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部品番号
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説明
パッケージ
在庫
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CG8263AAT
Cypress Semiconductor Corp

IC SRAM SYNC 100TQFP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,736
-
-
-
-
-
-
-
-
-
-
-
-
W25Q32DWSSIG TR
Winbond Electronics

IC FLASH 32MBIT 104MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.209", 5.30mm Width)
在庫5,616
FLASH
FLASH - NOR
32Mb (4M x 8)
SPI
104MHz
3ms
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
MT29C4G96MAZBACJG-5 IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 8GBIT 168VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 4Gb (256M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 168-VFBGA
  • Supplier Device Package: 168-VFBGA (12x12)
パッケージ: 168-VFBGA
在庫4,528
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
4Gb (256M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
168-VFBGA
168-VFBGA (12x12)
IS25CD512-JDLE-TR
ISSI, Integrated Silicon Solution Inc

IC FLASH 512KBIT 100MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
パッケージ: 8-TSSOP (0.173", 4.40mm Width)
在庫6,928
FLASH
FLASH
512Kb (64K x 8)
SPI
100MHz
5ms
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
JS28F00AP33BF0
Micron Technology Inc.

IC FLASH 1GBIT 105NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 105ns
  • Access Time: 105ns
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP (14x20)
パッケージ: 56-TFSOP (0.724", 18.40mm Width)
在庫7,120
FLASH
FLASH - NOR
1Gb (64M x 16)
Parallel
40MHz
105ns
105ns
2.3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP (14x20)
IDT71V424YS10PH8
IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
パッケージ: 44-TSOP (0.400", 10.16mm Width)
在庫2,528
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IDT709389L9PFI
IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 9NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 1.125Mb (64K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 9ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
パッケージ: 100-LQFP
在庫4,384
SRAM
SRAM - Dual Port, Synchronous
1.125Mb (64K x 18)
Parallel
-
-
9ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IS42S32400B-7BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 90FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
パッケージ: 90-TFBGA
在庫5,392
DRAM
SDRAM
128Mb (4M x 32)
Parallel
143MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
CY7C1021CV26-15ZXE
Cypress Semiconductor Corp

IC SRAM 1MBIT 15NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 2.5 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
パッケージ: 44-TSOP (0.400", 10.16mm Width)
在庫2,560
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
15ns
15ns
2.5 V ~ 2.7 V
-40°C ~ 125°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
MT48LC8M8A2P-7E L:G TR
Micron Technology Inc.

IC SDRAM 64MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
パッケージ: 54-TSOP (0.400", 10.16mm Width)
在庫4,528
DRAM
SDRAM
64Mb (8M x 8)
Parallel
133MHz
14ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
hot MT46V32M16BN-5B:F
Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.5 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (10x12.5)
パッケージ: 60-TFBGA
在庫5,856
DRAM
SDRAM - DDR
512Mb (32M x 16)
Parallel
200MHz
15ns
700ps
2.5 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-FBGA (10x12.5)
AT28C010-12TC
Microchip Technology

IC EEPROM 1MBIT 120NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
パッケージ: 32-TFSOP (0.724", 18.40mm Width)
在庫6,064
EEPROM
EEPROM
1Mb (128K x 8)
Parallel
-
10ms
120ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
70V261L25PF
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (16K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
パッケージ: 100-LQFP
在庫3,840
SRAM
SRAM - Dual Port, Asynchronous
256Kb (16K x 16)
Parallel
-
25ns
25ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
71V65703S80BQI
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8NS 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
パッケージ: 165-TBGA
在庫5,568
SRAM
SRAM - Synchronous ZBT
9Mb (256K x 36)
Parallel
-
-
8ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
MT29F256G08EFCDBWP-10M:D TR
Micron Technology Inc.

IC FLASH 256GBIT 100MHZ 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫5,520
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
71V67602S166PFG8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 166MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
パッケージ: 100-LQFP
在庫6,016
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
166MHz
-
3.5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MT48LC16M16A2B4-7E IT:G TR
Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (8x8)
パッケージ: 54-VFBGA
在庫3,840
DRAM
SDRAM
256Mb (16M x 16)
Parallel
133MHz
14ns
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
hot MT48LC4M16A2P-6A IT:J
Micron Technology Inc.

IC SDRAM 64MBIT 167MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
パッケージ: 54-TSOP (0.400", 10.16mm Width)
在庫4,960
DRAM
SDRAM
64Mb (4M x 16)
Parallel
167MHz
12ns
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
25LC320A-E/MS
Microchip Technology

IC EEPROM 32KBIT 10MHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
在庫5,168
EEPROM
EEPROM
32Kb (4K x 8)
SPI
10MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
11LC080-I/MS
Microchip Technology

IC EEPROM 8KBIT 100KHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Single Wire
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
在庫3,728
EEPROM
EEPROM
8Kb (1K x 8)
Single Wire
100kHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
hot CY7C1354C-166AXI
Cypress Semiconductor Corp

IC SRAM 9MBIT 166MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
パッケージ: 100-LQFP
在庫14,328
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
166MHz
-
3.5ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
25LC640A-M/SN
Microchip Technology

IC EEPROM 64KBIT 10MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫10,596
EEPROM
EEPROM
64Kb (8K x 8)
SPI
10MHz
5ms
-
2.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
W25Q16DVWA
Winbond Electronics

IC FLASH 16MBIT SPI/QUAD 104MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 50µs, 3ms
  • Access Time: 6 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
FLASH
FLASH - NOR
16Mbit
SPI - Quad I/O
104 MHz
50µs, 3ms
6 ns
2.7V ~ 3.6V
-
-
-
-
GD25T512MEBIRY
GigaDevice Semiconductor (HK) Limited

IC FLSH 512MBIT SPI/QUAD 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O, DTR
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
パッケージ: -
Request a Quote
FLASH
FLASH - NOR (SLC)
512Mbit
SPI - Quad I/O, DTR
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
7024S12PF8
Renesas Electronics Corporation

IC RAM

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
パッケージ: -
Request a Quote
SRAM
SRAM - Dual Port, Asynchronous
64Kbit
Parallel
-
12ns
12 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MEM-CF-256U512MB-C
ProLabs

Cisco MEM-CF-256U512MB Compatibl

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
S26HL512TFPBHI003
Infineon Technologies

IC FLASH 512MBIT HYPERBUS 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 6.5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
パッケージ: -
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FLASH
FLASH - NOR (SLC)
512Mbit
HyperBus
166 MHz
1.7ms
6.5 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
24-VBGA
24-FBGA (6x8)
24CS256T-I-CS0668
Microchip Technology

256K 3.4MHZ I2C SERIAL EEPROM, E

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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SM671PAD-AFSS
Silicon Motion, Inc.

IC FLASH 320GBIT UFS3.1 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 320Gbit
  • Memory Interface: UFS3.1
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-BGA (11.5x13)
パッケージ: -
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FLASH
FLASH - NAND (SLC)
320Gbit
UFS3.1
-
-
-
-
-40°C ~ 85°C
Surface Mount
153-TFBGA
153-BGA (11.5x13)
W25Q80DVWS
Winbond Electronics

IC FLASH 8MBIT SPI/QUAD 104MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 30µs, 3ms
  • Access Time: 6 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
FLASH
FLASH - NOR
8Mbit
SPI - Quad I/O
104 MHz
30µs, 3ms
6 ns
2.7V ~ 3.6V
-40°C ~ 125°C (TA)
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