ページ 445 - Infineon Technologies 製品

部品番号	メーカ	説明	パッケージ	在庫
IRGBC30F	Infineon Technologies	IGBT FAST 600V 31A TO-220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A Power - Max: 100W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: TO-220-3	在庫3,632
AIGW40N65F5XKSA1	Infineon Technologies	IGBT 650V TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,752
IRF6794MTRPBF	Infineon Technologies	MOSFET N-CH 25V DIRECTFET MX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 13V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.8W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	パッケージ: DirectFET? Isometric MX	在庫2,224
BSS138NL6433HTMA1	Infineon Technologies	MOSFET N-CH 60V 230MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫4,432
IRFSL4228PBF	Infineon Technologies	MOSFET N-CH 150V 83A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA	在庫5,296
SPP80N03S2L04AKSA1	Infineon Technologies	MOSFET N-CH 30V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫3,568
62-0063PBF	Infineon Technologies	MOSFET N-CH 12V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 6V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫2,272
IRF6603	Infineon Technologies	MOSFET N-CH 30V 27A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V Vgs (Max): +20V, -12V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	パッケージ: DirectFET? Isometric MT	在庫150,372
IRF3808PBF	Infineon Technologies	MOSFET N-CH 75V 140A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5310pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 82A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫90,840
BG3123E6327HTSA1	Infineon Technologies	MOSFET N-CH DUAL 8V 25MA SOT-363 Transistor Type: 2 N-Channel (Dual) Frequency: 800MHz Gain: 25dB Voltage - Test: 5V Current Rating: 25mA, 20mA Noise Figure: 1.8dB Current - Test: 14mA Power - Output: - Voltage - Rated: 8V Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	パッケージ: 6-VSSOP, SC-88, SOT-363	在庫3,424
BCR 198F E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW TSFP-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	パッケージ: SOT-723	在庫4,832
IRU1117-18CSTR	Infineon Technologies	IC REG LINEAR 1.8V 800MA 8SOIC Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 7V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 1.3V @ 1A Current - Output: 800mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,472
IRU1117-33CP	Infineon Technologies	IC REG LIN 3.3V 800MA 2-UTHINPAK Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 7V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 1.3V @ 1A Current - Output: 800mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: 2-Ultra Thin-Pak Supplier Device Package: 2-Ultra Thin-Pak	パッケージ: 2-Ultra Thin-Pak	在庫316,428
IRMCK188TR	Infineon Technologies	IC MOTOR CONTROLLER Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,248
XMC4104F64K128ABXQSA1	Infineon Technologies	IC MCU 32BIT 128KB FLASH 64LQFP Core Processor: ARM? Cortex?-M4 Core Size: 32-Bit Speed: 80MHz Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB Peripherals: DMA, I2S, LED, POR, PWM, WDT Number of I/O: 35 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 20K x 8 Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V Data Converters: A/D 10x12b; D/A 2x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 64-LQFP Exposed Pad Supplier Device Package: PG-LQFP-64-19	パッケージ: 64-LQFP Exposed Pad	在庫3,776
SAF-XC164KM-16F40F BA	Infineon Technologies	IC MCU 16BIT 128KB FLASH 64LQFP Core Processor: C166SV2 Core Size: 16-Bit Speed: 40MHz Connectivity: CAN, EBI/EMI, SPI, UART/USART Peripherals: PWM, WDT Number of I/O: 47 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V Data Converters: - Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	パッケージ: 64-LQFP	在庫4,752
SAK-C161CS-LF CA	Infineon Technologies	IC MCU 16BIT ROMLESS 128TQFP Core Processor: C166 Core Size: 16-Bit Speed: 25MHz Connectivity: CAN, EBI/EMI, I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Number of I/O: 93 Program Memory Size: - Program Memory Type: ROMless EEPROM Size: - RAM Size: 10K x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 12x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (20x20)	パッケージ: 128-LQFP	在庫6,160
XC2388C200F100LABKXUMA1	Infineon Technologies	IC MCU 16BIT 1.5MB FLASH 144LQFP Core Processor: C166SV2 Core Size: 16/32-Bit Speed: 100MHz Connectivity: CAN, EBI/EMI, FlexRay, I2C, LIN, SPI, UART/USART Peripherals: I2S, POR, PWM, WDT Number of I/O: 118 Program Memory Size: 1.56MB (1.56M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 138K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 24x10b Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 144-LQFP Exposed Pad Supplier Device Package: PG-LQFP-144	パッケージ: 144-LQFP Exposed Pad	在庫3,152
XC878CLM16FFA5VACKXUMA1	Infineon Technologies	IC MCU 8BIT 64KB FLASH 64LQFP Core Processor: XC800 Core Size: 8-Bit Speed: 27MHz Connectivity: CAN, LIN, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 40 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 3.25K x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	パッケージ: 64-LQFP	在庫7,696
BFP740E6327	Infineon Technologies	RF TRANSISTOR, X BAND, NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz Gain: 27dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	パッケージ: -	Request a Quote
S29GL512T11FHB020	Infineon Technologies	IC FLASH 512MBIT PARALLEL 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 110 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	パッケージ: -	Request a Quote
IDYH40G200C5XKSA1	Infineon Technologies	SIC DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote
IPD70P04P4L08AUMA2	Infineon Technologies	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	Request a Quote
FS100R17PE4BOSA1	Infineon Technologies	IGBT MOD 1700V 100A 600W IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 100 A Power - Max: 600 W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: -	Request a Quote
CG7600AA	Infineon Technologies	IC SRAM 18MBIT PARALLEL 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 333 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	パッケージ: -	在庫603
BSC017N04NSGATMA1	Infineon Technologies	MOSFET N-CH 40V 30A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	パッケージ: -	Request a Quote
CG9066AMT	Infineon Technologies	IC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
CY8C6347BZI-BLD44	Infineon Technologies	IC MCU 32BIT 1MB FLASH 124VFBGA Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 100MHz, 150MHz Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT Number of I/O: 84 Program Memory Size: 1MB (1M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 288K x 8 Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 124-VFBGA Supplier Device Package: 124-VFBGA (9x9)	パッケージ: -	Request a Quote

IRGBC30F

Infineon Technologies

IGBT FAST 600V 31A TO-220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 31A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
Power - Max: 100W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

パッケージ: TO-220-3

在庫3,632

AIGW40N65F5XKSA1

Infineon Technologies

IGBT 650V TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,752

IRF6794MTRPBF

Infineon Technologies

MOSFET N-CH 25V DIRECTFET MX

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 13V
Vgs (Max): ±20V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MX
Package / Case: DirectFET? Isometric MX

パッケージ: DirectFET? Isometric MX

在庫2,224

BSS138NL6433HTMA1

Infineon Technologies

MOSFET N-CH 60V 230MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫4,432

IRFSL4228PBF

Infineon Technologies

MOSFET N-CH 150V 83A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫5,296

SPP80N03S2L04AKSA1

Infineon Technologies

MOSFET N-CH 30V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫3,568

62-0063PBF

Infineon Technologies

MOSFET N-CH 12V 15A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 6V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫2,272

IRF6603

Infineon Technologies

MOSFET N-CH 30V 27A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V
Vgs (Max): +20V, -12V
FET Feature: -
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MT
Package / Case: DirectFET? Isometric MT

パッケージ: DirectFET? Isometric MT

在庫150,372

IRF3808PBF

Infineon Technologies

MOSFET N-CH 75V 140A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5310pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 82A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫90,840

BG3123E6327HTSA1

Infineon Technologies

MOSFET N-CH DUAL 8V 25MA SOT-363

Transistor Type: 2 N-Channel (Dual)
Frequency: 800MHz
Gain: 25dB
Voltage - Test: 5V
Current Rating: 25mA, 20mA
Noise Figure: 1.8dB
Current - Test: 14mA
Power - Output: -
Voltage - Rated: 8V
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

パッケージ: 6-VSSOP, SC-88, SOT-363

在庫3,424

BCR 198F E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSFP-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 190MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

パッケージ: SOT-723

在庫4,832

IRU1117-18CSTR

Infineon Technologies

IC REG LINEAR 1.8V 800MA 8SOIC

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 7V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.3V @ 1A
Current - Output: 800mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 70dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,472

IRU1117-33CP

Infineon Technologies

IC REG LIN 3.3V 800MA 2-UTHINPAK

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 7V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.3V @ 1A
Current - Output: 800mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 70dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 2-Ultra Thin-Pak
Supplier Device Package: 2-Ultra Thin-Pak

パッケージ: 2-Ultra Thin-Pak

在庫316,428

IRMCK188TR

Infineon Technologies

IC MOTOR CONTROLLER

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,248

XMC4104F64K128ABXQSA1

Infineon Technologies

IC MCU 32BIT 128KB FLASH 64LQFP

Core Processor: ARM? Cortex?-M4
Core Size: 32-Bit
Speed: 80MHz
Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Number of I/O: 35
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 20K x 8
Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
Data Converters: A/D 10x12b; D/A 2x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 64-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-64-19

パッケージ: 64-LQFP Exposed Pad

在庫3,776

SAF-XC164KM-16F40F BA

Infineon Technologies

IC MCU 16BIT 128KB FLASH 64LQFP

Core Processor: C166SV2
Core Size: 16-Bit
Speed: 40MHz
Connectivity: CAN, EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Number of I/O: 47
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
Data Converters: -
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

パッケージ: 64-LQFP

在庫4,752

SAK-C161CS-LF CA

Infineon Technologies

IC MCU 16BIT ROMLESS 128TQFP

Core Processor: C166
Core Size: 16-Bit
Speed: 25MHz
Connectivity: CAN, EBI/EMI, I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Number of I/O: 93
Program Memory Size: -
Program Memory Type: ROMless
EEPROM Size: -
RAM Size: 10K x 8
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Data Converters: A/D 12x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (20x20)

パッケージ: 128-LQFP

在庫6,160

XC2388C200F100LABKXUMA1

Infineon Technologies

IC MCU 16BIT 1.5MB FLASH 144LQFP

Core Processor: C166SV2
Core Size: 16/32-Bit
Speed: 100MHz
Connectivity: CAN, EBI/EMI, FlexRay, I2C, LIN, SPI, UART/USART
Peripherals: I2S, POR, PWM, WDT
Number of I/O: 118
Program Memory Size: 1.56MB (1.56M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 138K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Data Converters: A/D 24x10b
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 144-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-144

パッケージ: 144-LQFP Exposed Pad

在庫3,152

XC878CLM16FFA5VACKXUMA1

Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

Core Processor: XC800
Core Size: 8-Bit
Speed: 27MHz
Connectivity: CAN, LIN, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 40
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 3.25K x 8
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Data Converters: A/D 8x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

パッケージ: 64-LQFP

在庫7,696

BFP740E6327

Infineon Technologies

RF TRANSISTOR, X BAND, NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Gain: 27dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

パッケージ: -

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S29GL512T11FHB020

Infineon Technologies

IC FLASH 512MBIT PARALLEL 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 110 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

パッケージ: -

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IDYH40G200C5XKSA1

Infineon Technologies

SIC DISCRETE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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IPD70P04P4L08AUMA2

Infineon Technologies

MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Vgs (Max): +5V, -16V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

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FS100R17PE4BOSA1

Infineon Technologies

IGBT MOD 1700V 100A 600W

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 100 A
Power - Max: 600 W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: -

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CG7600AA

Infineon Technologies

IC SRAM 18MBIT PARALLEL 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

パッケージ: -

在庫603

BSC017N04NSGATMA1

Infineon Technologies

MOSFET N-CH 40V 30A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN

パッケージ: -

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CG9066AMT

Infineon Technologies

IC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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CY8C6347BZI-BLD44

Infineon Technologies

IC MCU 32BIT 1MB FLASH 124VFBGA

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 150MHz
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Number of I/O: 84
Program Memory Size: 1MB (1M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 288K x 8
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Supplier Device Package: 124-VFBGA (9x9)

パッケージ: -

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