ページ 732 - メモリ | 集積回路（IC） | Heisener Electronics
連絡先
SalesDept@heisener.com +86-755-83210559 ext. 803
ログイン/登録
Language Translation

* Please refer to the English Version as our Official Version.

BOM
カート 0

メモリ

レコード 62,144
ページ  732/2,220
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CB021-80075
Cypress Semiconductor Corp

IC FLASH NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫7,920
-
-
-
-
-
-
-
-
-
-
-
-
MTFC4GMTEA-1F WT
Micron Technology Inc.

IC FLASH 32GBIT 153WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-WFBGA
  • Supplier Device Package: 153-WFBGA (11.5x13)
パッケージ: 153-WFBGA
在庫3,968
FLASH
FLASH - NAND
32Gb (4G x 8)
MMC
-
-
-
2.7 V ~ 3.6 V
-25°C ~ 85°C (TA)
Surface Mount
153-WFBGA
153-WFBGA (11.5x13)
MT29C1G12MAAJAFAMD-6 IT
Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 130-VFBGA
  • Supplier Device Package: 130-VFBGA (8x9)
パッケージ: 130-VFBGA
在庫7,088
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
Parallel
166MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
hot W972GG8JB-25
Winbond Electronics

IC SDRAM 2GBIT 400MHZ 60WBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-WBGA (11x11.5)
パッケージ: 60-TFBGA
在庫33,960
DRAM
SDRAM - DDR2
2Gb (256M x 8)
Parallel
200MHz
15ns
400ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
60-TFBGA
60-WBGA (11x11.5)
SST39LF040-55-4I-B3KE
Microchip Technology

IC FLASH 4MBIT 55NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 55ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA
パッケージ: 48-TFBGA
在庫6,320
FLASH
FLASH
4Mb (512K x 8)
Parallel
-
20µs
55ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA
IDT71V424YL10PHI8
IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
パッケージ: 44-TSOP (0.400", 10.16mm Width)
在庫4,320
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
AT45DB041D-MU-2.5
Microchip Technology

IC FLASH 4MBIT 50MHZ 8VDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (264 Bytes x 2048 pages)
  • Memory Interface: SPI
  • Clock Frequency: 50MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-VDFN (6x5)
パッケージ: 8-VDFN Exposed Pad
在庫5,472
FLASH
FLASH
4Mb (264 Bytes x 2048 pages)
SPI
50MHz
4ms
-
2.5 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-VDFN Exposed Pad
8-VDFN (6x5)
IS61NLP12836B-200B2LI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
パッケージ: 119-BGA
在庫2,704
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
MT48LC32M8A2TG-75:D TR
Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
パッケージ: 54-TSOP (0.400", 10.16mm Width)
在庫7,456
DRAM
SDRAM
256Mb (32M x 8)
Parallel
133MHz
15ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
AT25160N-10SI-1.8
Microchip Technology

IC EEPROM 16KBIT 3MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫7,264
EEPROM
EEPROM
16Kb (2K x 8)
SPI
3MHz
5ms
-
1.8 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
CY62167GE18-55BVXIT
Cypress Semiconductor Corp

IC SRAM 16MBIT 55NS 48BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (2M x 8, 1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 1.65 V ~ 2.2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
パッケージ: 48-VFBGA
在庫4,880
SRAM
SRAM - Asynchronous
16Mb (2M x 8, 1M x 16)
Parallel
-
55ns
55ns
1.65 V ~ 2.2 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
IS25WP032D-JKLE-TR
ISSI, Integrated Silicon Solution Inc

32MB QPI/QSPI WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 800µs
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
パッケージ: 8-WDFN Exposed Pad
在庫6,128
FLASH
FLASH - NOR
32Mb (4M x 8)
SPI - Quad I/O, QPI, DTR
133MHz
800µs
-
1.65 V ~ 1.95 V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
25LC640A-E/P
Microchip Technology

IC EEPROM 64KBIT 10MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫4,992
EEPROM
EEPROM
64Kb (8K x 8)
SPI
10MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
CAT25128VP2I-GT3
ON Semiconductor

IC EEPROM 128KBIT 10MHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
パッケージ: 8-WFDFN Exposed Pad
在庫4,256
EEPROM
EEPROM
128Kb (16K x 8)
SPI
10MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
hot CY7C1372DV25-167AXC
Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.4ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
パッケージ: 100-LQFP
在庫8,964
SRAM
SRAM - Synchronous
18Mb (1M x 18)
Parallel
167MHz
-
3.4ns
2.375 V ~ 2.625 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
M24C02-FMC6TG
STMicroelectronics

IC EEPROM 2KBIT 400KHZ 8UFDFPN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UFDFPN (2x3)
パッケージ: 8-UFDFN Exposed Pad
在庫6,384
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UFDFPN (2x3)
71V416S12PHGI8
IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 12NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
パッケージ: 44-TSOP (0.400", 10.16mm Width)
在庫3,472
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
hot MT48LC64M8A2TG-75:C
Alliance Memory, Inc.

IC SDRAM 512MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP
パッケージ: 54-TSOP (0.400", 10.16mm Width)
在庫6,240
DRAM
SDRAM
512Mb (64M x 8)
Parallel
133MHz
15ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP
IS43DR16160B-3DBI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 84TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-TWBGA (8x12.5)
パッケージ: 84-TFBGA
在庫6,288
DRAM
SDRAM - DDR2
256Mb (16M x 16)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
-40°C ~ 85°C (TC)
Surface Mount
84-TFBGA
84-TWBGA (8x12.5)
EM-10 16GB I-GRADE
Swissbit

IND EMBEDDED MMC EM-10 16 GB MLC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (MLC)
  • Memory Size: 16GB
  • Memory Interface: eMMC
  • Clock Frequency: 52MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-BGA (11.5x13)
パッケージ: 153-VFBGA
在庫2,896
FLASH
FLASH - NAND (MLC)
16GB
eMMC
52MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C
Surface Mount
153-VFBGA
153-BGA (11.5x13)
S26HL01GTFPBHB020
Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: HyperBus
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 6.5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (8x8)
パッケージ: -
在庫3,900
FLASH
FLASH - NOR (SLC)
1Gbit
HyperBus
166 MHz
1.7ms
6.5 ns
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
24-VBGA
24-FBGA (8x8)
E28F002BC-T80
Intel

IC FLASH 2MBIT CUI 40TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - Boot Block
  • Memory Size: 2Mbit
  • Memory Interface: CUI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 80ns
  • Access Time: 80 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 40-TSOP
パッケージ: -
Request a Quote
FLASH
FLASH - Boot Block
2Mbit
CUI
-
80ns
80 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
40-TFSOP (0.724", 18.40mm Width)
40-TSOP
W25Q128FWBIQ
Winbond Electronics

IC FLASH 128MBIT SPI 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 60µs, 5ms
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
パッケージ: -
Request a Quote
FLASH
FLASH - NOR
128Mbit
SPI - Quad I/O, QPI
104 MHz
60µs, 5ms
-
1.65V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IS66WVH8M8DALL-200B1LI
ISSI, Integrated Silicon Solution Inc

64Mb, HyperRAM, 8Mbx8, 1.8V, 200

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 64Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
パッケージ: -
Request a Quote
PSRAM
PSRAM (Pseudo SRAM)
64Mbit
HyperBus
200 MHz
35ns
35 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
W97BH2MBVA1I
Winbond Electronics

IC DRAM 2GBIT HSUL 12 134VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2-S4B
  • Memory Size: 2Gbit
  • Memory Interface: HSUL_12
  • Clock Frequency: 533 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: -
  • Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-VFBGA
  • Supplier Device Package: 134-VFBGA (10x11.5)
パッケージ: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR2-S4B
2Gbit
HSUL_12
533 MHz
15ns
-
1.14V ~ 1.3V, 1.7V ~ 1.95V
-40°C ~ 85°C (TC)
Surface Mount
134-VFBGA
134-VFBGA (10x11.5)
W25Q16JWUUIQ-TR
Winbond Electronics

IC FLASH 16MBIT SPI/QUAD 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-USON (4x3)
パッケージ: -
Request a Quote
FLASH
FLASH - NOR
16Mbit
SPI - Quad I/O
133 MHz
3ms
-
1.65V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-USON (4x3)
NLQ26PFS-6NIT-TR
Insignis Technology Corporation

LPDDR4 2GB X16 3200MHZ CL22 10X1

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 2Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-FBGA (10x14.5)
パッケージ: -
在庫6,000
DRAM
SDRAM - Mobile LPDDR4
2Gbit
LVSTL
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-FBGA (10x14.5)
SM662GXA-BDST
Silicon Motion, Inc.

IC FLASH 128GBIT EMMC 100BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 128Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-BGA (14x18)
パッケージ: -
Request a Quote
FLASH
FLASH - NAND (TLC)
128Gbit
eMMC
-
-
-
-
-25°C ~ 85°C
Surface Mount
100-LBGA
100-BGA (14x18)