ページ 494 - Infineon Technologies 製品

部品番号	メーカ	説明	パッケージ	在庫
IKY75N120CH3XKSA1	Infineon Technologies	IGBT PRODUCTS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,208
IRF6726MTR1PBF	Infineon Technologies	MOSFET N-CH 30V 32A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6140pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	パッケージ: DirectFET? Isometric MT	在庫18,132
BSS169 E6327	Infineon Technologies	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1.8V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫3,600
IRF7326D2PBF	Infineon Technologies	MOSFET P-CH 30V 3.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,440
IPA65R065C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 850µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	パッケージ: TO-220-3 Full Pack	在庫5,328
AUIRF1018E	Infineon Technologies	MOSFET N-CH 60V 79A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V Vgs (Max): - FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫2,384
AUIRFR8403TRL	Infineon Technologies	MOSFET N-CH 40V 100A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3171pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 99W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 76A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫6,928
IPD30N06S215ATMA2	Infineon Technologies	MOSFET N-CH 55V 30A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1485pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫52,158
BSC120N03MSGATMA1	Infineon Technologies	MOSFET N-CH 30V 39A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	パッケージ: 8-PowerTDFN	在庫245,304
BC857CB5003XT	Infineon Technologies	TRANS PNP 45V 0.1A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫3,264
IDP08E65D1XKSA1	Infineon Technologies	DIODE GEN PURP 650V 8A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 40µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -40°C ~ 175°C	パッケージ: TO-220-2	在庫19,332
IR2133S	Infineon Technologies	IC DRIVER BRIDGE 3-PHASE 28-SOIC Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 90ns, 40ns Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	パッケージ: 28-SOIC (0.295", 7.50mm Width)	在庫278,388
IRS2004SPBF	Infineon Technologies	IC DRIVER HALF BRIDGE 200V 8SOIC Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200V Rise / Fall Time (Typ): 70ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫8,328
XMC1402T038X0128AAXUMA1	Infineon Technologies	IC MCU 32BIT 128KB FLASH 38TSSOP Core Processor: ARM? Cortex?-M0 Core Size: 32-Bit Speed: 48MHz Connectivity: I2C, LIN, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Number of I/O: 26 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 12x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,768
ESD8V0R1B02LSE6327XTSA1	Infineon Technologies	TVS DIODE 14VWM 28VC TSSLP2-1 Type: Zener Unidirectional Channels: - Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 14V (Max) Voltage - Breakdown (Min): 8.5V Voltage - Clamping (Max) @ Ipp: 28V Current - Peak Pulse (10/1000µs): 1A (8/20µs) Power - Peak Pulse: - Power Line Protection: No Applications: Automotive Capacitance @ Frequency: 4pF @ 1MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 2-XFDFN Supplier Device Package: PG-TSSLP-2	パッケージ: 2-XFDFN	在庫5,112
TDA 6192V	Infineon Technologies	IC AMP IF 5V GAIN CTRL VQFN-20 Frequency: 30MHz ~ 65MHz P1dB: - Gain: - Noise Figure: - RF Type: General Purpose Voltage - Supply: - Current - Supply: - Test Frequency: - Package / Case: 20-VFQFN Exposed Pad Supplier Device Package: 20-VQFN (3.5x3.5)	パッケージ: 20-VFQFN Exposed Pad	在庫7,128
IPS6041GPBF	Infineon Technologies	INTELLIGENT PWR SW 1CH 8SOIC Switch Type: - Number of Outputs: 1 Ratio - Input:Output: - Output Configuration: High Side Output Type: - Interface: - Voltage - Load: 6 V ~ 28 V Voltage - Supply (Vcc/Vdd): - Current - Output (Max): 1.6A Rds On (Typ): 110 mOhm Input Type: Non-Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 150°C Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,872
IDK20G120C5XTMA1	Infineon Technologies	DIODE SIL CARB 1.2KV 56A TO263-1 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 56A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 123 µA @ 1200 V Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	Request a Quote
28443776C	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
CYAT817L-128AS72	Infineon Technologies	PSOC BASED - TRUETOUCH Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: I2C, SPI, UART/USART Peripherals: PWM Number of I/O: 29 Program Memory Size: 48KB (48K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 4K x 8 Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Data Converters: - Oscillator Type: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: PG-TQFP-128-800	パッケージ: -	Request a Quote
IPLK80R900P7ATMA1	Infineon Technologies	MOSFET 800V TDSON-8 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	パッケージ: -	Request a Quote
CY9AF141MAPMC-G-MNE2	Infineon Technologies	IC MCU 32BIT 64KB FLASH 80LQFP Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Number of I/O: 66 Program Memory Size: 96KB (96K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Data Converters: A/D 17x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-LQFP (12x12)	パッケージ: -	在庫3,570
FP30R06YE3B4BOMA1	Infineon Technologies	IGBT MODULE LOW PWR EASY2-1 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
IAUCN04S7N012ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	パッケージ: -	在庫3,000
TC333LP32F200FAAKXUMA1	Infineon Technologies	IC MCU 32BIT 2MB FLASH 100TQFP Core Processor: TriCore™ Core Size: 32-Bit Single-Core Speed: 200MHz Connectivity: DMA, I2S, PWM, WDT Peripherals: DMA, I2S, PWM, WDT Number of I/O: - Program Memory Size: 2MB (2M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 248K x 8 Voltage - Supply (Vcc/Vdd): 3.3V, 5V Data Converters: - Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-TQFP Exposed Pad Supplier Device Package: PG-TQFP-100-23	パッケージ: -	在庫3,000
FP50R12N2T7BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO2B-711 IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A Current - Collector Cutoff (Max): 10 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2B	パッケージ: -	Request a Quote
TLE7183QUXUMA8	Infineon Technologies	DRIVER_IC Motor Type - Stepper: - Motor Type - AC, DC: Brushless DC (BLDC) Function: Controller - Commutation, Direction Management Output Configuration: Pre-Driver - Half Bridge (3) Interface: Parallel Technology: Power MOSFET Step Resolution: - Applications: - Current - Output: - Voltage - Supply: 5.5V ~ 20V Voltage - Load: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-TQFP Exposed Pad Supplier Device Package: PG-TQFP-48-8	パッケージ: -	Request a Quote
TDA386400100AUMA1	Infineon Technologies	IC REG 36QFN Function: - Output Configuration: - Topology: - Output Type: - Number of Outputs: - Voltage - Input (Min): - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Current - Output: - Frequency - Switching: - Synchronous Rectifier: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
S6E2C2AJ0AGB1000G	Infineon Technologies	IC MCU 32BIT 2MB FLASH 192FBGA Core Processor: ARM® Cortex®-M4F Core Size: 32-Bit Speed: 200MHz Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB Peripherals: DMA, I2S, LVD, POR, PWM, WDT Number of I/O: 152 Program Memory Size: 2MB (2M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 256K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 32x12b; D/A 2x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 192-LFBGA Supplier Device Package: 192-FBGA (12x12)	パッケージ: -	在庫5,040
S29GL512S12DHE013	Infineon Technologies	PNOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 512Mbit Memory Interface: CFI Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 120 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (9x9)	パッケージ: -	Request a Quote

IKY75N120CH3XKSA1

Infineon Technologies

IGBT PRODUCTS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,208

IRF6726MTR1PBF

Infineon Technologies

MOSFET N-CH 30V 32A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6140pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MT
Package / Case: DirectFET? Isometric MT

パッケージ: DirectFET? Isometric MT

在庫18,132

BSS169 E6327

Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V
Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫3,600

IRF7326D2PBF

Infineon Technologies

MOSFET P-CH 30V 3.6A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±20V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,440

IPA65R065C7XKSA1

Infineon Technologies

MOSFET N-CH 650V TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫5,328

AUIRF1018E

Infineon Technologies

MOSFET N-CH 60V 79A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫2,384

AUIRFR8403TRL

Infineon Technologies

MOSFET N-CH 40V 100A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3171pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 76A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫6,928

IPD30N06S215ATMA2

Infineon Technologies

MOSFET N-CH 55V 30A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1485pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫52,158

BSC120N03MSGATMA1

Infineon Technologies

MOSFET N-CH 30V 39A TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

在庫245,304

BC857CB5003XT

Infineon Technologies

TRANS PNP 45V 0.1A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫3,264

IDP08E65D1XKSA1

Infineon Technologies

DIODE GEN PURP 650V 8A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 40µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C

パッケージ: TO-220-2

在庫19,332

IR2133S

Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 28-SOIC

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 90ns, 40ns
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

パッケージ: 28-SOIC (0.295", 7.50mm Width)

在庫278,388

IRS2004SPBF

Infineon Technologies

IC DRIVER HALF BRIDGE 200V 8SOIC

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫8,328

XMC1402T038X0128AAXUMA1

Infineon Technologies

IC MCU 32BIT 128KB FLASH 38TSSOP

Core Processor: ARM? Cortex?-M0
Core Size: 32-Bit
Speed: 48MHz
Connectivity: I2C, LIN, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Number of I/O: 26
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
Data Converters: A/D 12x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,768

ESD8V0R1B02LSE6327XTSA1

Infineon Technologies

TVS DIODE 14VWM 28VC TSSLP2-1

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 14V (Max)
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: No
Applications: Automotive
Capacitance @ Frequency: 4pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-XFDFN
Supplier Device Package: PG-TSSLP-2

パッケージ: 2-XFDFN

在庫5,112

TDA 6192V

Infineon Technologies

IC AMP IF 5V GAIN CTRL VQFN-20

Frequency: 30MHz ~ 65MHz
P1dB: -
Gain: -
Noise Figure: -
RF Type: General Purpose
Voltage - Supply: -
Current - Supply: -
Test Frequency: -
Package / Case: 20-VFQFN Exposed Pad
Supplier Device Package: 20-VQFN (3.5x3.5)

パッケージ: 20-VFQFN Exposed Pad

在庫7,128

IPS6041GPBF

Infineon Technologies

INTELLIGENT PWR SW 1CH 8SOIC

Switch Type: -
Number of Outputs: 1
Ratio - Input:Output: -
Output Configuration: High Side
Output Type: -
Interface: -
Voltage - Load: 6 V ~ 28 V
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): 1.6A
Rds On (Typ): 110 mOhm
Input Type: Non-Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 150°C
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,872

IDK20G120C5XTMA1

Infineon Technologies

DIODE SIL CARB 1.2KV 56A TO263-1

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 56A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

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28443776C

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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CYAT817L-128AS72

Infineon Technologies

PSOC BASED - TRUETOUCH

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Number of I/O: 29
Program Memory Size: 48KB (48K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 4K x 8
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Data Converters: -
Oscillator Type: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: PG-TQFP-128-800

パッケージ: -

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IPLK80R900P7ATMA1

Infineon Technologies

MOSFET 800V TDSON-8

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

パッケージ: -

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CY9AF141MAPMC-G-MNE2

Infineon Technologies

IC MCU 32BIT 64KB FLASH 80LQFP

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Number of I/O: 66
Program Memory Size: 96KB (96K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Data Converters: A/D 17x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-LQFP (12x12)

パッケージ: -

在庫3,570

FP30R06YE3B4BOMA1

Infineon Technologies

IGBT MODULE LOW PWR EASY2-1

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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IAUCN04S7N012ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

パッケージ: -

在庫3,000

TC333LP32F200FAAKXUMA1

Infineon Technologies

IC MCU 32BIT 2MB FLASH 100TQFP

Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Speed: 200MHz
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Number of I/O: -
Program Memory Size: 2MB (2M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 248K x 8
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Data Converters: -
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TQFP Exposed Pad
Supplier Device Package: PG-TQFP-100-23

パッケージ: -

在庫3,000

FP50R12N2T7BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-711

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2B

パッケージ: -

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TLE7183QUXUMA8

Infineon Technologies

DRIVER_IC

Motor Type - Stepper: -
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Controller - Commutation, Direction Management
Output Configuration: Pre-Driver - Half Bridge (3)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: 5.5V ~ 20V
Voltage - Load: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Supplier Device Package: PG-TQFP-48-8

パッケージ: -

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TDA386400100AUMA1

Infineon Technologies

IC REG 36QFN

Function: -
Output Configuration: -
Topology: -
Output Type: -
Number of Outputs: -
Voltage - Input (Min): -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Current - Output: -
Frequency - Switching: -
Synchronous Rectifier: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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S6E2C2AJ0AGB1000G

Infineon Technologies

IC MCU 32BIT 2MB FLASH 192FBGA

Core Processor: ARM® Cortex®-M4F
Core Size: 32-Bit
Speed: 200MHz
Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Number of I/O: 152
Program Memory Size: 2MB (2M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 256K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 32x12b; D/A 2x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 192-LFBGA
Supplier Device Package: 192-FBGA (12x12)

パッケージ: -

在庫5,040

S29GL512S12DHE013

Infineon Technologies

PNOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 512Mbit
Memory Interface: CFI
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 120 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)

パッケージ: -

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