ページ 735 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS29GL512S-11DHV01	Cypress Semiconductor Corp	IC MEM FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,168	-	-	-	-	-	-	-	-	-	-	-	-
IS42S86400B-7TLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	パッケージ: 54-TSOP (0.400", 10.16mm Width)	在庫32,892	DRAM	SDRAM	512Mb (64M x 8)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
MT47H32M16HW-25E:G	Micron Technology Inc.	IC SDRAM 512MBIT 400MHZ 84FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (8x12.5)	パッケージ: 84-TFBGA	在庫13,068	DRAM	SDRAM - DDR2	512Mb (32M x 16)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-FBGA (8x12.5)
AT27C4096-55PU	Microchip Technology	IC OTP 4MBIT 55NS 40DIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 40-DIP (0.600", 15.24mm) Supplier Device Package: 40-PDIP	パッケージ: 40-DIP (0.600", 15.24mm)	在庫5,952	EPROM	EPROM - OTP	4Mb (256K x 16)	Parallel	-	-	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	40-DIP (0.600", 15.24mm)	40-PDIP
MT49H32M9FM-33 TR	Micron Technology Inc.	IC RLDRAM 288MBIT 300MHZ 144UBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 288Mb (32M x 9) Memory Interface: Parallel Clock Frequency: 300MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-µBGA (18.5x11)	パッケージ: 144-TFBGA	在庫2,400	DRAM	DRAM	288Mb (32M x 9)	Parallel	300MHz	-	20ns	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	Surface Mount	144-TFBGA	144-µBGA (18.5x11)
M28W640FCT70N6E	Micron Technology Inc.	IC FLASH 64MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫7,904	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
AT28HC64B-12JA	Microchip Technology	IC EEPROM 64KBIT 120NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	パッケージ: 32-LCC (J-Lead)	在庫3,584	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	10ms	120ns	4.5 V ~ 5.5 V	-40°C ~ 125°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT49LV002-90VC	Microchip Technology	IC FLASH 2MBIT 90NS 32VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 90ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-VSOP	パッケージ: 32-TFSOP (0.488", 12.40mm Width)	在庫7,632	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	90ns	3 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-VSOP
70T653MS15BC	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 15NS 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	パッケージ: 256-LBGA	在庫7,392	SRAM	SRAM - Dual Port, Asynchronous	18Mb (512K x 36)	Parallel	-	15ns	15ns	2.4 V ~ 2.6 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
MT29F256G08AUCABH3-10ITZ:A TR	Micron Technology Inc.	IC FLASH 256GBIT 100MHZ 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,928	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	100MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
70V3319S166PRF	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 166MHZ 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.6ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	パッケージ: 128-LQFP	在庫7,808	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (256K x 18)	Parallel	166MHz	-	3.6ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
CY7C1480V33-200AXC	Cypress Semiconductor Corp	IC SRAM 72MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	パッケージ: 100-LQFP	在庫4,304	SRAM	SRAM - Synchronous	72Mb (2M x 36)	Parallel	200MHz	-	3ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
IS61NLP204836B-166TQLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 72MBIT 166MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	パッケージ: 100-LQFP	在庫2,720	SRAM	SRAM - Synchronous	72Mb (2M x 36)	Parallel	166MHz	-	3.8ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
MX29GL512FHXFI-11G	Macronix	IC FLASH 512MBIT 110NS 64LFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA, CSPBGA Supplier Device Package: 64-LFBGA, CSP (11x13)	パッケージ: 64-LBGA, CSPBGA	在庫7,408	FLASH	FLASH - NOR	512Mb (64M x 8)	Parallel	-	110ns	110ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA, CSPBGA	64-LFBGA, CSP (11x13)
M29F400FT5AN6E2	Micron Technology Inc.	IC FLASH 4MBIT 55NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8, 256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-SOIC (0.496", 12.60mm Width) Supplier Device Package: 44-SO	パッケージ: 44-SOIC (0.496", 12.60mm Width)	在庫3,792	FLASH	FLASH - NOR	4Mb (512K x 8, 256K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	44-SOIC (0.496", 12.60mm Width)	44-SO
S25FL064LABBHN023	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,504	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	108MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	-	-	-
11LC160-E/P	Microchip Technology	IC EEPROM 16KBIT 100KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Single Wire Clock Frequency: 100kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫2,128	EEPROM	EEPROM	16Kb (2K x 8)	Single Wire	100kHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IS45S16100H-7TLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 143MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 50-TSOP (0.400", 10.16mm Width) Supplier Device Package: 50-TSOP II	パッケージ: 50-TSOP (0.400", 10.16mm Width)	在庫7,392	DRAM	SDRAM	16Mb (1M x 16)	Parallel	143MHz	-	5.5ns	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
MT53D512M64D4BP-046 WT:E	Micron Technology Inc.	IC DRAM 32G 1866MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,344	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
ASFC128G32T5-51BINTR	Alliance Memory, Inc.	128GB, EMMC 5.1, 3V, TLC GEN5 NA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 1Tbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-FBGA (11.5x13)	パッケージ: -	Request a Quote	FLASH	FLASH - NAND (TLC)	1Tbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-TFBGA	153-FBGA (11.5x13)
FT24C512A-ETR-T	Fremont Micro Devices Ltd	IC EEPROM 512KBIT I2C 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: 900 ns Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: -	Request a Quote	EEPROM	EEPROM	512Kbit	I2C	1 MHz	5ms	900 ns	1.8V ~ 5.5V	-40°C ~ 85°C	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
GS88036CGT-333I	GSI Technology Inc.	IC SRAM 9MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, Standard Memory Size: 9Mbit Memory Interface: Parallel Clock Frequency: 333 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (20x14)	パッケージ: -	Request a Quote	SRAM	SRAM - Synchronous, Standard	9Mbit	Parallel	333 MHz	-	-	2.3V ~ 2.7V, 3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (20x14)
NDS76PBA-20ET	Insignis Technology Corporation	SDR 128MB X16 BGA 8X8(X1.2) PC20 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Interface: LVTTL Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 10ns Access Time: 4.5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-FBGA (8x8)	パッケージ: -	Request a Quote	DRAM	SDRAM	128Mbit	LVTTL	200 MHz	10ns	4.5 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	54-TFBGA	54-FBGA (8x8)
GS81314LT36GK-133I	GSI Technology Inc.	IC SRAM 144MBIT PAR 260BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous Memory Size: 144Mbit Memory Interface: Parallel Clock Frequency: 1.333 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V ~ 1.35V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 260-BGA Supplier Device Package: 260-BGA (22x14)	パッケージ: -	Request a Quote	SRAM	SRAM - Quad Port, Synchronous	144Mbit	Parallel	1.333 GHz	-	-	1.2V ~ 1.35V	-40°C ~ 100°C (TJ)	Surface Mount	260-BGA	260-BGA (22x14)
NV25040MUW3VTBG	onsemi	IC EEPROM 4KBIT SPI 10MHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: SPI Clock Frequency: 10 MHz Write Cycle Time - Word, Page: 5ms Access Time: 35 ns Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	パッケージ: -	Request a Quote	EEPROM	EEPROM	4Kbit	SPI	10 MHz	5ms	35 ns	1.8V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
S80KS2562GABHI020	Infineon Technologies	IC PSRAM 256MBIT HYPERBUS 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 256Mbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	パッケージ: -	在庫1,290	PSRAM	PSRAM (Pseudo SRAM)	256Mbit	HyperBus	200 MHz	35ns	35 ns	1.7V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
W631GG8NB11I	Winbond Electronics	IC DRAM 1GBIT SSTL 15 78VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: SSTL_15 Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-VFBGA (8x10.5)	パッケージ: -	在庫726	DRAM	SDRAM - DDR3	1Gbit	SSTL_15	933 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	78-VFBGA	78-VFBGA (8x10.5)
GD25LD20CUIGR	GigaDevice Semiconductor (HK) Limited	IC FLSH 2MBIT SPI/DUAL I/O 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mbit Memory Interface: SPI - Dual I/O Clock Frequency: 50 MHz Write Cycle Time - Word, Page: 97µs, 6ms Access Time: - Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-XFDFN Exposed Pad Supplier Device Package: 8-USON (2x3)	パッケージ: -	Request a Quote	FLASH	FLASH - NOR	2Mbit	SPI - Dual I/O	50 MHz	97µs, 6ms	-	1.65V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	8-XFDFN Exposed Pad	8-USON (2x3)

IS29GL512S-11DHV01

Cypress Semiconductor Corp

IC MEM FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,168

-

IS42S86400B-7TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

パッケージ: 54-TSOP (0.400", 10.16mm Width)

在庫32,892

DRAM

SDRAM

512Mb (64M x 8)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

MT47H32M16HW-25E:G

Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ 84FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (8x12.5)

パッケージ: 84-TFBGA

在庫13,068

DRAM

SDRAM - DDR2

512Mb (32M x 16)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-FBGA (8x12.5)

AT27C4096-55PU

Microchip Technology

IC OTP 4MBIT 55NS 40DIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 40-DIP (0.600", 15.24mm)
Supplier Device Package: 40-PDIP

パッケージ: 40-DIP (0.600", 15.24mm)

在庫5,952

EPROM

EPROM - OTP

4Mb (256K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

40-DIP (0.600", 15.24mm)

40-PDIP

MT49H32M9FM-33 TR

Micron Technology Inc.

IC RLDRAM 288MBIT 300MHZ 144UBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (32M x 9)
Memory Interface: Parallel
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-µBGA (18.5x11)

パッケージ: 144-TFBGA

在庫2,400

DRAM

288Mb (32M x 9)

Parallel

300MHz

-

20ns

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

Surface Mount

144-TFBGA

144-µBGA (18.5x11)

M28W640FCT70N6E

Micron Technology Inc.

IC FLASH 64MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫7,904

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

AT28HC64B-12JA

Microchip Technology

IC EEPROM 64KBIT 120NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

パッケージ: 32-LCC (J-Lead)

在庫3,584

EEPROM

64Kb (8K x 8)

Parallel

-

10ms

120ns

4.5 V ~ 5.5 V

-40°C ~ 125°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT49LV002-90VC

Microchip Technology

IC FLASH 2MBIT 90NS 32VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP

パッケージ: 32-TFSOP (0.488", 12.40mm Width)

在庫7,632

FLASH

2Mb (256K x 8)

Parallel

-

50µs

90ns

3 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-VSOP

70T653MS15BC

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 15NS 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

パッケージ: 256-LBGA

在庫7,392

SRAM

SRAM - Dual Port, Asynchronous

18Mb (512K x 36)

Parallel

-

15ns

2.4 V ~ 2.6 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

MT29F256G08AUCABH3-10ITZ:A TR

Micron Technology Inc.

IC FLASH 256GBIT 100MHZ 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,928

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

100MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

70V3319S166PRF

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.6ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

パッケージ: 128-LQFP

在庫7,808

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (256K x 18)

Parallel

166MHz

-

3.6ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

CY7C1480V33-200AXC

Cypress Semiconductor Corp

IC SRAM 72MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

パッケージ: 100-LQFP

在庫4,304

SRAM

SRAM - Synchronous

72Mb (2M x 36)

Parallel

200MHz

-

3ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

IS61NLP204836B-166TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 72MBIT 166MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

パッケージ: 100-LQFP

在庫2,720

SRAM

SRAM - Synchronous

72Mb (2M x 36)

Parallel

166MHz

-

3.8ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

MX29GL512FHXFI-11G

Macronix

IC FLASH 512MBIT 110NS 64LFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA, CSPBGA
Supplier Device Package: 64-LFBGA, CSP (11x13)

パッケージ: 64-LBGA, CSPBGA

在庫7,408

FLASH

FLASH - NOR

512Mb (64M x 8)

Parallel

-

110ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA, CSPBGA

64-LFBGA, CSP (11x13)

M29F400FT5AN6E2

Micron Technology Inc.

IC FLASH 4MBIT 55NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Supplier Device Package: 44-SO

パッケージ: 44-SOIC (0.496", 12.60mm Width)

在庫3,792

FLASH

FLASH - NOR

4Mb (512K x 8, 256K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

44-SOIC (0.496", 12.60mm Width)

44-SO

S25FL064LABBHN023

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,504

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

108MHz

-

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

-

11LC160-E/P

Microchip Technology

IC EEPROM 16KBIT 100KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Single Wire
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫2,128

EEPROM

16Kb (2K x 8)

Single Wire

100kHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IS45S16100H-7TLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 143MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 50-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 50-TSOP II

パッケージ: 50-TSOP (0.400", 10.16mm Width)

在庫7,392

DRAM

SDRAM

16Mb (1M x 16)

Parallel

143MHz

-

5.5ns

3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

50-TSOP (0.400", 10.16mm Width)

50-TSOP II

MT53D512M64D4BP-046 WT:E

Micron Technology Inc.

IC DRAM 32G 1866MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,344

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

ASFC128G32T5-51BINTR

Alliance Memory, Inc.

128GB, EMMC 5.1, 3V, TLC GEN5 NA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 1Tbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-FBGA (11.5x13)

パッケージ: -

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FLASH

FLASH - NAND (TLC)

1Tbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-TFBGA

153-FBGA (11.5x13)

FT24C512A-ETR-T

Fremont Micro Devices Ltd

IC EEPROM 512KBIT I2C 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900 ns
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: -

Request a Quote

EEPROM

512Kbit

I2C

1 MHz

5ms

900 ns

1.8V ~ 5.5V

-40°C ~ 85°C

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

GS88036CGT-333I

GSI Technology Inc.

IC SRAM 9MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, Standard
Memory Size: 9Mbit
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (20x14)

パッケージ: -

Request a Quote

SRAM

SRAM - Synchronous, Standard

9Mbit

Parallel

333 MHz

-

2.3V ~ 2.7V, 3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (20x14)

NDS76PBA-20ET

Insignis Technology Corporation

SDR 128MB X16 BGA 8X8(X1.2) PC20

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Interface: LVTTL
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 10ns
Access Time: 4.5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-FBGA (8x8)

パッケージ: -

Request a Quote

DRAM

SDRAM

128Mbit

LVTTL

200 MHz

10ns

4.5 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

54-TFBGA

54-FBGA (8x8)

GS81314LT36GK-133I

GSI Technology Inc.

IC SRAM 144MBIT PAR 260BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous
Memory Size: 144Mbit
Memory Interface: Parallel
Clock Frequency: 1.333 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V ~ 1.35V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 260-BGA
Supplier Device Package: 260-BGA (22x14)

パッケージ: -

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SRAM

SRAM - Quad Port, Synchronous

144Mbit

Parallel

1.333 GHz

-

1.2V ~ 1.35V

-40°C ~ 100°C (TJ)

Surface Mount

260-BGA

260-BGA (22x14)

NV25040MUW3VTBG

onsemi

IC EEPROM 4KBIT SPI 10MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: SPI
Clock Frequency: 10 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 35 ns
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

パッケージ: -

Request a Quote

EEPROM

4Kbit

SPI

10 MHz

5ms

35 ns

1.8V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

S80KS2562GABHI020

Infineon Technologies

IC PSRAM 256MBIT HYPERBUS 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 256Mbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

在庫1,290

PSRAM

PSRAM (Pseudo SRAM)

256Mbit

HyperBus

200 MHz

35ns

35 ns

1.7V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

W631GG8NB11I

Winbond Electronics

IC DRAM 1GBIT SSTL 15 78VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: SSTL_15
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-VFBGA (8x10.5)

パッケージ: -

在庫726

DRAM

SDRAM - DDR3

1Gbit

SSTL_15

933 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

78-VFBGA

78-VFBGA (8x10.5)

GD25LD20CUIGR

GigaDevice Semiconductor (HK) Limited

IC FLSH 2MBIT SPI/DUAL I/O 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mbit
Memory Interface: SPI - Dual I/O
Clock Frequency: 50 MHz
Write Cycle Time - Word, Page: 97µs, 6ms
Access Time: -
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-XFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)

パッケージ: -

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FLASH

FLASH - NOR

2Mbit

SPI - Dual I/O

50 MHz

97µs, 6ms

-

1.65V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

8-XFDFN Exposed Pad

8-USON (2x3)