Infineon Technologies 製品

IGW40N65F5FKSA1

Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 74A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 255W
• Switching Energy: 360µJ (on), 100µJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 19ns/160ns
• Test Condition: 400V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

パッケージ: TO-247-3

IRF3708STRRPBF

Infineon Technologies

MOSFET N-CH 30V 62A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 87W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPP50N12S3L15AKSA1

Infineon Technologies

MOSFET N-CHANNEL_100+

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

IPS60R1K0CEAKMA1

Infineon Technologies

CONSUMER

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

AUIRFS4127

Infineon Technologies

MOSFET NCH 200V 72A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: -
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PTFA080551FV4R0XTMA1

Infineon Technologies

RF MOSFET LDMOS 28V H-37265-2

• Transistor Type: LDMOS
• Frequency: 869MHz ~ 960MHz
• Gain: 18.5dB
• Voltage - Test: 28V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 450mA
• Power - Output: 55W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads
• Supplier Device Package: H-37265-2

パッケージ: 2-Flatpack, Fin Leads

BCR108SH6433XTMA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 170MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

パッケージ: 6-VSSOP, SC-88, SOT-363

IGCM15F60HAXKMA1

Infineon Technologies

IGBT 600V 24MDIP

• Type: IGBT
• Configuration: 3 Phase
• Current: 15A
• Voltage: 600V
• Voltage - Isolation: 2000Vrms
• Package / Case: 24-PowerDIP Module (1.028", 26.10mm)

パッケージ: 24-PowerDIP Module (1.028", 26.10mm)

BBY5702WH6327XTSA1

Infineon Technologies

DIODE TUNING 10V 20MA SCD80

• Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
• Capacitance Ratio: 4.5
• Capacitance Ratio Condition: C1/C4
• Voltage - Peak Reverse (Max): 10V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

パッケージ: SC-80

IRU1010-25CYTR

Infineon Technologies

IC REG LINEAR 2.5V 1A SOT223

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.3V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

パッケージ: TO-261-4, TO-261AA

TLS810B1LDV50XUMA1

Infineon Technologies

IC REG LINEAR 5V 100MA 10TSON

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.55V @ 100mA
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1µA ~ 12µA
• PSRR: 55dB (100Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 10-TFDFN Exposed Pad
• Supplier Device Package: PG-TSON-10

パッケージ: 10-TFDFN Exposed Pad

IR2132STRPBF

Infineon Technologies

IC DRIVER BRIDGE 3PHASE 28SOIC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

パッケージ: 28-SOIC (0.295", 7.50mm Width)

ICE3AR4780VJZXKLA1

Infineon Technologies

IC OFFLINE CTRLR SMPS CM 7DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 800V
• Topology: Flyback
• Voltage - Start Up: 17V
• Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
• Duty Cycle: 75%
• Frequency - Switching: 100kHz
• Power (Watts): 31W
• Fault Protection: Over Load, Over Temperature, Over Voltage
• Control Features: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: PG-DIP-7
• Mounting Type: Through Hole

パッケージ: 8-DIP (0.300", 7.62mm), 7 Leads

XMC4402F64K256ABXQSA1

Infineon Technologies

IC MCU 32BIT 256KB FLASH 64LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
• Peripherals: DMA, I2S, LED, POR, PWM, WDT
• Number of I/O: 31
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 80K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 14x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-64-19

パッケージ: 64-LQFP Exposed Pad

XE167K48F66LACFXQMA1

Infineon Technologies

IC MCU 16BIT 384KB FLASH 144LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 66MHz
• Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 118
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 34K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: 144-LQFP (20x20)

パッケージ: 144-LQFP Exposed Pad

SAK-XC866-4FRI BC

Infineon Technologies

IC MCU 8BIT 16KB FLASH 38TSSOP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 86MHz
• Connectivity: SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 19
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 768 x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 38-TFSOP (0.173", 4.40mm Width)
• Supplier Device Package: 38-TSSOP

パッケージ: 38-TFSOP (0.173", 4.40mm Width)

XC878M16FFI5VACFXUMA1

Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 27MHz
• Connectivity: SPI, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 3.25K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

パッケージ: 64-LQFP

XMC1100T038F0064ABXUMA1

Infineon Technologies

IC MCU 32BIT 64KB FLASH 38TSSOP

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 26
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 12x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 38-TFSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-38-9

パッケージ: 38-TFSOP (0.173", 4.40mm Width)

PX3877FDQGG006XUMA1

Infineon Technologies

IC REGULATOR PG-VQFN-48-2

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

IR3570AMGB13TRP

Infineon Technologies

IC REGULATOR PG-VQFN-40-901

• Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: 40-VQFN (5x5)

パッケージ: 40-VFQFN Exposed Pad

CYAT81688-100AS61

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

パッケージ: -

CY9BF566MPMC-GNE2

Infineon Technologies

IC MCU 32BIT 544KB FLASH 80LQFP

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit Single-Core
• Speed: 160MHz
• Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 63
• Program Memory Size: 544KB (544K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 16x12b SAR; D/A 2x12b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-LQFP (12x12)

パッケージ: -

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28223004A

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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2EDL8012GXUMA1

Infineon Technologies

INT. POWERSTAGE/DRIVER PG-VDSON-

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 8V ~ 17V
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): 5A, 6A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 120 V
• Rise / Fall Time (Typ): -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: PG-VDSON-8-4

パッケージ: -

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CY8C4147LQS-S463T

Infineon Technologies

IC MCU 32BIT 128KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 34
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 20x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

パッケージ: -

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IR4428STRPBF

Infineon Technologies

IC DRIVER DUAL LOW SIDE 8SOIC

• Driven Configuration: Low-Side
• Channel Type: -
• Number of Drivers: 2
• Gate Type: -
• Voltage - Supply: 6V ~ 20V
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

パッケージ: -

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FZ800R33KF2CS1NDSA1

Infineon Technologies

IGBT MODULE 3300V 1A 9600W

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 3300 V
• Current - Collector (Ic) (Max): 1 A
• Power - Max: 9600 W
• Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 800A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 100 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

パッケージ: -

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T2160N24TOFVTXPSA1

Infineon Technologies

SCR MODULE 2800V 4600A DO200AE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 2.8 kV
• Current - On State (It (AV)) (Max): 2400 A
• Current - On State (It (RMS)) (Max): 4600 A
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE

パッケージ: -

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