Infineon Technologies 製品

IRG7T200CH12B

Infineon Technologies

MOD IGBT 1200V 200A POWIR 62

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 390A
• Power - Max: 1060W
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
• Current - Collector Cutoff (Max): 2mA
• Input Capacitance (Cies) @ Vce: 22.5nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: POWIR? 62 Module
• Supplier Device Package: POWIR? 62

パッケージ: POWIR? 62 Module

AUIRFZ48ZS

Infineon Technologies

MOSFET N-CH 55V 61A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 91W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPB80N06S2-09

Infineon Technologies

MOSFET N-CH 55V 80A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 125µA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFR3711

Infineon Technologies

MOSFET N-CH 20V 100A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR6215TRR

Infineon Technologies

MOSFET P-CH 150V 13A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IPD65R1K4CFDATMA1

Infineon Technologies

MOSFET N-CH 650V 2.8A TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 28.4W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IPD075N03LGBTMA1

Infineon Technologies

MOSFET N-CH 30V 50A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 47W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-11
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IPB015N04N G

Infineon Technologies

MOSFET N-CH 40V 120A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BFS 469L6 E6327

Infineon Technologies

TRANSISTOR RF TWIN NPN TSLP-6

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max): 5V, 10V
• Frequency - Transition: 22GHz, 9GHz
• Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
• Gain: 14.5dB
• Power - Max: 200mW, 250mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V
• Current - Collector (Ic) (Max): 50mA, 70mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: PG-TSLP-6

パッケージ: 6-XFDFN

BAR9002ELSE6327XTSA1

Infineon Technologies

DIODE PIN SGL 80V 100MA TSSLP-2

• Diode Type: PIN - Single
• Voltage - Peak Reverse (Max): 80V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
• Resistance @ If, F: 800 mOhm @ 10mA, 100MHz
• Power Dissipation (Max): 250mW
• Operating Temperature: 150°C (TJ)
• Package / Case: 2-XFDFN
• Supplier Device Package: PG-TSSLP-2-3

パッケージ: 2-XFDFN

TLE4274DV33ATMA1

Infineon Technologies

IC REG LINEAR 400MA

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 400mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

IR2101STRPBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 210mA, 360mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 100ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

TDA21201-B7

Infineon Technologies

SWITCH MOSFET/DRIVER TO263-7-2

• Output Configuration: Half Bridge
• Applications: Synchronous Buck Converters
• Interface: PWM
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): 4.8 mOhm LS, 13.3 mOhm HS
• Current - Output / Channel: 30A
• Current - Peak Output: -
• Voltage - Supply: 9 V ~ 15 V
• Voltage - Load: 9 V ~ 15 V
• Operating Temperature: -25°C ~ 125°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: Over Temperature, Shoot-Through, UVLO
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
• Supplier Device Package: P-TO263-7

パッケージ: TO-263-7, D2Pak (6 Leads + Tab)

IRS2093MTRPBF

Infineon Technologies

IC DIGTAL AUDIO DVR 4-CH 48-MLPQ

• Type: Class D
• Output Type: 4-Channel (Quad)
• Max Output Power x Channels @ Load: -
• Voltage - Supply: 10 V ~ 15 V
• Features: Depop, Short-Circuit Protection, Shutdown
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 125°C (TA)
• Supplier Device Package: 48-MLPQ (7x7)
• Package / Case: 48-VFQFN Exposed Pad

パッケージ: 48-VFQFN Exposed Pad

XMC4104F64K64ABXQSA1

Infineon Technologies

IC MCU 32BIT 64KB FLASH 64LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
• Peripherals: DMA, I2S, LED, POR, PWM, WDT
• Number of I/O: 35
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 20K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 10x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-64-19

パッケージ: 64-LQFP Exposed Pad

XE164FN40F80LAAKXUMA1

Infineon Technologies

IC MCU 16BIT 320KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 75
• Program Memory Size: 320KB (320K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 34K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-8

パッケージ: 100-LQFP Exposed Pad

SAF-C161JC-LF CA

Infineon Technologies

IC MCU 16BIT ROMLESS 128TQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: CAN, EBI/EMI, I2C, SLDM, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 93
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 10K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 128-LQFP
• Supplier Device Package: 128-TQFP (20x20)

パッケージ: 128-LQFP

SP12T-T7

Infineon Technologies

IC TIRE PRESSURE SENSOR PDSO-14

• Sensor Type: -
• Output Type: -
• Operating Temperature: -

パッケージ: -

BGSX212MA18E6327XTSA1

Infineon Technologies

CMOS SWITCH

• Frequency - Lower: 100MHz
• Frequency - Upper: 3.8GHz
• Isolation @ Frequency: 39dB @ 2.5GHz
• Insertion Loss @ Frequency: 0.9dB @ 3.5GHz
• IIP3: -
• Topology: -
• Circuit: -
• P1dB: -
• Features: -
• Impedance: 50 Ohm
• Operating Temperature: -30°C ~ 85°C
• Voltage - Supply: 2.5 V ~ 3.4 V
• RF Type: LTE
• Package / Case: 18-UFQFN Exposed Pad
• Supplier Device Package: PG-ATSLP-18

パッケージ: 18-UFQFN Exposed Pad

CHL8228G-02CRT

Infineon Technologies

IC REGULATOR PG-VQFN-56-901

• Applications: Controller, GPU Core Power
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: 0°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-VFQFN Exposed Pad
• Supplier Device Package: 56-VQFN (8x8)

パッケージ: 56-VFQFN Exposed Pad

BAS40E8224HTMA1

Infineon Technologies

AF SCHOTTKY DIODES

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

パッケージ: -

IPB083N10N3GATMA1

Infineon Technologies

MOSFET N-CH 100V 80A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 75µA
• Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

CY9AF314LPMC1-GE1

Infineon Technologies

IC MCU 32BIT 256KB FLASH 64LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 51
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 9x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

パッケージ: -

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FF2000XTR17IE5BPSA1

Infineon Technologies

PP IHM I

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

IPB80P04P4L06ATMA2

Infineon Technologies

MOSFET P-CH 40V 80A TO263-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
• Vgs (Max): +5V, -16V
• FET Feature: -
• Power Dissipation (Max): 88W (Tc)
• Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

CY25100ZXI08T

Infineon Technologies

IC FLD/FACTORY PROG SSCLK 8TSSOP

• Type: Clock Generator
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: 200MHz
• Divider/Multiplier: -
• Voltage - Supply: 3.13V ~ 3.45V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

パッケージ: -

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XMC7100D-F100K4160AA

Infineon Technologies

IC MCU 32BT 4.063MB FLSH 100QFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 250MHz
• Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 72
• Program Memory Size: 4.063MB (4.063M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 256K x 8
• RAM Size: 768K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 37x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: 100-TEQFP (14x14)

パッケージ: -

F4100R17N3E4B80BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3-586

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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