Infineon Technologies 製品

IRG4BC20K

Infineon Technologies

IGBT 600V 16A 60W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 32A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
• Power - Max: 60W
• Switching Energy: 150µJ (on), 250µJ (off)
• Input Type: Standard
• Gate Charge: 34nC
• Td (on/off) @ 25°C: 28ns/150ns
• Test Condition: 480V, 9A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: TO-220-3

IRG7T150CH12B

Infineon Technologies

MOD IGBT 1200V 150A POWIR 62

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 300A
• Power - Max: 910W
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
• Current - Collector Cutoff (Max): 2mA
• Input Capacitance (Cies) @ Vce: 20.2nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: POWIR? 62 Module
• Supplier Device Package: POWIR? 62

パッケージ: POWIR? 62 Module

IRFS3507TRLPBF

Infineon Technologies

MOSFET N-CH 75V 97A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF7807ZTR

Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IRF7473PBF

Infineon Technologies

MOSFET N-CH 100V 6.9A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3180pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IPA50R800CEXKSA2

Infineon Technologies

MOSFET N-CH 500V 4.1A TO-220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 13V
• Vgs(th) (Max) @ Id: 3.5V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 26.4W (Tc)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.5A, 13V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Full Pack
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

IPC042N03L3X1SA1

Infineon Technologies

MOSFET N-CH 30V SAWN BARE DIE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Sawn on foil
• Package / Case: Die

パッケージ: Die

IPD50R500CEAUMA1

Infineon Technologies

MOSFET N-CH 550V 7.6A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 550V
• Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 13V
• Vgs(th) (Max) @ Id: 3.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IPC50N04S5L5R5ATMA1

Infineon Technologies

N-CHANNEL_30/40V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 13µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1209pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 42W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-33
• Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

BSC265N10LSFGATMA1

Infineon Technologies

MOSFET N-CH 100V 40A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 43µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 78W (Tc)
• Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

BCX6810E6327HTSA1

Infineon Technologies

TRANS NPN 20V 1A SOT-89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
• Power - Max: 3W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PG-SOT89

パッケージ: TO-243AA

IDB06S60C

Infineon Technologies

DIODE SCHOTTKY 600V 6A D2PAK

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 80µA @ 600V
• Capacitance @ Vr, F: 280pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRU3007CW

Infineon Technologies

IC CTRL/REG SYNC BUCK 28-SOIC

• Applications: Controller, Intel Pentium? II
• Voltage - Input: 5V, 12V
• Number of Outputs: 4
• Voltage - Output: 1.3 V ~ 3.5 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

パッケージ: 28-SOIC (0.295", 7.50mm Width)

IRU1207-33CS

Infineon Technologies

IC REG LINEAR 3.3V 1A 8SOIC

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 12V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.65V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 3mA ~ 50mA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IR7106SPBF

Infineon Technologies

IC MOSFET IGBT 20V

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 700V
• Rise / Fall Time (Typ): 150ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IRSM516-076PA

Infineon Technologies

IC MICRO MCM DRIVER 23SOP

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic
• Load Type: Inductive
• Technology: IGBT
• Rds On (Typ): -
• Current - Output / Channel: 4A
• Current - Peak Output: 15A
• Voltage - Supply: 13.5 V ~ 16.5 V
• Voltage - Load: 480V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

XC886CM8FFA5VACKXUMA1

Infineon Technologies

IC MCU 8BIT 32KB FLASH 48TQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: CAN, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 1.75K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 48-TQFP
• Supplier Device Package: 48-TQFP (7x7)

パッケージ: 48-TQFP

XMC1402Q040X0128AAXUMA1

Infineon Technologies

IC MCU 32BIT 128KB FLASH 40VQFN

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 27
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 12x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-40-17

パッケージ: 40-VFQFN Exposed Pad

TDK5100-TDA5220_434_5

Infineon Technologies

KIT SAMPLE FSK TX/RX 434/868MHZ

• Type: Transmitter, Receiver
• Frequency: 434MHz, 868MHz
• For Use With/Related Products: TDA5100, TDA5220
• Supplied Contents: 2 Boards, Product Samples

パッケージ: -

CY9AF311LPMC1-G-MJE1

Infineon Technologies

IC MCU 32BIT

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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S99-50537

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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IKWH20N65WR6XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 55A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 55 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
• Power - Max: 136 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 97 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-32

パッケージ: -

S27KS0642GABHV023

Infineon Technologies

IC PSRAM 64MBIT PARALLEL 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 64Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

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PEB20571FV2-3

Infineon Technologies

DELIC-PB DSP EMBEDDED LINE CONT

• Type: -
• Interface: -
• Clock Rate: -
• Non-Volatile Memory: -
• On-Chip RAM: -
• Voltage - I/O: -
• Voltage - Core: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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S26HS512TGABHM010

Infineon Technologies

IC FLASH 512MBIT HYPERBUS 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 512Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 5.45 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

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BSC750N10NDGATMA1

Infineon Technologies

MOSFET 2N-CH 100V 3.2A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 3.2A
• Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 10V
• Vgs(th) (Max) @ Id: 4V @ 12µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
• Power - Max: 26W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4

パッケージ: -

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SIDC07D60F6X1SA3

Infineon Technologies

DIODE GEN PURP 600V 22.5A DIE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 22.5A
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -40°C ~ 175°C

パッケージ: -

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S80KS5123GABHA023

Infineon Technologies

IC PSRAM 512MBIT SPI/OCTL 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 512Mbit
• Memory Interface: SPI - Octal I/O
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

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IPA50R199CPXKSA1

Infineon Technologies

MOSFET N-CH 500V 17A TO220-FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500 V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 660µA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 139W (Tc)
• Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-31
• Package / Case: TO-220-3 Full Pack

パッケージ: -

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CY8C4147LCE-HV423T

Infineon Technologies

PSoC4

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, SmartCard, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
• Number of I/O: 8
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 8K x 8
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
• Data Converters: A/D 2x16/20b Sigma-Delta
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-QFN (6x6)

パッケージ: -