Lower: -
Frequency - Upper: -
Isolation @ Frequency: -
Insertion Loss @ Frequency: -
IIP3: -
Topology: -
Circuit: -
P1dB: -
Features: -
Impedance: -
Operating Temperature: -
Voltage - Supply: -
RF Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,914

PVN013S-TPBF

Infineon Technologies

IC RELAY PHOTOVO 20V 2.5A 6-SMD

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 100 mOhm
Load Current: 2.5A
Voltage - Input: 1.2VDC
Voltage - Load: 0 ~ 20 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 6-SMD (0.300", 7.62mm)
Supplier Device Package: 6-SMT
Relay Type: Relay

パッケージ: 6-SMD (0.300", 7.62mm)

在庫5,760

CHL8225G-04CRT

Infineon Technologies

IC REGULATOR PG-VQFN-40-902

Applications: Controller, GPU Core Power
Voltage - Input: 3.3V
Number of Outputs: 2
Voltage - Output: -
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Supplier Device Package: 40-QFN (6x6)

パッケージ: 40-VFQFN Exposed Pad

在庫3,040

CY8CTMA460AS-33

Infineon Technologies

PSOC BASED - TRUETOUCH

Touchscreen: 2 Wire Capacitive
Resolution (Bits): 32 b
Interface: I2C, SPI
Voltage Reference: Internal
Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V
Current - Supply: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

パッケージ: -

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S27KL0643DPBHB020

Infineon Technologies

IC PSRAM 64MBIT SPI/OCTAL 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 36ns
Access Time: 36 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

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ISZ75DP15LMATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫15,000

TLD5097EPXUMA1

Infineon Technologies

IC LED DRV CTRL PWM 90MA 14TSDSO

Type: DC DC Controller
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Number of Outputs: 1
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Voltage - Output: 4.5V ~ 5.5V
Current - Output / Channel: 90mA
Frequency: 100kHz ~ 500kHz
Dimming: Analog, PWM
Applications: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: PG-TSDSO-14

パッケージ: -

在庫17,685

SPD07N60C3

Infineon Technologies

MOSFET N-CH 600V 7.3A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

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F3L100R12W2H3B11BPSA1

Infineon Technologies

IGBT MOD 1200V 100A 375W

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Power - Max: 375 W
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: -

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DD104N12KAHPSA1

Infineon Technologies

DIODE MOD GP 1200V 104A POWRBLOK

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io) (per Diode): 104A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Operating Temperature - Junction: 150°C
Mounting Type: Chassis Mount
Package / Case: POW-R-BLOK™ Module
Supplier Device Package: POW-R-BLOK™ Module

パッケージ: -

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FZ1800R12HE4B9HOSA2

Infineon Technologies

IGBT MODULE 1200V 2735A

IGBT Type: Trench Field Stop
Configuration: Single Switch
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 2735 A
Power - Max: 11000 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1800A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: -

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