Infineon Technologies 製品

IGW40N65H5AXKSA1

Infineon Technologies

IGBT 650V TO247-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 74A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 250W
• Switching Energy: 360µJ (on), 110µJ (off)
• Input Type: Standard
• Gate Charge: 92nC
• Td (on/off) @ 25°C: 20ns/149ns
• Test Condition: 400V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

パッケージ: TO-247-3

IRG7U100HF12B

Infineon Technologies

MOD IGBT 1200V 100A POWIR 62

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 200A
• Power - Max: 580W
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 12.5nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: POWIR? 62 Module
• Supplier Device Package: POWIR? 62

パッケージ: POWIR? 62 Module

IRLB3036GPBF

Infineon Technologies

MOSFET N-CH 60V 195A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 380W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

パッケージ: TO-220-3

IRFSL3004PBF

Infineon Technologies

MOSFET N-CH 40V 195A TO262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 195A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 380W (Tc)
• Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

IRLR7807ZTRRPBF

Infineon Technologies

MOSFET N-CH 30V 43A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR3704TRRPBF

Infineon Technologies

MOSFET N-CH 20V 75A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 90W (Tc)
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF9520NSTRL

Infineon Technologies

MOSFET P-CH 100V 6.8A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
• Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

94-4764

Infineon Technologies

MOSFET N-CH 30V 140A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

BSS192PH6327XTSA1

Infineon Technologies

MOSFET P-CH 250V 190MA SOT89

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
• Vgs(th) (Max) @ Id: 2V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT89
• Package / Case: TO-243AA

パッケージ: TO-243AA

BSC123N08NS3GATMA1

Infineon Technologies

MOSFET N-CH 80V 55A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 33µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 66W (Tc)
• Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 33A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

BCR 103T E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 2.2k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 140MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75

パッケージ: SC-75, SOT-416

ICE3PCS03GXUMA1

Infineon Technologies

IC PFC CONTROLLER CCM 8-DSO

• Mode: Continuous Conduction (CCM)
• Frequency - Switching: 21kHz ~ 250kHz
• Current - Startup: 380µA
• Voltage - Supply: 11 V ~ 25 V
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

パッケージ: 8-SOIC (0.154", 3.90mm Width)

TLE7183FXUMA3

Infineon Technologies

IC MOTOR CONTROLLER PAR 48VQFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: Automotive
• Current - Output: -
• Voltage - Supply: 5.5 V ~ 20 V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48

パッケージ: 48-VQFN Exposed Pad

ICLS8023ZXKLA1

Infineon Technologies

IC LED DRIVER OFFLINE DIM 7DIP

• Type: AC DC Offline Switcher
• Topology: Flyback
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 10.5V
• Voltage - Supply (Max): 25V
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: 65kHz
• Dimming: PWM
• Applications: -
• Operating Temperature: -25°C ~ 130°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: PG-DIP-7-1

パッケージ: 8-DIP (0.300", 7.62mm), 7 Leads

IR2183

Infineon Technologies

IC DRIVER HALF BRIDGE 600V 8-DIP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.7V
• Current - Peak Output (Source, Sink): 1.9A, 2.3A
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 40ns, 20ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

パッケージ: 8-DIP (0.300", 7.62mm)

PX3519XTMA1

Infineon Technologies

IC GATE DRIVER 8VDSON

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 8 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 2A, 2A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 30V
• Rise / Fall Time (Typ): 10ns, 10ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-VFDFN Exposed Pad
• Supplier Device Package: PG-VDSON-8

パッケージ: 8-VFDFN Exposed Pad

PEB 3086 H V1.4

Infineon Technologies

IC ISDN ACCESS CTRLR TQFP64

• Function: Subscriber Access Controller
• Interface: HDLC, IOM-2, ISDN, Parallel, SCI
• Number of Circuits: 1
• Voltage - Supply: 3.3V
• Current - Supply: 30mA
• Power (Watts): -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 64-QFP
• Supplier Device Package: P-64-MQFP

パッケージ: 64-QFP

SAK-XC2365B-40F80L

Infineon Technologies

IC MCU 16BIT 320KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 76
• Program Memory Size: 320KB (320K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 34K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-8

パッケージ: 100-LQFP Exposed Pad

CY15V116QSN-108BKXQT

Infineon Technologies

FRAM

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 16Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 108 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6.7 ns
• Voltage - Supply: 1.71V ~ 1.89V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

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D1030N22TXPSA1

Infineon Technologies

DIODE GEN PURP 2.2KV 1030A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200 V
• Current - Average Rectified (Io): 1030A
• Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 10000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 160°C

パッケージ: -

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BSM200GA120DLCHOSA1

Infineon Technologies

IGBT MOD 1200V 370A 1450W

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 370 A
• Power - Max: 1450 W
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: -

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IPS050N03LG

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

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CY9BF568RBGL-GE1

Infineon Technologies

IC MCU 32BIT 1.03125MB 144FBGA

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit Single-Core
• Speed: 160MHz
• Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 100
• Program Memory Size: 1.03125MB (1.03125M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 24x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 144-LFBGA
• Supplier Device Package: 144-FBGA (7x7)

パッケージ: -

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IAUC50N08S5N102ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 24µA
• Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-33
• Package / Case: 8-PowerTDFN

パッケージ: -

D400N22BVFXPSA1

Infineon Technologies

DIODE GEN PURP 2.2KV 450A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200 V
• Current - Average Rectified (Io): 450A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

パッケージ: -

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S25HS512TFAMHB013

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 16SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 512Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

パッケージ: -

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IPB12CN10NGATMA2

Infineon Technologies

MOSFET N-CH 100V 67A TO263-3

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

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FS13MR12W2M1HPB11BPSA1

Infineon Technologies

MOSFET

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -