ページ 493 - メモリ | 集積回路(IC) | Heisener Electronics
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部品番号
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説明
パッケージ
在庫
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS62WV25616DBLL-45BI
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 45NS 48VFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
パッケージ: 48-TFBGA
在庫7,760
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
45ns
45ns
2.3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
MT53B512M32D2GZ-062 WT:B TR
Micron Technology Inc.

IC SDRAM 16GBIT 1.6GHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 16Gb (512M x 32)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫7,040
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT25QL01GBBA8E12E01-2SIT TR
Micron Technology Inc.

IC FLASH 1GBIT 133MHZ 24TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
パッケージ: 24-TBGA
在庫5,472
FLASH
FLASH - NOR
1Gb (128M x 8)
SPI
133MHz
8ms, 2.8ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
S40410081B1B2I000
Cypress Semiconductor Corp

IC FLASH 8GBIT 200MHZ 100BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-LBGA (14x18)
パッケージ: 100-LBGA
在庫2,720
FLASH
FLASH - NAND
8Gb (1G x 8)
Parallel
200MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LBGA
100-LBGA (14x18)
N25Q128A13E1440E
Micron Technology Inc.

IC FLASH 128MBIT 108MHZ 24TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (32M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (6x8)
パッケージ: 24-TBGA
在庫5,184
FLASH
FLASH - NOR
128Mb (32M x 4)
SPI
108MHz
8ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-BGA (6x8)
MT29F16G08AJADAWP:D
Micron Technology Inc.

IC FLASH 16GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
パッケージ: 48-TFSOP (0.724", 18.40mm Width)
在庫4,208
FLASH
FLASH - NAND
16Gb (2G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
MT48H4M32LFB5-6:K
Micron Technology Inc.

IC SDRAM 128MBIT 167MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
パッケージ: 90-VFBGA
在庫6,080
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
166MHz
15ns
5ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
CAT28C16AGI-12T
ON Semiconductor

IC EEPROM 16KBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (11.43x13.97)
パッケージ: 32-LCC (J-Lead)
在庫4,192
EEPROM
EEPROM
16Kb (2K x 8)
Parallel
-
5ms
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC (11.43x13.97)
70V5388S100BC
IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 100MHZ 256BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Quad Port, Synchronous
  • Memory Size: 1.125Mb (64K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.6ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-CABGA (17x17)
パッケージ: 256-LBGA
在庫5,472
SRAM
SRAM - Quad Port, Synchronous
1.125Mb (64K x 18)
Parallel
100MHz
-
3.6ns
3.15 V ~ 3.45 V
0°C ~ 70°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
hot CY7C057V-15BBI
Cypress Semiconductor Corp

IC SRAM 1.152MBIT 15NS 172FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 1.152Mb (32K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 172-LFBGA
  • Supplier Device Package: 172-FBGA (15x15)
パッケージ: 172-LFBGA
在庫6,112
SRAM
SRAM - Dual Port, Asynchronous
1.152Mb (32K x 36)
Parallel
-
15ns
15ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
172-LFBGA
172-FBGA (15x15)
hot W39V040FAPZ
Winbond Electronics

IC FLASH 4MBIT 11NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 300ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (11.43x13.97)
パッケージ: 32-LCC (J-Lead)
在庫19,944
FLASH
FLASH
4Mb (512K x 8)
Parallel
-
-
300ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC (11.43x13.97)
CY7C1472BV33-200BZXC
Cypress Semiconductor Corp

IC SRAM 72MBIT 200MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 72Mb (4M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
パッケージ: 165-LBGA
在庫3,824
SRAM
SRAM - Synchronous
72Mb (4M x 18)
Parallel
200MHz
-
3ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
AT28C256F-15FM/883
Microchip Technology

IC EEPROM 256KBIT 150NS 28FLATPK

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-CFlatPack
  • Supplier Device Package: 28-Flatpack, Ceramic Bottom-Brazed
パッケージ: 28-CFlatPack
在庫2,480
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
3ms
150ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TC)
Surface Mount
28-CFlatPack
28-Flatpack, Ceramic Bottom-Brazed
MT29F32G08ABCABH1-10ITZ:A
Micron Technology Inc.

IC FLASH 32GBIT 100MHZ 100VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-VFBGA
  • Supplier Device Package: 100-VBGA (12x18)
パッケージ: 100-VFBGA
在庫5,216
FLASH
FLASH - NAND
32Gb (4G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-VFBGA
100-VBGA (12x18)
MT46V64M8CY-5B:J
Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.5 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (8x12.5)
パッケージ: 60-TFBGA
在庫4,320
DRAM
SDRAM - DDR
512Mb (64M x 8)
Parallel
200MHz
15ns
700ps
2.5 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-FBGA (8x12.5)
hot M29W256GH70N3E
Micron Technology Inc.

IC FLASH 256MBIT 70NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8, 16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
パッケージ: 56-TFSOP (0.724", 18.40mm Width)
在庫22,680
FLASH
FLASH - NOR
256Mb (32M x 8, 16M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
AS7C3513B-20TCN
Alliance Memory, Inc.

IC SRAM 512KBIT 20NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 512Kb (32K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
パッケージ: 44-TSOP (0.400", 10.16mm Width)
在庫2,976
SRAM
SRAM - Asynchronous
512Kb (32K x 16)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
W25Q128JVCIM TR
Winbond Electronics

IC FLASH 128MBIT 133MHZ 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
パッケージ: 24-TBGA
在庫7,296
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI - Quad I/O, QPI, DTR
133MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
CY62147EV30LL-45B2XI
Cypress Semiconductor Corp

IC SRAM 4MBIT 45NS 48VFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
パッケージ: 48-VFBGA
在庫6,944
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
45ns
45ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
IS46R16320E-6TLA2-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 166MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP
パッケージ: 66-TSSOP (0.400", 10.16mm Width)
在庫7,088
DRAM
SDRAM - DDR
512Mb (32M x 16)
Parallel
166MHz
15ns
700ps
2.3 V ~ 2.7 V
-40°C ~ 105°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP
S29PL032J60BFI123A
Cypress Semiconductor Corp

IC FLASH MEM NOR 48FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 60ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-FBGA (8.15x6.15)
パッケージ: 48-VFBGA
在庫7,360
FLASH
FLASH - NOR
32Mb (2M x 16)
Parallel
-
60ns
60ns
2.7 V ~ 3.6 V
-40°C ~ 85°C
Surface Mount
48-VFBGA
48-FBGA (8.15x6.15)
CG8316AAT
Cypress Semiconductor Corp

IC SRAM MICROPOWER 44TSOP II

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,256
-
-
-
-
-
-
-
-
-
-
-
-
IS46LD32128C-25BPLA2-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 4Gbit
  • Memory Interface: HSUL_12
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5 ns
  • Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-VFBGA
  • Supplier Device Package: 168-VFBGA (12x12)
パッケージ: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR2
4Gbit
HSUL_12
400 MHz
15ns
5.5 ns
1.14V ~ 1.3V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
168-VFBGA
168-VFBGA (12x12)
GD25Q32ETJGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 32MBIT SPI/QUAD 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 140µs, 4ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
パッケージ: -
Request a Quote
FLASH
FLASH - NOR (SLC)
32Mbit
SPI - Quad I/O
133 MHz
140µs, 4ms
7 ns
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
24FC04HT-I-Q4B
Microchip Technology

4KB I2C EEPROM, 1MHZ 1.7-5.5V, 8

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 450 ns
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
パッケージ: -
Request a Quote
EEPROM
EEPROM
4Kbit
I2C
1 MHz
5ms
450 ns
1.7V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)
MT62F1G64D4AS-026-XT-C
Micron Technology Inc.

LPDDR5 64GBIT 64 573/924 VFBGA 4

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
24CS256T-E-SM
Microchip Technology

IC EEPROM 256KBIT I2C 1MHZ 8SOIJ

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 400 ns
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIJ
パッケージ: -
Request a Quote
EEPROM
EEPROM
256Kbit
I2C
1 MHz
5ms
400 ns
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIJ
GE28F320B3BC90
Intel

IC FLASH 32MBIT PARALLEL 48VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 70 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-BGA
  • Supplier Device Package: 48-VFBGA
パッケージ: -
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FLASH
FLASH
32Mbit
Parallel
-
-
70 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-BGA
48-VFBGA