Infineon Technologies 製品

IRG7PH42UD1MPBF

Infineon Technologies

IGBT 1200V 85A 313W TO247AD

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 313W
• Switching Energy: 1.21mJ (off)
• Input Type: Standard
• Gate Charge: 270nC
• Td (on/off) @ 25°C: -/270ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

パッケージ: TO-247-3

IKQ100N60TAXKSA1

Infineon Technologies

IGBT 600V TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 160A
• Current - Collector Pulsed (Icm): 400A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
• Power - Max: 714W
• Switching Energy: 3.1mJ (on), 2.5mJ (off)
• Input Type: Standard
• Gate Charge: 610nC
• Td (on/off) @ 25°C: 30ns/290ns
• Test Condition: 400V, 100A, 3.6 Ohm, 15V
• Reverse Recovery Time (trr): 225ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-46

パッケージ: TO-247-3

IKA08N65H5XKSA1

Infineon Technologies

IGBT 650V 10.8A 31.2W PG-TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 10.8A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
• Power - Max: 31.2W
• Switching Energy: 70µJ (on), 30µJ (off)
• Input Type: Standard
• Gate Charge: 22nC
• Td (on/off) @ 25°C: 11ns/115ns
• Test Condition: 400V, 4A, 48 Ohm, 15V
• Reverse Recovery Time (trr): 40ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

パッケージ: TO-220-3

AUIRFS4610

Infineon Technologies

MOSFET N-CH 100V 73A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB120N06S4H1ATMA1

Infineon Technologies

MOSFET N-CH 60V 120A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPI100N03S2-03

Infineon Technologies

MOSFET N-CH 30V 100A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

IRLR8503TRRPBF

Infineon Technologies

MOSFET N-CH 30V 44A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 62W (Tc)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRLU8113PBF

Infineon Technologies

MOSFET N-CH 30V 94A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 89W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

SPB02N60S5ATMA1

Infineon Technologies

MOSFET N-CH 600V 1.8A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLS4030TRLPBF

Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 370W (Tc)
• Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PTFA192001E1V4R250XTMA1

Infineon Technologies

IC RF POWER TRANSISTOR

• Transistor Type: LDMOS
• Frequency: 1.99GHz
• Gain: 15.9dB
• Voltage - Test: 30V
• Current Rating: -
• Noise Figure: -
• Current - Test: 1.8A
• Power - Output: 50W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-33288-2

パッケージ: 2-Flatpack, Fin Leads, Flanged

PTFB182557SHV1R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

BC817K40E6327HTSA1

Infineon Technologies

TRANS NPN 45V 0.5A SOT-23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
• Power - Max: 500mW
• Frequency - Transition: 170MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

TLE7183QUXUMA1

Infineon Technologies

IC MOTOR CONTROLLER PAR 48TQFP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: Automotive
• Current - Output: -
• Voltage - Supply: 5.5 V ~ 20 V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-TQFP Exposed Pad
• Supplier Device Package: 48-TQFP (7x7)

パッケージ: 48-TQFP Exposed Pad

ICE3B2065JXKLA1

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP 8DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 18V
• Voltage - Supply (Vcc/Vdd): 10.3 V ~ 26 V
• Duty Cycle: 75%
• Frequency - Switching: 67kHz
• Power (Watts): 57W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -25°C ~ 130°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: PG-DIP-8
• Mounting Type: Through Hole

パッケージ: 8-DIP (0.300", 7.62mm)

XC228796F80LACKXUMA1

Infineon Technologies

IC MCU 16BIT 768KB FLASH 144LQFP

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: DMA, I2S, POR, PWM, WDT
• Number of I/O: 118
• Program Memory Size: 768KB (768K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 82K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: 144-LQFP (20x20)

パッケージ: 144-LQFP Exposed Pad

XMC1202Q024X0016ABXUMA1

Infineon Technologies

IC MCU 32BIT 16KB FLASH 24VQFN

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 18
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 13x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-16-8

パッケージ: 16-TSSOP (0.173", 4.40mm Width)

SLE 66CX162PE M5.1

Infineon Technologies

IC SECURITY CTRLR 8/16BIT M5.1

• Applications: Security
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: M5.1 Chip Card Module
• Supplier Device Package: T-M5.1-9

パッケージ: M5.1 Chip Card Module

BGA 622 E6327

Infineon Technologies

IC OP AMP WIDEBAND RF SOT-343

• Frequency: 500MHz ~ 6GHz
• P1dB: -16.5dBm
• Gain: 15dB
• Noise Figure: 1dB
• RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
• Voltage - Supply: 2.75V
• Current - Supply: 10mA
• Test Frequency: 1.575GHz
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

パッケージ: SC-82A, SOT-343

CYT4BF8CDDQ0AESGS

Infineon Technologies

IC MCU 32BT 8.1875MB FLSH 176QFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Quad-Core
• Speed: 100MHz, 350MHz
• Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
• Number of I/O: 148
• Program Memory Size: 8.1875MB (8.1875M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 256 x 8
• RAM Size: 1M x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 99x12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP Exposed Pad
• Supplier Device Package: 176-TEQFP (24x24)

パッケージ: -

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CY8C4148AZES568XQLA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 84
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

パッケージ: -

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BSM50GP60GBOSA1

Infineon Technologies

IGBT MODULE 600V 70A 250W

• IGBT Type: -
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 70 A
• Power - Max: 250 W
• Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
• Current - Collector Cutoff (Max): 500 µA
• Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: -

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CY8C624ABZI-S2D44T

Infineon Technologies

IC MCU 32BIT 2MB FLASH 124VFBGA

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 150MHz
• Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, CapSense, I2S, LCD, LVD, POR, PWM, WDT
• Number of I/O: 100
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 1M x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 124-VFBGA
• Supplier Device Package: 124-VFBGA (9x9)

パッケージ: -

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T640N18TOFXPSA1

Infineon Technologies

SCR MODULE 1800V 1250A DO200AA

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 644 A
• Current - On State (It (RMS)) (Max): 1250 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: DO-200AA, A-PUK

パッケージ: -

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IPB65R065C7ATMA2

Infineon Technologies

MOSFET N-CH 650V 33A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 171W (Tc)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

94-4344PBF

Infineon Technologies

IC MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

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CP8380ATT

Infineon Technologies

IC USB TO SERIAL BRIDGE 24QFN

• Protocol: -
• Function: -
• Interface: -
• Standards: -
• Voltage - Supply: -
• Current - Supply: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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TZ530N36KOFS01HPSA1

Infineon Technologies

SCR MODULE 3.6KV 1500A MODULE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 3.6 kV
• Current - On State (It (AV)) (Max): 955 A
• Current - On State (It (RMS)) (Max): 1500 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 22A @ 50Hz
• Current - Hold (Ih) (Max): 500 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

パッケージ: -

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