ページ 491 - メモリ | 集積回路（IC） | Heisener Electronics
連絡先
SalesDept@heisener.com +86-755-83210559 ext. 805
ログイン/登録
Language Translation

* Please refer to the English Version as our Official Version.

BOM
カート 0

メモリ

レコード 62,144
ページ  491/2,220
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IDT71V67802S150PFI
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
パッケージ: 100-LQFP
在庫3,824
SRAM
SRAM - Synchronous
9Mb (512K x 18)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
hot IDT71V124SA12Y8
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 32-SOJ
パッケージ: 32-BSOJ (0.400", 10.16mm Width)
在庫2,000
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
32-BSOJ (0.400", 10.16mm Width)
32-SOJ
IS45S16400F-7TLA1-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 143MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
パッケージ: 54-TSOP (0.400", 10.16mm Width)
在庫3,072
DRAM
SDRAM
64Mb (4M x 16)
Parallel
143MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MT46V8M16TG-6T IT:D TR
Micron Technology Inc.

IC SDRAM 128MBIT 167MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP
パッケージ: 66-TSSOP (0.400", 10.16mm Width)
在庫3,792
DRAM
SDRAM - DDR
128Mb (8M x 16)
Parallel
167MHz
15ns
700ps
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP
CY7C1548KV18-400BZXC
Cypress Semiconductor Corp

IC SRAM 72MBIT 400MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II+
  • Memory Size: 72Mb (4M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
パッケージ: 165-LBGA
在庫2,880
SRAM
SRAM - Synchronous, DDR II+
72Mb (4M x 18)
Parallel
400MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
7130LA55C
IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 55NS 48DIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 48-DIP (0.600", 15.24mm)
  • Supplier Device Package: 48-SIDE BRAZED
パッケージ: 48-DIP (0.600", 15.24mm)
在庫7,472
SRAM
SRAM - Dual Port, Asynchronous
8Kb (1K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
48-DIP (0.600", 15.24mm)
48-SIDE BRAZED
IS43LR32320B-6BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-LFBGA
  • Supplier Device Package: 90-LFBGA (8x13)
パッケージ: 90-LFBGA
在庫3,008
DRAM
SDRAM - Mobile DDR
64Mb (2M x 32)
Parallel
166MHz
15ns
5.5ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
90-LFBGA
90-LFBGA (8x13)
7133SA55J8
IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 55NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 32Kb (2K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
パッケージ: 68-LCC (J-Lead)
在庫7,568
SRAM
SRAM - Dual Port, Asynchronous
32Kb (2K x 16)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
MT29RZ2B2DZZHHTB-18W.88F TR
Micron Technology Inc.

256MX8/64MX32 MCP PLASTIC WIRELE

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫3,152
-
-
-
-
-
-
-
-
-
-
-
-
MT41K128M16JT-107 IT:K TR
Micron Technology Inc.

IC SDRAM 2GBIT 933MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (8x14)
パッケージ: 96-TFBGA
在庫6,256
DRAM
SDRAM - DDR3L
2Gb (128M x 16)
Parallel
933MHz
-
20ns
1.283 V ~ 1.45 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
71V3559S85BG
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8.5NS 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
パッケージ: 119-BGA
在庫2,048
SRAM
SRAM - Synchronous ZBT
4.5Mb (256K x 18)
Parallel
-
-
8.5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
SST26VF032-80-5I-QAE
Microchip Technology

IC FLASH 32MBIT 80MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 80MHz
  • Write Cycle Time - Word, Page: 1.5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
パッケージ: 8-WDFN Exposed Pad
在庫6,848
FLASH
FLASH
32Mb (4M x 8)
SPI - Quad I/O
80MHz
1.5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
IS65LV256AL-45TLA3-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 256KBIT 45NS 28TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP I
パッケージ: 28-TSSOP (0.465", 11.80mm Width)
在庫7,696
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
45ns
45ns
3 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP I
DS28E22Q+T
Maxim Integrated

IC EEPROM 2KBIT 1WIRE 6TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (2K x 1)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: 2.97 V ~ 3.63 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN-EP (3x3)
パッケージ: 6-WDFN Exposed Pad
在庫5,920
EEPROM
EEPROM
2Kb (2K x 1)
1-Wire?
-
-
2µs
2.97 V ~ 3.63 V
-40°C ~ 85°C (TA)
Surface Mount
6-WDFN Exposed Pad
6-TDFN-EP (3x3)
hot 24LC32AT-E/MNY
Microchip Technology

IC EEPROM 32KBIT 400KHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
パッケージ: 8-WFDFN Exposed Pad
在庫21,156
EEPROM
EEPROM
32Kb (4K x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
MX29F200CTTI-70G
Macronix

IC FLASH 2MBIT 70NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
パッケージ: 48-TFSOP (0.724", 18.40mm Width)
在庫19,764
FLASH
FLASH - NOR
2Mb (256K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
CY7C25442KV18-300BZI
Cypress Semiconductor Corp

IC SRAM 72MBIT 300MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 300MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
パッケージ: 165-LBGA
在庫6,840
SRAM
SRAM - Synchronous, QDR II+
72Mb (2M x 36)
Parallel
300MHz
-
-
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
S25FL116K0XMFA010
Cypress Semiconductor Corp

IC FLASH 16M SPI 108MHZ 8SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.209", 5.30mm Width)
在庫4,928
FLASH
FLASH - NOR
16Mb (2M x 8)
SPI - Quad I/O
108MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
S29WS128N0SBAW012
Cypress Semiconductor Corp

IC MEMORY NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,224
-
-
-
-
-
-
-
-
-
-
-
-
MT41K1G8RKB-107:P TR
Micron Technology Inc.

IC SDRAM DDR3L 8GB 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (8x10.5)
パッケージ: 78-TFBGA
在庫6,816
DRAM
SDRAM - DDR3L
8Gb (1G x 8)
Parallel
933MHz
15ns
20ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x10.5)
MX25UW51245GXDQ00
Macronix

SERIAL NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (6x8)
パッケージ: 24-TBGA
在庫7,344
FLASH
FLASH - NOR
512Mb (64M x 8)
SPI - Quad I/O, QPI, DTR
200MHz
-
-
1.7V ~ 2V
-40°C ~ 125°C (TA)
Surface Mount
24-TBGA
24-BGA (6x8)
CY14B101NA-ZS45XIKA
Cypress Semiconductor Corp

IC NVSRAM 1MBIT PAR 44TSOP II

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
パッケージ: -
Request a Quote
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mbit
Parallel
-
45ns
45 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IS46TR16256B-107MBLA2-TR
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 4

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
パッケージ: -
Request a Quote
DRAM
SDRAM - DDR3
4Gbit
Parallel
933 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
W25Q81EWZPAG
Winbond Electronics

IC FLASH 8MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
パッケージ: -
Request a Quote
FLASH
FLASH - NOR
8Mbit
SPI - Quad I/O
104 MHz
-
-
1.65V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
S99GL512S10DHI010
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
70V24S12PFG
Renesas Electronics Corporation

70V24S12PFG

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MTFC256GBCAQTC-AAT-ES-TR
Micron Technology Inc.

EMMC 2T LFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IS66WVH8M8DALL-200B1LI-TR
ISSI, Integrated Silicon Solution Inc

64Mb, HyperRAM, 8Mbx8, 1.8V, 200

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 64Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 400ns
  • Access Time: 40 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
パッケージ: -
Request a Quote
PSRAM
PSRAM (Pseudo SRAM)
64Mbit
HyperBus
200 MHz
400ns
40 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)