Infineon Technologies 製品

IRGPC50U

Infineon Technologies

IGBT UFAST 600V 55A TO-247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 55A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A
• Power - Max: 200W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

パッケージ: TO-247-3

IKD06N60RAATMA1

Infineon Technologies

IGBT 600V 12A 100W TO252

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
• Power - Max: 100W
• Switching Energy: 110µJ (on), 220µJ (off)
• Input Type: Standard
• Gate Charge: 48nC
• Td (on/off) @ 25°C: 12ns/127ns
• Test Condition: 400V, 6A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 68ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFZ48ZS

Infineon Technologies

MOSFET N-CH 55V 61A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 91W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AUIRL3705Z

Infineon Technologies

MOSFET N-CH 55V 86A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

パッケージ: TO-220-3

IPP60R230P6XKSA1

Infineon Technologies

MOSFET N-CH 600V TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 530µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 126W (Tc)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 6.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

パッケージ: TO-220-3

BCP 68-25 H6327

Infineon Technologies

TRANS NPN 20V 1A SOT223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
• Power - Max: 3W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

パッケージ: TO-261-4, TO-261AA

IRAMT20TP60A

Infineon Technologies

IC MOD PWR HYBRID 600V 20A

• Type: -
• Configuration: -
• Current: -
• Voltage: -
• Voltage - Isolation: -
• Package / Case: Module

パッケージ: Module

BAT5402VH6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 30V 200MA SC79-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: PG-SC79-2
• Operating Temperature - Junction: 150°C (Max)

パッケージ: SC-79, SOD-523

BTS436L2

Infineon Technologies

IC HIGH SIDE PWR SWITCH TO220-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.75 V ~ 41 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 8.8A
• Rds On (Typ): 35 mOhm
• Input Type: Non-Inverting
• Features: Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-220-5 Formed Leads
• Supplier Device Package: P-TO220-5

パッケージ: TO-220-5 Formed Leads

BTS426L1

Infineon Technologies

IC HIGH SIDE PWR SWITCH TO220-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 34 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 5.8A
• Rds On (Typ): 50 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-220-5 Formed Leads
• Supplier Device Package: TO-220AB/5

パッケージ: TO-220-5 Formed Leads

IRMCF341TR

Infineon Technologies

IC MOTOR CONTRLLR I2C/SPI 64MQFP

• Motor Type - Stepper: -
• Motor Type - AC, DC: AC, Synchronous
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: I2C, RS-232, SPI
• Technology: IGBT
• Step Resolution: -
• Applications: Appliance
• Current - Output: -
• Voltage - Supply: 1.62 V ~ 1.98 V, 3 V ~ 3.6 V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-MQFP (10x10)

パッケージ: 64-LQFP

ILD4120E6327XUMA1

Infineon Technologies

IC LED DRVR RGLTR DIM 1.2A 8DSO

• Type: DC DC Regulator
• Topology: Step-Down (Buck)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 4.5V
• Voltage - Supply (Max): 40V
• Voltage - Output: -
• Current - Output / Channel: 1.2A
• Frequency: 500kHz
• Dimming: Analog, PWM
• Applications: Lighting
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-DSO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

TUA6034TCUMA1

Infineon Technologies

IC MIXER/OSC/PLL DIGITAL TSSOP38

• Type: Tuner
• Applications: NTSC, PAL
• Mounting Type: Surface Mount
• Package / Case: 38-TFSOP (0.173", 4.40mm Width)
• Supplier Device Package: P-TSSOP-38

パッケージ: 38-TFSOP (0.173", 4.40mm Width)

ICE2QS03GTXUMA1

Infineon Technologies

IC CTRLR PWM QUASI-RES DSO8

• Output Isolation: -
• Internal Switch(s): -
• Voltage - Breakdown: -
• Topology: -
• Voltage - Start Up: -
• Voltage - Supply (Vcc/Vdd): -
• Duty Cycle: -
• Frequency - Switching: -
• Power (Watts): -
• Fault Protection: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

パッケージ: -

XDP700002XUMA1

Infineon Technologies

CONTROLLER

• Protocol: -
• Function: -
• Interface: -
• Standards: -
• Voltage - Supply: -
• Current - Supply: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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FF6MR12KM1BOSA1

Infineon Technologies

SIC 2N-CH 1200V 250A AG-62MM

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
• Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V
• Vgs(th) (Max) @ Id: 5.15V @ 80mA
• Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-62MM

パッケージ: -

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ISZ24DP10LMATMA1

Infineon Technologies

TRENCH >=100V

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 9.7A
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-25
• Package / Case: 8-PowerTDFN

パッケージ: -

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FF11MR12W1M1PB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1B-2

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
• Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
• Vgs(th) (Max) @ Id: 5.55V @ 40mA
• Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1B-2

パッケージ: -

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IPW65R090CFD7XKSA1

Infineon Technologies

HIGH POWER_NEW

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 630µA
• Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 127W (Tc)
• Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

パッケージ: -

TLE9883QTA62XUMA1

Infineon Technologies

EMBEDDED POWER

• Applications: BLDC Controller
• Core Processor: ARM® Cortex®-M3
• Program Memory Type: EEPROM (8kB), FLASH (272kB)
• Controller Series: TLE988x
• RAM Size: 31K x 8
• Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
• Number of I/O: 8
• Voltage - Supply: 5.5V ~ 28V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-TQFP Exposed Pad
• Supplier Device Package: PG-TQFP-48-10

パッケージ: -

BC817-25B5000

Infineon Technologies

BIPOLAR GENERAL PURPOSE TRANSIST

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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S25HL01GTFABHV030

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

パッケージ: -

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IRLH6224TR2PBF

Infineon Technologies

MOSFET N CH 20V 28A PQFN 5X6 MM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 105A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1.1V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 10 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 4.5V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (5x6)
• Package / Case: 8-PowerTDFN

パッケージ: -

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FS150R07PE4BOSA1

Infineon Technologies

IGBT MOD 650V 150A 430W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 150 A
• Power - Max: 430 W
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: -

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IAUC100N10S5L054ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 101A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 64µA
• Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3744 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-34
• Package / Case: 8-PowerTDFN

パッケージ: -

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CY8C4248FNI-BL553T

Infineon Technologies

IC MCU 32BIT 256KB FLASH 76WLCSP

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit Single-Core
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA , LVD, POR, PWM, SmartCard, SmartSense, WDT
• Number of I/O: 36
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b; D/A 1x7b, 1x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 76-UFBGA, WLCSP
• Supplier Device Package: 76-WLCSP (4.04x3.87)

パッケージ: -

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IRFC140NB

Infineon Technologies

MOSFET 100V 33A DIE

• FET Type: -
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 33A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 44mOhm @ 33A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

パッケージ: -

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AIMBG75R016M1HXTMA1

Infineon Technologies

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -