ページ 5 - Infineon Technologies 製品

部品番号	メーカ	説明	パッケージ	在庫
IRG7T50FF12E	Infineon Technologies	MOD IGBT 1200V 50A 6PK POWIRECO2 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Power - Max: 340W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 6.7nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR ECO 2? Module Supplier Device Package: POWIR ECO 2?	パッケージ: POWIR ECO 2? Module	在庫5,936
IRFC4020D	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫6,608
BSS169L6906HTSA1	Infineon Technologies	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1.8V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫3,936
IPD200N15N3GBTMA1	Infineon Technologies	MOSFET N-CH 150V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫4,896
SN7002W L6327	Infineon Technologies	MOSFET N-CH 60V 230MA SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	パッケージ: SC-70, SOT-323	在庫1,010,652
IRFU4620PBF	Infineon Technologies	MOSFET N-CH 200V 24A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	パッケージ: TO-251-3 Short Leads, IPak, TO-251AA	在庫22,560
IRF3706STRRPBF	Infineon Technologies	MOSFET N-CH 20V 77A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫8,592
BSS225L6327HTSA1	Infineon Technologies	MOSFET N-CH 600V 0.09A SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 131pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫2,816
IRFU3412PBF	Infineon Technologies	MOSFET N-CH 100V 48A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	パッケージ: TO-251-3 Short Leads, IPak, TO-251AA	在庫4,864
IRF540ZL	Infineon Technologies	MOSFET N-CH 100V 36A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA	在庫2,736
SPD11N10	Infineon Technologies	MOSFET N-CH 100V 10.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 21µA Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫596,040
IPP65R190CFDAAKSA1	Infineon Technologies	MOSFET N-CH 650V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫3,392
IRFZ44ZLPBF	Infineon Technologies	MOSFET N-CH 55V 51A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA	在庫3,328
IPB020N04N G	Infineon Technologies	MOSFET N-CH 40V 140A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	パッケージ: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	在庫2,496
IPP65R190C7FKSA1	Infineon Technologies	MOSFET N-CH 650V 13A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 290µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫7,884
IPP90R340C3XKSA1	Infineon Technologies	MOSFET N-CH 900V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫11,184
PTFA211801F V4	Infineon Technologies	IC FET RF LDMOS 180W H-37260-2 Transistor Type: LDMOS Frequency: 2.14GHz Gain: 15.5dB Voltage - Test: 28V Current Rating: 10µA Noise Figure: - Current - Test: 1.2A Power - Output: 35W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37260-2	パッケージ: 2-Flatpack, Fin Leads, Flanged	在庫3,456
IRF7103TRPBF	Infineon Technologies	MOSFET 2N-CH 50V 3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫749,892
BFP840FESDH6327XTSA1	Infineon Technologies	IC TRANSISTOR RF NPN TSFP-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.6V Frequency - Transition: 85GHz Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz Gain: 35dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: 4-TSFP	パッケージ: SC-82A, SOT-343	在庫2,224
BFP740FESDH6327XTSA1	Infineon Technologies	TRANS RF NPN 42GHZ 4.7V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 47GHz Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz Gain: 9dB ~ 31dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 45mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	パッケージ: 4-SMD, Flat Leads	在庫27,360
AUIPS71451GTR	Infineon Technologies	IC HS SWITCH CURRENT SENSE 8SO Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 6 V ~ 60 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Rds On (Typ): 75 mOhm Input Type: Non-Inverting Features: - Fault Protection: Current Limiting (Fixed), Over Temperature Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫3,664
IRS2124STRPBF	Infineon Technologies	IC DVR HI SIDE 600V 500MA 8-SOIC Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 500mA, 500mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 80ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫2,816
TDA21107	Infineon Technologies	IC DRIVER DUAL HS MOSFET 8DSO Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10.8 V ~ 13.2 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 30V Rise / Fall Time (Typ): 30ns, 40ns Operating Temperature: 0°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫9,228
CHL8510CRT	Infineon Technologies	IC GATE DRVR HI/LOW SIDE 10DFN Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10.8 V ~ 13.2 V Logic Voltage - VIL, VIH: 0.8V, 1V Current - Peak Output (Source, Sink): 3A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 35V Rise / Fall Time (Typ): 21ns, 18ns Operating Temperature: 0°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 10-VFDFN Exposed Pad Supplier Device Package: 10-DFN (3x3)	パッケージ: 10-VFDFN Exposed Pad	在庫1,398,180
IR2108SPBF	Infineon Technologies	IC DRIVER HALF BRIDGE 8SOIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 150ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫14,856
IRS2093MTRPBF	Infineon Technologies	IC DIGTAL AUDIO DVR 4-CH 48-MLPQ Type: Class D Output Type: 4-Channel (Quad) Max Output Power x Channels @ Load: - Voltage - Supply: 10 V ~ 15 V Features: Depop, Short-Circuit Protection, Shutdown Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 48-MLPQ (7x7) Package / Case: 48-VFQFN Exposed Pad	パッケージ: 48-VFQFN Exposed Pad	在庫45,756
TLE5309DE1211XUMA1	Infineon Technologies	IC ANGLE SENSOR ANLG TDSO16 For Measuring: - Technology: - Rotation Angle - Electrical, Mechanical: - Linear Range: - Output: - Output Signal: - Actuator Type: - Linearity: - Resistance: - Resistance Tolerance: - Voltage - Supply: - Mounting Type: - Termination Style: - Operating Temperature: -	パッケージ: -	在庫6,552
TDA5251XUMA1	Infineon Technologies	IC RF TXRX ISM<1GHZ 38-TFSOP Type: TxRx Only RF Family/Standard: General ISM < 1GHz Protocol: - Modulation: ASK, FSK Frequency: 315MHz Data Rate (Max): 64kbps Power - Output: 13dBm Sensitivity: -109dBm Memory Size: - Serial Interfaces: I2C, SPI GPIO: - Voltage - Supply: 2.1 V ~ 5.5 V Current - Receiving: 8.8mA ~ 9.8mA Current - Transmitting: 5.4mA ~ 18.7mA Operating Temperature: -40°C ~ 85°C Package / Case: 38-TFSOP (0.173", 4.40mm Width)	パッケージ: 38-TFSOP (0.173", 4.40mm Width)	在庫6,480
CHL8103-03CRT	Infineon Technologies	IC REG BUCK 40VQFN Output Type: - Function: - Output Configuration: - Topology: - Number of Outputs: - Output Phases: - Voltage - Supply (Vcc/Vdd): - Frequency - Switching: - Duty Cycle (Max): - Synchronous Rectifier: - Clock Sync: - Serial Interfaces: - Control Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫13,728
BTT60301ERAXUMA1	Infineon Technologies	IC PWR SW HI-SIDE Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,488

IRG7T50FF12E

Infineon Technologies

MOD IGBT 1200V 50A 6PK POWIRECO2

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Power - Max: 340W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 6.7nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR ECO 2? Module
Supplier Device Package: POWIR ECO 2?

パッケージ: POWIR ECO 2? Module

在庫5,936

IRFC4020D

Infineon Technologies

MOSFET N-CH WAFER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫6,608

BSS169L6906HTSA1

Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V
Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫3,936

IPD200N15N3GBTMA1

Infineon Technologies

MOSFET N-CH 150V 50A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫4,896

SN7002W L6327

Infineon Technologies

MOSFET N-CH 60V 230MA SOT-323

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT323-3
Package / Case: SC-70, SOT-323

パッケージ: SC-70, SOT-323

在庫1,010,652

IRFU4620PBF

Infineon Technologies

MOSFET N-CH 200V 24A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

在庫22,560

IRF3706STRRPBF

Infineon Technologies

MOSFET N-CH 20V 77A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫8,592

BSS225L6327HTSA1

Infineon Technologies

MOSFET N-CH 600V 0.09A SOT-89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 131pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT89
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫2,816

IRFU3412PBF

Infineon Technologies

MOSFET N-CH 100V 48A I-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 29A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

在庫4,864

IRF540ZL

Infineon Technologies

MOSFET N-CH 100V 36A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 92W (Tc)
Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫2,736

SPD11N10

Infineon Technologies

MOSFET N-CH 100V 10.5A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: P-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫596,040

IPP65R190CFDAAKSA1

Infineon Technologies

MOSFET N-CH 650V TO-220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫3,392

IRFZ44ZLPBF

Infineon Technologies

MOSFET N-CH 55V 51A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫3,328

IPB020N04N G

Infineon Technologies

MOSFET N-CH 40V 140A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

パッケージ: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

在庫2,496

IPP65R190C7FKSA1

Infineon Technologies

MOSFET N-CH 650V 13A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 72W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫7,884

IPP90R340C3XKSA1

Infineon Technologies

MOSFET N-CH 900V 15A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫11,184

PTFA211801F V4

Infineon Technologies

IC FET RF LDMOS 180W H-37260-2

Transistor Type: LDMOS
Frequency: 2.14GHz
Gain: 15.5dB
Voltage - Test: 28V
Current Rating: 10µA
Noise Figure: -
Current - Test: 1.2A
Power - Output: 35W
Voltage - Rated: 65V
Package / Case: 2-Flatpack, Fin Leads, Flanged
Supplier Device Package: H-37260-2

パッケージ: 2-Flatpack, Fin Leads, Flanged

在庫3,456

IRF7103TRPBF

Infineon Technologies

MOSFET 2N-CH 50V 3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫749,892

BFP840FESDH6327XTSA1

Infineon Technologies

IC TRANSISTOR RF NPN TSFP-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.6V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Gain: 35dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: 4-TSFP

パッケージ: SC-82A, SOT-343

在庫2,224

BFP740FESDH6327XTSA1

Infineon Technologies

TRANS RF NPN 42GHZ 4.7V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Gain: 9dB ~ 31dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 45mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

パッケージ: 4-SMD, Flat Leads

在庫27,360

AUIPS71451GTR

Infineon Technologies

IC HS SWITCH CURRENT SENSE 8SO

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 6 V ~ 60 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Rds On (Typ): 75 mOhm
Input Type: Non-Inverting
Features: -
Fault Protection: Current Limiting (Fixed), Over Temperature
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫3,664

IRS2124STRPBF

Infineon Technologies

IC DVR HI SIDE 600V 500MA 8-SOIC

Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 500mA, 500mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 80ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫2,816

TDA21107

Infineon Technologies

IC DRIVER DUAL HS MOSFET 8DSO

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10.8 V ~ 13.2 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 30V
Rise / Fall Time (Typ): 30ns, 40ns
Operating Temperature: 0°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫9,228

CHL8510CRT

Infineon Technologies

IC GATE DRVR HI/LOW SIDE 10DFN

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10.8 V ~ 13.2 V
Logic Voltage - VIL, VIH: 0.8V, 1V
Current - Peak Output (Source, Sink): 3A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 35V
Rise / Fall Time (Typ): 21ns, 18ns
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Supplier Device Package: 10-DFN (3x3)

パッケージ: 10-VFDFN Exposed Pad

在庫1,398,180

IR2108SPBF

Infineon Technologies

IC DRIVER HALF BRIDGE 8SOIC

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 150ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫14,856

IRS2093MTRPBF

Infineon Technologies

IC DIGTAL AUDIO DVR 4-CH 48-MLPQ

Type: Class D
Output Type: 4-Channel (Quad)
Max Output Power x Channels @ Load: -
Voltage - Supply: 10 V ~ 15 V
Features: Depop, Short-Circuit Protection, Shutdown
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 48-MLPQ (7x7)
Package / Case: 48-VFQFN Exposed Pad

パッケージ: 48-VFQFN Exposed Pad

在庫45,756

TLE5309DE1211XUMA1

Infineon Technologies

IC ANGLE SENSOR ANLG TDSO16

For Measuring: -
Technology: -
Rotation Angle - Electrical, Mechanical: -
Linear Range: -
Output: -
Output Signal: -
Actuator Type: -
Linearity: -
Resistance: -
Resistance Tolerance: -
Voltage - Supply: -
Mounting Type: -
Termination Style: -
Operating Temperature: -

パッケージ: -

在庫6,552

TDA5251XUMA1

Infineon Technologies

IC RF TXRX ISM<1GHZ 38-TFSOP

Type: TxRx Only
RF Family/Standard: General ISM < 1GHz
Protocol: -
Modulation: ASK, FSK
Frequency: 315MHz
Data Rate (Max): 64kbps
Power - Output: 13dBm
Sensitivity: -109dBm
Memory Size: -
Serial Interfaces: I2C, SPI
GPIO: -
Voltage - Supply: 2.1 V ~ 5.5 V
Current - Receiving: 8.8mA ~ 9.8mA
Current - Transmitting: 5.4mA ~ 18.7mA
Operating Temperature: -40°C ~ 85°C
Package / Case: 38-TFSOP (0.173", 4.40mm Width)

パッケージ: 38-TFSOP (0.173", 4.40mm Width)

在庫6,480

CHL8103-03CRT

Infineon Technologies

IC REG BUCK 40VQFN

Output Type: -
Function: -
Output Configuration: -
Topology: -
Number of Outputs: -
Output Phases: -
Voltage - Supply (Vcc/Vdd): -
Frequency - Switching: -
Duty Cycle (Max): -
Synchronous Rectifier: -
Clock Sync: -
Serial Interfaces: -
Control Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫13,728

BTT60301ERAXUMA1

Infineon Technologies

IC PWR SW HI-SIDE

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,488