Infineon Technologies 製品

IRFU3711PBF

Infineon Technologies

MOSFET N-CH 20V 100A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

IRLI2505

Infineon Technologies

MOSFET N-CH 55V 58A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 31A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB Full-Pak
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

SPB16N50C3

Infineon Technologies

MOSFET N-CH 560V 16A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 560V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 675µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 160W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPD50N03S2L06ATMA1

Infineon Technologies

MOSFET N-CH 30V 50A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 85µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-11
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

BSO615N G

Infineon Technologies

MOSFET 2N-CH 60V 2.6A 8SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 2.6A
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V
• Vgs(th) (Max) @ Id: 2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

パッケージ: 8-SOIC (0.154", 3.90mm Width)

BBY 61-02LS E6327

Infineon Technologies

DIODE RF TUNING 10V 20MA TSSLP-2

• Capacitance @ Vr, F: -
• Capacitance Ratio: 2.45
• Capacitance Ratio Condition: -
• Voltage - Peak Reverse (Max): 10V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 2-XFDFN
• Supplier Device Package: PG-TSSLP-2

パッケージ: 2-XFDFN

IDP15E65D1XKSA1

Infineon Technologies

DIODE GEN PURP 650V 15A TO220-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 114ns
• Current - Reverse Leakage @ Vr: 40µA @ 650V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -40°C ~ 175°C

パッケージ: TO-220-2

BAS12505WH6327XTSA1

Infineon Technologies

DIODE ARRAY SCHOTTKY 25V SOT323

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 25V
• Current - Average Rectified (Io) (per Diode): 100mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 35mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150nA @ 25V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

パッケージ: SC-70, SOT-323

TLE4284DV26NTMA1

Infineon Technologies

IC REG LINEAR 2.6V 1A TO252-3-11

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 2.6V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.6mA
• PSRR: 65dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3-11

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IR3502BMTRPBF

Infineon Technologies

IC REG XPH INTEL VR11.1 32-MLPQ

• Applications: Processor
• Current - Supply: 8mA
• Voltage - Supply: 8 V ~ 16 V
• Operating Temperature: 0°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-MLPQ (5x5)

パッケージ: 32-VFQFN Exposed Pad

BTS3205NHUSA1

Infineon Technologies

IC SWITCH PWR LOSIDE SOT223-4

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 10V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 350mA
• Rds On (Typ): 700 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

パッケージ: TO-261-4, TO-261AA

IR2104PBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8DIP

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 210mA, 360mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 100ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

パッケージ: 8-DIP (0.300", 7.62mm)

AUIRS2092S

Infineon Technologies

IC AMP AUDIO 500W D 16SOIC

• Type: Class D
• Output Type: 1-Channel (Mono)
• Max Output Power x Channels @ Load: -
• Voltage - Supply: 10 V ~ 18 V
• Features: Depop
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 125°C (TA)
• Supplier Device Package: 16-SOIC
• Package / Case: 16-SOIC (0.154", 3.90mm Width)

パッケージ: 16-SOIC (0.154", 3.90mm Width)

PSB 21150 H V1.4

Infineon Technologies

IC MODULAR ISDN NT INTELL MQFP64

• Function: PC Adapter Circuit
• Interface: HDLC, ISDN, SCI
• Number of Circuits: 1
• Voltage - Supply: 3.3V
• Current - Supply: 30mA
• Power (Watts): -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 64-QFP
• Supplier Device Package: P-64-MQFP

パッケージ: 64-QFP

XMC1201T038F0064AAXUMA1

Infineon Technologies

IC MCU 32BIT 64KB FLASH 38TSSOP

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 26
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 38-TFSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-38-9

パッケージ: 38-TFSOP (0.173", 4.40mm Width)

TLE42764GVATMA1

Infineon Technologies

IC REG LIN POS ADJ 400MA TO263-5

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 20V
• Voltage Dropout (Max): 0.5V @ 250mA
• Current - Output: 400mA
• Current - Quiescent (Iq): 220µA
• Current - Supply (Max): 25mA
• PSRR: 54dB (100Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
• Supplier Device Package: TO-263-5

パッケージ: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA

FF1700XTR17IE5DBPSA1

Infineon Technologies

PP IHM I

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

SIDC56D60E6X1SA1

Infineon Technologies

DIODE GP 600V 150A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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CG8878AM

Infineon Technologies

IC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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TC399XX256F300SBDLXUMA2

Infineon Technologies

IC MCU 32BIT 16MB FLASH 516LFBGA

• Core Processor: TriCore™
• Core Size: 32-Bit 10-Core
• Speed: 300MHz
• Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
• Peripherals: DMA, LVDS, PWM, WDT
• Number of I/O: -
• Program Memory Size: 16MB (16M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 1M x 8
• RAM Size: 2.47M x 8
• Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
• Data Converters: -
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 150°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 516-LFBGA
• Supplier Device Package: PG-LFBGA-516-10

パッケージ: -

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IPN80R3K3P7ATMA1

Infineon Technologies

MOSFET N-CH 800V 1.9A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6.1W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223
• Package / Case: TO-261-4, TO-261AA

パッケージ: -

IRFB4115PBFXKMA1

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 380W (Tc)
• Rds On (Max) @ Id, Vgs: 11mOhm @ 62A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

パッケージ: -

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PEF3304HLV2-1

Infineon Technologies

TELEPHONY INTERFACE CIRCUIT

• Function: Analog Voice Access
• Interface: JTAG, PCM, SCI/SPI
• Number of Circuits: 4
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-LQFN Exposed Pad
• Supplier Device Package: 16-QFN (6x6)

パッケージ: -

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SIDC42D120H8X1SA3

Infineon Technologies

DIODE GP 1.2KV 75A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 75A
• Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -40°C ~ 175°C

パッケージ: -

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CYAT827AZA64-2200A

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

パッケージ: -

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XMC7100-F100K1088AA

Infineon Technologies

INDUSTRIAL MCUS

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 250MHz
• Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 72
• Program Memory Size: 1.088M x 8
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 192K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 37x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: 100-TEQFP (14x14)

パッケージ: -

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S6J332DJEESE20000

Infineon Technologies

TRAVEO-40NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 240MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
• Peripherals: DMA, I2S, LVD, POR, PWM, WDT
• Number of I/O: 150
• Program Memory Size: 3.0625MB (3.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 112K x 8
• RAM Size: 544K x 8
• Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
• Data Converters: A/D 48x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP Exposed Pad
• Supplier Device Package: 176-TEQFP (24x24)

パッケージ: -

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MB88101APFV-G-BND-EFE1

Infineon Technologies

IC REG CONVERTER SSOP

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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